Blackening method of lithium tantalate crystal substrate

A treatment method, lithium tantalate technology, applied in chemical instruments and methods, after treatment, crystal growth, etc., can solve the problems of Sumitomo's difficult control of process conditions, potential safety hazards, and Shin-Etsu's complex process, so as to improve the discharge phenomenon, Improved precision, easy control effects

Active Publication Date: 2017-03-22
FUJIAN JING AN OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a blackening treatment method for lithium tantalate crystal substrates, and at the same time solve the problems of Shin-Etsu's complex process and Sumitomo's process conditions that are difficult to control and hidden safety hazards.

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  • Blackening method of lithium tantalate crystal substrate
  • Blackening method of lithium tantalate crystal substrate
  • Blackening method of lithium tantalate crystal substrate

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Embodiment 1

[0032] This embodiment provides a blackening treatment method for a lithium tantalate crystal substrate. The surface of the metal sheet 1 is roughened by wet etching, and hydrofluoric acid, nitric acid or a mixture of the two is used for roughening by wet etching. The wet etching temperature is 20-80° C., and the wet etching time of the metal sheet is 3-10 minutes. The surface roughness Ra of the metal sheet 1 after treatment is 0.1 ~ 10um, refer to figure 1 In the cavity, the roughened metal sheet 1 and the lithium tantalate crystal substrate 2 are alternately stacked in a contact manner, wherein the material of the metal sheet 1 can be Al, Ti, Zn or Fe, and the material of the metal sheet 1 is preferably Al , the thickness D of the metal sheet 1 is 0.05-20 mm, placed in an environment lower than the Curie temperature, and the lithium tantalate crystal substrate 2 is reduced. Specifically, the ambient temperature during blackening treatment is 350-600°C, and the treatment t...

Embodiment 2

[0036] The difference between this embodiment and Embodiment 1 is that the surface of the lithium tantalate crystal substrate 2 is roughened, and the roughening is carried out by wet etching with hydrofluoric acid, nitric acid or a mixture of the two, and the wet etching temperature is Between 20 and 80 degrees Celsius, the wet etching time for the metal sheet is 3 to 10 minutes, and the wet etching time for the lithium tantalate crystal substrate is 3 to 10 hours. The surface roughness Ra of lithium tantalate crystal substrate 2 after treatment is 0.1~10um, see Figure 4 , stacking the roughened lithium tantalate crystal substrate 2 and the unroughened metal sheet 1 for reduction treatment.

[0037] Compared with the prior art, after the lithium tantalate crystal substrate is ground, a better flatness is obtained and then the reduction reaction is performed. The reduction reaction performance of the roughened lithium tantalate crystal substrate is better than that after grind...

Embodiment 3

[0040] According to the prior art, most of the current blackening processes are carried out after slicing. In combination with Embodiment 1 and Embodiment 2, this embodiment proposes a technical solution for roughening the metal sheet 1 and the lithium tantalate crystal substrate 2 respectively. Roughening is carried out by wet etching with hydrofluoric acid, nitric acid or a mixture of the two. The wet etching temperature is between 20~80°C. The wet etching time of the metal sheet is 3~10 minutes. Lithium tantalate The wet etching time of the crystal substrate is 3-10 hours. After roughening, the surface roughness Ra of the metal sheet 1 and the lithium tantalate crystal substrate 2 is 0.1-10 um.

[0041] see Figure 7 In the cavity, the roughened metal sheet 1 and lithium tantalate crystal substrate 2 are alternately stacked in a contact manner, wherein the material of the metal sheet 1 can be Al, Ti, Zn or Fe, and the thickness D of the metal sheet 1 is 0.05 ~20mm, place ...

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Abstract

The invention discloses a blackening method of a lithium tantalate crystal substrate. The blackening method includes that in a chemical reductive atmosphere, a metal sheet and the lithium tantalate crystal substrate are alternately stacked by means of contacting after the surfaces of the same are roughened, and put in an environment lower than Curie temperature, the lithium tantalate crystal substrate is reduced to convert the same from white or faint yellow to colored and non-transparent, and original characteristics of the lithium tantalate crystal substrate as a piezoelectric material are still maintained. Bulk resistivity of the lithium tantalate crystal substrate after being reduced can be lowered, discharging generated by pyroelectric effect due to temperature difference in the manufacturing process of a surface acoustic wave filter (SAW filter) can be improved, accuracy of photoetching process of an interdigital electrode line is improved, and increasing of yield of SAW device manufacturing and lowering of production cost are facilitated.

Description

technical field [0001] The invention relates to a method for manufacturing lithium tantalate crystals. The lithium tantalate crystals are used on wafers such as elastic surface acoustic wave filter devices, and metal interdigitated electrode patterns are fabricated by photolithography to process high-frequency analog signal signals of mobile phones. in application. Background technique [0002] Lithium tantalate (LT) crystal is a ferroelectric with a melting point of about 1650°C and a Curie temperature of about 600-610°C. Moreover, the main purpose of the LT substrate is as a surface acoustic wave (SAW) filter material for high-frequency signal processing of mobile phones, but there are two main problems in the manufacture of SAW filter devices with the LT substrate, which will lead to a decrease in the yield of the device, Increase production costs. First, due to the high light transmittance of the LT substrate, in the photolithography process, one of the SAW device manu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00C30B29/30
CPCC30B29/30C30B33/00H10N30/8542H03H3/08H03H9/02559H03H9/02622H03H9/64
Inventor 陈铭欣杨胜裕刘明章林飞吴柯宏
Owner FUJIAN JING AN OPTOELECTRONICS CO LTD
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