The invention discloses a polycrystalline silicon ingot and a casting method thereof, and applies to an ingot furnace which is provided with a top heater, and a thermal insulation bottom plate is arranged at the bottom periphery of a heat radiation platform. The casting method comprises the following steps of: loading a silicon material in a crucible, and heating the silicon material to a molten state; reducing the power of the top heater on the polysilicon ingot furnace, simultaneously opening a shutter to the angle of 25 degrees to 35 degrees gradually, and reducing the surface temperature of a silicone fluid in the molten state to 1400 DEG C-1450 DEG C so that the silicone fluid at the bottom starts crystallizing; continuing gradually opening the shutter to the maximum opening vertical angle, and keeping a stable silicone fluid crystallization rate, wherein the opening speed rate of the shutter is less than the opening speed rate of the shutter in the second step, and the opening speed rate of the shutter is gradually reduced; and maintaining the maximum opening of the shutter until crystallization is finished. The polycrystalline silicon ingot and the casting method thereof provided by the invention solve the problem that the peripheral impurities of the silicon ingot are distributed in a scattering manner through changing a oriented polycrystalline silicon crystallizing process, the property of the polycrystalline silicon ingot is improved, the polycrystalline silicon ingot with good quality and high compound output rate is prepared, the utilization ratio of the silicon material is improved, and the manufacturing cost of the silicon ingot is reduced.