9results about How to "Reduce compound loss" patented technology

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

The invention discloses a cell panel with a selective phosphorus doping structure and a preparation method thereof, and relates to the technical field of solar cells, the cell panel comprises a substrate, the front surface of the substrate is sequentially provided with a P + emitter layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer, an aluminum oxide passivation layer and a silicon nitride anti-reflection layer are sequentially arranged on the reverse side; wherein a selective phosphorus heavily-doped region is arranged in the phosphorus-doped polycrystalline silicon layer, and the phosphorus content in the selective phosphorus heavily-doped region is greater than that in the phosphorus-doped polycrystalline silicon layer, so that a region which needs to form low-resistance ohmic contact with a metal electrode has higher carrier concentration; the contact resistance between the metal electrode and the phosphorus-doped polycrystalline silicon layer is reduced, and efficient collection of photon-generated carriers is facilitated; the main body region of the phosphorus-doped polycrystalline silicon layer keeps relatively low phosphorus concentration, thereby effectively preventing excessive phosphorus from diffusing to the aluminum oxide passivation layer to weaken the passivation effect, and further reducing the carrier recombination loss.

This invention discloses a battery electrode and a method for preparing a battery cell, a photovoltaic cell, a tandem cell, and a photovoltaic module, belonging to the field of solar cell technology. The battery electrode of this invention is located on the light-receiving surface and the back-light-receiving surface of the battery cell, including multiple main grids extending longitudinally and multiple fine grids extending laterally. The main grids and fine grids intersect to form a grid and are interconnected. A groove structure matching the fine grids is provided on the light-receiving surface or both sides of the battery cell. The fine grids are embedded inside the grooves, and the fine grids directly contact the boron-doped layer of the battery cell on three sides without passivation film obstruction. This invention can significantly reduce contact resistance, improve light blocking, and facilitate efficient photoelectric conversion. This electrode structure can be superimposed with any battery structure, such as xBC, HJT, perovskite tandem cells, etc.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

The invention discloses a quantum dot detector preparation method based on a one-step synthesis method, and belongs to the technical field of infrared detectors. The method comprises the following steps: providing a substrate; preparing a bottom electrode on the substrate; preparing a hole transport layer on the bottom electrode, wherein the hole transport layer comprises a NiOx thin film and a PbS-EDT thin film; preparing a quantum dot light absorption layer on the hole transport layer by adopting a one-step synthesis method, wherein the quantum dot light absorption layer comprises 1550nm PbS CQD; preparing an electron transport layer on the quantum dot light absorption layer, wherein the electron transport layer comprises a C60 thin film and a thin film; and preparing a top electrode on the electron transport layer. According to the method, after the 1550nm PbS colloidal quantum dots are synthesized by adopting a thermal injection method, a quantum dot cleaning step is omitted, liquid phase exchange is directly carried out, water and oxygen introduction and ligand damage are avoided fundamentally, the process is simplified, meanwhile, the surface stability of the quantum dots is guaranteed, and the performance and large-scale production potential of an infrared detector are improved.

The application discloses a flexible perovskite solar cell based on an oleylamine chlorine passivation agent and a preparation method thereof, and relates to the technical field of solar cells. The solar cell comprises, from bottom to top, a flexible substrate, an electron transport layer, a perovskite light absorption layer, an oleylamine chlorine interface passivation layer, a hole transport layer and a gold electrode layer. In the preparation, after the perovskite light absorption layer is formed, an oleylamine chlorine solution is coated on the surface of the perovskite light absorption layer by using a low-temperature solution spin coating method, and the passivation layer is obtained through heating and drying. The chloride ions in the oleylamine chlorine molecules directly passivate uncoordinated defects on the surface of the perovskite, inhibit non-radiative recombination and optimize energy level matching. Meanwhile, the long-chain alkyl groups in the molecules construct a hydrophobic barrier layer to block the environmental water and oxygen erosion. Through simple interface engineering modification, the application improves the photoelectric conversion efficiency and environmental stability of the device, and the process is matched with the flexible substrate, which is beneficial to large-scale production.

The application discloses a kind of translucent perovskite solar cells and preparation method and application thereof.The translucent perovskite solar cell includes ITO conductive glass bottom electrode, NiO x Interface modification layer, 4PADCB hole transport layer, FA a Cs 1‑a PbI 3‑b Br b Perovskite absorption layer, PCBM-C 60 Electronic transport composite layer, Ag metal layer and ITO transparent top electrode;FA a Cs 1‑a PbI 3‑b Br b Perovskite absorption layer, 0 The battery of the application keeps higher transmission level in red light band, and retains certain transmission level in blue light band, while enhancing absorption and utilization of yellow-green light band, and can better match crop light utilization characteristics.

The invention provides a back contact solar cell and a preparation method and application thereof. The back contact solar cell comprises a silicon substrate, the silicon substrate comprises a front face and a back face which are opposite, and the front face is of a textured structure; in the first direction, the back surface comprises first type regions and second type regions which are alternately arranged, and the adjacent first type regions and second type regions are spaced by spacer regions; the surface of the silicon substrate corresponding to the first type region, the second type region and the spacer region is of a planar structure; the first type region comprises a first dielectric layer, a first doping layer, a first passivation layer and a first antireflection layer; the second type region comprises a second dielectric layer, a second doping layer, a second passivation layer and a second antireflection layer; the front surface is provided with a front surface floating emitter, and the back surface is provided with a metal electrode. According to the invention, the optical secondary internal refraction of the back surface is fully utilized, the recombination loss caused by the minority carrier transverse transmission process is reduced, and the electric shielding influence is reduced.