284 results about "Analog chip" patented technology

The present invention relates to a multi-functional integrated circuit chip testing machine which comprises the following components: a casing, an inner testing machine mainboard, an AC signal card group and a DC signal card group. The AC signal card group and the DC signal card group are connected with each other and are respectively installed on the testing machine mainboard. The testing machine mainboard is respectively connected with a PC controlled and a tested chip carrier plate. The multi-functional integrated circuit chip testing machine is technically characterized in that the testing machine mainboard is also installed with a digital/analog chip testing card and an analog/digital chip testing card. The multi-functional integrated circuit chip testing machine of the invention is reasonably designed, realizes the test function to different types of integrated circuit chip, reduced device investment of the integrated circuit manufacturer and saves the operation and maintenance cost of the device. Furthermore the multi-functional integrated circuit chip testing machine of the invention has the characteristics of wide testing range, stable performance, high testing speed, high efficiency, flexible and convenient using, etc.

A bridge fault modeling and simulation apparatus including a neural network simulates the effects of bridge defects in complementary metal oxide semiconductor integrated circuits. The apparatus includes a multilayer feedforward neural network (MLFN), implemented within the framework of a very high speed integrated circuit hardware description language (VHDL) saboteur. The saboteur is placed between logic cells in the IC simulation. The apparatus computes exact bridged node voltages and propagation delay times with due attention to surrounding circuit elements. It results in faster simulation and achieves excellent accuracy.

A method of simulating parametric variations in an integrated circuit (IC) includes: specifying an IC model, wherein the IC model includes one or more parameters for variation about a nominal condition; calculating parametric perturbations about the nominal condition; and saving one or more values for the parametric perturbations in a computer-readable medium. Calculating the parametric perturbations includes: simulating the nominal condition for the IC; determining perturbation values for the IC model about the nominal conditions, wherein the perturbation values include linear time-varying matrices and parametric right-hand sides, determining a performance metric for the IC and a performance sampling vector for sampling the performance metric about the nominal condition from the perturbation values; and determining voltage-sensitivity values and performance-sensitivity values from the perturbation values and the performance-sampling vector.

The invention discloses a dynamic comparator with high speed and low kick noise, which belongs to the field of analog integrated circuits. Its structure includes: pre-amplification stage, current compensation branch for suppressing kickback noise, positive feedback regeneration stage composed of N-channel transistor and P-channel transistor cross-coupling unit, current between pre-amplification stage and positive feedback regeneration stage A control unit, a reset control unit, an offset calibration unit, and an inverter output driver stage. The two current compensation branches that suppress the kickback noise compensate the current attenuation of the main channel to ensure a constant working current of the input pair tube, thereby suppressing the influence of the kickback noise on the input signal, thereby increasing the size of the input pair tube and reducing offset voltage, increasing the response speed. Compared with the traditional comparator, the invention satisfies the requirement of high speed and low power consumption, and exhibits excellent kickback noise suppression ability.

The invention relates to the field of analog integrated circuit design. In order to provide an analog-to-digital converter (ADC) structure which has a simple structure and a short conversion cycle, and achieve the purpose of improving the dynamic scope of a sensor, the technical adopts the following technical scheme that: a realization device of a column-level ADC in complementary metal-oxide semiconductor (CMOS) image sensor comprises a single-slope ADC, a successive approximation ADC and two slope signal generators; the single-slope ADC, the successive approximation ADC and a group of six switches form a unit, and each column in a sensor pixel array is provided with the unit; and two slope signal generators are shared by each column of the sensor pixel array. The realization device of the column-level ADC in the CMOS image sensor is mainly applied in the design and manufacturing of the semi-conductor image sensor.

A technique for embedding a microprocessor into an integrated circuit allows on-chip testing and debugging. The microprocessor present on the chip tests and debugs the rest of the chip. Both testing and debugging of a programmable logic device use an embedded microprocessor. Testing is performed by the device manufacturer using a test system. Debugging is performed by a user using a host computer. A PLD includes programmable logic, an embedded microprocessor and separate memory. Testing or debugging routines, patterns, simulations, etc., are downloaded onto the memory. The microprocessor executes the test or debug routine and uploads results to the test system or host computer. The technique is applicable any integrated circuit that can include an embedded microprocessor and associated memory, such as a PLD, an ASIC, a memory chip, or an analog chip.

The performance of precision analog integrated electronic circuits is directly related to the degree of matching between electrical circuit elements. Any residual mismatch of circuit elements after manufacturing must be calibrated out using numerous techniques such as adjusting potentiometers, trimming capacitors, modifying binary-weighted resistor strings, etc. Prior art matching techniques entail the use of large area circuit elements or a large number of elements arranged in a prescribed manner on the surface of a silicon die to minimize the residual calibration. The present invention utilizes a multiplicity of circuit elements that are interconnected in distinct groups to achieve a higher degree of element matching and the ensuing benefits thereof. The elements are interconnected to yield a prescribed minimum mismatch error.

The invention provides a hardware real-time simulation multi-channel multi-type communication protocol chip system and method and a medium, and the system comprises a system interaction module which is used for completing the connection with a tested system and monitoring the control instruction of the tested system in real time; A PL logic module in the FPGA which is used for finishing hardware acceleration of the protocol chip; An ARM1 module in the FPGA which is used for realizing a multi-protocol chip function; The FPGA internal ARM0 module which is used for realizing interaction with an upper computer and realizing multi-protocol chip control and data interaction; And the upper computer software platform module which is used for realizing function customization of a multi-protocol chip and real-time data monitoring and control of an analog chip. A user can carry out customized simulation according to different chip manuals, control over information such as a chip register is completed through C codes, customized updating is completed through a system software platform, and convenience and flexibility are achieved.

A circuit simulation system for simulating an integrated circuit includes a circuit behavior analysis module analyzing behavior information of a circuit element of the integrated circuit based on connection information; a model selection module selecting a circuit element model corresponding to the circuit element from the library area based on location information and behavior information of the circuit element; a circuit generation module generating a to-be-analyzed circuit using the selected circuit element model; and a circuit simulation module executing the to-be-analyzed circuit simulation.

The invention discloses a high-precision multi-phase clock correcting circuit, belonging to the field of analog integrated circuit technology, and particularly relating to a multi-phase clock phase error correction circuit. The high-precision multi-phase clock correcting circuit disclosed by the invention aims to solve the problem that the existing traditional multi-phase clock generator has clock delay errors due to non-ideal effects; a traditional multi-phase clock generation circuit generates a multi-phase clock by using a multi-level delay chain, and errors are caused by the mismatch between the delay units; and the high-precision multi-phase clock correcting circuit is beneficial to reduce the power consumption and save the chip area, is high in clock phase detection precision and easy to implement, is high in adjustment precision of the clock delay units, adopts the code values of digital codes to correspond to the delay size, ensures that the clock accuracy of the clock correction module depends on the feedback adjustment accuracy and the detection accuracy of the clock phase errors, and ensures that the high-precision multi-phase clock can be achieved.

The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor (120) portion of an analog integrated circuit (115) to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit (115) to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.

The invention provides a portable ultrasonic imaging system receiving front-end device which is used for receiving and processing echo signals input by an ultrasonic transducer. The portable ultrasonic imaging system receiving front-end device is characterized by comprising sending and receiving isolated gate circuits which are connected in series sequentially, a front-end analog chip and a field programmable gata array (FPGA) main control unit. Optimized diode bridge circuits are adopted in the sending and receiving isolated gate circuits and the sending and receiving isolated gate circuits are controlled by the FPGA main control unit, each optimized sending and receiving isolated diode bridge circuit is connected with a transducer array element directly, wherein the optimized diode bridge circuits are provided with two inductances which are in a serial connection with the direct circuit bias access, and the specific circuit is characterized in that one ends, connected with the diode bridge, of a first bias resistance (R1) and a second bias resistance (R2) of the diode bridge circuit are respectively serially connected with a first inductance (L1) and a second inductance (L2), wherein the ranges of the first inductance and the second inductance are from several microhenries to hundreds of microhenries, and the portable ultrasonic imaging system receiving front-end device is powered by a single power supply.

A system and device for solving sparse algorithms using hardware solutions is described. The hardware solution can comprise one or more analog devices for providing fast, energy efficient solutions to small, medium, and large sparse approximation problems. The system can comprise sub-threshold current mode circuits on a Field Programmable Analog Array (FPAA) or on a custom analog chip. The system can comprise a plurality of floating gates for solving linear portions of a sparse signal. The system can also comprise one or more analog devices for solving non-linear portions of sparse signal.

An integrated semiconductor device comprising an analog integrated circuit or mixed signal integrated circuit having a capacitor, wherein the dielectric film of the capacitor is a laminated film consisting of a first dielectric film essentially composed of aluminum oxide and a second dielectric film essentially composed of crystallized niobium oxide. This integrated semiconductor device is small in size and has a low temperature coefficient and high reliability. The niobium oxide is crystallized to increase its dielectric constant and reduce its loss. To reduce the temperature coefficient, the film thickness ratio of the aluminum oxide layer to the niobium oxide layer is set to 0.2 to 1, preferably 0.4 to 0.7.

The invention discloses an operational-amplifier-free band-gap reference circuit with a pre-voltage-stabilizing structure, and solves the problems in the prior art that the power supply rejection ratio is low and the offset voltage is high. The operational-amplifier-free band-gap reference circuit comprises a band-gap core unit (1), an output unit (2), a voltage pre-stabilizing unit (3) and a starting unit (4). The band-gap core unit generates a negative temperature coefficient voltage VBE and a positive temperature coefficient voltage delta VBE; the output unit generates band-gap voltage VBGand zero temperature coefficient voltage VO; the pre-voltage-stabilizing unit generates stable pre-adjusting voltage VREG by detecting feedback voltage VFB and supplies power to the band-gap core unit. The starting unit detects the bias voltage VBIAS outputted by the pre-voltage-stabilizing unit and outputs a starting signal Vstart to the pre-voltage-stabilizing unit. The pre-voltage-stabilizing structure is adopted so that the power supply rejection ratio of reference voltage is increased; the operational amplifier structure is not adopted, and the influence of offset voltage on reference voltage is weakened. The circuit is simple in structure and can be used for an analog integrated circuit.

The invention provides a grid voltage bootstrap switch circuit, and belongs to the field of analog integrated circuits. A charge pump circuit is used for charging a fifth capacitor and a sixth capacitor to make the stored charge amounts be constant, a grid voltage boosting circuit and a grid voltage reducing circuit are used for changing the grid voltages of an NMOS switch tube and a PMOS switch tube to maintain the grid voltages as constant values, and a switching circuit is used for controlling the charging of the charge pump circuit and the opening and closing of the grid voltage boosting circuit and the grid voltage reducing circuit. The grid voltage bootstrap switch circuit provided by the invention uses the NMOS switch tube and the PMOS switch tube to connect input signals to the output at the same time, thereby reducing the on-resistance of the switch; by using a parallel connection mode of the NMOS switch tube and the PMOS switch tube, the channel charge injection effects of the NMOS switch tube and the PMOS switch tube caused by clock changes cancel each other, and the clock feedthrough effects cancel each other as well, thereby improving the linearity of the switch; and by using a diode to charge the capacitor, the circuit does not have an overvoltage device, thus improving the reliability of the circuit.

The invention discloses a single power electric level shift circuit with a digital filtering function. The single power electric level shift circuit with the digital filtering function mainly resolves the problems that an existing electric level shift circuit is too large in static power consumption, fluctuating in output voltage and difficult in multi-power-signal transmission. The electric level shift circuit comprises source drain interchange circuits (1), a single power supply circuit (2), a schmitt trigger (3), an electric level shifter (4) and a digital filter (5). The source drain interchange circuits (1) output voltage signal V1 and are respectively connected on the schmitt trigger (3) and the electric level shifter (4). The single power supply circuit (2) provides voltage control signal V4 for the schmitt trigger (3). The schmitt trigger (3) provides voltage control signal V2 for the electric level shifter (4). The electric level shifter (4) provides voltage signal V3 for the digital filter (5). The digital filter (5) outputs voltage signal V OUT. According to the single power electric level shift circuit with the digital filtering function, the stability of output voltage is improved, the static power consumption is reduced, the accuracy of electric level transformation is improved and sharp plus interference waves are removed by filtering. The single power electric level shift circuit with the digital filtering function can be used for an analogue integrated circuit.

The exemplary embodiments of the invention provide a method, system and software for developing and simulating an integrated circuit architecture. An exemplary method includes inputting an algorithm using an instruction language having control information; decomposing the algorithm to a plurality of tasks; for each task of the plurality of tasks, determining and combining data flow, control flow, and memory flow to form a flow transform of a corresponding plurality of flow transforms; connecting the plurality of flow transforms using a FIFO memory interconnect between each flow transform to provide an algorithm representation; and simulating the connected flow transforms. The method may be repeated at different levels of abstractions and utilizing different types and mixes of computational elements implementing the flow transforms. Hardware description and models of the computational elements may also be generated, including corresponding control bits for control of computational elements selected to implement a corresponding flow transform.

The invention relates to an electric leading-out structure of a sensor chip to be detected and an application thereof. The sensor chip (16) to be detected is provided with a pad (9) and a metal welding point (10) located on the pad (9). The electric leading-out structure further comprises a flexible substrate (14) provided with the pad and an interconnecting line. The sensor chip to be detected is reversely welded on the pad of the flexible substrate (14) through the welding point (10). Electric lead-out is realized through a welding line (15) by the pad of the flexible substrate (14). According to the invention, electric lead-out of a stress/temperature sensor is realized through the flexible substrate, and then the sensor with electric lead-out is used as an analog chip which is packaged by a packaging technique to be detected. The stress led in by the packaging technique can be obtained by measuring stress changes before and after packaging. The method of electric lead-out through the flexible substrate solves the problem that the stress sensor for packaging is hard to calibrate before packaging. The sensor is further used to measure the packaging stress and temperature in real time online.