The invention relates to the technical field of micro-nano electronic integrated circuits, and provides an integrated balanced three-valued phase
inverter and a circuit of a
hybrid memristor CMOS (Complementary
Metal Oxide Semiconductor), which realize higher integration density and area efficiency, remarkably reduce static
power consumption, inhibit
signal attenuation during cascading and ensure
reliable transmission of a multi-stage logic chain by adopting back-end integration of the
memristor and the
CMOS, so that the reliability of the integrated balanced three-valued phase
inverter of the
hybrid memristor CMOS is improved, and the service life of the integrated balanced three-valued phase
inverter of the
hybrid memristor CMOS is prolonged. And compared with the traditional design, the number of devices is reduced, the
power consumption is lower, the integration level is high, and the practical logic unit with high performance and low
power consumption is realized. A standard
CMOS process and the memristor integrated in the later stage are adopted, an additional
mask layer is not needed for memristor preparation, the memristor can be directly introduced into an existing
integrated circuit production line, and the industrialization cost is reduced; the three-valued phase inverter is compatible with an existing EDA tool, can be used for directly replacing a three-valued phase inverter in a traditional
integrated circuit, has nonvolatile storage and logical operation capacity, and is adaptive to various application scenes such as storage and calculation integration and neuromorphic calculation.