Manufacturing method of high-square-resistance solar cell

Abstract

The invention relates to a manufacturing method of a high-square-resistance solar cell. The manufacturing method is characterized by comprising the following steps of: manufacturing an emitter junction on the surface of a silicon wafer through pre-diffusion treatment; removing an edge junction of the silicon wafer by using wet etching or plasma etching equipment; cleaning the silicon wafer by using RCA solution; placing the silicon wafer in a diffusion furnace for treatment to increase the junction depth and forming a silicon dioxide layer on the surface of the silicon wafer; manufacturing a silicon nitride layer on the silicon dioxide layer on the surface of the emitter junction through PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment; and finally, preparing a front face electrode, a back face electrode and a back face electric field by using screen printing equipment, and co-firing the electrodes and the electric field by using a sintering furnace. Thus, the high-square-resistance solar cell is manufactured by promoting an emitter junction process through secondary high temperature, and the doping concentration of the surface of the junction is reduced. Meanwhile, a proper silicon dioxide film is formed on the surface of the silicon wafer, and the film layer and a silicon nitride film which is manufactured subsequently form a stack layer, so that the surface passivation performance of the cell is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a battery, in particular to a method for manufacturing a high square resistance solar cell. Background technique [0002] The PN emitter junction is the heart of crystalline silicon solar cells, and the quality of the P-N emitter junction directly affects cell efficiency. Generally, parameters such as sheet resistance, surface concentration, and junction depth are used to characterize the quality of the PN emitter junction. [0003] The doping concentration curve of emitter junction with low surface concentration and shallow junction depth can be made by adjusting diffusion to help improve cell efficiency. The low surface concentration can reduce the surface recombination of the battery, and the shallow emitter junction can improve the blue light response of the battery. This type of battery generally has a relatively high square resistance value, which is called a high square resistance battery. ...

AI Technical Summary

Problems solved by technology

Although the high-resistance emitter junction made by the conventional diffusion method can reduce the surface concentration, the junction depth often becomes very shallow. In the subsequent sintering process of the front electrode, the risk of the silver electrode burning through the PN junction is increased, and the battery product is reduced. yield