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452 results about "Shadowings" patented technology

Method and system for automatically maintaining data consistency across various databases

A method and system for automatically maintaining data consistency across two or more hierarchically arranged databases is disclosed. A master list and an environmental variable file are created for use in maintaining the data consistency of a cell view. A cell view in a selected database is then checked to see if it has been modified by performing date-time stamp shadowing. If the cell view is modified, the cell view is then retrieved by derivative lists created from the master list and the environmental variable file and translated based on criteria from the environmental variable file. Verification is then performed on the translated cell view once again based on criteria from the environmental variable file. This verification creates a signature for the translated cell view. Signatures are then checked for being out of date with respect to any dependency listing contained internally. Any signature found to be out of date triggers an automatic re-verification of the pertinent data file. The translated and verified cell view is then checked to see if it or any of its dependencies have been altered by performing an audit based on criteria from the environmental variable file using the signature. The translated and verified cell view is then promoted to a higher quality database based on the results of the audit.
Owner:IBM CORP

Asymmetrical IGFET devices with spacers formed by HDP techniques

In an IGFET device having at least one source/drain region with a lightly-doped sub-region proximate a channel region, the source/drain regions are formed by first implanting ions with parameters to form lightly-doped source/drain regions. A high density plasma deposition provides at least one spacer having preselected characteristics. As a result of the spacer characteristics, an ion implantation with parameters to form normally-doped source/drain regions is shadowed by the spacer. A portion of the source/drain region shadowed by the spacer results in a lightly-doped source/drain sub-region proximate the channel region. According to a second embodiment of the invention, the ion implantation resulting in the lightly-doped source/drain regions is eliminated. Instead, the spacer(s) formed by the high density plasma deposition and subsequent etching process only partially shadows the ion implantation that would otherwise result in normal doping of the source/drain regions. The parameters of the spacer(s) resulting from the high density plasma deposition and subsequent etching process result in a lightly-doped source/drain sub-region proximate the channel region. The shadowing of the spacer decreases with distance from the gate structure and results in a normal doping level for the portion of the source/drain terminal not shadowed by the spacer.
Owner:GLOBALFOUNDRIES INC
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