Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for carrying out phosphorus diffusion on silicon wafer, product and solar cell

A phosphorus diffusion and silicon wafer technology, applied in the field of solar cells, can solve problems such as large-sized silicon wafers that cannot adapt to solar cells, and achieve the effects of satisfying diffusion uniformity, improving minority carrier lifetime, and improving conversion efficiency.

Active Publication Date: 2021-07-16
HENGDIAN GRP DMEGC MAGNETICS CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above-mentioned solutions all have the problem of being unable to adapt to large-size silicon wafers used for solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] In this embodiment, phosphorus is diffused on the silicon wafer according to the following method:

[0083] (1) The diffusion furnace tube first passes through the boat (the quartz boat with the silicon chip placed in the reactor, the area of ​​the silicon chip is 252cm 2 ), vacuuming and leak detection preparation steps, and the prerequisites for keeping the furnace tube clean, constant pressure, and constant temperature.

[0084] (2) For pre-oxidation, the oxygen flow rate is 600 sccm, the time is 6 minutes, the furnace temperature rises slowly and is maintained at 785°C.

[0085] (3) The first time the source is turned on, the flow rate of nitrogen gas carrying phosphorus oxychloride is 700 sccm, the time is 2 minutes, and the preset temperature from the furnace mouth to the furnace tail is maintained at 785 ° C.

[0086] (4) For the second power supply, the flow rate of nitrogen gas carrying phosphorus oxychloride is 700 sccm, the time is 2 minutes, and the preset ...

Embodiment 2

[0095]In this embodiment, phosphorus is diffused on the silicon wafer according to the following method:

[0096] (1) Diffusion furnace tube first needs to pass through the boat (place the quartz boat with silicon wafer in the reactor, the area of ​​silicon wafer is 255cm 2 ), vacuuming and leak detection preparation steps, and the prerequisites for keeping the furnace tube clean, constant pressure, and constant temperature.

[0097] (2) For pre-oxidation, the oxygen flow rate is 500 sccm, the time is 7 minutes, the furnace temperature rises slowly and is maintained at 780°C.

[0098] (3) The first time the source is turned on, the flow rate of nitrogen gas carrying phosphorus oxychloride is 600 sccm, the time is 3 minutes, and the preset temperature from the furnace mouth to the furnace tail is maintained at 780 ° C.

[0099] (4) For the second power supply, the flow rate of nitrogen gas carrying phosphorus oxychloride is 600 sccm, the time is 3 minutes, and the preset tempe...

Embodiment 3

[0107] In this embodiment, phosphorus is diffused on the silicon wafer according to the following method:

[0108] (1) The diffusion furnace tube first needs to pass through the boat (the quartz boat with the silicon chip placed in the reactor, the area of ​​the silicon chip is 252cm 2 Above), vacuuming and leak detection preparation steps, the prerequisites for keeping the furnace tube clean, constant pressure, and constant temperature.

[0109] (2) Pre-oxidation, the oxygen flow rate is 700sccm, the time is 5min, the furnace temperature rises slowly and maintains at 790°C.

[0110] (3) The first time the source is turned on, the flow rate of nitrogen gas carrying phosphorus oxychloride is 800 sccm, the time is 1 min, and the preset temperature from the furnace mouth to the furnace tail is maintained at 790 ° C.

[0111] (4) For the second power supply, the flow rate of nitrogen gas carrying phosphorus oxychloride is 800 sccm, the time is 1 min, and the preset temperature fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for carrying out phosphorus diffusion on a silicon wafer, a product and a solar cell. The method comprises the following steps of: 1) placing a silicon wafer in a container, placing the container in a reactor, introducing an oxidizing atmosphere, and heating the reactor; 2) introducing a gas containing a phosphorus source into the reactor for the first time, and then introducing the gas containing the phosphorus source into the reactor for the second time; 3) raising the temperature of the reactor, carrying out first propulsion, and then carrying out second propulsion; 4) cooling the reactor, introducing the gas containing the phosphorus source for the third time, then cooling again, and introducing the gas containing the phosphorus source for the fourth time; and 5) introducing an oxidizing atmosphere to obtain a silicon wafer with diffused phosphorus. According to the phosphorus diffusion method provided by the invention, the diffusion sheet resistance and uniformity are improved, so that the conversion efficiency of a large-size solar cell is improved.

Description

technical field [0001] The technical field of solar cells of the present invention relates to a method for performing phosphorous diffusion on silicon wafers and its products and solar cells. Background technique [0002] The demands of the photovoltaic market place higher and higher demands on solar cells. In order for photovoltaic enterprises to be competitive in the market, efficiency improvement and cost reduction are the goals that need to be achieved all the time. The driving force for increasing the size of silicon wafers is to increase premiums, dilute costs, and expand profit margins. In these aspects, M10 / G12 has more advantages than the existing G1 / M6. There are two main points: 1) Compared with the M6 ​​silicon wafer, its area gain is 40% / 60%, and the power of the corresponding 60-type module is increased by about 80W / 230W. In the construction of power stations, the use of large-size silicon wafers and high-power components can reduce the cost of brackets, comb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223H01L31/18H01L31/028
CPCH01L21/223H01L31/1804H01L31/028Y02P70/50Y02E10/547
Inventor 李跃何悦宋飞飞贾松燕赵颖
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com