Full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as poor thermal stability, poor device performance, weak p-type, etc., to achieve structural optimization, high long-term working stability, composite reduced effect

Active Publication Date: 2020-06-05
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The aluminum-doped zinc oxide and antimony selenide films can prevent the degradation of the perovskite active layer, improve the stability and prolong the service life of perovskite thin-film solar cells, but the perovskite used in the invention is an organic- Inorganic hybrid materials have problems such as volatility and poor thermal stability, and the antimony selenide thin film used has not undergone any optimization treatment. On the one hand, the intrinsic p-type is weak, and on the other hand, surface vacancy defects may become carrier recombination. center, resulting in poor device performance

Method used

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  • Full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and preparation method thereof
  • Full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and preparation method thereof
  • Full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] A method for preparing an all-inorganic P / N heterojunction antimony selenide / perovskite solar cell, comprising the steps of:

[0045] (1) Part of the area on one side of the FTO conductive glass is etched. The etching method is as follows: add dilute hydrochloric acid with a concentration of 2mol / L at room temperature to the surface of the FTO glass covered with half the area of ​​zinc powder, and the etching is completed after 10 minutes of reaction. Corrosion to prevent short circuit; then ultrasonically cleaned with detergent, ultrapure water, acetone and ethanol at room temperature for 20 minutes, dried and placed in a UV-ozone processor for 20 minutes at room temperature to prepare a local conductive film with a thickness of 150nm FTO conductive glass substrate.

[0046] (2) Using 2ml of absolute ethanol as a solvent, add 254 μl of titanium isopropanol and 34 μl of 2mol / L dilute hydrochloric acid to it, and mix evenly to prepare a titanium dioxide precursor solutio...

Embodiment 2

[0055] A preparation method of an all-inorganic P / N heterojunction antimony selenide / perovskite solar cell, as described in Example 1, the difference is:

[0056] The metal counter electrode layer is an Au layer; the preparation method is as follows: the sample is placed in a vacuum thermal evaporation chamber, and the air pressure in the evaporation chamber is lower than 1*10 -4 At Pa, start to heat up the solid particle Au at a heating rate of 8°C / min until the metal boils, Au evaporates and deposits on the selenized Sb 2 Se 3 layer, an Au metal counter electrode layer with a thickness of 50nm was obtained, and finally an all-inorganic P / N heterojunction antimony selenide / perovskite solar cell was obtained; other steps and conditions were consistent with those in Example 1.

Embodiment 3

[0058] A preparation method of an all-inorganic P / N heterojunction antimony selenide / perovskite solar cell, as described in Example 1, the difference is:

[0059] Step (3), inorganic CsPbBrI 2 The preparation method of the perovskite layer is changed from the spin coating method to the vacuum thermal evaporation method, and the preparation method is as follows: the raw materials CsBr and PbI 2 Put 0.6mmol each into two evaporating quartz crucibles, and the air pressure in the evaporation chamber is lower than 1*10 -4 At Pa, heat up to 250°C at a heating rate of 10°C / min, solid powder PbI 2 Evaporated and deposited on TiO layer; PbI 2 After evaporation, the temperature was raised to 500°C at a rate of 10°C / min. The solid powder CsBr evaporated and continued to deposit. After evaporation, it was taken out and annealed at 150°C for 15 minutes in a nitrogen atmosphere to obtain a perovskite layer with a thickness of 250nm. Other steps and conditions are consistent with Example ...

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Abstract

The invention provides a full-inorganic P/N heterojunction antimony selenide/perovskite solar cell and a preparation method thereof. The solar cell comprises an FTO conductive glass substrate, a titanium dioxide (TiO<2>) layer, an inorganic CsPbBrI<2> perovskite layer, a selenized Sb<2>Se<3> layer and a metal counter electrode layer which are sequentially arranged from bottom to top. According tothe invention, the Sb<2>Se<3> is selenized to prepare the selenized Sb<2>Se<3> layer, and the inorganic CsPbBrI<2> perovskite layer and the selenized Sb<2>Se<3> layer are compounded into the heterojunction to prepare the full-inorganic P/N heterojunction antimony selenide/perovskite solar cell. The photoelectric conversion efficiency of the prepared solar cell is greatly improved, and the solar cell has good long-term working stability.

Description

technical field [0001] The invention relates to an all-inorganic P / N heterojunction antimony selenide / perovskite solar cell and a preparation method thereof, belonging to the technical field of material synthesis and photoelectric conversion. Background technique [0002] In recent years, inorganic lead halide perovskite materials have become one of the research hotspots in the field of photovoltaics due to their advantages such as large light absorption coefficient, adjustable band structure, simple preparation method, long carrier lifetime and high thermal stability. However, the current device life of inorganic perovskite solar cells cannot meet the requirements of practical applications (20 years). 2,2',7,7'-Tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, whose hydrophilicity will lead to the degradation, which greatly shortens the life of the device. To solve the problem of poor performance stability caused by the hole transport layer in formally structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L31/0216H01L31/18
CPCH01L31/02167H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 尹龙卫付琳
Owner SHANDONG UNIV
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