8results about How to "Improve surface passivation effect" patented technology

The invention relates to the technical field of power radio frequency discrete devices, in particular to an SBD device and a preparation method thereof. The method comprises the following steps: providing a first substrate; forming a bonding middle layer with a corundum type crystal structure on the upper surface of the first substrate; providing a beta-Ga2O3 layer, wherein the beta-Ga2O3 layer is provided with a first surface and a second surface; carrying out ion implantation on the second surface of the beta-Ga2O3 layer; a beta-Ga2O3 layer is transferred to the bonding intermediate layer, so that the second surface of the beta-Ga2O3 layer is in contact with the upper surface of the bonding intermediate layer, and a heterogeneous integrated substrate is formed; forming an epitaxial layer on the upper surface of the heterogeneous integrated substrate; a partially-covered field plate passivation layer is formed on the upper surface of the epitaxial layer, the field plate passivation layer sequentially comprises a buffer layer and a passivation layer from bottom to top, and the field plate structure can effectively suppress a strong electric field at the edge of a device electrode. The SBD device provided by the invention has relatively high device performance and reliability.

The utility model discloses a back contact cell and a photovoltaic assembly, and the back contact cell comprises a silicon substrate which is provided with a front surface and a back surface which are opposite to each other; the first doped crystalline silicon region and the second doped crystalline silicon region are both arranged on the back surface of the silicon substrate, and a first surface, far away from the silicon substrate, of the first doped crystalline silicon region and a second surface, far away from the silicon substrate, of the second doped crystalline silicon region are both polished surfaces; the isolation groove is used for separating the first doped crystalline silicon region from the second doped crystalline silicon region, the bottom of the isolation groove is provided with a pyramid-like first suede structure, and the distribution density of spire of the pyramid-like structure is 25 / 100 square micrometers to 80 / 100 square micrometers; and the back surface of the silicon substrate comprises overlapping areas corresponding to the first doped crystal silicon area and the second doped crystal silicon area, and the overlapping areas are polished surfaces. In the embodiment of the utility model, the flatness of the first surface and the second surface is high, the surface roughness is low, passivation is facilitated, and the passivation effect of a polished surface is obviously higher than that of a suede surface.

The invention belongs to the field of solar cells, and particularly relates to a passivation contact composite layer and a perovskite-crystalline silicon laminated solar cell. According to the passivation contact composite layer structure, surface passivation, electron selective transmission and carrier recombination of the silicon-bottom battery can be realized at the same time. The passivation contact composite layer comprises a SiO2 tunneling layer, a ZnO-based electron selective transmission layer and a hydrogen passivation cover layer. The wide-band-gap ZnO-based electron selective transmission layer can avoid the problem of optical parasitic absorption caused by passivation contact of the silicon thin film and has high electron concentration and bulk conductivity, and the ZnO-based electron selective transmission layer can further optimize the optical and electrical properties of the ZnO-based electron selective transmission layer by doping one or more of B, Al, Ga and H elements. In addition, in order to form good contact, the hydrogen passivation cap layer can be reserved or removed according to the conductivity type and the device structure. The ZnO-based electron selective transmission layer can be covered with interface layers such as MgOx, Mg, Al or Ti, so that the carrier recombination effect is further enhanced.

The invention relates to a post-treatment method for a mercury-based II-VI group nanocrystal with a protective layer formed by chemical oxidation, and solves the problems of poor stability and photoelectric property degradation of the mercury-based II-VI group nanocrystal caused by surface oxidation, ligand desorption and environmental sensitivity. An oxide protection layer with the thickness of 1-3 nm is formed on the surface of the nanocrystal, the long-term stability and the photoelectric property of the nanocrystal are improved, and the method comprises the specific steps of centrifugal purification of the nanocrystal, preparation of an oxidizing agent solution, controllable oxidation reaction, functional ligand surface modification and purification treatment. The oxidation layer is ensured to be compact and stable by accurately adjusting the concentration of the oxidant, the reaction temperature and the reaction time. According to the method, oxygen and moisture permeation is effectively blocked, surface defects are reduced, the quantum yield and the photoelectric property are improved, and the method is widely applied to the fields of post-treatment of mercury-based II-VI group nanocrystals and photoelectric devices.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

The present invention discloses a near-infrared single-photon array detector and a preparation method thereof, which are used to solve the technical problems of the existing single-photon array detector, such as the complicated preparation process and poor anti-crosstalk isolation effect. The array detector includes a substrate layer, an epitaxial layer arranged on the upper surface of the substrate layer, and an anti-reflection layer arranged on the lower surface of the substrate layer; the epitaxial layer includes a buffer layer, an absorption layer, a gradient layer, a charge layer and a cap layer grown in sequence from bottom to top; the buffer layer is close to the substrate layer; a passivation layer is arranged on the side of the cap layer away from the charge layer; a plurality of second electrode windows and a plurality of third electrode windows are evenly spaced on the passivation layer, a pixel anode metal electrode is arranged on the inner side of each second electrode window, and an isolation area electrode is arranged on the inner side of each third electrode window; the cap layer and the outer side of the second electrode window form an active diffusion area, and the third electrode window and the cap layer form a diffusion isolation area; the diffusion isolation areas are all step structures, and their depth is the same as the depth of the active diffusion area.

The invention discloses a double-sided Topcon photovoltaic cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of photovoltaic cells. The photovoltaic cell comprises a silicon wafer, the silicon wafer comprises a front face and a back face which are opposite, and a front face tunneling oxide layer, a first front face doped polycrystalline silicon layer, a first aluminum oxide layer and a first front face antireflection film layer are sequentially arranged in a non-grid-line area of the front face of the silicon wafer. A front tunneling oxide layer, a first front doped polycrystalline silicon layer, an oxidation barrier layer, a second front doped polycrystalline silicon layer, a second aluminum oxide layer and a second front antireflection film layer are sequentially arranged in a grid line area on the front of the silicon wafer, and the doping type of the first front doped polycrystalline silicon layer and the second front doped polycrystalline silicon layer is P type; the doping concentration of the second front doped polycrystalline silicon layer is greater than that of the first front doped polycrystalline silicon layer; a back tunneling oxide layer, a back doped polycrystalline silicon layer and a back antireflection film layer are sequentially arranged on the back of the silicon wafer; and the doping type of the back doped polycrystalline silicon layer is N type.