124 results about "Lithium tantalate" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention relates to a thin film electro-optical crystal-silicon nitride heterogeneous integrated N * N high-speed optical switch array and a preparation method thereof. The thin film electro-optical crystal-silicon nitride heterogeneous integrated N * N high-speed optical switch array is formed by connecting 1 * 2 or 2 * 2 Mach-Zehnder high-speed optical switch units according to a certain topological structure. Wherein the high-speed optical switch unit is composed of a silicon nitride passive waveguide and a thin-film electro-optical crystal / silicon nitride heterogeneous integrated phase shift region. Comprising but not limited to thin-film lithium niobate, thin-film lithium tantalate, barium titanate and lead zirconate titanate is integrated above the silicon nitride phase shifting arm through a micro transfer printing method to form a heterogeneous integrated phase shifting region. The large-scale high-speed optical switch array with excellent performance is realized by combining the characteristics of ultra-low loss, CMOS compatibility, thermal stability and the like of a silicon nitride material, the characteristics of low power consumption, low loss, high-speed modulation and the like of a thin film electro-optical crystal and the advantages of high flexibility, parallel integration, low cost, low loss and the like of a micro transfer printing method.

An interface for an optical modulator and the optical modulator are described. The interface includes first and second differential line pairs. The first differential line pair has a first negative line and a first positive line arranged on opposing sides of a first waveguide. The first negative line is on a distal side of the first waveguide relative to a second waveguide. The first positive line is on a proximal side of the first waveguide relative to the second waveguide. The second differential line pair has a second negative line and a second positive line arranged on opposing sides of the second waveguide. The second negative line is on a distal side of the second waveguide relative to the first waveguide. The second positive line is on a proximal side of the second waveguide relative to the first waveguide. The first and second waveguides each include lithium niobate and / or lithium tantalate.

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and / or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.

An acoustic wave device includes a support substrate, a multilayer body, and an IDT electrode. The multilayer body includes a lithium tantalate piezoelectric layer and a lithium niobate piezoelectric layer that are laminated, and is on the support substrate. The IDT electrode is on the multilayer body, and includes electrode fingers. When a wavelength of an acoustic wave determined by a pitch of the electrode fingers is denoted as λ, a thickness of the multilayer body is about 0.66λ or less.

An acoustic resonator includes a substrate, a lithium tantalate layer disposed over the substrate, and a transducer on the lithium tantalate layer. The lithium tantalate layer has a crystalline orientation defined by a first Euler angle (λ), a second Euler angle (μ), and a third Euler angle (θ), and the first Euler angle (λ), the second Euler angle (μ), and the third Euler angle (θ) are chosen such that an acoustic plate mode (APM) is a dominant mode excited in the acoustic resonator.

This application discloses a method and device for fabricating a periodically polarized ultrathin lithium niobate / lithium tantalate device, belonging to the field of nonlinear optical device manufacturing. The method includes: fabricating and polarizing periodic electrodes on a provided ferroelectric crystal wafer to form a periodically polarized master wafer; bonding the master wafer to a carrier substrate using optical resin-assisted bonding or direct bonding to form a composite structure; thinning and polishing the side of the master wafer away from the carrier substrate to obtain an ultrathin periodically polarized crystal functional layer; and fabricating the structure of the ultrathin periodically polarized crystal functional layer to obtain a periodically polarized ultrathin lithium niobate / lithium tantalate device. This method avoids the inherent problems of high-voltage breakdown and poor domain quality in existing technologies when directly polarizing ultrathin crystals by placing the high-risk polarization step on a thick, stable wafer.

The application discloses a heat treatment device for high-concentration magnesium-doped lithium tantalate single crystal growth, and relates to the field of high-concentration magnesium-doped lithium tantalate single crystal growth. The heat treatment device comprises a base, a tank body is arranged at the bottom of the base, a quartz crucible is arranged in the tank body, a circular ring plate is arranged at the top of the quartz crucible, a sliding groove is arranged on the inner wall of the circular ring plate, a wedge-shaped block is arranged in the sliding groove, a ring-shaped block plate is arranged at the tail end of the wedge-shaped block, a second threaded ring is fixed to the top inside the circular ring plate, the second gear drives the first threaded ring to rotate, the first threaded ring drives the second threaded ring to move downwards, the second threaded ring drives the circular ring plate to move downwards, the bottom of the circular ring plate extrudes the liquid after high-temperature dissolution in the quartz crucible, and the steam pocket in the liquid is extruded out.

To provide a composite wafer in which an LT film or an LN film having a high thermal expansion coefficient is laminated on a support substrate having a low thermal expansion coefficient, and which can reduce spurious caused by reflection of an incident signal on a bonding interface between the LT film or the like and the support substrate, and to provide a method of manufacturing the same.SOLUTION: A method for producing a composite wafer according to an embodiment of the present invention includes a step of performing ion implantation into a single crystal wafer serving as a support substrate, a step of performing surface activation treatment on one or both of a piezoelectric wafer of lithium tantalate or lithium niobate and the single crystal support substrate, and a step of thinning the piezoelectric wafer after bonding.SELECTED DRAWING: Figure 5

The application relates to the technical field of battery diaphragm, and discloses a lithium ion battery diaphragm with high viscosity and high safety, which is prepared from the following components in parts by weight: 15-20 parts of polyolefin, 80-85 parts of pore-forming agent and 2-4 parts of filler; the viscosity average molecular weight of the polyolefin is 1-4 million; the raw material of the filler comprises component A and component B in a mass ratio of 1:19-19:1; the component A comprises barium stearate; and the component B comprises one or more of lithium molybdate, lithium tungstate and lithium tantalate. Through the technical scheme, the problem of low strength of the lithium battery diaphragm in the related art is solved.

The invention belongs to the technical field of semiconductors, and particularly relates to a lithium niobate / lithium tantalate thin film doped with active ions and a preparation method of the lithium niobate / lithium tantalate thin film. The thin film comprises a substrate, an isolation layer, a passive thin film layer and an active thin film layer which are stacked from bottom to top, wherein the passive thin film layer and the active thin film layer are respectively made of lithium niobate and lithium niobate doped with active ions, or lithium tantalate and lithium tantalate doped with active ions. Through the specific layer structure design, the lithium niobate / lithium tantalate passive and active photonic device monolithic integrated thin film which is low in loss and reliable in bonding is obtained.

The utility model relates to an end effector of a lithium tantalate single crystal rod transplanting robot, which comprises a driving air cylinder, a first clamping piece, a second clamping piece, a first sliding block, a second sliding block and a sliding rail, the sliding rail is fixedly arranged on the driving air cylinder, the first sliding block and the second sliding block are connected to the sliding rail in a sliding mode, and the first clamping piece and the second clamping piece are fixedly arranged on the driving air cylinder. The driving air cylinder is connected with the first sliding block and the second sliding block, so that the driving air cylinder drives the first sliding block and the second sliding block to move on the sliding rail; the first clamping piece and the first sliding block are fixedly installed together, and the second clamping piece and the second sliding block are fixedly installed together, so that the driving air cylinder drives the first clamping piece and the second clamping piece to be close to each other or away from each other. When the first clamping piece and the second clamping piece are close to each other, the first clamping piece and the second clamping piece are used for clamping a lithium tantalate single crystal rod.

An apparatus for a surface acoustic wave (SAW) device having an aluminum nitride substrate layer is disclosed. In one aspect, a SAW includes: a substrate layer comprising an aluminum nitride (AlN) substrate layer, an electrode structure including interdigitated transducers, and a piezoelectric layer disposed between the electrode structure and the substrate layer. In some aspects, the piezoelectric layer is lithium niobate or lithium tantalate.

The invention discloses a high-speed and high-extinction-ratio cascade MZI (Mach Zehnder Interferometer) electro-optical switch based on an electro-optical material. According to the electro-optical switch, a plurality of MZI structures are cascaded and integrated on an electro-optical material platform (such as lithium niobate or lithium tantalate) with an ultra-wide optical transparent window, and the initial phase error of each modulation arm is subjected to thermo-optical calibration by utilizing the refractive index change of an electro-optical material caused by temperature regulation and control; therefore, the consistency and long-term stability of the initial phase of the cascaded MZI are ensured. After thermo-optical phase calibration is completed, electro-optical refractive index regulation and control can be carried out on a plurality of phase modulation arms of the cascaded MZI at the same time only by applying a single driving voltage, and optical switch switching with the ultrahigh extinction ratio is achieved. The device has a pre-calibration function, a working point is stable and does not drift after calibration, and high-speed and high-extinction-ratio switching can be achieved only through a high-speed signal; and meanwhile, the device has the advantages of simple structure, flexible design, easiness in cascade expansion, low requirement on technological parameter tolerance and the like.

The invention discloses a preparation method and application of a thin-film lithium niobate / lithium tantalate photoelectric device, and belongs to the technical field of manufacturing of photoelectric devices. The preparation method comprises the following steps: providing a wafer, wherein the material of the wafer is selected from lithium niobate and / or lithium tantalate; preparing at least one layer of silicon nitride optical waveguide structure on one surface of the wafer, wherein the silicon nitride optical waveguide structure is formed by a deposited silicon nitride film through micro-nano processing preparation; bonding one surface, with the silicon nitride optical waveguide structure, of the wafer on a planar substrate; and sequentially performing grinding thinning, ion modification and polishing on one surface, deviating from the silicon nitride optical waveguide structure, of the wafer to form a thin film wafer. According to the method, an efficient and high-quality processing mode is provided for manufacturing of related photoelectric devices, ferroelectric material etching and ion implantation processes are avoided, the performance of thin-film lithium niobate and lithium tantalate photoelectric devices can be effectively improved, and the method has the advantages of being simple in process, excellent in performance, economical in manufacturing and wide in application prospect.

The application discloses a cleaning method of lithium tantalate wafer, which comprises the following steps: soaking and cleaning the polished lithium tantalate wafer in an acid solution; performing ultrasonic cleaning in plasma-activated water; performing ultrasonic cleaning in an acid solution tank; and brushing the wafer on both sides. The application avoids wafer cracking caused by excessive thermal stress due to excessive temperature difference or excessively high temperature in the cleaning process through process improvement, improves the cleaning effect of the lithium tantalate wafer by setting ultrasonic plasma-activated water cleaning, using specific cleaning liquid and matching the use method of the cleaning liquid and ultrapure water, and ensures the surface cleanliness.

Provided is an acoustic resonator in a transverse excitation shear mode. The acoustic resonator comprises: an acoustic mirror (120), which comprises at least one first acoustic reflecting layer (121, 123, 125) and at least one second acoustic reflecting layer (122, 124), wherein the acoustic impedance of each first acoustic reflecting layer is less than that of each second acoustic reflecting layer; a piezoelectric layer (130), which is arranged on the acoustic mirror, and which comprises lithium niobate of a single crystal material and / or lithium tantalate of a single crystal material; electrode units (142, 143, 144), which are arranged on the piezoelectric layer (130) and are used for forming an electric field; and transverse reflectors (152, 154), which are arranged on the piezoelectric layer, are used for transversely reflecting acoustic waves, and can have a high electromechanical coupling coefficient and a high Q value at a frequency greater than 3 GHz.

The invention discloses a green synthesis method and application of a doped single crystal material based on a rapid Joule thermal method, and the green synthesis method comprises the following steps: S1, pretreating an initial single crystal to obtain a pretreated initial single crystal, the initial single crystal being selected from a lithium niobate single crystal or a lithium tantalate single crystal; s2, performing all-directional coating on the initial single crystal pretreated in the step S1 by using a metal foil to obtain the initial single crystal coated with the metal foil; and S3, placing the initial single crystal coated with the metal foil obtained in the step S2 on a clamp connected with a pulse power supply system, placing the clamp in a vacuum environment or an oxygen environment, applying current and voltage to the clamp through the pulse power supply system to enable the metal foil to generate Joule heat, keeping the temperature for a certain time, and cooling to prepare the metal-doped single crystal material. According to the technical scheme, the limitation of a traditional synthesis method in the aspects of energy consumption and doping uniformity is broken through, and high-efficiency and low-energy-consumption synthesis of the single crystal material with a controllable doping effect is realized.

The invention provides a single crystal thin film and a preparation method and application thereof. The single crystal thin film comprises a functional layer, a transition layer and a substrate which are sequentially stacked, wherein the material of the functional layer comprises at least one of lithium niobate single crystals and lithium tantalate single crystals; the absolute value of the difference between the lattice constant of the transition layer and the lattice constant of the functional layer is less than or equal to 5%; the absolute value of the difference between the lattice constant of the transition layer and the lattice constant of the substrate is smaller than or equal to 5%. The single crystal film provided by the invention not only has a relatively large size, but also is excellent in yield.

The invention discloses a lithium tantalate crystal growth device, and belongs to the technical field of crystal growth equipment.The lithium tantalate crystal growth device comprises a first supporting seat and a second supporting seat, a controller is installed on the first supporting seat, and a growth assembly for lithium tantalate crystal growth is fixedly connected to the first supporting seat; melt raw materials blended in proportion are contained in the growth assembly, and one side of the top of the first supporting base is further fixedly connected with a lifting assembly used for conducting lifting growth on crystals. The device has the remarkable advantages that raw materials are heated and melted through radio frequency and the spiral pipeline coil, meanwhile, laser focuses on a liquid surface capping position and is melted through, the swelling and melting risks are eliminated, the capping can be gradually melted, it is guaranteed that the melting process is safe and efficient, the laser irradiation position is continuously adjusted in the growth process, and the quality of the crystal in the initial growth stage is guaranteed; meanwhile, the melt is automatically supplemented through cooperation of the communicating pipe and the like, the stability of components in the crucible is maintained, and the continuity and stability of crystal growth are guaranteed.

This application discloses a fabrication process for a secondary-bonded lithium tantalate composite substrate and a flexible lithium tantalate composite substrate, belonging to the field of flexible ultrathin lithium tantalate wafer fabrication technology. The process includes the following steps: (1) ion implantation of a lithium tantalate wafer and pre-annealing of a substrate wafer; (2) activation and bonding of the implantation surface of the lithium tantalate wafer and the substrate wafer to obtain a first bond, and thinning the lithium tantalate wafer of the first bond to a thickness of 2-50 μm; (3) secondary bonding of the lithium tantalate wafer of the first bond to a flexible substrate to obtain a second bond; (4) annealing and peeling of the second bond to obtain a flexible lithium tantalate composite substrate and a heterogeneous thin-film bonded substrate. This method achieves permanent bonding between an ultrathin lithium tantalate wafer and a flexible substrate through a two-step bonding process, transforming the lithium tantalate wafer from a "fragile thin sheet" into a practical, integrable, and flexible lithium tantalate composite substrate suitable for flexible devices.

The application relates to the technical field of infrared induction, and discloses a lithium tantalate infrared induction network system, which comprises a substrate composed of a support substrate and an ultralow-thermal-conductivity thermal insulation layer, the support substrate is a silicon-based or sapphire-based material, the ultralow-thermal-conductivity thermal insulation layer is composed of a modified silica aerogel composite layer and is integrated with the support substrate through a low-temperature plasma bonding process; a lithium tantalate sensing module containing a first electrode layer, a lithium tantalate wafer and a second electrode layer; a signal transmission link for ensuring good electrical conductivity; an infrared absorption film for balancing the absorption efficiency and the mechanical stability of the film layer; a distributed module with a built-in adaptive noise suppression algorithm; through the ultralow-thermal-conductivity thermal insulation layer, heat loss to the environment is significantly reduced, and the thermal response performance of the detector is improved; through doping of zirconium oxide nanoparticles, a shielding layer is formed, infrared radiation is effectively shielded, and heat loss is further reduced.

The invention belongs to the technical field of semiconductor photoelectric device processes, and particularly relates to a graphene-lithium tantalate transistor long-wave infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a lithium tantalate film, a graphene layer, a source metal electrode, a drain metal electrode and a passivation layer, wherein the lithium tantalate film is located on the substrate; the source metal electrode and the drain metal electrode are arranged on the lithium tantalate film, a graphene layer is arranged on the lithium tantalate film between the source metal electrode and the drain metal electrode, and a passivation layer is arranged on the graphene layer. Graphene is introduced to a lithium tantalate film to form a ferroelectric field effect transistor structure, a vertical heterostructure of a silicon substrate, the lithium tantalate film and a graphene channel is constructed, and the excellent conductivity of graphene and the pyroelectric characteristic of lithium tantalate are utilized; the signal reading and amplifying capability and the pyroelectric response characteristic of the detector are remarkably improved, and an infrared detection unit device with high sensitivity and quick response capability is successfully prepared.

A frequency tunable scanning laser system includes: an external cavity diode laser (ECDL) configured to output laser light; an electro-optic deflector (EOD) being at least partially transparent and configured to deflect the laser light passing through the EOD; and a fixed, wavelength-sensitive diffraction grating configured to reflect at least a portion of the laser light deflected by the EOD back to the ECDL via the EOD at a tunable frequency. The tunable frequency is a function of an angle of incidence of the laser light on the grating, and the angle of incidence is based on an amount of deflection of the laser light by the EOD. In some examples, the EOD includes a lithium tantalate (LTA) crystal or a similar crystal. This configuration enables a low-phase noise laser system that is both steady and quickly tunable in frequency.

The invention discloses a low-temperature non-volatile interface polarization charge regulation and control method for a lithium niobate / lithium tantalate waveguide device, and aims to solve the problem of process errors of an existing photon chip by taking interface regulation and control as a core means. According to the technical scheme, the method comprises the steps that overall or local low-temperature heat treatment is conducted on a chip where the waveguide device is located, and the heat treatment temperature is far lower than the phase transformation point of a lithium niobate / lithium tantalate material; the low-temperature condition is used for ensuring that no phase change occurs in the material, so that the regulation and control effect is attributed to the change of polarization charges of a lithium niobate-silicon dioxide interface with weak stability or relatively low bond energy; after the heat treatment, the chip is subjected to an aging stabilization process to cure the new non-volatile interface state. According to the method, by means of mild heat treatment, lossless, efficient and nonvolatile regulation and control of the interface polarization charges are achieved. The change of the device performance is used as a key index for proving the interface regulation and control effect.

The application relates to the field of high-speed optical communication devices, in particular to a high-bandwidth double-slow-wave-electrode thin-film lithium tantalate electro-optic modulator. The lithium tantalate electro-optic modulator comprises, from bottom to top, a substrate layer, a bonding layer, a thin-film lithium tantalate layer, a cladding layer and an electrode layer. The electrode layer comprises a signal electrode, a first ground electrode, a second ground electrode and a plurality of periodically arranged double-slow-wave-electrode structures combined by sawtooth and T-shaped structures. The application solves the problem that the thin-film lithium niobate modulator is difficult to realize stable work in high-speed and high-power applications due to the inherent strong birefringence and photorefractive effect of the material, realizes the speed matching between the radio frequency signal and the optical carrier, solves the speed mismatching problem in the electro-optic modulator, and improves the electro-optic bandwidth of the modulator.

The present application relates to the technical field of piezoelectric crystal, and particularly relates to a roughening processing method for the back surface of an ultrathin lithium tantalate wafer, which comprises the following steps: a) protecting the front surface of the lithium tantalate wafer by pasting a film; b) heating and sandblasting abrasive, and baking the sandblasting abrasive; c) starting the rotation of a sandblasting platform, adjusting the distance between the sandblasting gun and the lithium tantalate wafer, adjusting the sandblasting pressure to 0.2-0.3 Mpa, and performing first roughening processing on the back surface of the wafer; d) after the first roughening processing is completed, removing the sandblasting particle residues attached to the surface of the wafer, readjusting the sandblasting pressure to 0.1-0.15 Mpa, and performing second roughening processing on the back surface of the wafer; e) after the second roughening processing is completed, immersing the wafer in a mixed solution tank of hydrofluoric acid and nitric acid, then immersing the wafer in a warm water tank for ultrasonic cleaning, then immersing the wafer in a normal temperature tank for ultrasonic cleaning, and finally immersing the wafer in an overflow tank to complete wafer cleaning.

The invention relates to an optical amplifier of a silicon-based lithium tantalate waveguide doped with rare earth elements and a preparation method. The optical amplifier comprises an upper cladding, a gain layer, a bonding layer, a buffer layer and a silicon-based substrate which are sequentially stacked, wherein the gain layer adopts lithium tantalate doped with rare earth ions; and a ridge-shaped waveguide structure is formed on the surface, close to the upper cladding, in the gain layer. According to the invention, the problem of poor integration compatibility of the lithium tantalate waveguide and the silicon-based substrate in the prior art can be solved.

Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed. The method of manufacturing a composite substrate 10 equipped with a piezoelectric single-crystal film 11 according to the present invention includes the steps of: (a) subjecting a piezoelectric single-crystal substrate 1 made of lithium tantalate or lithium niobate to ion implantation treatment to form an ion implantation layer 11, (c) bonding the surface of the piezoelectric single-crystal substrate 1 having the ion implantation layer 11 thereon to a temporary bonding substrate 2, (d) separating the piezoelectric single-crystal substrate 1 into the ion implantation layer 11 and the remaining portion of the substrate to form a piezoelectric single-crystal film 11 on the temporary bonding substrate 2, (f) bonding a supporting substrate 3 to the surface of the piezoelectric single-crystal film 11 opposite to a bonded surface of the temporary bonding substrate, and (g) separating the temporary bonding substrate from the piezoelectric single-crystal film 11.

The present invention relates to a method of manufacturing a piezoelectric on insulator (POI) structure, the method comprising: providing a donor substrate comprising a piezoelectric substrate, wherein the piezoelectric substrate comprises or consists of one of lithium tantalate and lithium niobate; transferring a piezoelectric layer from the piezoelectric substrate to a target substrate; and polishing the piezoelectric layer transferred to the target substrate using a chemical mechanical polishing (CMP) slurry, wherein the CMP slurry consists of an aqueous suspension of amorphous silicon, wherein the weight percentage of amorphous silicon is in the range of 4% to 18%.