352 results about "Crystallization rate" patented technology

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, and a photovoltaic module, the back contact battery comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite to each other along a first direction, and the second surface is provided with first regions and second regions which are alternately arranged along a second direction; the first dielectric layer and the first doping layer are stacked on the first region, and P-type doping elements are arranged in the first doping layer; the second dielectric layer and the second doping layer are stacked on the second region, and the second doping layer is provided with N-type doping elements; wherein the first doped layer comprises N layers of stacked first doped films, the crystallization rate of the (N-1) th layer of first doped film is higher than the crystallization rate of the Nth layer of first doped film in the direction away from the substrate, and N is a positive integer greater than or equal to 2. The embodiment of the invention is at least beneficial to improving the photoelectric conversion efficiency of the back contact battery.

A method for separating amoxicillin and phenylacetic acid from reaction solution in one-step enzymatic synthesis of amoxicillin is provided. The method employs immobilized penicillin acylase mutant to catalyze the one-step synthesis of amoxicillin from penicillin potassium, and develops a separation process for the resulting reaction mixture. The technical scheme mainly comprises: Firstly separating the immobilized penicillin acylase mutant from the reaction solution through filtration; subsequently isolating amoxicillin via crystallization; followed by separating and recovering phenylacetic acid through toluene extraction and back extraction. This separation method enables rapid and efficient isolation of amoxicillin with high production yield, achieving an average crystallization rate of 93.22%. Concurrently, it demonstrates effective separation and recovery of phenylacetic acid while allowing recyclable use of the toluene extractant.

The invention relates to a preparation method of a solar cell piece and the solar cell piece, and the preparation method of the solar cell piece comprises the following steps: preparing a tunneling oxide layer on the surface of an n-type crystalline silicon substrate, depositing polycrystalline silicon on the surface of the tunneling oxide layer under a first condition, and forming a first polycrystalline silicon layer, polycrystalline silicon is deposited on the surface of the first polycrystalline silicon layer under a second condition to form a second polycrystalline silicon layer, the temperature T1 of the first condition is larger than the temperature T2 of the second condition, the crystallization rate in the first polycrystalline silicon layer is smaller than the crystallization rate in the second polycrystalline silicon layer, annealing treatment and boron diffusion are carried out on the first polycrystalline silicon layer and the second polycrystalline silicon layer under the same condition, and the polycrystalline silicon layer is formed. The first polycrystalline silicon layer is converted into a first doped polycrystalline silicon layer, the second polycrystalline silicon layer is converted into a second doped polycrystalline silicon layer, the ratio F of the concentration of the first doped polycrystalline silicon layer to the concentration of the second doped polycrystalline silicon layer is larger than or equal to 0.01 and smaller than or equal to 0.1, the boron doping concentration in the first doped polycrystalline silicon layer in direct contact with the tunneling oxide layer is reduced, and the passivation level is improved.

The invention belongs to the technical field of 3D printing materials, and particularly relates to an interlayer reinforced composite material, a preparation method thereof and application of the interlayer reinforced composite material as a 3D printing material. A copolymerization group is introduced into polyaryletherketone, so that polyaryletherketone has a unique molecular structure and can compete with folding of an ether ketone chain segment in the crystallization process, in this way, in-situ copolymerization polyaryletherketone has a lower crystallization rate compared with polyether-ether-ketone or a polyether ketone system, the healing time of adjacent fused filaments of a 3D printing product is prolonged, and the 3D printing quality is improved. Compared with a conventional 3D printing material, the 3D printing material has the advantages that the interlayer strength is effectively improved and the interlayer reinforcing effect is achieved due to the long healing time, the interlayer performance of a 3D printing product obtained by using the 3D printing material is good, the tensile strength is 120-130 MPa, the interlayer tensile strength is 20-30 MPa, and the application range is wider. The interlayer reinforced composite material provided by the invention has the advantages of lower melting point, favorable processability, favorable mechanical properties, favorable high-temperature resistance and excellent comprehensive properties.

The invention belongs to the technical field of pipe manufacturing, and particularly relates to a manufacturing method of a surface-traceless water supply steel wire mesh reinforced polyethylene composite pipeline, which comprises the following steps: core layer extrusion molding, core layer vacuum cooling shaping, steel wire winding, outer layer PE raw material covering, internal pressure sizing and gradient cooling, code spraying, cutting and sealing. The gradient cooling is divided into three stages of cooling, the first stage is pre-cooling shaping and warm water spraying pre-cooling, shock cooling hardening of the surface of a melt is avoided, meanwhile, internal pressure sizing is conducted on the pipe, the pipe wall is made to be tightly attached to a sizing sleeve through internal air pressure, and concave-convex marks of the steel wire mesh composite pipe are eliminated; gradient cooling is adopted in the second stage, multi-stage water tank segmented cooling is adopted, and the temperature of each stage of water tank is adjusted; and the third stage is post-cooling treatment, low-temperature aerial fog cooling is adopted to further eliminate internal thermal stress, and the temperatures of the first stage, the second stage and the third stage are gradually reduced. The melt flow stress can be eliminated, the crystallization rate is controlled, the internal thermal stress is eliminated, and the pipe quality is ensured.

The invention relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure, a preparation method thereof and application of the selective passivation contact structure to preparation of a selective TOPCon cell. The method comprises the steps that a first tunneling oxide layer, first thin intrinsic amorphous silicon with the high crystallization rate and second thick intrinsic amorphous silicon with the low crystallization rate are sequentially prepared on the back face of a silicon wafer; boron diffusion doping is carried out, so that the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon have difference in doping concentration and crystallization rate; in the alkali etching process after laser patterning, first boron-doped polycrystalline silicon and a first tunneling oxide layer in a back non-electrode contact area are reserved by utilizing the etching rate difference of an alkaline solution on BSG and two layers of boron-doped polycrystalline silicon with different doping concentrations and crystallization rates; and the first tunneling oxide layer, the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon in the back electrode contact region are reserved. According to the method, the process steps can be simplified, parasitic absorption and recombination are reduced, passivation and transverse transmission are improved, and the cell efficiency is improved.

The invention discloses a method for selectively and efficiently removing impurities in desulfurized gypsum and preparing high-quality alpha-semi-hydrated gypsum, which comprises the following steps: (1) removing organic impurities in the desulfurized gypsum by utilizing flotation, then removing soluble impurities by washing, and aerating air to oxidize calcium sulfite into calcium sulfate dihydrate while washing, then carrying out acid leaching in a hydrochloric acid solution to remove insoluble impurities, taking out and drying to obtain treated desulfurized gypsum; and (2) adding the desulfurized gypsum treated in the step (1) into a carboxylic acid aqueous solution to carry out solution crystallization reaction, adding potassium carboxylate into the carboxylic acid aqueous solution to regulate and control the crystallization rate and crystal morphology, carrying out solid-liquid separation after the reaction is finished, and washing, drying and ball-milling the solid to obtain the high-quality alpha-semi-hydrated gypsum powder. The alpha-semi-hydrated gypsum product obtained by the invention is high in purity, and the hydrated body has high absolute dry compressive and flexural strength.

The invention discloses a preparation method of a hybrid passivation back contact battery, and the preparation method comprises the following steps: providing a silicon wafer which comprises a first surface and a second surface which are oppositely arranged, and the second surface comprises a first region and a second region; a tunneling oxide layer and a doped polycrystalline silicon layer are sequentially deposited on the second surface, the doped polycrystalline silicon layer is annealed, a PSG mask is formed on the surface of the doped polycrystalline silicon layer, the annealing temperature ranges from 800 DEG C to 900 DEG C, and the annealing time ranges from 1800 s to 2200 s; and carrying out graphical film opening on the PSG mask on the first region, and removing the tunneling oxide layer and the doped polycrystalline silicon layer on the first region. By optimizing the annealing process of the doped polycrystalline silicon layer, prolonging the annealing time and reducing the annealing temperature, the crystallization rate of polycrystalline silicon can be reduced, the photoelectric conversion efficiency of the cell is remarkably improved, and meanwhile, the electrical properties such as contact resistivity and the like are also remarkably improved.

The invention provides a tin-based perovskite thin film, a preparation method thereof and a tin-based perovskite solar cell, and belongs to the technical field of photovoltaic materials. The preparation method comprises the following steps: dissolving a tin-based perovskite raw material in an organic solvent, and adding polyvinyl alcohol or polyvinylpyrrolidone to prepare a tin-based perovskite precursor solution; and coating the tin-based perovskite precursor solution through a printing method to form a film, and carrying out annealing treatment to obtain the tin-based perovskite thin film. According to the invention, polyvinyl alcohol or polyvinylpyrrolidone is used to slow down the crystallization rate of perovskite, and is used as a template to provide heterogeneous nucleation sites, so that the defect state density is reduced, and the compactness of the perovskite film is improved.

A method of manufacturing an electrode for use in battery manufacturing includes drying an electrode material in a compact phase, applying an electric field to the electrode material during the compact phase, and adjusting a frequency and strength of the electric field to control crystallization of a binder material. The electrode material includes a binder material. The crystallization rate of the binder material is increased or decreased.

The present disclosure provides a method of controlling binder crystallization during a drying process in electrode fabrication. A method of producing an electrode for battery fabrication includes: drying an electrode material in a compaction phase; applying an electric field to the electrode material during the compaction phase; and adjusting the frequency and magnitude of the electric field to control crystallization of the binder material. The electrode material includes a binder material. The crystallization rate of the binder material is increased or decreased.

The utility model provides a brine evaporative crystallization device for industrial salt production, which comprises a box body, foot stools which are uniformly distributed are fixedly connected to the bottom wall of the box body, a ventilation bin is fixedly connected to the top wall of the box body, and the brine evaporative crystallization device further comprises a bearing assembly which is rotatably connected to the inner wall of the box body and is used for bearing brine to be evaporated, the bearing assembly comprises rotating frames rotationally connected to the inner wall of the box body and symmetrically distributed about the central axis of the box body, an evaporation disc rotationally connected to the inner wall of the box body through the rotating frames, and an adapter fixedly connected to the bottom wall of the evaporation disc; the supporting assembly is rotationally connected to the inner wall of the box body; the heating assembly is fixedly connected to the bottom wall of the evaporation disc; the ventilation assembly is arranged on the inner wall of the ventilation bin; the collecting assembly is arranged on the inner wall of the box body. The brine evaporation device can control the air velocity on the surface of brine in the brine evaporation process, accelerates the evaporation and crystallization rate, can automatically collect crystals evaporated from the brine, reduces the labor intensity of workers, and improves the collection efficiency of the crystals.

The present invention discloses a preparation method of high-purity amino gallium, indium, and aluminum compounds, belonging to the technical field of semiconductor chips, and comprising the following steps: The first step is to prepare a lithium dimethylamide n-hexane suspension; the second step is to prepare one of crude tris(dimethylamino)gallium dimer, crude tris(dimethylamino)indium dimer, and crude tris(dimethylamino)aluminum dimer; the third step is to purify the crude tris(dimethylamino)metal compound by stepwise cooling recrystallization to obtain high-purity amino gallium, indium, and aluminum compounds; the present invention purifies the crude tris(dimethylamino)metal compound by stepwise cooling recrystallization, which not only has high efficiency and simple process, but also has a moderate crystallization rate of the product during the recrystallization process, will not form impurity encapsulation, has good crystal form of the product, and the purity is ≥99.9999% (6N), meeting the purity requirements for ALD / CVD film deposition of semiconductor chips.

The invention provides a production device and process for increasing the content of magnesium citrate crystals. The problems that in the prior art, the impurity co-crystallization rate is high, and crystal forms are difficult to control are solved. The device comprises a gradient temperature control multi-stage crystallization device and a crystal form directional regulation and self-adaptive separation system. The gradient temperature control multi-stage crystallization device is composed of a main crystallizer, a gradient temperature control system, an ultrasonic-assisted system and a liquid phase partition circulating system, and the crystallization environment is accurately controlled through the temperature gradients of five independent temperature zones. The crystal form directional regulation and self-adaptive separation system is composed of a seed crystal dynamic inoculation device, an electric field auxiliary directional crystallization system, a real-time crystal morphology analysis system and a self-adaptive separation system, and the crystal morphology and particle size distribution can be accurately controlled. According to the process disclosed by the invention, the main content of magnesium citrate is increased to 98.8 + / -0.3%, heavy metal impurities and organic impurities are respectively reduced by 70% and 75%, the crystal form consistency is increased to 96 + / -2%, the production period is shortened by 33%, and the process has remarkable economic benefits and social benefits.

The present invention provides a novel crystal seed suitable for a crystallization fluidized bed, a preparation method thereof, and an application thereof. The performance and function of the crystal seed are optimized and improved, the crystallization rate is accelerated, the crystallization speed is shortened, and the crystal nuclei can be effectively fixed on the surface of the crystal seed during the hardness removal process, thereby avoiding the formation of microcrystalline nuclei in the water body, reducing scaling, and accelerating the start-up speed of crystallization. In addition, the preparation method of the novel crystal seed is simple and the performance is stable. According to tests, when the novel crystal seed prepared by the present invention is put into a crystallization fluidized bed reactor for a hardness removal process, the hardness removal rate can reach 85%-95%.

The invention provides a high-flowability reclaimed material modified PET injection molding material and a molding method thereof. Comprising the following steps: mixing the following components in percentage by weight: 65%-70% of recycled PET, 8%-12% of a PET-BA block copolymer, 2%-4% of a bifunctional polar chain extender, 1%-3% of a nitrogen-doped MXene nanosheet, 3%-6% of a thermally induced reversible Diels-Alder structural monomer, 8%-12% of a plasma modified POE-g-COOH toughening agent, 2%-4% of a polyester-amino silane grafted elastomer and 1%-3% of an efficient phosphate metal salt nucleating agent, by adding the PET-BA block copolymer, the nitrogen-doped MXene nanosheet and the Diels-Alder structural monomer, the melt viscosity of the material is remarkably reduced, the fluidity is improved, and the resistance in the injection molding process is reduced; according to the present invention, the difunctional polar chain extender and the plasma modified POE-g-COOH toughening agent are adopted to enhance the tensile strength, the impact toughness and the bending modulus of the recovered PET so as to make the material meet various molding requirements, and the nitrogen-doped MXene nanosheet and the efficient phosphate metal salt nucleating agent are added to improve the thermal conductivity and the crystallization rate of the material.

The invention belongs to the technical field of tungsten hydrometallurgy, and particularly relates to a method for improving the crystallization rate of ammonium paratungstate, which comprises the following steps: S1, obtaining an ammonium tungstate solution which comprises metatungstate ions; s2, adding a supersaturation degree regulator into the ammonium tungstate solution, wherein the supersaturation degree regulator comprises hydrogen peroxide and ammonia water; s3, heating the ammonium tungstate solution to a first temperature, and then adding superfine ammonium paratungstate; s4, the ammonium tungstate solution is heated to a second temperature, heat preservation and continuous stirring are conducted, and ammonium paratungstate crystals are obtained; by adjusting parameters such as temperature, pH value, solvent type and concentration, optimizing crystallization conditions with metatungstate ions and ammonium paratungstate at the same time, improving the crystallization rate, and by controlling the degree of supersaturation of the solution, the situation that the crystallization rate is affected due to non-uniform crystal growth caused by too high crystallization rate is avoided, and the quality of the product is improved. The supersaturation degree can be controlled by adjusting parameters such as solution concentration and temperature.

The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite thin film and a preparation method and application thereof. A fluorine-containing phosphazene compound is used as a ligand and is mixed with a perovskite precursor solution composed of lead iodide, formamidine iodine and cesium iodide, spin coating is performed, the fluorine-containing phosphazene compound and part of formamidine cations form hydrogen bonds, part of formamidine cations are anchored at the bottom of a perovskite film, Cs-formamidine cations are uniformly distributed, and the perovskite film is prepared. Meanwhile, the fluorine-containing phosphazene compound and Pb < 2 + > form a coordinate bond, Pb < 2 + > defects are passivated, and the perovskite thin film is obtained through anti-solvent treatment and annealing treatment. The fluorine-containing phosphazene compound interacts with the components in the perovskite precursor solution, so that the nucleation rate of perovskite can be increased, the crystallization rate can be slowed down, the tensile stress can be eliminated, the perovskite does not enter crystal lattices, and the stability and crystallinity of the film are guaranteed. The perovskite thin film can be used for an inverted perovskite solar cell, and the performance and the stability of a device are improved.

The invention provides a crystal pulling method for reducing the head resistivity of a heavily arsenic-doped silicon single crystal, and belongs to the technical field of doped silicon single crystal production. Comprising the following steps: S1, sequentially carrying out a primary doping process, a primary temperature testing process, a primary seeding process, a re-melting process, a supplementary doping process, a secondary temperature testing process, a secondary seeding process, a shouldering process and an equal-diameter process; s2, if NG appears in the guiding and releasing process or the equal-diameter process, re-melting the crystal bar and carrying out supplementary doping, and then sequentially carrying out a temperature testing process, a crystal guiding process, a shouldering process and an equal-diameter process; s3, when the sum of the first doping multiple and the supplementary doping multiple reaches the total doping multiple, supplementary doping is stopped. By controlling the doping interval time and the total doping multiple, the head resistivity can be reduced and controlled within the upper limit of the specification, and impurities can be doped more uniformly, so that the crystallization rate is increased, the drawing and discharging times are reduced, and the quality of the drawn monocrystalline silicon is ensured.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.

The invention relates to the field of photovoltaic technology, and discloses a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, wherein the back surface of the silicon substrate comprises first regions and second regions which are alternately arranged; the first dielectric layer is located in the first region; the first doping layer is positioned on one side, deviating from the silicon substrate, of the first dielectric layer; the second doping layer is located on the side, away from the first dielectric layer, of the first doping layer; wherein the crystallization rate of the first doping layer is greater than that of the second doping layer, and the thickness of the second doping layer is greater than that of the first doping layer. The passivation contact performance of the battery can be improved, and the conversion efficiency of the battery is improved.

The invention discloses a regulation and control method and system for controlling the beef tallow crystallization morphology based on ultrasonic assistance, and belongs to the technical field of food production control, and the regulation and control method comprises the steps: deploying a sensor cluster on a beef tallow cooling crystallization tank, collecting process data of the beef tallow crystallization state in real time in the beef tallow crystallization process, and uploading the process data to a processing device; the processing device preprocesses the data collected by the sensor cluster, aligns the preprocessed data with a timestamp, and integrates the preprocessed data to construct a sensor historical database; a processing device is called to analyze data in the sensor historical database, a key index dynamic model capable of reflecting internal association between regulation and control parameters and crystal morphology is constructed, and an optimized regulation and control algorithm is designed based on the key index dynamic model; based on the model design optimization regulation and control algorithm, the technical problem that the crystallization rate and beta'crystal form control cannot be realized at the same time due to single regulation and control means in the traditional method is solved.

The invention discloses a hydrolysis-resistant PBT reinforced material capable of being subjected to laser welding and a preparation method of the hydrolysis-resistant PBT reinforced material, and belongs to the field of engineering plastics. Comprising the following raw materials in parts by mass: 45-70 parts of PBT resin, 0.5-1 part of a nucleating agent, 0.5-1 part of a nucleating auxiliary agent, 0.1-1 part of an antioxidant, 0.1-1 part of a lubricant, 0.2-0.8 part of a hydrolysis-resistant agent, 1-3 parts of a toughening agent and 25-45 parts of glass fibers, the nucleating auxiliary agent is sodium-doped potassium aluminosilicate. The nucleating agent can improve the crystallization rate of PBT, refine the grain size and reduce light scattering, and the hydrolysis-resistant agent can block autocatalytic hydrolysis circulation. And the composite sodium-doped potassium aluminosilicate not only can provide a large number of sites for PBT nucleation, but also can adsorb and capture water molecules in the environment and small molecules in an adsorption material and reduce hydrolysis reaction, so that the reinforced PBT material can be suitable for laser welding, and the long-term stability of the material in a high-temperature and humid environment can be guaranteed.

Disclosed is a polymer composition including a polyester copolymer and a biodegradable polymer, wherein the polyester copolymer includes two types of ester bond-forming monomer residues as main structural units, when the two types of ester bond-forming monomers are defined as “monomer A” and “monomer B”, respectively, the polyester copolymer satisfies (1) to (3) below, the biodegradable polymer has a melting point of 100° C. or higher, and the biodegradable polymer is included in an amount of 0.1% by weight or more and less than 30% by weight in 100% by weight of the total of the polyester copolymer and the biodegradable polymer. The present invention provides a polymer composition having low Young's modulus and high tensile strength. (1) An R value represented by the following formula is 0.45 or more and 0.99 or less. R=[AB] / (2[A][B])×100, where [A]: molar fraction (%) of monomer A residues in the polyester copolymer, [B]: molar fraction (%) of monomer B residues in the polyester copolymer, and [AB]: molar fraction (%) of a structure in which monomer A residues and monomer B residues are adjacent to each other (A-B and B-A) in the polyester copolymer. (2) A crystallization rate of monomer A residues and a crystallization rate of monomer B residues are less than 14%. (3) A melting point is lower than 100° C. or a clear melting point does not exist.

The invention discloses a measurement device and a measurement method for a solution crystallization growth rate, relates to the technical field of solution crystallization measurement equipment, and mainly aims to provide a measurement device capable of simply, conveniently and intuitively measuring the one-dimensional crystallization growth rate of a solvent in a solution with different compositions and different supercooling degrees. According to the main technical scheme, the device for measuring the crystallization growth rate of the solution comprises a constant-temperature part, a temperature measuring part and a control part, one end of a first circulating pipeline is connected to the first thermostatic bath, the other end of the first circulating pipeline is connected to the upper side surface of the first sleeve, one end of a second circulating pipeline is connected to the first thermostatic bath, and the other end of the second circulating pipeline is connected to the lower side surface of the first sleeve; the first sleeve is sleeved outside the sample tube component, and one end of the sample tube component is inserted into the second thermostatic bath; and the shooting end of the camera part faces the first sleeve. The method is mainly used for measuring the crystallization rate of the solution.

The application discloses a nucleating agent, a non-woven fabric and a preparation method and application thereof. The nucleating agent comprises inorganic nucleating agents and high molecular nucleating agents; the inorganic nucleating agents comprise at least one of carboxyl modified nano-silica, nano-calcium carbonate and sharp titanium type nano-titanium dioxide; the high molecular nucleating agents comprise at least one of a wholly aromatic polyester, ethylene-methacrylic acid copolymer sodium salt and a long chain carboxylic acid salt; and the nucleating agent is in the form of a water dispersion. The nucleating agent comprises inorganic nucleating agents and high molecular nucleating agents, and can quickly induce nucleation at a lower temperature, reduce crystallization enthalpy and significantly improve the crystallization rate, so that the mechanical properties, dimensional stability and thermal stability of the non-woven fabric are enhanced. The use of the nucleating agent makes the fiber structure of the non-woven fabric more uniform and dense, reduces the crystallization temperature, improves the mechanical properties, and reduces shrinkage and deformation during use.

The present invention discloses a preparation method of an improved tin-based perovskite thin film and its application. The preparation method of the present invention includes: preparing a hole transport layer on a cleaned conductive glass; preparing a precursor solution containing a cyclic thione compound and a tin-based perovskite material; spin-coating the precursor solution, generating a perovskite thin film in one step using an anti-solvent, and annealing to obtain a tin-based perovskite thin film. A class of cyclic thione compounds is introduced into the coating precursor solution in the present invention. This class of compounds can effectively coordinate with tin ions, thereby significantly slowing down the crystallization rate of the tin-based perovskite material, obtaining a smooth, dense and surface defect-passivated tin-based perovskite thin film. The tin-based perovskite solar cell prepared using this thin film has significantly improved photoelectric conversion performance, stability and process repeatability, and the highest photoelectric conversion efficiency exceeds 12%.

The invention particularly relates to a preparation method of a functional carrier for inducing crystallization of high-salinity leachate, and aims to solve the problems of low removal efficiency of multivalent ions in high-salinity wastewater, low crystallization rate and difficulty in resource recovery. According to the functional carrier, silanization modified FeO and aniline are subjected to in-situ polymerization to form a core-shell structure, the core-shell structure is compounded with activated nano CaCOs, and the functional carrier with a hierarchical porous structure, surface difunctional acid-base sites and superparamagnetism is prepared through a sol-gel method and temperature-controlled calcination. By the adoption of the technical scheme, efficient synergistic adsorption and directional induced crystallization of ions such as sulfate radicals, calcium and magnesium can be achieved, the crystallization induction period is remarkably shortened, good regeneration performance and magnetic separation convenience are achieved, and the method is suitable for efficient treatment of high-salt leachate and salt resource recycling.

The invention discloses an alcohol modified TS-1 catalyst as well as a preparation method and application thereof, and belongs to the technical field of molecular sieve catalysts. The alcohol modified TS-1 catalyst is prepared by the following steps: preparing a mixed solution from SiO2, 0.04 TiO2, 0.30 TPAOH, 50 H2O and nMOH according to the molar ratio of SiO2: 0.04 TiO2: 0.30 TPAOH: 50 H2O: nMOH; carrying out hydrothermal reaction on the mixed solution to obtain the alcohol modified TS-1 molecular sieve catalyst in one step; the preparation method is simple, the crystallization rate of the molecular sieve is increased by adding alcohols, more titanium atoms can be promoted to enter a skeleton, formation of a Ti-OOH active intermediate is facilitated, and generation of non-active anatase is reduced; the TS-1 molecular sieve is high in crystallinity and shows relatively high activity and alkylene oxide selectivity in a long-chain olefin epoxidation reaction.

The invention relates to the technical field of photovoltaic cells, in particular to a hole transport material and a preparation method thereof, a solar cell and an optoelectronic device. The hole transport material comprises a hole transport polymer, and the hole transport polymer has a repeating unit as shown in a formula (I). The hole transport material provided by the invention can effectively passivate defects in a perovskite thin film, not only can reduce non-radiative recombination and carrier loss, but also can regulate and control the crystallization rate of the perovskite thin film and improve the quality of the perovskite thin film, thereby improving the photoelectric conversion efficiency of a perovskite solar cell; according to the perovskite solar cell, no doping agent needs to be added additionally, the cost is reduced, side reactions are reduced, crystal lattices can be stabilized and ion migration can be inhibited through the long-chain structure of the polymer and interaction between the thiourea group and perovskite, and therefore the efficiency and stability of the perovskite solar cell are improved.