A linearly doped graphene field effect transistor with a dual-material gate

Abstract

The invention discloses a graphene field-effect transistor linearly doped with a bi-material gate. On the basis of a quantum mechanics nonequilibrium green function theoretical framework, a transport model suitable for the graphene field-effect transistor is built through self-consistent solution Poisson and Schrodinger equation, and further, the influence of a homogenous-material gate and a bi-material heterogeneous gate strategy on electrical properties of the GNRFET (graphene nanoribbon field-effect transistor) is analyzed and calculated by the model. Compared with the electrical properties, such as the output characteristic, the transfer characteristic, the switching current ratio and the like, of the field-effect transistor adopting the bi-material gate, the field-effect transistor adopting a bi-material heterogeneous gate underlap linear doped strategic structure has the larger switching current ratio, and smaller subthreshold amplitude and threshold voltage drift, and namely, the bi-material heterogeneous gate underlap linear doping has a better gate-control capacity, so that a short-channel effect, a band-to-band tunneling effect and a hot carrier effect can be restrained effectively.

Description

technical field [0001] The invention relates to the field of graphene field effect transistors, in particular to a heterogeneous grid structure of graphene field effect transistors. Background technique [0002] In recent years, the appearance of graphene has stirred up huge waves in the scientific community, and it is considered to be one of the most promising carbon nanomaterials in the future due to its superior properties. Graphene has high electron mobility and high conductivity. Transistors made of graphene are not only small in size, low in power consumption, and low in requirements for the working environment, but also easy to design into various structures. However, since graphene is a zero-bandgap material and its Fermi energy is distributed linearly, it is not suitable for direct application in transistors. However, the band gap can be generated by cutting graphene into strips in a certain direction [HAN M Y, OZYILMAZ B, KIM P, et al. Energy band-gap engineering ...

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Problems solved by technology

[0005] Technical problem: The purpose of this invention is to solve the problem of device performance degradation caused by short channel effect and other series of side effects of traditional nano-devices, and to provide a dual-material heterogeneous gate field effect transistor, so that the device can suppress heat-carrying current Sub-effects are also enhanced

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