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Drain current-improved thin film transistor

A thin-film transistor and drain current technology, which is applied in the direction of transistors, circuits, electrical components, etc., can solve the problems of carrier mobility decline, carrier occupation energy state density, jumping difficulties, etc.

Active Publication Date: 2015-09-09
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the doping concentration increases to a certain value, the carriers occupy most of the energy state density, the channels left for carrier transport decrease, and the jumping becomes difficult, so the carrier mobility decreases.

Method used

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  • Drain current-improved thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] N-type doping is carried out on the semiconductor layer, and the preparation scheme of each structural layer is as follows:

[0041] (1) A layer of 104 zinc oxide (ZnO) is sputtered on the 102 insulating layer film by sputtering process, and the thickness is controlled at 50-300nm;

[0042] (2) Indium is implanted into the active layer 104 by means of ion implantation. By controlling the energy and dose, the doped layer 103 presents a gradient shape. The implanted energy is set at 50-100kV, and the indium is doped according to the energy In a gradient shape, the dose is controlled at 1×10 16 / cm 2 ;

[0043] (3) The doped device is annealed in air, and the annealing temperature is 980°C;

[0044] (4) Depositing an aluminum film on the active layer 104 by vacuum evaporation technology;

[0045] (5) Use a spin coater to spin coat a layer of photoresist on the aluminum film, and then bake and cure;

[0046] (6) Use a specific mask to expose it to ultraviolet rays;

...

Embodiment 2

[0052] P-type doping is performed on the semiconductor layer, the substrate is Si, and the insulating layer is SiO 2 , the source and drain electrodes are Al, the preparation scheme of each structure is similar to that of Example 1, and the doping material is replaced by P 2 o 5 , ionized with an ion implanter and then doped with phosphorus.

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Abstract

The invention provides a drain current-improved thin film transistor. The drain current-improved thin film transistor includes a substrate, a gate insulating layer, an active layer, a source, a drain and a gate. The drain current-improved thin film transistor is characterized in that the active layer is doped, and a doping layer is gradient, or doping concentration is gradient; the gradient of the doping layer is increased from the source to the drain; and the gradient of the doping concentration is increased from the source to the drain. A material with a certain gradient is doped in the active layer, and therefore, when voltage of the source and the drain is boosted, a large number of carriers are adjacent to the drain, and thus, so the drain current at a saturated region will be increased, and a higher switching current ratio can be realized, and the switching speed of the component will become higher.

Description

technical field [0001] The invention relates to the technical field of thin film transistor preparation, in particular to a thin film transistor preparation method for improving drain current. Background technique [0002] As a core component in active driving, a thin film transistor includes several important components such as a substrate, a semiconductor channel layer, a dielectric layer, a gate, a source, and a drain. Thin film transistors are used as switching elements, that is, they only work in the two extreme conditions of on state (on) and off state (off). The switching current ratio is an important parameter of the device, which represents the sensitivity of the element, that is, the switching speed. High means that the switching speed of the component is faster, and the display effect can be better controlled. Therefore, in order to obtain a higher switching current ratio, the on-state current (also called the drain current) can be increased. The on-state curren...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/12
CPCH01L29/12H01L29/78618H01L2229/00
Inventor 郭太良叶芸张永爱汪江胜康冬茹林连秀
Owner FUZHOU UNIVERSITY
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