62results about How to "Reduce compound loss" patented technology

The embodiment of the invention provides a solar cell. The solar cell comprises a substrate; the emitting electrode, the first passivation film, the anti-reflection film and the first electrode are sequentially stacked on the upper surface of the substrate; the tunneling layer, the blocking layer, the field passivation layer, the second passivation film and the second electrode are sequentially stacked on the lower surface of the substrate, the blocking layer is used for blocking doping ions in the field passivation layer from migrating to the substrate, the blocking layer comprises a first blocking layer coinciding with the projection of the second electrode and a second blocking layer with the projection staggered, and at least the second blocking layer is an intrinsic semiconductor; in the direction perpendicular to the surface of the substrate, the thickness of the first blocking layer is smaller than that of the second blocking layer, the surface, away from the substrate, of the first blocking layer is flush with the surface, away from the substrate, of the second blocking layer, and the thickness of the tunneling layer coinciding with the projection of the second electrode is larger than that of the tunneling layer staggered with the projection of the second electrode. The embodiment of the invention is beneficial to reducing the recombination loss of the solar cell and improving the conversion efficiency of the solar cell.

The invention discloses a back passivation crystal silicon solar battery and a preparation method thereof. An ultra-thin aluminum oxide and high-power function transition metal oxide laminated passivation film is formed on the back surface of the solar battery back passivation crystal silicon solar battery, and is arranged between p type crystal silicon and a back electrode; ultra-thin aluminum oxide and high-power function transition metal oxide laminated films are used for passivating and contacting the back surface of the p type crystal silicon. The preparation method comprises the following steps that an atom layer deposition method is used for preparing an ultra-thin aluminum oxide layer; a metal oxide layer is prepared by a heat evaporation method or a plasma enhanced atom layer deposition method. The back passivation crystal silicon solar battery and the preparation method have the advantages that the back surface light loss and the current carrier composite loss can be reduced, so that the photoelectric conversion efficiency of the battery can be improved; meanwhile, the electron hole collection and transmission can be realized through ultra-thin aluminum oxide and high-power function transition metal oxide lamination; the preparation obtianign can be realized only through atom layer deposition and heat evaporation film plating process; the further use of laser hole forming process with high process difficulty and high required equipment cost can be avoided.