3results about How to "Improve surface passivation effect" patented technology

The invention relates to a post-treatment method for a mercury-based II-VI group nanocrystal with a protective layer formed by chemical oxidation, and solves the problems of poor stability and photoelectric property degradation of the mercury-based II-VI group nanocrystal caused by surface oxidation, ligand desorption and environmental sensitivity. An oxide protection layer with the thickness of 1-3 nm is formed on the surface of the nanocrystal, the long-term stability and the photoelectric property of the nanocrystal are improved, and the method comprises the specific steps of centrifugal purification of the nanocrystal, preparation of an oxidizing agent solution, controllable oxidation reaction, functional ligand surface modification and purification treatment. The oxidation layer is ensured to be compact and stable by accurately adjusting the concentration of the oxidant, the reaction temperature and the reaction time. According to the method, oxygen and moisture permeation is effectively blocked, surface defects are reduced, the quantum yield and the photoelectric property are improved, and the method is widely applied to the fields of post-treatment of mercury-based II-VI group nanocrystals and photoelectric devices.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.