Photovoltaic cell and its preparation method, photovoltaic module

Abstract

The embodiment of the present application relates to the field of solar energy, and provides a photovoltaic cell and its preparation method, and a photovoltaic module. The method includes: providing a substrate; sequentially forming an emitter and a doping source layer on the surface of the substrate. Doping elements: using a laser to process a local region of the doping source layer to sequentially form a first doping region and a damaged region in the emitter corresponding to the local region and the substrate, the first doping region has a doping element; removing the doped source layer and the damaged region; forming a passivation layer on the surface of the first doped region and the emitter; forming a doped electrode with doping elements on the side of the passivation layer away from the emitter; sintering the doped electrode to form The electrode of the passivation layer is penetrated, and a second doping region is formed between the electrode and the first doping region, and the concentration of doping elements in the second doping region is higher than that in the first doping region. The embodiments of the present application are at least beneficial to improving the photoelectric conversion efficiency of the photovoltaic cell.

Description

technical field [0001] The embodiments of the present application relate to the field of solar energy, and in particular to a photovoltaic cell, a preparation method thereof, and a photovoltaic module. Background technique [0002] A photovoltaic cell is a semiconductor device that converts solar energy into electricity. Due to the need to have a good ohmic contact between the electrode and the emitter, as well as to improve the spectral response in the short-wave band at the sunlight incident site, more and more manufacturers have begun to apply selective emitter photovoltaic cells. [0003] The main feature of selective emitter photovoltaic cells is high doping concentration in the electrode area and low doping concentration in the illuminated area. The purpose is to improve the passivation quality of the silicon wafer surface without reducing the contact quality between the electrode and the semiconductor material and reduce the The surface recombination and the recombin...

AI Technical Summary

Problems solved by technology

However, due to the influence of the doping process, the recombination damage in some regions of the selectively doped structure is relatively large, which affects the photoelectric conversion efficiency of photovoltaic cells.

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