The embodiment of the present disclosure relates to the field of
semiconductor circuit design, in particular to an amplification circuit and a memory, comprising: a pull-up module, an input end of which is coupled with a first node, one output end of which is coupled with a
bit line, and another output end of which is coupled with a complementary
bit line; a pull-up control module, an input end of which is used for receiving a first
control signal, and an output end of which is coupled with the pull-up module, and the pull-up control module is configured to drive the potential of the
bit line or the complementary bit line of the pull-up module based on the first
control signal; a pull-down module, an input end of which is coupled with a second node, one output end of which is coupled with the bit line, and another output end of which is coupled with the complementary bit line; and a pull-down control module, an input end of which is used for receiving a second
control signal, and an output end of which is coupled with the pull-down module, and the pull-down control module is configured to drive the potential of the bit line or the complementary bit line of the pull-down module based on the second control
signal; the embodiment of the present disclosure improves the efficiency of the sensing amplification circuit in amplifying the
voltage difference between the bit line and the complementary bit line through a new sensing amplification circuit structure.