40 results about "Schrödinger equation" patented technology

The invention discloses a graphene field-effect transistor linearly doped with a bi-material gate. On the basis of a quantum mechanics nonequilibrium green function theoretical framework, a transport model suitable for the graphene field-effect transistor is built through self-consistent solution Poisson and Schrodinger equation, and further, the influence of a homogenous-material gate and a bi-material heterogeneous gate strategy on electrical properties of the GNRFET (graphene nanoribbon field-effect transistor) is analyzed and calculated by the model. Compared with the electrical properties, such as the output characteristic, the transfer characteristic, the switching current ratio and the like, of the field-effect transistor adopting the bi-material gate, the field-effect transistor adopting a bi-material heterogeneous gate underlap linear doped strategic structure has the larger switching current ratio, and smaller subthreshold amplitude and threshold voltage drift, and namely, the bi-material heterogeneous gate underlap linear doping has a better gate-control capacity, so that a short-channel effect, a band-to-band tunneling effect and a hot carrier effect can be restrained effectively.

The invention is a method for manufacturing an electron gas back barrier gallium nitride heterojunction field effect transistor, which is characterized in that different heterojunctions are independently designed for the inner channel under the gate electrode of the field effect transistor and the outer channel outside the gate electrode. The material structure keeps sufficient electron gas density in the outer channel under large RF gate voltage fluctuations, uses electron negative charges to generate a back potential barrier, and suppresses energy band distortion and channel blockage of the outer channel during the RF operation of the device. Then the barrier layer is thinned to form an inner channel heterojunction, and the control of the gate electrode to the conductance of the inner channel is improved to realize efficient radio frequency operation. By self-consistently solving the two-dimensional Poisson equation and the Schrödinger equation to study the interaction between the inner and outer channels, and to suppress the energy band distortion and current collapse in the radio frequency operation of the device. Balance the electric field distribution of the inner and outer channels and increase the breakdown voltage.