28results about How to "Reduce compound loss" patented technology

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention relates to the technical field of environmental chemistry and photoelectrocatalysis, in particular to a TiO2 / polyaniline organic-inorganic hybrid composite photoanode which is characterized in that a stainless steel sheet serves as a substrate of the composite photoanode, a TiO2 / polyaniline composite film layer serves as a surface layer of the composite photoanode, and TiO2 / polyaniline in the composite layer of the photoanode is combined with the stainless steel substrate through the action of a coalescing agent. The surface of the composite photoanode is smooth and flat, and the TiO2 / polyaniline composite photoanode is low in cost, small in chemical reagent danger, small in environmental harm and capable of enhancing visible light absorption, improving the absorption capacity of the composite anode in a visible light area and fully improving the utilization efficiency of solar energy. And moreover, the interfacial interaction between TiO2 and polyaniline can be beneficial to promoting charge separation, providing a more effective charge transmission channel and reducing charge recombination loss, so that the photoelectric conversion efficiency is improved.

The invention relates to the technical field of solar cells, and discloses a laminated cell and a preparation method thereof, and the laminated cell comprises a perovskite cell structure, a first composite layer, a second composite layer and a crystalline silicon cell structure which are sequentially laminated from a light receiving surface to a backlight surface. The doping concentration of the conductive impurities in the first composite layer is gradually increased in a gradient manner along the direction from the perovskite cell structure to the second composite layer; and the doping concentration of the conductive impurities in the second composite layer is gradually reduced in a gradient manner along the direction from the first composite layer to the crystalline silicon cell structure. The part with the relatively high doping concentration of the conductive impurities maximizes the transmission efficiency of current carriers and reduces the recombination loss, and the part with the relatively low doping concentration of the conductive impurities reduces the recombination loss of interface joints, so that the overall performance of the laminated cell is improved.

The invention discloses a VOCs tail gas treatment system, and belongs to the technical field of waste gas treatment. The VOCs tail gas treatment system comprises the following steps: (1) pretreatment: carrying out condensation treatment on collected VOCs tail gas; (2) filtering: carrying out primary filtering on the VOCs tail gas subjected to condensation treatment through a filter; (3) adsorption: adsorbing the VOCs tail gas subjected to primary filtration treatment by adopting a modified molecular sieve adsorbent; (4) catalysis: carrying out degradation treatment on the VOCs tail gas subjected to adsorption treatment through a photocatalysis system; and (5) re-adsorption: adsorbing the VOCs tail gas subjected to degradation treatment by adopting modified activated carbon, and discharging the VOCs tail gas after the VOCs tail gas is detected to be qualified. The VOCs tail gas treatment system is sequentially provided with a condensation pretreatment step, a filtering step, a molecular sieve adsorption step, a photocatalysis step and an activated carbon re-adsorption step, an adsorption method and a catalysis method are combined, the two methods have a synergistic effect, and the VOCs tail gas treatment efficiency can be improved.

The invention relates to a doping method for a passivation layer of a TOPCon solar cell and the TOPCon solar cell, and aims to effectively improve the energy conversion efficiency of the solar cell. According to the doping method, the SiOdoped buffer layer is introduced in the doping process of the polycrystalline silicon passivation layer of the TOPCon solar cell, the layer can effectively inhibit the diffusion depth of a dopant in the polycrystalline silicon passivation layer, the Auger recombination effect on the surface of the cell is reduced, and then the open-circuit voltage and the cell efficiency are improved. By depositing the SiO doped buffer layer on the surface of the polycrystalline silicon passivation layer, the diffusion of a dopant can be controlled within a shallow gradient range, so that the interface recombination and photoelectric conversion efficiency of the cell are improved. The method not only improves the overall performance of the solar cell, but also has high industrial application potential. A test result shows that the photoelectric conversion efficiency of the prepared TOPCon solar cell is improved by more than 0.1%, and the prepared TOPCon solar cell has a good application prospect.

The invention discloses a metal complex type non-fullerene electron acceptor material, a preparation method and application, and relates to the technical field of organic photovoltaic devices, the novel metal complex type non-fullerene electron acceptor material is designed and synthesized by introducing metal ions into non-fullerene acceptor molecules. By reasonably designing the structure of the metal complex, the extinction coefficient of the material is remarkably improved, so that the material has higher light absorption capacity under unit thickness, and the light capture efficiency is improved. Heavy metal elements in the metal complex have relatively long excited state life and relatively strong carrier migration characteristics, so that the life of a photon-generated carrier is effectively prolonged, the recombination loss is reduced, and the photoelectric conversion efficiency is further improved. By introducing the metal complex, the charge transmission performance of a non-fullerene receptor is enhanced, the problems of short exciton diffusion distance and high exciton recombination rate in a traditional organic semiconductor material are solved, and photon-generated carriers can be effectively separated and migrated in a thin active layer.

The present invention provides a novel organic electron transport layer, a perovskite solar cell and a preparation method and application thereof, wherein the battery structure comprises an anode (ITO glass), a hole transport layer, a perovskite layer, an organic electron transport layer and a cathode. The preparation method of the organic electron transport layer is to dissolve m-ITTC molecules with long chains in a chlorobenzene solution of PCBM, and directly spin-coat them on the perovskite layer to form a high-quality organic electron transport layer film for electron transmission, with a photoelectric conversion efficiency of 8.37193%. The doping of m-ITIC can alleviate the aggregation of PCBM, so that the formed organic electron transport layer film is more evenly covered on the perovskite layer, which is conducive to the transmission of electrons and can block holes at the same time, greatly improving the efficiency and photoelectric performance of the battery; and the operation is simple, the cost is low, and commercial production can be carried out.

The present application is applicable to the field of solar cell technology, and provides a method for manufacturing a solar cell and a solar cell. The method for manufacturing a solar cell includes: making a silicon wafer into a cell substrate for a circuit to be manufactured, the cell substrate includes a plurality of spaced first regions and a plurality of spaced second regions, the first region intersecting the second region; preparing a silicon nitride layer in the first region; printing a first slurry on the silicon nitride layer; printing a second slurry in the second region; sintering the cell substrate printed with the first slurry and the second slurry, so that the main grid sintered by the first slurry is embedded in the silicon nitride layer, and the secondary grid sintered by the second slurry forms a gold-semiconductor contact with the silicon wafer, and the secondary grid overlaps the main grid. In this way, the main grid has better weldability, and the composite loss under the main grid is reduced.

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

The invention discloses a solar cell, an assembly and a system. The solar cell includes: a silicon substrate; the homojunction is located in the silicon substrate and extends inwards from the first surface and / or the second surface of the silicon substrate, the surface doping concentration of the homojunction is 1 * 10 < 15 > cm <-3 >-1 * 10 < 19 > cm <-3 >, and the junction depth of the homojunction is larger than or equal to 100 nm and smaller than or equal to the thickness of the silicon substrate; the heterojunction is located on the surface of the side, provided with the homojunction, of the silicon substrate; the heterojunction comprises a passivation selective contact structure, the passivation selective contact structure comprises a passivation layer and a selective transmission layer which are sequentially stacked on the surface of the homojunction, and the selective transmission layer comprises a hole selective transmission layer and / or an electron selective transmission layer; or the heterojunction comprises an amorphous silicon heterojunction structure, and the amorphous silicon heterojunction structure comprises an intrinsic amorphous silicon layer and a doped semiconductor layer which are sequentially stacked on the surface of the homojunction. The solar cell provided by the invention has relatively high conversion efficiency.

The present application relates to a passivation film, a method for preparing the passivation film, and a solar cell. The passivation film includes two passivation layers. The first passivation layer is arranged on the surface of the substrate, and the second passivation layer is arranged on the surface of the first passivation layer away from the substrate. The field passivation effect of the first passivation layer is better than the field passivation effect of the second passivation layer, that is, the field passivation effect of the film layer close to the substrate is better than the field passivation effect of the top, which can prevent charge carriers of similar polarity from approaching the substrate, greatly reduce the number of carriers of one polarity reaching the surface, and significantly reduce the recombination loss on the substrate surface. The chemical passivation effect of the second passivation layer is better than the first passivation effect. The chemical passivation effect of the upper surface film layer of the outermost layer of the passivation film is the best, so that the atoms have enough time and energy to reach the optimal energy level, thereby saturating the surface dangling bonds, reducing their recombination effect on other positive and negative charges, and ensuring the passivation effect of the passivation film. That is, the passivation film in the present application can take into account both the field passivation effect and the chemical passivation effect.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

The invention provides a composite electron transport layer, a preparation method thereof, a perovskite solar cell and application. The composite electron transport layer comprises a C60 layer, a SnO2 layer and an IWO layer which are stacked; the thickness of the SnO2 layer is larger than or equal to 60 nm, and the thickness of the IWO layer is smaller than or equal to 5 nm. The introduction of the thin IWO layer can improve the transmission rate of the electron transmission layer and improve the interface defect between SnO2 and the electrode, so that the battery has higher open voltage and stability. Moreover, the thick SnO2 layer can increase an electron transmission channel, so that photo-generated electrons can be transmitted to the electrode more quickly and efficiently, and the thin IWO layer can improve the light transmittance, increase the generation of photo-generated current, cooperate with the SnO2 layer, adjust the energy level matching between the perovskite layer and the electrode, promote charge transmission and reduce charge recombination. The perovskite solar cell prepared on the basis of the method shows excellent photoelectric conversion efficiency.

The application relates to the technical field of solar cells, and provides a solar cell, a preparation method of the solar cell, a battery assembly and a photovoltaic system. In the solar cell, a substrate of the battery is a p-type silicon wafer, a partial region on the front surface of the p-type silicon wafer is provided with an n-type diffusion layer, a first dielectric layer and an n-type doped layer are arranged in a laminated mode on the remaining region, a partial region on the back surface of the p-type silicon wafer is provided with a p-type diffusion layer, and a first dielectric layer and a p-type doped layer are arranged in a laminated mode on the remaining region. In this way, the anti-radiation characteristic of the p-type silicon wafer is utilized, the local passivation contact structure and the local n-type diffusion layer and p-type diffusion layer on the front surface and the back surface are combined, surface recombination and parasitic absorption are effectively reduced, the initial efficiency of the solar cell is ensured, and the solar cell can also maintain a high photoelectric conversion efficiency in an extreme irradiation environment.

This invention discloses a battery electrode and a method for preparing a battery cell, a photovoltaic cell, a tandem cell, and a photovoltaic module, belonging to the field of solar cell technology. The battery electrode of this invention is located on the light-receiving surface and the back-light-receiving surface of the battery cell, including multiple main grids extending longitudinally and multiple fine grids extending laterally. The main grids and fine grids intersect to form a grid and are interconnected. A groove structure matching the fine grids is provided on the light-receiving surface or both sides of the battery cell. The fine grids are embedded inside the grooves, and the fine grids directly contact the boron-doped layer of the battery cell on three sides without passivation film obstruction. This invention can significantly reduce contact resistance, improve light blocking, and facilitate efficient photoelectric conversion. This electrode structure can be superimposed with any battery structure, such as xBC, HJT, perovskite tandem cells, etc.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

The invention relates to the technical field of catalyst preparation, in particular to a preparation method of an In2O3-based finger-shaped photocatalyst, which comprises the following steps: step 1, adding a certain amount of indium source and terephthalic acid into a reactor, then adding N, N-dimethylformamide (DMF), and stirring to completely dissolve the solid to obtain a solution A; 2, the solution A obtained in the step 1 is placed in an oil bath pan for oil bath heating, after the reaction is finished, cooling, filtering, washing and drying are conducted, and solid powder can be obtained; compared with the prior art, the preparation method has the advantages that a solvothermal synthesis technology is utilized, the microstructure of In2O3 is finely regulated and controlled, a unique finger appearance is formed, then iridium monatomic is accurately supported through a wet chemical method, and the density and electron transfer efficiency of photocatalytic active sites are remarkably improved. The obtained catalyst shows excellent gamma-lactam photocatalytic conversion capability under visible light irradiation, and the conversion rate is up to 95% or above.

The invention provides a preparation method of a solar cell, and the method comprises the steps: forming a first transition layer, a first conductive amorphous silicon layer and a first protection layer on the front surface of a substrate in a patterning manner, and forming a front surface passivation contact structure which is locally passivated; depositing a second protection layer on the front passivation contact structure and the residual area on the front of the substrate at the same time, and removing the second protection layer plated on the back side in a winding manner; depositing a second transition layer, a second conductive amorphous silicon layer and a third protective layer on the back surface of the substrate from which the second protective layer is removed; forming a water film on the third protective layer on the back surface of the substrate; removing the second conductive amorphous silicon layer and the third protection layer which are arranged on the side surface and are plated on the front surface in a winding manner under the condition that the third protection layer on the back surface of the substrate has water film protection; and further removing the second transition layer wound and plated on the front surface and the second protection layer on the front surface by adopting a cleaning process. According to the technical scheme, the photoelectric conversion efficiency of the cell is improved, and the high efficiency and reliability of the manufacturing process are ensured.

The present invention belongs to a method for improving the photoelectric conversion efficiency and stability of tin-lead alloy perovskite solar cells, and specifically relates to a method for effectively regulating the energy disorder of the film by hydrogen bonding and coordination with the tin-lead alloy perovskite to inhibit the photoelectric conversion efficiency and stability of the tin-lead alloy perovskite solar cells. 2+ The method of reducing the defect density of the film and optimizing the extraction and transport of carriers is to add additives to SnF 2 The present invention effectively inhibits the Sn-lead alloy perovskite film from being doped with an additive by introducing an organic small molecule containing a sulfoxide group into the perovskite film. 2+ It can reduce the oxidation of the film and reduce the defect density of the film, optimize the carrier extraction and transmission, and improve the photoelectric conversion efficiency and stability of the battery device; the material cost is low and it is easy to implement in the process.

The invention discloses a preparation method and production equipment of a perovskite solar cell absorption layer. The production equipment comprises a workbench; the movable carrying device is mounted on the workbench in a sliding manner, and the movable carrying device is used for carrying and transporting a base; an inkjet printing device; the preparation method comprises the following steps of: taking formamidine tin iodide, cesium tin iodide and 6, 6-phenyl-C61-methyl butyrate as a precursor mixture, adding a solvent, and stirring to obtain a precursor solution; the method comprises the following steps: cleaning a substrate by using ultrasonic waves to remove surface stains, washing by using deionized water, and drying; coating the precursor solution obtained in the step S1 on the substrate obtained in the step S2 in an ink-jet printing manner; and S3, drying the coated substrate in the step S3 to remove moisture, and annealing to obtain the perovskite solar cell absorption layer. And the separation efficiency and the directional transmission capability of charges are improved, so that the photoelectric conversion efficiency of the perovskite solar cell is remarkably improved.

The invention discloses a high-frequency detection array plane based on near-infrared photosensitive core-shell nanowires and a preparation method of the high-frequency detection array plane, and belongs to the technical field of phototransistors. The detection array plane comprises a grid electrode, the upper end of the grid electrode is covered with an insulating layer, a source electrode and a drain electrode are arranged on the two sides of the upper end of the insulating layer respectively, and a core-shell nanowire PIN structure is further arranged at the upper end of the insulating layer and located between the source electrode and the drain electrode; the core-shell nanowire PIN structure comprises an inner layer ZnO nanowire arranged at the upper end of the insulating layer and used as an N-type layer; an intermediate layer PbSe two-dimensional nano fragment is arranged on the upper surface of the inner layer ZnO nanowire and is used as an intrinsic layer; the upper surface of the middle layer PbSe two-dimensional nanometer fragment is covered with an outer layer NiO thin film which is used as a P-type layer. The PIN structure is beneficial to formation of effective carrier separation and transmission at an interface, so that the photoelectric conversion efficiency of the device is improved; niO and ZnO are stable semiconductor materials and have good chemical stability and thermal stability.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

The invention relates to the technical field of solar cells, particularly provides a solar cell and a preparation method of the solar cell, and aims to solve the problem that the conversion efficiency of the solar cell is affected by parasitic absorption of polycrystalline silicon. To this end, the solar cell provided by the present application comprises: a substrate; the first silicon oxide layer is arranged on the first surface of the substrate; and the plurality of first polycrystalline silicon regions are arranged on one surface, far away from the substrate, of the first silicon oxide layer. According to a conventional passivation contact cell, silicon oxide and polycrystalline silicon are generally laid on the whole layer of the back face of the cell, the first silicon oxide layer is arranged on the back face of the substrate, and the multiple first polycrystalline silicon regions which are arranged at intervals are arranged on the first silicon oxide layer, so that the effect of reducing the area of the polycrystalline silicon regions in a conventional passivation contact structure is achieved; therefore, parasitic absorption caused by light absorption of the polycrystalline silicon is reduced, the purpose of improving the photocurrent density and the conversion efficiency of the cell is achieved, and the problem that the conversion efficiency of the solar cell is affected by the parasitic absorption of the polycrystalline silicon is solved.

The invention discloses a quantum dot detector preparation method based on a one-step synthesis method, and belongs to the technical field of infrared detectors. The method comprises the following steps: providing a substrate; preparing a bottom electrode on the substrate; preparing a hole transport layer on the bottom electrode, wherein the hole transport layer comprises a NiOx thin film and a PbS-EDT thin film; preparing a quantum dot light absorption layer on the hole transport layer by adopting a one-step synthesis method, wherein the quantum dot light absorption layer comprises 1550nm PbS CQD; preparing an electron transport layer on the quantum dot light absorption layer, wherein the electron transport layer comprises a C60 thin film and a thin film; and preparing a top electrode on the electron transport layer. According to the method, after the 1550nm PbS colloidal quantum dots are synthesized by adopting a thermal injection method, a quantum dot cleaning step is omitted, liquid phase exchange is directly carried out, water and oxygen introduction and ligand damage are avoided fundamentally, the process is simplified, meanwhile, the surface stability of the quantum dots is guaranteed, and the performance and large-scale production potential of an infrared detector are improved.

The application discloses a flexible perovskite solar cell based on an oleylamine chlorine passivation agent and a preparation method thereof, and relates to the technical field of solar cells. The solar cell comprises, from bottom to top, a flexible substrate, an electron transport layer, a perovskite light absorption layer, an oleylamine chlorine interface passivation layer, a hole transport layer and a gold electrode layer. In the preparation, after the perovskite light absorption layer is formed, an oleylamine chlorine solution is coated on the surface of the perovskite light absorption layer by using a low-temperature solution spin coating method, and the passivation layer is obtained through heating and drying. The chloride ions in the oleylamine chlorine molecules directly passivate uncoordinated defects on the surface of the perovskite, inhibit non-radiative recombination and optimize energy level matching. Meanwhile, the long-chain alkyl groups in the molecules construct a hydrophobic barrier layer to block the environmental water and oxygen erosion. Through simple interface engineering modification, the application improves the photoelectric conversion efficiency and environmental stability of the device, and the process is matched with the flexible substrate, which is beneficial to large-scale production.

The application discloses a kind of translucent perovskite solar cells and preparation method and application thereof.The translucent perovskite solar cell includes ITO conductive glass bottom electrode, NiO x Interface modification layer, 4PADCB hole transport layer, FA a Cs 1‑a PbI 3‑b Br b Perovskite absorption layer, PCBM-C 60 Electronic transport composite layer, Ag metal layer and ITO transparent top electrode;FA a Cs 1‑a PbI 3‑b Br b Perovskite absorption layer, 0 The battery of the application keeps higher transmission level in red light band, and retains certain transmission level in blue light band, while enhancing absorption and utilization of yellow-green light band, and can better match crop light utilization characteristics.

The invention provides a back contact solar cell and a preparation method and application thereof. The back contact solar cell comprises a silicon substrate, the silicon substrate comprises a front face and a back face which are opposite, and the front face is of a textured structure; in the first direction, the back surface comprises first type regions and second type regions which are alternately arranged, and the adjacent first type regions and second type regions are spaced by spacer regions; the surface of the silicon substrate corresponding to the first type region, the second type region and the spacer region is of a planar structure; the first type region comprises a first dielectric layer, a first doping layer, a first passivation layer and a first antireflection layer; the second type region comprises a second dielectric layer, a second doping layer, a second passivation layer and a second antireflection layer; the front surface is provided with a front surface floating emitter, and the back surface is provided with a metal electrode. According to the invention, the optical secondary internal refraction of the back surface is fully utilized, the recombination loss caused by the minority carrier transverse transmission process is reduced, and the electric shielding influence is reduced.

The invention provides a preparation process of an efficient crystalline silicon solar cell, and belongs to the technical field of solar cells. Comprising the following steps: texturing and carrying out front boron diffusion; preparing a tunneling oxide layer and a polycrystalline silicon layer; preparing a double-layer coated silicon wafer; preparing binary complex solid powder; preparing a doped antireflection film; and preparing a metal electrode. The preparation method comprises the following steps: dissolving europium oxide in concentrated hydrochloric acid to prepare a mixed chloride, dissolving the mixed chloride in ethanol, carrying out a series of reactions to prepare binary complex solid powder, adding the binary complex solid powder into silicon dioxide sol, and carrying out dip coating on a double-layer coated silicon wafer to obtain the europium-doped silicon wafer. After the doped anti-reflection passivation films are formed on the front and back surfaces, the doped anti-reflection passivation films can convert ultraviolet light which is difficult to absorb by the crystalline silicon solar cell into visible light with good spectral response, so that the light absorption efficiency of the solar cell is improved, and the effect of improving the conversion efficiency of the crystalline silicon solar cell is achieved.