320results about How to "Low conversion efficiency" patented technology

Catalysts comprised of at least one catalytically active element and at least one helper catalyst are disclosed. The catalysts may be used to increase the rate, the selectivity or lower the overpotential of chemical reactions. These catalysts may be useful for a variety of chemical reactions including in particular the electrochemical conversion of carbon dioxide to formic acid.

A fluorescent conversion medium including: fluorescent particles including semiconductor nanocrystals, the particles absorbing visible light to emit fluorescence of a different wavelength, and a transparent medium holding the fluorescent particles dispersed therein, and satisfying 0.4<C·d/r³<5.0 wherein r is the average diameter (unit: nm) of the fluorescent particles, d is the film thickness (unit: μm) of the fluorescent conversion medium, and C is the volume ratio (unit: vol %) of the fluorescent particles to the fluorescent conversion medium.

Electrochemical devices for converting carbon dioxide to useful reaction products include a solid or a liquid with a specific pH and/or water content. Chemical processes using the devices are also disclosed, including processes to produce CO, HCO⁻, H₂CO, (HCO₂), H₂CO₂, CH₃OH, CH₄, C₂H₄, CH₃CH₂OH, CH₃COO⁻, CH₃COOH, C₂H₆, (COOH)₂, (COO⁻)₂, acrylic acid, diphenyl carbonate, other carbonates, other organic acids and synthetic fuels. The electrochemical device can be a CO₂ sensor.

A DC-DC converter having conversion efficiency that is not lowered by input voltage change. A mode control circuit of the DC-DC converter monitors the input voltage, output voltage generated from the input voltage, and output current. The output current changes in accordance with the output voltage. Based on the input voltage, output voltage, and consumption current of a controller of the DC-DC converter, the mode control circuit generates a signal that is in accordance with load current in which efficiency of a switching regulator and efficiency of a linear regulator are substantially the same. The mode control circuit further compares a signal corresponding to the output current and the signal that is in accordance with the load current to generate a mode control signal. The controller operates the DC-DC converter as the switching regulator or the linear regulator in accordance with the mode control signal.

A power MOS-FET is used as a high side switch transistor for a non-insulated DC/DC converter. An electrode section that serves as a source terminal of the power MOS-FET is connected to one outer lead and two outer leads via bonding wires respectively. The outer lead is an external terminal connected to a path for driving the gate. Each of the outer leads is an external terminal connected to a main current path. Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.

Photoelectric conversion elements suitable for various applications and related components, and methods associated therewith, are described. A photoelectric conversion element may include a catalyst layer having at least two portions that are spaced from one another, and a current collector having a tip portion that extends toward or within the space between portions of the catalyst layer. A photoelectric conversion element may also include a semiconductor layer disposed a distance of between about 5 microns and about 20 microns away from the catalyst layer.

The invention discloses a gallium and indium doped single crystal silicon material for a solar battery, which consists of the following components according to atom number per cubic centimeter of the single crystal silicon material: 1.0X10<14> to 1.0X10<18> gallium, 5.0X10<12> to 5.0x10<16> indium and the balance of single crystal silicon. The invention also discloses a method for preparing the gallium and indium doped single crystal silicon material for the solar battery, which is implemented by the following steps of: dismantling a furnace by using a regular method, cleaning a hearth and assembling the furnace; vacuumizing the inside of a single crystal furnace and detecting the leakage of the single crystal furnace by using a regular method; pressuring materials and smelting the materials; stabilizing the melt; seeding crystals; performing shouldering; performing shoulder rotation; performing isodiametric growth; performing ending and cooling the obtained product; and stopping the furnace. The gallium and indium doped single crystal silicon material for the solar battery has the advantages of high conversion efficiency, low light attenuation, low oxide content in the single crystal silicon and uniform radial distribution in a single crystal silicon rod; and the preparation method of the invention effectively controls the thermal conversion of silicon melt and grows the high-quality gallium and indium doped single crystal silicon material for the solar battery.

It is an object of the invention to achieve weight saving and downsizing of an electronic apparatus, in particular a portable electronic apparatus while enlarging a display screen thereof. The invention provides an electronic apparatus using a light emitting device which includes a light emitting element, a color filter provided on either side of an anode or a cathode of the light emitting element, and two polarizers sandwiching the light emitting element and the color filter, in which the anode and the cathode transmit light, deflection angles of the two polarizers are different from each other, and light obtained from the light emitting element is white.

A power factor correction controller simultaneously controls several power converters to be operated at a critical conduction mode to improve the overall conversion efficiency and conversion power of the power factor corrector. The controller includes a primary power converter control circuit for feeding back an input voltage signal, an output voltage signal and a primary current signal, and outputting a primary gate control signal for controlling a primary power switch; at least one secondary power converter control circuit for receiving the primary gate control signal and outputting a secondary gate control signal for controlling a secondary power switch; and a phase splitter circuit for receiving the primary gate control signal to control a gate output driving circuit, so that the gate output driving circuit outputs the secondary gate control signal.

An incandescent lamp color light emitting diode lamp comprises a semiconductor blue light emitting diode chip having a center emission wavelength in a range of from 400 nm to 480 nm and a phosphor that absorbs light emitted from the diode chip to emit light having a different wavelength than the light emitted from the diode chip. The phosphor is represented by a general formula of M_p(Si, Al)₁₂(O, N)₁₆:Eu²⁺_q. The main phase is an α-SiAlON phosphor having an α SiAlON structure, wherein M is at least one element of Ca, Y, Mg, Li, Sc, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sr and p is from 0.75 to 1.0; and q is between 0.02 and 0.09. The diode lamp emits light having an emission color produced by a mixture of the light emitted from the semiconductor blue light emitting and the light emitted from the α-SiAlON. The chromaticity range thereof falls within the range defined by chromaticity coordinates (x, y) of (0.4775, 0.4283), (0.4594, 0.3971), (0.4348, 0.4185), and (0.4214, 0.3887) on the XYZ chromaticity diagram.

A DCDC converter includes a control circuit, a transistor in which switching is controlled by being supplied voltage output from the control circuit to a gate electrode of the transistor, a voltage conversion portion in which supply of input voltage is controlled by the switching of the transistor and output power commensurate with duty ratio of the switching of the transistor, and a detection circuit detecting the output power. Further, the control circuit includes a control signal generation circuit generating a control signal with a pulse voltage waveform and a selection circuit applying voltage of the control signal to the gate electrode in the case where current detected by the detection circuit is the same as or exceeds the threshold value and applying voltage for turning on the transistor to the gate electrode in the case where the current detected by the detection circuit falls below the threshold value.

A process for reducing the poling field of congruent grown LiNbO₃ and LiTaO₃ crystal-based nonlinear optical devices and for the production of domain structures with precise reproducibility of the main parameters by depositing a thin layer of a stechiometric LiNbO₃ film on the Z-face of a congruent LiNbO₃ or LiTaO₃ wafer. A new domain nucleation, evolution and stabilization process is provided to afford a uniform, short period domain superstructure for the conversion of near infra-red light to near ultraviolet, blue and green light

Photoacoustic measurements utilize emitted light to generate an acoustic response in tissue, with the acoustic response being proportional to the presence of an absorber of the light in the tissue. The present disclosure relates the use of focused light to acquire photoacoustic measurements. In one embodiment, the light is modulated, such as spatially modulated, such that the light may be focused within an otherwise scattering medium, such as tissue.

A method for operating an engine having at least a first and second cylinder [group], the first cylinder having a first electrically actuated valve and the second cylinder having a second electrically actuated valve, comprising of operating the first cylinder with a spark timing more retarded than a spark timing of a second cylinder, where during said operation, said first cylinder operates with a first operation of said first electrically actuated valve and said second cylinder operates with a second operation of said second electrically actuated valve, where said first operation is different from said second operation.

A method for an intrinsic type microcrystalline silicon layer is provided. In one embodiment, the microcrystalline silicon layer is fabricated by providing a substrate into a processing chamber, supplying a gas mixture into the processing chamber, applying a RF power at a first mode in the gas mixture, pulsing the gas mixture into the processing chamber, and applying the RF power at a second mode in the pulsed gas mixture.