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Heterojunction solar cell and preparation method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of lowering the crystalline quality of materials, unfavorable carrier transport, lowering the efficiency of solar cells, etc., so as to improve photoelectric performance and efficiency, and reduce carrier recombination. Loss, the effect of lowering the barrier height

Inactive Publication Date: 2012-10-10
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

like figure 1 , Figure 2A , Figure 2B , Figure 2C and Figure 2D As shown, according to this method, during the growth process of the active region 202, a material with a large difference in lattice constant between the N-type layer and the P-type layer is directly grown. Due to the high degree of lattice mismatch, the stress release during the growth process There will be a large number of misfit dislocations, such as Figure 2C As shown by the dislocation 208 in , which reduces the crystalline quality of the material and thus affects the performance of the solar cell
At the same time, due to the large material difference between the active region and the N-type and P-type layers, the contact barrier is relatively high, such as the simplified energy band structure diagram of a traditional mismatch system solar cell, that is Figure 5A As shown, this is not conducive to the transport of carriers, which will reduce the efficiency of solar cells

Method used

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  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof

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no. 1 Embodiment

[0027] This specific embodiment provides a heterojunction solar cell with a structure such as Figure 4E As shown, it includes a first film 403 with a first conductivity type, and a first graded buffer layer 408, an active region 402, a second graded buffer layer 409 and a layer with For the second thin film 401 of the second conductivity type, the first graded buffer layer 408 is heterogeneous to the first thin film 403 , and the second graded buffer layer 409 is heterogeneous to the second thin film 401 . The first graded buffer layer 408, the active region 402, and the second graded buffer layer 409 are sequentially grown between the first thin film 403 and the second thin film 401, respectively reducing the distance between the first thin film 403 and the active region 402 and the second The barrier height between the thin film 401 and the active region 402 improves the carrier transport efficiency compared with traditional solar cells.

[0028] The above-mentioned...

no. 2 Embodiment

[0039] image 3 Shown is the method flowchart of the second specific embodiment of the method for manufacturing a heterojunction solar cell.

[0040] Figures 4A to 4E Shown is a flow chart of the process steps of the second specific embodiment of the preparation of the heterojunction solar cell.

[0041] This specific embodiment provides a method for preparing a heterojunction solar cell as described in the first specific embodiment, including steps:

[0042] Step 300, growing a first graded buffer layer heterogeneous to the first film on the exposed surface of the first film;

[0043] Step 301, epitaxially growing an active region on the exposed surface of the first graded buffer layer;

[0044] Step 302, growing a second graded buffer layer on the exposed surface of the active region;

[0045] Step 303 , growing a second thin film layer heterogeneous to that of the second graded buffer layer on the exposed surface of the second graded buffer layer, and the conductivity ty...

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Abstract

The invention provides a heterojunction solar cell. The heterojunction solar cell comprises a first thin film provided with a first electric conduction type, an active area, and a second thin film provided with a second electric conduction type, wherein the active area and the second thin film are sequentially arranged on the surface of the first thin film; a first gradual change buffer layer which is heterogeneous with the first thin film is further arranged between the first thin film and the active area, and a second gradual change buffer layer which is heterogeneous with the second thin film is further arranged between the second thin film and the active area. The invention further provides a preparation method of the heterojunction solar cell, which comprises the following steps: 1), growing the first gradual change buffer layer heterogeneous with the first thin film on the exposed surface of the first thin film; 2), growing the active area epitaxially on the exposed surface of the first gradual change buffer layer; 3), growing the second gradual change buffer layer on the exposed surface of the active area; and 4), growing a second thin film layer heterogeneous with the second gradual change buffer layer on the exposed surface of the second gradual change buffer layer, and the electric conduction types of the first thin film and the second thin film are opposite.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a heterojunction solar cell and a preparation method thereof. Background technique [0002] With the aggravation of environmental pollution and energy crisis, people are full of expectations for the utilization of new energy sources (especially solar cells based on completely harmless sunlight). Some solar cell materials are affected by doping and composition, and using their heterostructures can avoid the above problems, so P-N or P-I-N solar cells containing such heterostructures are getting more and more attention. When using a heterojunction, due to the problem of lattice mismatch, not only there are too many lattice defects in the conventionally grown material, but also the potential barrier of the heterojunction will hinder the transport and collection of carriers, which is not conducive to improving The efficiency of solar cells. In view of this, solar cells based on gradient ...

Claims

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Application Information

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IPC IPC(8): H01L31/0735H01L31/0224H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 吴渊渊郑新和张东炎李雪飞陆书龙杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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