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Amplification circuit and memory

ActiveCN117116321Breduce power consumptionlow working voltageBit lineControl signal
The embodiment of the present disclosure relates to the field of semiconductor circuit design, in particular to an amplification circuit and a memory, comprising: a pull-up module, an input end of which is coupled with a first node, one output end of which is coupled with a bit line, and another output end of which is coupled with a complementary bit line; a pull-up control module, an input end of which is used for receiving a first control signal, and an output end of which is coupled with the pull-up module, and the pull-up control module is configured to drive the potential of the bit line or the complementary bit line of the pull-up module based on the first control signal; a pull-down module, an input end of which is coupled with a second node, one output end of which is coupled with the bit line, and another output end of which is coupled with the complementary bit line; and a pull-down control module, an input end of which is used for receiving a second control signal, and an output end of which is coupled with the pull-down module, and the pull-down control module is configured to drive the potential of the bit line or the complementary bit line of the pull-down module based on the second control signal; the embodiment of the present disclosure improves the efficiency of the sensing amplification circuit in amplifying the voltage difference between the bit line and the complementary bit line through a new sensing amplification circuit structure.
Owner:CHANGXIN MEMORY TECH INC