68results about How to "Improve surface passivation effect" patented technology

A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.

This invention discloses an anti-reflection film of silicon solar cell used in solar cells by depositing a rich silicon SiN film on the positive surface of a silicon chip and a SiN film with ideal match on the rich silicon SiN film, in which, and the film content closing to the Si chip surface is high and the surface pasivation effect is better than the SiN film approaching to the idea match, the surface composition speed is more than one time less than the normal matched SiN film, and the rich Si film is thin and only absorbs 20%-30% short waves with the wavelength about 300nm and does not absorb long-middle lightwaves and other composition approaches to ideal chemical match.

The invention relates to a passivated contact N-type solar cell, a preparation method, an assembly and a system. The preparation method for a passivated contact N-type solar cell includes the steps of conducting doping treatment for the front surface of an N-type crystalline silicon substrate to form a p+ doped region; preparing a tunneling oxide layer on the back surface of the N-type crystalline silicon substrate, then preparing a phosphorus-containing amorphous silicon layer or phosphorus-containing polysilicon layer on the tunneling oxide layer, and then conducting annealing; and after preparation of passivated anti-reflection film and a passivated film, printing and sintering metal slurry to obtain a front electrode and a back electrode. The beneficial effects of the invention lie in that the tunneling oxide layer can provide the silicon substrate with an excellent surface passivated effect and achieve selective tunneling of carriers, the n+ doped polysilicon layer can effectively transmit the carriers for the metal electrode on the back surface to collect, the back metal electrode does not destroy the passivated layer on the surface of the crystalline silicon substrate, and thus thereby open-circuit voltage of the cell can be greatly increased.

The invention relates to a passivated contact N type crystal silicon cell, a preparation method thereof, a passivated contact N type crystal silicon cell assembly and a passivated contact N type crystal silicon cell system. The preparation method of the passivated contact N type crystal silicon cell includes the following steps that: a p+ doped region is formed on the front surface of an N-type crystalline silicon base body; a tunnel oxide layer is prepared on the back surface of the N-type crystalline silicon base body, a phosphorus-containing polycrystalline silicon layer is prepared on the tunnel oxide layer, and annealing is carried out; a passive antireflective film and a passive film are prepared; and back-surface silver electrodes and a front-surface electrode comprising metal wires are prepared. According to the preparation method of the passivated contact N type crystal silicon cell, the tunnel oxide layer and an n+ doped polycrystalline silicon layer can realize excellent surface passivation and field passivation, the back-surface silver electrodes do not destroy a passivation layer at the surface of the silicon base body, and carriers can selectively pass through the tunnel oxide layer and are collected by the metal electrode, and therefore, the passivated contact N type crystal silicon cell has high open-circuit voltage, short-circuit current and conversion efficiency; and the metal wires are adopted to form the front-surface electrode, and therefore, the silver slurry consumption of the cell can be reduced, and the production cost of a cell sheet can be reduced.

The invention discloses an austenitic stainless steel cleaning and passivating agent. The austenitic stainless steel cleaning and passivating agent is composed of, by mass, 30%-40% of citric acid, 0.1%-1% of ethylene diamine tetraacetic acid disodium, 1%-5% of 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), 3%-8% of glycollic acid, 3%-8% of phosphoric acid, 0.1%-2% of a non-ionic surface activeagent, 0.5%-3% of 322H, 0.5%-1% of sodium dodecylbenzenesulfonate, 0%-0.5% of yttrium nitrate, 0.1%-1% of corrosion inhibitor and the balance water. The prepared degreasing, rust removing and passivating agent has the characteristics of being environment-friendly, free of pungent smell and free of toxicity, harm to people and the environment can be remarkably reduced, and the production cost is effectively reduced.

The invention discloses a preparation method of a double-sided passivation contact P-type high-efficiency battery. The preparation method comprises the following steps: S1, cleaning and texturing; S2,preparing frontal polysilicon; S3, preparing a mask; S4, etching; S5, diffusion; S6, cleaning; S7, annealing; S8, preparing a back polysilicon layer; S9, preparing a front SiNx antireflection layer;and S10. Printing. The invention also discloses the double-sided passivation contact P-type high-efficiency battery comprising P-type monocrystalline silicon. An N-type emitter is provided with a front ultra-thin silicon oxide layer far from the P-type monocrystalline silicon. A back ultra-thin silicon oxide layer is arranged on the back surface of the P-type monocrystalline silicon. The contact structure is passivated by using the tunnel oxide layer on the front and back surfaces of the battery so as to have great surface passivation effect. The silicon surface is passivated exactly under thefront metal gate line and the back aluminum back field so as to avoid direct contact between the metal and the silicon base, reduce the surface recombination and improve the conversion efficiency ofthe battery.

The invention discloses a PID-resistant solar cell manufacturing method. The method includes the steps that under the room temperature, ultraviolet light penetrates through compressed air or oxygen with the thickness ranging from 0.2 cm to 1 cm and irradiates the diffusion surface of a silicon wafer, and then an oxidation film with the thickness ranging from 0.5 nm to 1 nm is grown. The silicon oxide layer can meet the requirement for PID resistance under the condition that the silicon oxide layer is extremely thin, and therefore the problem that due to the fact that the silicon oxide layer is too thick, the reflection reduction effect is lowered is solved. The solar cell product perfectly solves the contradictory problem between PID resistance and the light utilization ratio. Meanwhile, the oxide layer manufactured through the method has a good surface passivation effect, and the photoelectric conversion efficiency of the solar cell piece can be improved. The PID-resistant solar cell manufacturing method is simple in process and high in film forming speed, the film thickness can be automatically controlled, the thickness of the formed film can be controlled without special means, the practicability of the whole process is greatly improved, and an effective path is provided for large-scale industrial production.

The invention relates to a back-passivation efficient PERL battery technology. The back-passivation efficient PERL battery technology comprises the steps that a silicon wafer is cleaned in a HF / HNO3 mixed solution, a surface damaged layer is removed, double-side polishing is carried out, a SiOx film layer is deposited on a single-side, a suede face is made, POCl3 single-side deposition and diffusion are carried out in a high-temperature furnace, surface phosphorosilicate glass is removed, SiNx with a thickness of 80 nm is deposited on the front side of the silicon wafer, SiOx with a thickness ranging from 10 nm to 20 nm is deposited on the back side of a polished surface of the silicon wafer, an SiNx layer with a thickness ranging from 100 nm to 200 nm is deposited in a pipe-type or a plate-type PECVD equipment, slots and holes are formed in a back-passivation layer, and silk-screen printing and sintering are carried out on back aluminium paste, a back electrode and a positive electrode. Compared with the prior art, the technology is simplified, and therefore the large-scale mass production is facilitated.

The invention provides a quantum dot film, a preparation method thereof, a backlight module and a display device. In the quantum dot film, broad-band gap semiconductor shell can fill the defects of the core surfaces of quantum dots and improve the luminous efficiency of the quantum dots, the influence of the surface state of naked quantum dots on fluorescence can be reduced, and the fluorescence characteristic of the quantum dots can be improved. The bonding strength between a rigid inorganic aerogel and the broad-band gap semiconductor shell is much higher than the bonding strength between organic molecular ligands and the quantum dots, so that the quantum dot film has high stability. The rigid inorganic aerogel can form rigid epitaxial frameworks on the surfaces of core-shell quantum dots, and the dispersity of the quantum dots is increased, so that the quantum dots are not agglomerated in an epoxy resin polymer, and the luminous efficiency of the quantum dots is improved. The rigidepitaxial frameworks can also improve the surface passivation effect of the quantum dots, reduce the defect density, reduce the probability of nonradiative recombination and enhance the mobility of excitons in the quantum dots, so that the luminous efficiency of the quantum dots is improved, and finally the luminous efficiency of the quantum dot film is improved.

The invention relates to a passivating antireflection film of a high PID resistance type polycrystalline cell and a preparation process thereof. The passivating antireflection film comprises a first SiOx layer used as a bottom layer, a second SiOx layer used as a medium layer, and a third SiNx layer used as a top layer, wherein the first SiOx layer, the second SiOx layer and the third SiNx layer are sequentially deposited on the front surface of a monocrystalline chip substrate, and the total film thickness of the first SiOx layer, the second SiOx layer and the third SiNx layer is 65 to 120nm; the refraction rate is 1.9 to 2.25; the film thickness of the SiNx layer used as the medium layer is 10 to 50nm, and the refraction rate is 2.2 to 2.4; the film thickness of the SiNx layer used as the top layer is 30 to 80nm, and the refraction rate is 1.9 to 2.2; one or a plurality of SiNx layers are arranged as the top layer. The passivating antireflection film can reduce the reflecting rate and improve the passivating effect, so that the solar cell efficiency can be increased; the passivating antireflection film is outstanding in PID attenuating resisting characteristic.

The present invention provides a heterogeneous emitting electrode structure of a solar cell and a solar cell. The heterogeneous emitting electrode structure of the solar cell comprises a substrate, afirst doping layer, a passivation tunnelling layer, a second doping layer, a passivation antireflection layer and a front electrode. The substrate, the first doping layer, the passivation tunnelling layer, the second doping layer and the passivation antireflection layer are arranged in order, and the front electrode passes through the passivation antireflection layer and is in contact with the second doping layer. In the invention, the passivation tunnelling layer is added to effectively reduce the surface recombination rate of the cell so as to improve the surface passivation performance of the cell; and the front electrode is in contact with the second doping layer to effectively improve the transverse transmission efficiency of the front surface of the cell and reduce the serial resistance of the cell so as to improve the cell filling factor and conversion efficiency and improve the solar cell conversion efficiency.

The invention relates to a preparation method of a passivation contact type IBC (interdigitated back contact) cell. A doping processing method for the back surface of an N-type crystalline silicon substrate comprises the following steps: a back surface oxidation layer grows on the back surface of the N-type crystalline silicon substrate, then an intrinsic polycrystalline silicon layer or an intrinsic amorphous silicon layer grows on the back surface oxidation layer, and phosphorus ions are injected into the intrinsic polycrystalline silicon layer or the intrinsic amorphous silicon layer; thena mask grows, an n+ zone is protected by barrier slurry, interdigitated p+ and n+ zones are formed by printing the barrier slurry, the mask in the p+ zone is removed, annealing in the n+ zone and doping in the p+ zone are performed once by boron diffusion finally, and accordingly, alternate p+ and n+ doped zones are formed on the back surface. The preparation method of the passivation contact typeIBC cell has the following beneficial effects: the surface passivation effect is good, and open-circuit voltage and conversion efficiency are high; high-temperature procedures are reduced, and production cost is saved; damage to silicon chips due to laser ablation is reduced, and realization of cells with high conversion efficiency is more facilitated.

The invention relates to a method for achieving passivation of a tunneling oxide layer of an N-type double-sided battery. The method comprises six steps of texturing treatment, front PN junction manufacturing, tunneling oxide layer preparation, back phosphorus doping, passivation layer manufacturing and electrode printing. Compared with the prior art, the method has the advantages that a boron-doped ultrathin oxide layer is prepared on the surface of a silicon wafer through a diffusion method by adopting a tunneling oxide layer passivation contact technology, and the oxide layer forms a passivation contact structure on the surface of the silicon wafer, so that the production efficiency of the N-type double-sided battery is improved.

The invention provides a rapid annealing method for preparing a tunneling oxygen passivation contact structure, and the method comprises the following steps: (1) preheating: increasing the temperatureof a sample to be annealed to 150-250 DEG C in process gas, and performing the heat preservation for 1-2min; (2) hydrogen release: increasing the temperature to 300-600 DEG C, and performing heat preservation for 3-10min; (3) crystallization: increasing the temperature to 780-1100 DEG C, and performing heat preservation for 1-15min; (4) cooling: reducing the temperature to 600 DEG C or less within 5 minutes. Through temperature control, the method effectively avoids the phenomenon of film explosion of the sample, and prolongs the body service life of a silicon substrate through hydrogen passivation; meanwhile, doped atoms in a thin film are fully activated; in addition, due to the fact that the annealing time is relatively short, the diffusion degree of doped atoms to the silicon substrate is weakened, the surface auger recombination is effectively reduced, the surface passivation performance of the tunneling oxygen passivation contact structure is improved; meanwhile, the contact resistivity is low; in addition, the annealing time is shortened, the production efficiency is improved, the productivity is improved, and the production cost is saved.

The invention discloses a preparation method for an efficient solar cell. The preparation method comprises the steps of performing texturing, diffusing and polishing on a raw material silicon wafer, and manufacturing a selective emitting electrode, plating an anti-reflection film, performing silk-screen printing, and sintering to obtain the efficient solar cell. According to the preparation method, the step of polishing is performed before the step of manufacturing the selective emitting electrode; a selective emitting electrode preparing technology and a back polishing technology are combined, so that a large amount of cost consumption for HNO3 and HF can be saved; the preparation method is simple and easy to implement; compared with an IBC cell, a heterojunction cell, and other efficient solar cells, the efficient solar cell prepared by the invention can reduce complexity of process, and the large-scale production can be realized; and in addition, the Uoc, Isc and Eff of the solar cell prepared by the preparation method are greatly improved.

The invention discloses a crystalline silicon solar cell. The crystalline silicon solar cell comprises a crystalline silicon slice substrate. A plurality of transverse PN junctions perpendicular to the end faces of a silicon slice are arranged on the two opposite end faces of the crystalline silicon slice substrate respectively, the PN junctions are composed of P type layers and N type layers respectively, a suede surface and an antireflection layer are sequentially arranged on the front surface of the crystalline silicon slice substrate, and metal electrodes and/or P+ layers are arranged on the back surface of the crystalline silicon slice substrate. A manufacturing method of the crystalline silicon solar cell includes the steps of silicon slice pretreatment, vertical structure treatment, transverse PN junction manufacture, suede surface manufacture, antireflection layer deposition, insulating layer deposition and metallization. According to the crystalline silicon solar cell, incident light loss can be effectively reduced, electrode resistance and contact resistance are reduced, short circuit current, open circuit voltage and fill factors of the solar cell are effectively increased, and conversion efficiency of the solar cell is improved. The crystalline silicon solar cell is high in output voltage and can be used for special occasions.

The invention discloses a preparation method of an N type heterojunction two-sided solar battery. The preparation method comprises the following steps of S1, providing an N type silicon wafer substrate; S2, performing two-sided texturing on the N type silicon wafer substrate; S3, forming an n+ lightly doped layer on the front surface of the N type silicon wafer substrate; S4, performing corrosionand cleaning on the back surface of the N type silicon wafer substrate; S5, forming a front surface intrinsic amorphous silicon layer and an N type doped amorphous silicon layer on the n+ lightly doped layer on the front surface of the N type silicon wafer substrate through a process step in sequence; S6, forming a back surface intrinsic amorphous silicon layer and a P type doped amorphous siliconlayer on the back surface of the N type silicon wafer substrate through a process step in sequence; S7, forming TCO thin films on the front surface and the back surface of the N type silicon wafer substrate; and S8, forming a positive electrode on the back surface of the N type silicon wafer substrate, and forming a negative electrode on the front surface thereof. By adoption of the method, a high surface passivation effect can be obtained, the problem that utilization of a window layer of a solar battery front surface is suppressed in the prior art can be solved, and the conversion efficiency of the battery can be improved.

The invention relates to a heterojunction solar cell and a manufacturing method thereof. The heterojunction solar cell comprises a crystal silicon substrate. An N-type silicon thin layer and a P-type silicon thin layer are deposited on the substrate respectively. Transparent conducting films are deposited on the N-type silicon thin layer and/or P-type silicon thin layer. Back contact structure electrodes are arranged on the transparent conducting films or/and a substrate body. The manufacturing method comprises the following steps: depositing the N-type silicon thin layer and the P-type silicon thin layer on a substrate surface; depositing the transparent conducting films on the N-type silicon thin layer and/or P-type silicon thin layer; making the electrodes; sintering so as to generate a product and so on. According to the invention, excellent surface passivation performance of a back contact cell and a low temperature technology advantage of the heterojunction cell are effectively combined; reduction of minority-carrier lifetime of a silicon material and a diffusion length is effectively avoided; a short wave response of the cell to ultraviolet light is increased and loss of a substrate resistance is decreased; light loss caused by a surface grid line is effectively reduced or eliminated.

The invention discloses a method for preparing a large-scale small-pixel indium gallium arsenide focal plane detector. The method comprises the specific steps as follows: 1) depositing a silicon nitride diffusion mask, 2) opening a diffusion window, 3) performing closing-tube diffusion, 4) growing a P electrode, 5) performing rapid thermal annealing, 6) opening an N groove, 7) depositing the silicon nitride passivation film, 8) opening P and N electrode holes, 9) growing a thickened electrode, 10) metallizing, and 11) growing an indium bump. The invention has the advantages that: 1, the preparation process is simpler, and the technique of first growing the P-region electrode is used to reduce the risk of conduction between the P-region electrode and the N-region InP material caused by lithography deviation and over-etching; 2, the inductively coupled plasma chemical vapor deposition (ICPCVD) technology is used to grow the low-temperature silicon nitride passivation film, and the surface passivation layer of the chip is dense, which reduces the damage caused by the process to the surface of the material and improves the surface passivation effect; and 3, the lithographic growth technique is adopted for the metalized region and the indium bump region to reduce the contact resistance of the device.

The invention provides a solar cell with passivation contact and a preparation method thereof. The solar cell comprises a substrate, a back tunneling oxide layer, a back passivation film and a back anti-reflection layer are sequentially arranged on the back face of the substrate in a stacked mode, a back metal grid line is formed on the surface of the back anti-reflection layer, and the back metal grid line is in contact with the back passivation film; the front surface of the substrate is divided into a metal contact region and a non-metal contact region, the metal contact region is sequentially provided with a front tunneling oxide layer, a front passivation film and a front anti-reflection layer in a stacked manner, and a front metal grid line is formed on the surface of the front anti-reflection layer and is in passivation contact with the front passivation film. According to the solar cell, the recombination of a metal-semiconductor interface in a contact region is effectively reduced, and the surface passivation performance is improved, so that the open-circuit voltage and the fill factor of the cell are greatly improved, and the cell performance is improved.