50 results about "Bulk resistivity" patented technology

The invention discloses an inflation method for regulating and controlling the growth rate of silicon carbide crystals and a related device, and relates to the technical field of semiconductors, and the inflation method comprises the following steps: obtaining the mass loss rate of a silicon carbide crystal growth system based on a weighing sensor; the quality loss rate is compared with a theoretical loss rate, a deviation rate is obtained, and the theoretical loss rate is the quality loss rate meeting the production requirement under the current technology; acquiring a growth stage parameter, judging whether the growth stage parameter reaches a preset value or not, if the growth stage parameter reaches the preset value, adopting a first control strategy, and if the growth stage parameter does not reach the preset value, adopting a second control strategy, the growth stage parameters comprise the silicon carbide crystal thickness corresponding to the preset crystal growth time. According to the method, the uniformity of the resistivity of the silicon carbide crystal is improved by regulating and controlling the doping gas proportion in the growth process of the silicon carbide crystal.

The invention provides a microwave pulse electric field vibration synergistic fracturing and permeability increasing gas extraction promoting device and method, and relates to the technical field of low-permeability coal seam fracturing and permeability increasing. According to the method, multi-physical field coupling synergistic interaction is achieved, and the fracturing efficiency and range are greatly improved. According to the invention, deep collaboration of multiple physical fields is realized through a specific time sequence and energy ratio. The thermal stress generated by microwave preheating enables a large number of microcracks to be generated in the coal body and soften the coal quality, and the resistivity and the medium strength of the coal body are reduced. In the state, the pulsed electric field with lower voltage can preferentially and effectively break down and expand the fracture network along the micro-fracture path; meanwhile, high-frequency mechanical vibration not only efficiently transmits energy to the tip of the fracture to generate stress concentration to promote extension of the fracture, but also disturbs coal particles to promote gas desorption. Through three-field cooperation, cracks can be more efficiently initiated, expanded and communicated in a three-dimensional space, a three-dimensional complex crack network far beyond the action range of a single technology is formed, and the overall permeability of a coal seam is remarkably improved.

Provided in the present application are a copper grid line and the use. The copper grid line comprises a grid line body portion and a grid line peripheral portion, wherein the grid line peripheral portion is located on both sides of the grid line body portion, and the width of the grid line peripheral portion on either side does not exceed 15%-50% of the width of the grid line body portion; the median particle size of a copper powder in the grid line peripheral portion is less than the median particle size of a copper powder in the grid line body portion. Since a dense structure can be formed at the grid line peripheral portion, the contact area between the copper grid line and the surface of a cell is increased, and the adhesion of the copper grid line is improved, such that moisture and oxygen are prevented from penetrating through the interface between the copper grid line and the underlying cell to oxidize the copper powder in the body portion of the copper grid line, thereby reducing the bulk resistivity of the grid line and the contact resistance between the grid line and the cell.

The invention discloses a cerium oxide doped indium oxide-based target material and a preparation method and application thereof.The cerium oxide doped indium oxide-based target material is prepared from, by weight, 97-99 parts of indium oxide, 1-3 parts of cerium oxide and 0.01-0.05 part of metal oxide, and the metal oxide comprises at least one of aluminum oxide, zirconium oxide and titanium oxide. According to the cerium oxide-doped indium oxide-based target material and the preparation method and application thereof, the sintering density of the target material is improved, air holes between crystal boundaries are eliminated, the bulk resistivity of the target material is remarkably reduced in a metal oxide doping mode, and the cerium oxide-doped indium oxide-based target material can be applied to magnetron sputtering coating and improve the migration rate of a sputtering film.

The application provides a low-temperature electrolyte, a positive electrode slurry and a low-temperature sodium ion battery, and belongs to the technical field of battery materials.The low-temperature electrolyte comprises sodium hexafluorophosphate, propylene carbonate, ethylene carbonate, dimethyl carbonate, methyl ethyl carbonate, fluoroethylene carbonate, 2,2,3,4,4,4-hexafluorobutyl acrylate and 1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether.The battery comprises the low-temperature electrolyte.The low-temperature electrolyte and the low-temperature sodium ion battery can not only be compatible with blended positive electrode materials, but also take into account the low-temperature performance, ensure that the prepared low-temperature sodium ion battery has good reaction kinetics and cycle performance, and can also improve the energy density of the electrode and reduce the powder resistivity.

The invention discloses a system and a method for in-situ measurement of thermodynamic electrical parameters of a rock-soil body. The system comprises an in-situ detection probe, a data acquisition instrument, a penetration assembly for connecting the in-situ detection probe and the data acquisition instrument, and a data analysis platform connected with the data acquisition instrument, the in-situ detection probe comprises a CPTU static sounding probe, a four-phase pole resistivity probe, a heating probe inserted into a hollow cylinder of the four-phase pole resistivity probe, and an adapter connected with the CPTU static sounding probe and the four-phase pole resistivity probe; the four-phase electrode resistivity probe comprises a hollow metal shell, and an insulating material, a voltage electrode and a current electrode are arranged on the outer ring of a cylinder at intervals. During testing, the resistivity of the soil body is firstly tested, then the heating wire is electrified and heated, and the four-phase pole resistivity probe is used as a temperature sensor of the heating probe, so that synchronous testing of soil layer classification and thermodynamic electrical parameters of the rock-soil body is realized. The invention further provides a column heat source-parameter estimation method for thermal parameter testing, and the testing accuracy is remarkably improved.

The application provides an insulation material resistivity testing device and method, the device comprises a shielding shell provided with a shielding test cavity, an insulation material sample is arranged in the shielding test cavity, and the device further comprises a radiation module, a high-temperature module, a radiation collimation device, a PC module and a pressure and current monitoring device; the pressure and current monitoring device is connected with the insulation material sample; the PC module is connected with the radiation module, the high-temperature module and the pressure and current monitoring device; the high-temperature module is further connected with the pressure and current monitoring device; the radiation module is used for providing a radiation beam for the inside of the shielding test cavity; the high-temperature module is used for providing a high-temperature environment for the inside of the shielding test cavity; the pressure and current monitoring device is used for applying a voltage to the insulation material sample and monitoring the current flowing through the insulation material sample; and the PC module determines the surface resistivity or volume resistivity of the insulation material sample according to the received voltage and current. The device can complete the resistivity testing of the insulation material under different radiation intensities and different temperature environments.

The invention belongs to the technical field of conductive materials, and particularly discloses a thixotropic adjustable conductive material carrier and a preparation method thereof. Carbon nanotube acidification, silver nanowire silanization and polymer matrix compounding are optimized through a multi-stage mixing process, and the conductive material with high stability and low resistivity is prepared. The preparation method specifically comprises the following steps: acidifying carbon nanotubes with mixed acid, silanizing AgNW with KH550, carrying out ultrasonic dispersion with a TPU solution and an epoxy resin solution, adding MMT / PVP, carrying out shear mixing, and finally introducing the TPU solution and epoxidized soybean oil (ESO) for secondary mixing. The obtained conductive material carrier is low in resistivity and good in stability, the viscosity is remarkably reduced at a high shear rate, and the conductive material carrier has excellent conductivity, processability and long-term stability and is suitable for the fields of flexible electronics, sensors and the like.

The application discloses a kind of composite insulation coated metal soft magnetic powder and coating method and application.By system process flow implementation and performance comparison analysis, the soft magnetic powder composite insulation coating technology provided by the application shows significant advantages.Three-layer composite shell structure (flexible buffer layer+insulation layer+nanometer layer) effectively solves the problem of shell microcrack, insulation degradation and high dielectric loss under high frequency, high pressure and high temperature environment in traditional coating.The optimized key data: MLD / Al2O3 / [Al2O3 / HfO2] shell continuity rate reaches 99.8%, bulk resistivity is 5.2*10 9 Ω•cm, 100kHz loss is reduced by 67.1%, salt spray weight loss is only 38% of the control, fully meets the demand of high frequency magnetic device.The application provides a reliable material basis for the miniaturization and high efficiency of high frequency power electronic device.

A beryllium aluminate component may include a beryllium aluminate ceramic comprising 90 wt% or more beryllium aluminate. The ceramic may be characterized by one or more of: a thermal conductivity from 17 W / m·K to 175 W / m·K at room temperature; a bulk resistivity greater than 1 x 1015 ohm-cm at room temperature and / or greater than 1 x 109 ohm-cm at 700 ºC and / or greater than 1 x 1010 ohm-cm at 600 ºC; a coefficient of thermal expansion from 7.4 to 9.0 µm / (m·K) at room temperature; a near bioequivalence to human body tissue (Zeff) from 7.2 to 11.3; and a density of from 3.4 to 3.9 g / cc. The beryllium aluminate components may be used in pedestal assemblies, wafer pedestals, wafer chucks, integral resistance heaters, and / or components thereof, as well as for optically stimulated luminescence, thermoluminescence, radioluminescence, or dosimetry systems thereof. Processes for preparing the beryllium aluminate ceramic components are also disclosed.

The invention relates to the technical field of nondestructive testing of geotechnical engineering anchoring structures, in particular to an anchor cable grouting quality detection method based on electrical resistance tomography, which comprises the following steps: establishing a refined electrical simulation model, performing differential insulation parameter optimization design on a free section and an anchoring section of an anchor cable, and effectively inhibiting current shunt; optimizing the spatial arrangement of the electrode array based on targets such as the signal-to-noise ratio and the sensitivity field uniformity; in an inversion algorithm, the steel strand and an insulating layer are used as prior constraints, and the dynamic identification capability is improved in combination with time sequence regularization; and finally, performing intelligent comparative analysis on the resistivity distribution obtained by inversion and a pre-constructed grouting body resistivity characteristic reference library, and outputting a quantitative test result and a visual image containing defect positions, types, sizes and overall quality grades. According to the invention, high-precision, three-dimensional and quantitative nondestructive testing and dynamic monitoring of the grouting quality of the anchor cable are realized.

Described are low resistivity metal layers / films, such as low resistivity ruthenium (Ru) layers / films, and methods of forming low resistivity metal films. Ru layers / films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)2+O2 ALD, as well as a two-step ALD process using Ru(DMBD)(CO)3+TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)2+O2 to increase layer / film thickness. The Ru layer / films and methods of preparing Ru layers / films described herein may be suitable for use in barrierless via-fills, as well as at M0 / M1 interconnect layers.

This utility model relates to the technical field of resistivity measuring equipment, specifically to a PETG polyester melt resistivity measuring device that facilitates wiring. It includes a resistivity measuring device body connected to four connecting wires. One connecting wire is connected to a heating box, inside which is placed a storage tray, and inside the storage tray is placed a pressure plate. The pressure plate and storage tray are detachably connected to the connecting wires via a connecting mechanism. The connecting mechanism includes a connecting block and a connecting cylinder. A rotating block is rotatably connected to the inner wall of the connecting block, and the connecting wire passes through the rotating block and is fixedly connected to a flexible wire. A fixing post is fixedly connected to the inner bottom surface of the connecting cylinder. This utility model completely conceals the wiring points within the connecting cylinder, thus avoiding the problem of exposed wiring points being susceptible to external environmental influences, potentially causing short circuits and other significant safety hazards. Furthermore, the operator only needs to insert the cover into the connecting cylinder and slightly rotate the connecting block to complete the wiring operation.

This invention discloses a temperature-sensitive, current-limiting, self-shutting current collector for lithium-ion batteries, addressing the issues of response delay and insufficient safety redundancy inherent in existing BMS (Battery Management System) protection technologies. It comprises a metal current collector, a temperature-sensitive current-limiting layer positioned along the current direction, and an electrode active material layer. The temperature-sensitive current-limiting layer uses a positive temperature coefficient material, exhibiting at least a 102-fold increase in volume resistivity within a narrow temperature range of 90-130°C, and also possessing a high specific heat capacity. Under normal conditions, the temperature-sensitive current-limiting layer exhibits low resistance, allowing for normal charging and discharging of the battery cell. At high temperatures, its resistance increases sharply, limiting or cutting off the current and mitigating heat generation. Upon triggering, this current collector is identified by the existing BMS through internal resistance and current anomalies, forming dual internal and external protection. This requires no modification to the existing system, offers high manufacturability, and significantly improves the safety and reliability of energy storage systems.

The present application provides a conductive paste and a solar cell. The conductive paste includes a conductive powder, a thermosetting component, a curing agent, a solvent, a silane coupling agent, and a conductive promoter including one or more of compounds having a structural formula satisfying formula (1), wherein R has an unsaturated bond, X1, X2, X3, X4 are each independently a monovalent cation, an atom, a polyether chain having 1-18 carbon atoms, a polyester chain having 1-18 carbon atoms, a polyurea chain having 1-18 carbon atoms, a polyamide chain having 1-18 carbon atoms, a polyacrylic acid chain having 1-18 carbon atoms, a polyurethane chain having 1-18 carbon atoms, an alkyl or fluorine-substituted alkyl having 1-18 carbon atoms, an alkenyl having 1-18 carbon atoms, or an alkylene glycol adduct of alkyl or alkenyl having 1-18 carbon atoms. Thus, by adding the conductive promoter, the grid line resistivity, bulk resistivity, and / or contact resistance of the conductive paste can be reduced.

The utility model provides a feeding device and a continuous czochralski single crystal furnace, and relates to the technical field of silicon single crystal manufacture, the feeding device comprises a first feeding cylinder, a second feeding cylinder and a feeding pipe, one end of the feeding pipe is used for stretching into a single crystal furnace, the other end of the feeding pipe is provided with a feeding port, and the feeding port is provided with a feeding port. A discharging port of the first feeding cylinder and a discharging port of the second feeding cylinder are arranged corresponding to the feeding port respectively, a first valve is arranged at the discharging port of the first feeding cylinder, the opening degree of the first valve is adjustable, a second valve is arranged at the discharging port of the second feeding cylinder, and the opening degree of the second valve is adjustable. Compared with the prior art, the feeding device disclosed by the utility model not only can regulate and control the discharge amount of the silicon material and the mother alloy according to the set weight ratio of the silicon material to the mother alloy, but also can avoid the phenomenon that the concentration of the mother alloy is graded in a silicon solution, and improves the distribution uniformity of the resistivity of the monocrystalline silicon crystal and the stability of the battery efficiency.

The application discloses a method for jointly determining cement initial setting time and final setting time by using multiple physical fields, and comprises the following steps: high-speed stirring cement paste according to a designed water-cement ratio, and recording the stirring completion time into a data acquisition and processing system; filling the stirred cement paste into a sample cavity of a holder; monitoring and collecting data of the cement paste in the sample cavity, and calculating acoustic impedance and aspect ratio; calculating temperature-corrected bulk resistivity according to the resistance value, and inverting equivalent porosity; generating T2 spectrum by using test data, and obtaining total hydrogen signal strength; identifying initial setting time and final setting time in a joint change spectrum by using the data acquisition and processing system, and outputting; and superimposing and analyzing multiple parameters according to a unified time axis, and determining the initial setting time and the final setting time by using parameter cooperation.

This invention discloses a method for detecting the bulk resistivity uniformity of lightly phosphorus-doped monocrystalline silicon rods and wafers, belonging to the field of monocrystalline silicon rod technology. The method involves preparing the lightly phosphorus-doped monocrystalline silicon rods using the Czochralski method, uniformly doping them with light phosphorus via ion implantation. The detection method includes: axial bulk resistivity uniformity detection; slicing the lightly phosphorus-doped monocrystalline silicon rods; radial bulk resistivity uniformity detection; construction and uniformity determination of the three-dimensional bulk resistivity distribution; and data archiving and feedback. This invention solves the problem that existing technologies can only achieve single-dimensional detection and cannot comprehensively evaluate bulk resistivity uniformity. This invention can intuitively and comprehensively reflect the bulk resistivity distribution of lightly phosphorus-doped monocrystalline silicon rods and wafers, accurately locate areas with poor uniformity, avoid defect omissions caused by single-dimensional detection, and comprehensively evaluate bulk resistivity uniformity.

The invention discloses composite insulation coated metal soft magnetic powder as well as a coating method and application thereof. Through system technological process implementation and performance comparative analysis, the soft magnetic powder composite insulation coating technology provided by the invention shows remarkable advantages. The three-layer composite shell layer structure (the flexible buffer layer, the insulating layer and the nanometer layer laminated layer) effectively solves the problems of shell layer micro-cracking, insulation degradation and high dielectric loss of the traditional coating in high-frequency, high-voltage and high-temperature environments. Optimized key data are as follows: the continuity rate of an MLD / Al2O3 / [Al2O3 / HfO2] shell layer reaches 99.8%, the volume resistivity is 5.2 * 10 < 9 > omegacm, the 100kHz loss is reduced by 67.1%, the salt mist weight loss is only 38% of a contrast, and the requirements of high-frequency magnetic devices are comprehensively met. According to the invention, a reliable material basis is provided for miniaturization and high efficiency of high-frequency power electronic devices.

The invention discloses an insulating material based on metal-organic cage crosslinking and a preparation method and application thereof, and relates to the technical field of electrical insulating materials. The insulating material based on metal-organic cage crosslinking is formed by crosslinking epoxy resin, a curing component and a metal-organic cage, the curing component contains an anhydride curing agent, and amino groups are distributed on the surface of the metal-organic cage; according to the invention, the reaction activity difference among amino, anhydride and epoxy resin is utilized, the curing reaction is preferentially carried out at the interface of the metal-organic cage nanofiller at a lower first curing temperature, and then the crosslinking reaction between the anhydride curing agent and the epoxy resin is initiated at a higher temperature, so that the overall curing of the composite material is realized; according to the invention, uniform dispersion of the nanofiller in the epoxy resin is realized, a strong inorganic-organic bonding interface is constructed, and the bulk resistivity, breakdown strength and tensile strength of the epoxy resin composite insulating material are improved.

An electric field blocker plate which includes an electrically conductive ceramic having a bulk resistivity of less than about 5 ohm / cm. A semiconductor processing system which includes the electric field blocker plate is also disclosed.

The invention discloses a preparation method and application of a halogen-mixed hybrid perovskite MAPbBr3-nCln single crystal grown by a solution method, and relates to the technical field of perovskite crystal growth. The method comprises the following steps: dissolving a solute in an organic solvent to obtain a precursor solution; wherein the solute is prepared from MABr, PbBr2 and PbCl2; filtering the precursor solution to obtain filtrate; sealing the filtrate, and performing staged heating treatment in a constant-temperature water bath; and the mixed halogen hybrid perovskite MAPbBr3-nCln single crystal is obtained. According to the invention, the resistivity change rule of the halogen-mixed crystal is explored, and the high-resistance MAPbBr3-nCln single crystal can be obtained. And the bulk resistivity of the crystal can be improved while good transport performance is ensured.

The invention discloses an insulated gate bipolar transistor and a manufacturing method thereof, the insulated gate bipolar transistor comprises a gate line total area, an internal resistance unit and a gate lead area, the internal resistance unit is connected with the gate line total area, the internal resistance unit comprises at least three grooves filled with polycrystalline silicon, one groove is a reference groove determined according to the overall resistivity rho 0 of polycrystalline silicon and the target resistance value R0 of the internal resistance unit, at least one groove is an internal resistance increasing groove with the length increased and / or the cross section area decreased relative to the reference groove, and at least one groove is an internal resistance decreasing groove with the length decreased and / or the cross section area increased relative to the reference groove; and in the reference groove, the internal resistance increasing groove and the internal resistance reducing groove, one with the minimum difference value | Rg-R0 | between the actually measured resistance value Rg and the target resistance value R0 is connected with the gate lead area through a wire. In the invention, no matter whether the resistance value of the polycrystalline silicon filled in the groove is larger or smaller than the overall resistance value of the polycrystalline silicon, the resistance value can be corrected to be close to the target resistance value, and the parameter consistency is improved.

The invention relates to the technical field of electrode materials, and particularly provides conductive paste, an electrode, a preparation method and a photovoltaic cell. The conductive slurry comprises a silver conductive material, a silver-coated copper conductive material, an organic carrier and an auxiliary agent, the auxiliary agent at least comprises a dispersant, and the dispersant is selected from a sulfur-containing surfactant and / or a polyether amine dispersant. The conductive paste, the electrode, the preparation method and the photovoltaic cell provided by the invention are used for forming the electrode with low volume resistivity, high compactness and good adhesion strength.

The present invention relates to the field of power cable technology, and discloses a shielding material composition, a shielding material and a preparation method, a shielding material and an application thereof. The shielding material composition comprises, by weight, 55-73 parts of a polyolefin resin, 23-40 parts of a conductive filler, 0.5-2 parts of a cross-linking agent, 0.1-1.2 parts of a dispersant A, 0.2-2.5 parts of a dispersant B, 0.5-3 parts of a lubricant, and 0.5-2 parts of an antioxidant; wherein the dispersant A is an anionic dispersant having a weight-average molecular weight of 1-150,000 g / mol; and the dispersant B is a non-ionic dispersant. When the ratio of the polyolefin resin, the conductive filler, the cross-linking agent, the dispersant, the lubricant, and the antioxidant in the shielding material composition meets the required range of the present invention, the prepared shielding material has the characteristics of a smooth surface, low bulk resistivity, high mechanical properties, and a low PTC coefficient.

The invention discloses a method for growing a high-resistivity perovskite FAPbBr3 single crystal through iodine element doping compensation and application, and relates to the technical field of perovskite crystal growth. The method comprises the following steps: obtaining a precursor solution, sealing the precursor solution, and carrying out staged heating treatment on the sealed precursor solution in a constant-temperature water bath to obtain the iodine-doped compensated growth high-resistivity perovskite FAPbBr3 single crystal. By means of iodine element doping compensation, good transport performance is guaranteed, meanwhile, the bulk resistivity of the crystal is improved, the leakage current of a radiation detector can be reduced, and therefore excellent energy resolution of 5.49 MeV 241 Am alpha particles is obtained.

The application discloses a system and a method for in-situ determination of thermoelectric parameters of rock-soil bodies, which comprises an in-situ detection probe, a data acquisition instrument, a penetration assembly connecting the two, and a data analysis platform connected with the data acquisition instrument; the in-situ detection probe comprises a CPTU static sounding probe, a four-phase electrode resistivity probe, a heating probe inserted into a hollow cylinder of the four-phase electrode resistivity probe, and an adapter connecting the CPTU static sounding probe and the four-phase electrode resistivity probe; the four-phase electrode resistivity probe comprises a hollow metal shell, and an insulating material, a voltage electrode and a current electrode are arranged at intervals in a cylinder outer ring. In the application, the soil resistivity is first tested, then the heating wire is powered and heated, the four-phase electrode resistivity probe is used as a temperature sensor of the heating probe, and the synchronous test of the rock-soil body soil layer classification and the thermoelectric parameters is realized. The application also proposes a column heat source-parameter estimation method for the test of the thermal parameters, which significantly improves the accuracy of the test.

The application discloses a rotary steering while-drilling measurement unit and belongs to the technical field of oil drilling and logging, which comprises a while-drilling measurement body, a resistivity probe compression sleeve, an upper fixed short section, a quick connection joint, an electronic warehouse upper joint, an electronic warehouse outer cylinder, a circuit framework and an electronic warehouse lower joint. The upper part of the while-drilling measurement body is provided with a measurement line socket, and the lower end threaded part is provided with a PEEK ring. The electronic warehouse upper joint is fixed with the upper fixed short section through a pin shaft, so that quick connection and stable assembly are realized. The measurement unit can be integrated in a rotary steering system, is suitable for assembly requirements of various sizes, can be freely combined with various functional modules according to the needs of directional drilling operation, is connected through mutually matched male and female buckles between modules, and realizes power supply and communication through a single bus. The application has compact structure and reliable connection, is suitable for a while-drilling measurement, gamma logging and resistivity logging integrated while-drilling measurement and control instrument string, and improves the efficiency and reliability of while-drilling measurement.

The invention discloses a differential resistance liquid level measuring device and method suitable for conductive slurry, and belongs to the technical field of mine filling process automatic monitoring. The device comprises a detection probe and a measuring and calculating module; the detection probe comprises a first conductor, a second conductor and a third conductor which are arranged in parallel; the first conductor and the second conductor have the same resistivity and have obvious resistivity difference with the third conductor; when the liquid level of slurry is measured, the detection probe is partially inserted into the slurry; the measuring and calculating module measures the resistance between the top end of the first conductor and the top end of the second conductor and the resistance between the top end of the first conductor and the top end of the third conductor; and the liquid level of the slurry is calculated. The device is low in cost, resists dust shielding and mechanical vibration, is suitable for complex working conditions of underground goaf filling material level monitoring, and solves the reliability problem of a traditional liquid level meter in a mine filling scene.

A method of making a multilayer structure includes providing a single crystal semiconductor handling substrate including a front surface, a back surface, a circumferential edge connecting the front and back surfaces, and a central plane between the front and back surfaces. The single crystal semiconductor treatment substrate has a minimum body region resistivity of at least about 500 Ohm-cm. The method also includes depositing a semiconductor layer on the front surface of the single crystal semiconductor treatment substrate. Deposition of the semiconductor layer is performed by two or more cycles of depositing a portion of the semiconductor layer and interrupting the deposition to anneal the portion of the semiconductor layer after depositing the portion of the semiconductor layer.