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Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure

A lightly doped drain and nano-strip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as device performance degradation, and achieve low gate voltage swing, small threshold voltage drift, and low off-state current. Effect

Inactive Publication Date: 2013-05-01
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0006] Technical problem: The purpose of the present invention is to provide a graphene nano-ribbon with an asymmetric peak lightly doped drain structure to solve the problem of device performance degradation caused by the bipolar effect and a series of other side effects of the traditional graphene nano-ribbon device. Strip field effect transistor, which makes the ability of the device to suppress the hot carrier effect also enhanced

Method used

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  • Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure
  • Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure
  • Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure

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Embodiment Construction

[0017] The GNRFET of the class MOSFET structure that the present invention studies is as figure 1 As shown, it is a double-gate structure, in which Armchair-type graphene strips are used as the conductive channel, and the gate oxide layers on both sides of the channel are completely symmetrical, and the source / drain extension region of the device passes through the gas phase or liquid phase N-type heavy doping is carried out by chemical ion implantation, and peak (HALO) doping is performed near the source region of the graphene nanoribbon channel, while N-type light doping is used near the device drain region near the channel, thereby forming Asymmetric peak-lightly doped drain doping structure. The simulation of the device is to construct a tight-binding Hamiltonian in the real space, and regard the GNRFET as a figure 2 The graphene strip system shown, then based on the non-equilibrium Green's function method, self-consistent iterative solution of Poisson and Schrödinger eq...

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Abstract

The invention discloses a graphene nanoribbon field-effect tube (GNRFET) with an asymmetric HALO-lightly-doped drain (HALO-LDD) structure. A transport model which is suitable for a non-uniformly-doped GNRFET is constructed on the basis of a quantum mechanics non-balance Green function theoretical frame under an open boundary condition through self-consistent solution of 3D-Poisson and Schr.dinger equations, and the influence of an asymmetric HALO-LDD doping strategy on the electrical properties of the GNRFET is analyzed and calculated by using the model. As proved by comparison and analysis of the electric properties such as the output properties, transfer properties, switch current ratios, sub-threshold amplitudes and threshold voltage drifts of GNRFETs for which other doping strategies are adopted, the GNRFET with the doping structure has a higher switch current ratio, lower drain current, a smaller sub-threshold amplitude and a smaller threshold voltage drift, i.e., the GNRFET for which the asymmetric HALO-LDD doping strategy is adopted has a better grid control capability, and a short-groove effect and a hot carrier effect can be effectively restrained.

Description

technical field [0001] The invention relates to the field of graphene nano strip field effect tubes, in particular to a graphene nano strip field effect tube with an asymmetric peak-lightly doped drain (HALO-LDD) doping structure. Background technique [0002] In recent years, the appearance of graphene has stirred up huge waves in the scientific community, and it is considered to be one of the most promising carbon nanomaterials in the future due to its superior properties. Graphene has high electron mobility and high conductivity. Transistors made of graphene are not only small in size, low in power consumption, and low in requirements for the working environment, but also easy to design into various structures. However, since graphene is a zero-bandgap material and its Fermi energy is distributed linearly, it is not suitable for direct application in transistors. However, the band gap can be generated by cutting graphene into strips in a certain direction [HAN M Y, OZYIL...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/772H01L29/06H01L29/423
Inventor 王伟杨恒新蒋嗣韬陆峰
Owner NANJING UNIV OF POSTS & TELECOMM
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