Core shell structure nanowire tunneling field effect device

Abstract

The invention relates to a core shell structure nanowire tunneling field effect device which comprises a gate electrode (6), a source region (1), a drain region (4), a central region and a gate dielectric layer (5), wherein the central region is in a coaxially symmetrical core shell structure; the core in the core shell structure is made of an insulator material; the shell in the core shell structure is made of a semiconductor material; the gate dielectric layer is completely sleeved into the central region and is used for electrically isolating the central region and the gate electrode; the gate electrode is completely sleeved into the dielectric layer; the grate electrode (6), the gate dielectric layer (5) and the central region are equal in length; and the source region and the drain region are respectively arranged at two sides of the central region. A field effect transistor has low leakage current, high grid-control capability and low subthreshold slope, and the drain induced barrier lowing and the short-channel effect are effectively suppressed, so that various nonideal effects of a ring gate nanowire tunneling field effect device in the size reducing process are reduced, and the comprehensive performance of the device is improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a core-shell structure nanowire tunneling field effect device. Background technique [0002] In the process of continuously reducing the size of traditional field effect devices according to Moore's law, they encounter bottlenecks such as short channel effects and increased gate currents, which limit their further development. Many new device concepts and structures have been proposed, such as tunneling field-effect transistors, silicon-on-insulator devices, double-gate devices, triple-gate devices, and gate-around nanowire devices. Among them, the tunneling field effect transistor can provide excellent subthreshold characteristics and extremely low off-state current due to its unique working mechanism; the gate-around nanowire device can provide high switching current ratio due to its excellent gate control ability. , is less affected by the short-channel effect and ...

AI Technical Summary

Problems solved by technology

But for the nanowire device itself, in order to suppress its short channel effect, the channel radius must be reduced, which will cause the loss of driving current

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