Crystalline silicon solar cell and manufacturing method thereof

Abstract

The invention discloses a crystalline silicon solar cell. The crystalline silicon solar cell comprises a crystalline silicon slice substrate. A plurality of transverse PN junctions perpendicular to the end faces of a silicon slice are arranged on the two opposite end faces of the crystalline silicon slice substrate respectively, the PN junctions are composed of P type layers and N type layers respectively, a suede surface and an antireflection layer are sequentially arranged on the front surface of the crystalline silicon slice substrate, and metal electrodes and / or P+ layers are arranged on the back surface of the crystalline silicon slice substrate. A manufacturing method of the crystalline silicon solar cell includes the steps of silicon slice pretreatment, vertical structure treatment, transverse PN junction manufacture, suede surface manufacture, antireflection layer deposition, insulating layer deposition and metallization. According to the crystalline silicon solar cell, incident light loss can be effectively reduced, electrode resistance and contact resistance are reduced, short circuit current, open circuit voltage and fill factors of the solar cell are effectively increased, and conversion efficiency of the solar cell is improved. The crystalline silicon solar cell is high in output voltage and can be used for special occasions.

Description

technical field [0001] The invention relates to a solar cell, in particular to a crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] At present, conventional industrial crystalline silicon solar cells are composed of a plane PN structure parallel to the surface of the silicon wafer, and the electrodes are respectively located on the front surface and the back surface of the silicon wafer, such as figure 1 shown. As shown in the figure, 1-P-type layer, 2-N-type layer, 3-texture, 4-anti-reflection layer, 5-P region electrode, 6-N region electrode, 7-P+ layer. [0003] The doping layer is parallel to the absorbing layer and located above the absorbing layer, and the incident light first passes through the doping layer and then enters the absorbing layer. Since the doped layer does not contribute to the photogenerated current, the absorption of light by the doped layer should be minimized to reduce light loss. [0004] The area of ...

AI Technical Summary

Problems solved by technology

Due to the presence of metal impurities on the surface grid lines, recombination will occur on the surface of the battery, resulting in a loss of battery efficiency

If all the thin grid lines and busbars on the front are moved to the back, the short circuit current of the battery will be greatly increased

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