347 results about "Lithium tantalate" patented technology

A holographic recording medium exhibiting a high recording sensitivity without execution of reduction treatment. A system records information on the holographic recording medium by using a gating light within a wavelength band causing less optical damage to the holographic recording medium. The holographic recording medium includes a single crystal of lithium niobate (LiNbO₃) or lithium tantalate (LiTaO₃) containing Mn as a dopant.

The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.

The present invention is directed to a higher power, thin film lithium-ion electrolyte on a metallic substrate, enabling mass-produced solid-state lithium batteries. High-temperature thermodynamic equilibrium processing enables co-firing of oxides and base metals, providing a means to integrate the crystalline, lithium-stable, fast lithium-ion conductor lanthanum lithium tantalate (La_1/3-xLi_3xTaO₃) directly with a thin metal foil current collector appropriate for a lithium-free solid-state battery.

To provide a wafer, made from a lithium tantalate single crystal or a lithium niobate single crystal, wafer which is charge restrained without impairing the piezoelectricity. Moreover, to provide a processing method and a processing apparatus therefor. It is characterized in that a wafer 50, made from a lithium tantalate single crystal or a lithium niobate single crystal, and a reducing agent 60, including an alkali metal or an alkali metal compound, are accommodated in a processing tank 2, and the inside of the processing tank 2 is held at a temperature of from 200° C. or more to less than a Curie temperature of the single crystal under decompression, thereby reducing the wafer 50.

The invention discloses a composite single crystal thin film and a method for manufacturing the composite single crystal thin film. The composite single crystal thin film comprises a substrate, an optical isolation layer, a lithium niobate single crystal thin film or a lithium tantalate single crystal thin film and a silicon thin film, wherein the optical isolation layer is located on a substrate; the lithium niobate single crystal thin film or the lithium tantalate single crystal thin film is located on the optical isolation layer; and the silicon thin film is located on the lithium niobate single crystal thin film or the lithium tantalate single crystal thin film. The composite single crystal thin film disclosed by the invention has good nonlinear optical effect, acousto-optical effect, electro-optic effect and the like of a lithium niobate or lithium tantalite material, and simultaneously has the characteristic of a mature processing technology of a silicon material, so that the composite single crystal thin film disclosed by the invention can achieve relatively good compatibility with an existing IC production technology and has a broad industrial prospect. In addition, stable and effective industrial production can be achieved according to the method for manufacturing the composite single crystal thin film disclosed by the invention.

A composite substrate 10 includes: a piezoelectric substrate 12 capable of transmitting an elastic wave and composed of lithium tantalate (LT); a silicon support substrate 14 that is bonded to the rear surface of the piezoelectric substrate in the (111) plane; and an adhesive layer 16 bonding the substrates 12 and 14 to each other.

In order to provide a surface acoustic wave device provided with a pseudo-single crystal aluminum electrode film, having excellent power durability, easy to manufacture, and possible to grow with good reproducibility, a titanium buffer film 4 and an electrode film composed of an aluminum film or an aluminum alloy film are formed on a piezoelectric substrate 2 composed of lithium tantalate or lithium niobate. The electrode film 5 comprises a pseudo-single crystal film composed of two (111) domains. Each of the <111> directions of two (111) domains tilts in the range of 0 to 10 degrees to the substrate surface, and the <11-2> directions in the respective (111) domain planes are 1 to 15 degrees apart.

A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.

A Love wave sensor uses a single-phase unidirectional interdigital transducer (IDT) on a piezoelectric substrate for leaky surface acoustic wave generation. The IDT design minimizes propagation losses, bulk wave interferences, provides a highly linear phase response, and eliminates the need for impedance matching. As an example, a high frequency (˜300-400 MHz) surface acoustic wave (SAW) transducer enables efficient excitation of shear-horizontal waves on 36° Y-cut lithium tantalate (LTO) giving a highly linear phase response (2.8° P-P). The sensor has the ability to detect at the pg/mm² level and can perform multi-analyte detection in real-time. The sensor can be used for rapid autonomous detection of pathogenic microorganisms and bioagents by field deployable platforms.

A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.

The invention discloses a method for processing a lithium niobate or lithium tantalate wafer, which comprises the following steps: respectively placing the lithium niobate or lithium tantalate wafer to be processed into a crucible; adding iron powder and lithium carbonate powder evenly mixed in advance according to mass proportion to completely cover the wafer; placing a corundum crucible into a thermal treatment furnace; performing thermal treatment for 3-20 hours at 450-550 DEG C under the nitrogen atmosphere with the flow rate of 0.5-1L/min to prepare a finished product of the lithium niobate or lithium tantalate wafer. The wafer resistivity is at the magnitude order of between 10 and 10, compared with the conventional non-processed wafer, the resistivity is greatly reduced, the method can effectively prepare a wafer needed for a SAW device through the thermal treatment in a short time, and increase a finished product ratio in the manufacture process of an element, therefore, the method for processing lithium niobate or lithium tantalite wafer becomes an industrialized optimizing method.

The present invention relates to a lithium tantalate film infrared detector and the preparing method thereof. The invention comprises the following components: an infrared filtering window, a resonance chopped wave modulator, a focusing lens, a pyroelectric lithium tantalate film infrared measuring probe, a heat sink cavity, a preamplifier, a low-pass filter, an electric power and signal output interface, a casing and an environment temperature detecting filter. The method for preparing the detector comprises the following steps: selecting a substrate, growing a SiO2 layer on the front and back surface, depositing Si3N4 layer on the front surface in sequence, sputtering a Ti layer, sputtering a photoetching Pt electrode layer, producing a lithium tantalate film layer, depositing a phototeching Al electrode layer, growing a photoetching SiNX antireflection layer and sputtering a black layer to complete the double unit structure infrared probe. The focusing lens is coated with an anti-reflection film. The infrared window is pasted with a narrowband filtering film. The preamplifier is built with a JFET tube or operational amplifier. The low-pass filter is built with an operational amplifier. The resonance chopped wave modulator is driven by piezoelectricity or electromagnet, and the resonance frequency is 1Hz-1000Hz.

The invention relates to a blackening method for a lithium tantalate or lithium niobate crystal substrate. The method comprises the following steps: preparing a mixed system from an elemental material with deoxidation ability and a mixture of a glue and a certain proportion of lithium carbonate powder; uniformly coating both sides of a to-be-treated lithium tantalate or lithium niobate crystal substrate by using a screen printing method; and placing the substrate in a stainless steel container, then putting the container into a heat treatment furnace, and carrying out reduction treatment on the to-be-treated lithium tantalate or lithium niobate crystal substrate in a nitrogen atmosphere with a flow of 6 L/min to 10 L/min under and at a temperature below the Curie temperature of the to-be-treated lithium tantalate or niobate crystal substrate. In the mixed system, organic silicone glue is used as glue; and the elemental material with deoxidation ability is Zn powder which accounts for 35% or less of the mass of the mixed system. According to the invention, reduced blackening treatment of the lithium tantalate or lithium niobate crystal substrate is carried out under Curie temperature conditions; and through blackening treatment, the pyroelectric properties of the substrate is reduced, and thus, manufacturing cost for a SAW filter is lowered and the production efficiency of the SAW filter is improved.

A periodically poled second harmonic generating crystal having a long axis, said crystal comprising Magnesium Oxide doped Congruent Lithium Niobate, Magnesium Oxide doped Stoichiometric Lithium Niobate, Stoichiometric Lithium Tantalate or Potassium Titanyl Phosphate wherein the poling planes of said periodically poled crystal are canted relative to said axis and a doubled, external cavity laser utilizing said crystal, comprising an external cavity pump laser section and an extra-cavity frequency doubling section.

A process for reducing the poling field of congruent grown LiNbO₃ and LiTaO₃ crystal-based nonlinear optical devices and for the production of domain structures with precise reproducibility of the main parameters by depositing a thin layer of a stechiometric LiNbO₃ film on the Z-face of a congruent LiNbO₃ or LiTaO₃ wafer. A new domain nucleation, evolution and stabilization process is provided to afford a uniform, short period domain superstructure for the conversion of near infra-red light to near ultraviolet, blue and green light

A method of producing a lithium-tantalate crystal, wherein at least a first material containing lithium tantalate, lithium niobate or hydrogen storage alloy storing hydrogen that is subjected to a heat treatment at a temperature of T1′ that is Curie temperature or higher in a reducing atmosphere is superposed on a single-polarized lithium-tantalate crystal, and then the crystal is subjected to a heat treatment at a temperature of T2′ that is lower than Curie temperature in a reducing atmosphere, thereby an electric conductivity of the single-polarized lithium-tantalate crystal is increased. There can be provided a method of producing a lithium-tantalate crystal wherein the surface charge generated by applying a temperature change to the lithium-tantalate crystal can be decayed quickly without accumulating by increasing the electric conductivity, and an effective piezoelectric property is exhibited by maintaining the single polarized structure.

A modulator includes an interferometer waveguide structure formed on an electro-optical substrate, preferably a Z-cut lithium niobate or a Z-cut lithium tantalate. The substrate includes a domain inversion between a region near the first arm and a region near the second arm of the interferometer waveguide structure. In one example, two coplanar strip electrode structures, each extending near at least a portion of the first arm and the second arm, respectively, are electrically coupled to each other.

A technical process for manufacturing a monocrystal lithium niobate thin film or a monocrystal lithium tantalate thin-film material. After bonding of wafers, reduction of crystal lattice intensity of a damage layer caused by ion implantation and differences of thermal expansion coefficients between a silicon dioxide layer and a lithium niobate (lithium tantalate) crystal are utilized to select an appropriate heat treatment process and form stress in wafer set, so as to strip the film. The process can substantially reduce ion implantation dosage, thereby reducing production cost and increasing film quality.