Method for preparing n-type crystalline silica double-side solar cell

Abstract

The invention discloses a method for preparing n-type crystalline silica double-side solar cell, and the method comprises the steps of texturing a silicon chip surface and cleaning; depositing a silicon oxide film where boron is heavily doped on the side that demands boron diffusion through CVD method or PVD method, and the thickness is 20-200nm; depositing an oxide film where phosphor is heavily doped on the side that demands phosphor diffusion through the CVD method or PVD method, and the thickness is 20-200nm; performing high temperature diffusion at a normal pressure in clean air atmosphere or oxygen atmosphere to obtain a doped n-type layer and a doped p-type layer at the same time; removing and cleaning by a wet chemical method of a silicon chip double-side oxide; depositing a silicon chip double-side passivation antireflection coating; preparing a silicon chip double-side grid line electrode; and processing anti-creeping treatment to the silicon chip edge. The diffusion technology is relatively simple; the doped concentration of the doping layer is accurate and controllable; the dying problem of the surface due to over high density can be avoided; and the square resistance of the obtained doping layer is distributed evenly. The prepared n-type crystalline silica double-side solar cell has an excellent performance, and the manufacture cost is low.

Description

technical field [0001] The invention relates to a method for preparing n-type crystalline silicon double-sided solar cells, which belongs to the field of solar cells and also belongs to the field of semiconductor devices. It involves the preparation technology of solar cells. Background technique [0002] N-type crystalline silicon bifacial cells have attracted increasing attention because of their high conversion efficiency, no light-induced attenuation, and the ability to enter light from both sides to further improve the photoelectric conversion efficiency of solar cells. According to the composition of the pn junction material, its device structure is divided into two categories: crystalline silicon / crystalline silicon homojunction and amorphous silicon / crystalline silicon heterojunction solar cells. Among them, the production technology route of the former is mostly the same as the production line equipment used in the existing p-type crystalline silicon solar cell tec...

AI Technical Summary

Problems solved by technology

At present, the combination of ion implantation on one side and diffusion on the other is generally used to obtain double-sided heavily doped crystalline silicon layers, because if the diffusion method is used on both sides, the existing technical solutions will cause the mutual influence of the two-layer structure during the diffusion process, resulting in negative results.

However, the solution of ion implantation and diffusion at the same time is still not perfect

After ion implantation, high-temperature heat treatment is required to restore the damaged crystal lattice, but this process will cause changes in the properties of silicon wafers. In addition, the cost of this technology is still too high; the square resistance distribution of the diffusion layer obtained by the commonly used tubular diffusion method is uniform Poor sex