62results about How to "Reduce compound loss" patented technology

The invention discloses a P-type tunneling oxide passivated contact solar cell and belongs to the technical field of crystalline silicon solar cells, aiming to solve the problem that the passivation effect of the back surface of the solar cell in the prior art is poor; the solar cell in the invention is characterized in that a silicon dioxide layer is formed on the front surface of a silicon wafer, and then an N-type heavily-doped polycrystalline silicon layer is formed on the silicon dioxide layer, so that the composite loss of a metal contact area is reduced; in addition, the tunneling oxideis combined with a heavily-doped silicon thin film to form a passivated contact structure, so that the original way of whole-face doping the back surface area is replaced, further, a high short-circuit current is kept, the open-circuit voltage is increased, the filling factor is improved, and the conversion efficiency of the battery is improved.

The invention discloses a preparing method of a whole back electrode P type crystalline silicon heterojunction solar battery. The method comprises the steps that nanometer suede, a P+ type boron shallow diffusion crystalline silicon layer and an SiOx passivation/SiNx anti-reflection layer are prepared on the front surface of a P type silicon substrate; a P++ type boron heavy diffusion crystalline silicon layer is prepared on the back face of the P type silicon substrate, then printing corrosion slurry is used for achieving local corrosion on the P++ type boron heavy diffusion crystalline silicon layer, an intrinsic amorphous silicon membrane layer and an n type amorphous silicon membrane layer are subjected to deposition in sequence, and intrinsic and n type amorphous silicon on the surface layer of a P++ type boron heavy diffusion crystalline silicon layer zone is removed; then a transparent conducting membrane layer is subjected to sputtering, a P zone and an N zone on the back face of the P type silicon substrate are separated through laser; and finally electrode printing is carried out, and low-temperature sintering is carried out. According to the method, all metal electrodes are moved to the back face of the battery, electrodes are not arranged on a light-borne face, component production cost is lowered, battery composite loss is lowered, accordingly, optical loss and resistance are obviously lowered, and efficiency is greatly improved.

The invention discloses an ACI type two-dimensional perovskite solar cell and a preparation method thereof. The perovskite absorption layer of the solar cell is a mixture of C(NH2)3I, CH3NH3I and PbI2. In the preparation process, CH3NH3Cl is added to serve as an additive. Compared with the conventional two-dimensional perovskite device, the addition of CH3NH3Cl greatly improves the crystallizationquality of the perovskite thin film, increases the grain size, reduces the carrier recombination loss caused by defects at the grain boundary, and prolongs the carrier service life. Meanwhile, effective gradient distribution of different n values is increased, the charge transmission efficiency is improved, the improvement of the photoelectric conversion efficiency of the perovskite battery device is finally directly determined, the series-parallel resistance of the device is improved, and the photoelectric conversion efficiency of 18.48% is finally obtained. The excellent photoelectric properties and device efficiency of the perovskite solar cell are helpful for promoting the commercial application of the perovskite solar cell.

The invention relates to a preparation method for an ultra-long TiO2 nanowire array thin-film photo-anode, and belongs to the field of dye-sensitized solar cells. The problem that photon-generated carrier composite losses of an existing dye-sensitized solar cell TiO2 nanocrystalline photo-anode are large is solved. The preparation method comprises the steps that a solvothermal synthesis reaction is carried out at a time, an ethyl alcohol, hydrochloric acid and TiCl4 mixed solution is used as a precursor, and an ultra-long one-dimensional TiO2 nanowire array thin film is made to grow on a piece of FTO conductive glass. The TiO2 nanowire array thin film photo-anode is directly applied on the dye-sensitized solar cell; according to the one-dimensional structure, the electron transport speed is high, the photon-generated carrier composite losses are small, and the performance of the dye-sensitized solar cell is improved.

The invention discloses a thin film crystal silicon perovskite heterojunction solar cell manufacturing method, which relates to a semiconductor device manufacturing method particularly suitable for converting optical energy into electric energy, and is a manufacturing method based on an excimer laser crystallization method. The method of the invention comprises steps: the excimer laser crystallization method is used for manufacturing a P-type thin film crystal silicon layer on a transparent conductive substrate, spin coating of a perovskite light absorption layer is carried out on the P-type thin film crystal silicon layer, an electron transport layer formed by dense titanium dioxide is manufactured on the perovskite light absorption layer, a back electrode is manufactured on the electron transport layer formed by the dense titanium dioxide, and finally, a thin film crystal silicon perovskite heterojunction solar cell composed of the transparent conductive substrate, the P-type thin film crystal silicon layer, the perovskite light absorption layer, the electron transport layer formed by the dense titanium dioxide and the back electrode is manufactured. Defects that the layer transfer technique used in the prior art has multiple steps and is complicated, the obtained thin film crystal silicon has a small size, the finished product rate is low, and the thickness of the thin film crystal silicon can not be over thin can be overcome.

The invention discloses a silicon thin film solar cell and a preparation method thereof. A plurality of layers of an n-type amorphous silicon film, an i-type amorphous silicon film and a p-type si film are sequentially overlapped on a transparent conducting substrate from bottom to top. The i-type amorphous silicon film, the n-type amorphous silicon film and a transparent conducting film (TCO) are sequentially overlapped on the p-type si film to prepare a double-junction silicon film solar cell; or a layer of Al film is directly deposited on the p-type si film to prepare a single-junction silicon film solar cell. The substrate has wide selection range and low cost, the photoelectric conversion efficiency is high, the deposition temperature is low and the technique is simple.

The invention provides two TiO2-based photocatalytic composite-electrode fuel cells with different structures, and an apparatus used for processing organic wastewater. The apparatus comprises a speed regulator, a driving motor, a photocathode shaft, a photocathode rotary table, plural sheets of photo-anodes, a fuel cell reaction tank, and an excitation light source. The apparatus is characterized in that: a draft-tube is arranged on the bottom of the fuel cell reaction tank; and a water pump is arranged on the draft-tube. The water pump is started; the organic wastewater is transferred from the draft-tube on the bottom of the photo-anode reaction tank to the top of the photo-anodes, and flows down, such that a liquid film is formed on the surfaces of the photo-anodes; meanwhile, the driving motor is started, the rotation speed of the photocathode rotary table is controlled by the speed regulator, such that the photocathode rotary table rotates, and a liquid film is also formed on the surface of the photocathode. Photo-anodes with different structures are adopted, such that the processing efficiency of the organic wastewater is improved. The photo-anodes are designed as rectangles, such that the liquid film formed by the water flow on the surfaces of the photo-anodes is more uniform, and the organic wastewater can be more effectively processed by using the TiO2-based photocatalytic composite-electrode fuel cell.

The invention provides a full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and a preparation method thereof. The solar cell comprises an FTO conductive glass substrate, a titanium dioxide (TiO<2>) layer, an inorganic CsPbBrI<2> perovskite layer, a selenized Sb<2>Se<3> layer and a metal counter electrode layer which are sequentially arranged from bottom to top. According tothe invention, the Sb<2>Se<3> is selenized to prepare the selenized Sb<2>Se<3> layer, and the inorganic CsPbBrI<2> perovskite layer and the selenized Sb<2>Se<3> layer are compounded into the heterojunction to prepare the full-inorganic P/N heterojunction antimony selenide/perovskite solar cell. The photoelectric conversion efficiency of the prepared solar cell is greatly improved, and the solar cell has good long-term working stability.

The invention discloses a preparation method of a CaTi2O5tremella-like micro-nano structure photocatalyst, which comprises the steps of dissolving a titanium compound in an organic solvent, adding distilled water to form powder A, dissolving calcium chloride dihydrate in the distilled water, adding an organic solvent, stirring uniformly to form liquid B, adding the liquid B into the powder A, regulating a pH (potential of hydrogen) value of a system to 2-4, stirring and mixing, putting in a hydrothermal kettle for hydrothermal reaction, and washing a reaction product with the distilled water to form the CaTi2O5tremella-like micro-nano structure photocatalyst. In addition, the invention further discloses a product prepared by the preparation method. The method has a simple process route and low production cost, does not require a special device; the pure CaTi2O5tremella-like micro-nano structure photocatalyst with outstanding photocatalysis performance is obtained without a surfactant or a template; the yield and controllability are high; the product still keeps a higher photocatalytic degradation rate after multiple reuse and is easy to recover; and the use value and economic benefits of the product in the industrial circle are effectively improved.

The invention discloses a laser boron-doped back passivation solar cell and a preparation method thereof, aims at improving a back passivation structure of a solar cell in the prior art, and relates to the technical field of solar cells. The solar cell comprises P-type silicon; a phosphorus doping layer, a front passivation antireflection layer and an Ag gate finger electrode are sequentially arranged on the front surface of the P-type silicon upwards; a passivation layer, a back passivation antireflection layer and an Al gate finger electrode are sequentially arranged on the back surface of the P-type silicon downwards, a heavily doped region is further arranged on the back surface of the P-type silicon, the heavily doped region comprises a boron heavily doped layer and a local contact aluminum doped layer, and the Al gate finger electrode is connected with the lower surface of the P-type silicon through the heavily doped region; by forming the heavily doped region on the back surfaceof the cell, the composite loss of the metal contact region can be effectively reduced, the contact resistance can be reduced, the passivation capability can be enhanced, a relatively high short-circuit current can be maintained, the open-circuit voltage can be increased, and a filling factor can be improved, so that the solar cell with high conversion efficiency and high stability can be realized.

The invention discloses a benzothiadiazole boron nitrogen derivative material and application thereof in an organic electronic device, wherein R1 and R2 are independently selected from C6-C12 alkyl chains, and R3 is any one of hydrogen, fluorine, chlorine, bromine, iodine or methyl. The invention provides an application of the compound in an organic electronic device, wherein the organic electronic device comprises at least one compound as described above. According to the invention, the benzothiadiazole boron-nitrogen derivative has infrared absorption with an absorption wavelength at a long wavelength, the absorption spectrum of the benzothiadiazole boron-nitrogen derivative has a wide absorption range, and the benzothiadiazole boron-nitrogen derivative has high photoelectric conversion efficiency; an organic solar cell element prepared from the benzothiadiazole boron-nitrogen derivative has high photoelectric conversion efficiency and long device service life; and boron and nitrogen have opposite resonance effects, the corresponding boron-nitrogen fused ring compound can improve the triplet state energy level of molecules, but does not affect the accumulation and film formation of the molecules, the recombination loss is reduced, and the battery efficiency is effectively improved.

The embodiment of the invention provides a solar cell. The solar cell comprises: a substrate; an emitting electrode, a first passivation film, an antireflection film and a first electrode which are sequentially stacked on the upper surface of the substrate; and a tunneling layer, a retarding layer, a field passivation layer, a second passivation film and a second electrode which are sequentially stacked on the lower surface of the substrate, wherein the retarding layer is used for retarding doped ions in the field passivation layer from migrating to the substrate, the retarding layer comprisesa first retarding layer body coinciding with the projection of the second electrode and a second retarding layer body with the projection staggered, and at least the second blocking layer is an intrinsic semiconductor. In the direction perpendicular to the surface of the substrate, the thickness of the first retarding layer is smaller than that of the second retarding layer, and the surface, awayfrom the substrate, of the first retarding layer is flush with the surface, away from the substrate, of the second retarding layer. The embodiment of the invention is beneficial to reducing the recombination loss of the solar cell and improving the conversion efficiency of the solar cell.

The invention is suitable for the technical field of solar cell processing, and provides a PERC cell processing technology capable of reducing back field recombination loss. The technology comprises the steps of texturing, diffusion, etching, annealing, passive film deposition on the back surface, anti-reflection film deposition on the front surface, back surface laser grooving, silk-screen printing and sintering. Between the step of back surface laser grooving and the step of silk-screen printing, the method also comprises the following steps: back surface alkali polishing: polishing the back surface of the silicon wafer by using an alkali solution, and cleaning and drying the silicon wafer. According to the PERC cell processing technology capable of reducing the back field recombination loss provided by the invention, a back alkali polishing technology is added, a damaged layer formed by ablation during laser grooving on the back of the silicon wafer can be removed by using an alkali solution, and recombination of carriers by the damaged layer of the silicon wafer is reduced, so that the back field recombination loss of the PERC cell is reduced, the open-circuit voltage and the short-circuit current of the PERC battery can be improved, and the conversion efficiency of the PERC battery manufactured by the process can be improved by 0.03-0.06%.

The invention discloses a benzotriazole boron nitrogen derivative small molecular material and application thereof in an organic electronic device. The compound is an n-type non-fullerene acceptor material taking benzotriazole with an alkyl chain as a central core. An organic electronic device comprises at least one compound as described above. The invention relates to a benzotriazole boron nitrogen derivative, which has infrared absorption with long absorption wavelength, and the absorption spectrum of the benzotriazole boron nitrogen derivative has a wide absorption range and high photoelectric conversion efficiency. An organic solar cell element prepared from the benzotriazole boron nitrogen derivative has high photoelectric conversion efficiency and long device service life; boron and nitrogen have opposite resonance effects, the corresponding boron-nitrogen fused ring compound can improve the triplet state energy level of molecules, but does not affect the accumulation and film formation of the molecules, the recombination loss is reduced, and the battery efficiency is effectively improved.

The invention provides a heterojunction solar cell. The heterojunction solar cell comprises a first thin film provided with a first electric conduction type, an active area, and a second thin film provided with a second electric conduction type, wherein the active area and the second thin film are sequentially arranged on the surface of the first thin film; a first gradual change buffer layer which is heterogeneous with the first thin film is further arranged between the first thin film and the active area, and a second gradual change buffer layer which is heterogeneous with the second thin film is further arranged between the second thin film and the active area. The invention further provides a preparation method of the heterojunction solar cell, which comprises the following steps: 1), growing the first gradual change buffer layer heterogeneous with the first thin film on the exposed surface of the first thin film; 2), growing the active area epitaxially on the exposed surface of the first gradual change buffer layer; 3), growing the second gradual change buffer layer on the exposed surface of the active area; and 4), growing a second thin film layer heterogeneous with the second gradual change buffer layer on the exposed surface of the second gradual change buffer layer, and the electric conduction types of the first thin film and the second thin film are opposite.

The invention relates to a preparation method of a Sb2Se3 solar cell based on a SnO2 buffer layer, which comprises the following steps of: depositing a SnO2 thin film by using a magnetron sputtering method, depositing a Sb2Se3 thin film by using a near-space sublimation method CSS, respectively annealing and modifying the SnO2 thin film and the Sb2Se3 thin film, and finally preparing a thin film solar cell device with an FTO/SnO2/Sb2Se3/Au top lining structure. Compared with a spray pyrolysis method and a low-temperature pyrolysis method, the magnetron sputtering method has the advantages that the prepared SnO2 film is more compact, higher in purity, better in repeatability and controllable in thickness, introduction of impurities is effectively avoided through sputtering in a high-vacuum chamber, the prepared film is better in uniformity, and waste liquid and any harmful gas cannot be generated; and the CSS is a preparation method for heating a source material to quickly sublimate the source material and depositing the thin film on the substrate, and the CSS source is high in utilization rate, simple in process, good in repeatability and high in film layer purity, so that the Sb2Se3 thin film prepared by the CSS is more suitable for commercial production.

The invention discloses an electron selective passivation contact structure, a solar cell and a preparation method. The electron selective passivation contact structure comprises a crystalline silicon substrate; the tunneling passivation layer is deposited on the crystalline silicon substrate; the electron transport layer is deposited on the tunneling passivation layer, and the electron transport layer is a magnesium oxide film; the transparent electrode is deposited on the electron transport layer, and the transparent electrode is a zinc oxide transparent electrode; and the metal electrode is deposited on the zinc oxide transparent electrode. The crystalline silicon solar cell has high transparency and excellent passivation contact performance, carrier recombination loss at the metal-crystalline silicon contact position can be effectively reduced, parasitic optical absorption can be reduced, and the photoelectric conversion efficiency of the crystalline silicon solar cell is improved.

A photovoltaic cell having a semiconductor substrate of a first conductivity type, the back surface of the semiconductor substrate having a base surface region and an emitter surface region of a first pattern, the base surface region and the emitter surface region being respectively coupled to a second One and the second output terminal. The first further surface area having the second pattern and the second further surface area on the front side are electrically floating with respect to the first and second output terminals. The first further surface region and the second further surface region have a first conductivity type and a second conductivity type, respectively. The first further surface region and the second further surface region at least partially overlap the emitter region and the base region, respectively, when viewed in projection in a direction perpendicular to the first surface.