1460results about "Logic circuits coupling/interface using field-effect transistors" patented technology

An image sensor, a level shifter circuit, and an operation method thereof are provided. The image sensor includes a pixel circuit and a pixel driving circuit. The pixel driving circuit includes first, second, third, fourth, fifth, and sixth transistors. A first terminal of the first transistor is coupled to a first voltage. A first terminal of the second transistor is coupled to the first voltage, and a control terminal of the second transistor is coupled to a control terminal of the first transistor and a second terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor, and a second terminal of the third transistor is coupled to a ground voltage. A first terminal of the fourth transistor is coupled to a second terminal of the second transistor and an output terminal.

An interface circuit includes a reference voltage generation circuit to generate a reference voltage, a differential voltage signal generation circuit to convert send data input in sending data into a pair of differential voltage signals and output the pair of differential voltage signals based on the reference voltage generated by the reference voltage generation circuit, a receiver to convert a pair of differential voltage signals input in receiving data and output received data, and a receiver test circuit to perform a sensitivity test of the receiver, the receiver test circuit having a resistance circuit to generate a pair of differential voltage signals having a potential difference being necessary for the sensitivity test of the receiver.

The invention discloses a high-voltage level conversion circuit with a symmetric pulse current structure, which belongs to the technical field of integrated circuits and comprises a level conversion module, a symmetric pulse current auxiliary module and a latch output module. According to the level conversion module, the defect that in the prior art, when the voltage of a power supply jumps rapidly, a circuit may be triggered by mistake is overcome, and the immunity of the circuit is improved. According to the symmetrical pulse current auxiliary module, the defect that transmission delays at the rising edge and the falling edge of an input signal are asymmetric in the prior art is overcome, so that the symmetrical pulse current auxiliary module keeps high transmission delay symmetry while ensuring a high transmission speed; and the problem of possible distortion of digital signal input and output in a high-speed circuit is effectively suppressed.

A structure includes a level shifter, first and second variable voltage generators, and a programmable voltage generator. The level shifter includes low and high supply voltage nodes and two parallel branches, including multiple transistors, connected between the nodes. The programmable voltage generator generates and applies a high supply voltage (VH) to the high supply voltage node. VH is programmable to one of multiple possible VH levels. Based on the voltage level of VH, the first variable voltage generator generates and applies a low supply voltage (VL) to the low supply voltage node and the second variable voltage generator generates and applies a gate bias voltage (VGB) to gates of some transistors. By tracking VH and adjusting VL and VGB based on thereon, the voltage level shifter operates within the SOA at high VHs, remains operable at low VHs, and maintains operating speed at mid-level VHs.

An ultra-low power consumption and high speed level shift circuit and method based on subthreshold conduction comprises an input shift circuit and a low power consumption output buffer, the input shift circuit comprises a pull-up network, a pull-down network and a feedback transistor, the pull-up network is of a current mirror structure, the pull-down network is composed of a first pull-down tube and a second pull-down tube, and the feedback transistor is connected with the first pull-down tube and the second pull-down tube. A feedback transistor is added, and when input signal high level conduction succeeds, the current mirror structure is switched off; and the second pull-down tube uses a common-gate transistor, and pulls down the output end of the input shift circuit to a low level by using the sub-threshold conduction principle of the common-gate transistor when the input signal is at a low level. According to the invention, the conversion speed of the falling edge signal in the circuit is effectively improved, the time delay is reduced, the static power consumption is ultralow, the wide voltage conversion range is provided, and meanwhile, the area is very small.

An output driver includes a pull-up transistor having a first current path coupled between a supply voltage and an output node; a pull-down transistor having a second current path coupled between the output node and a reference ground; the gate driving circuit is used for driving the control end of the pull-up transistor according to the first control signal and driving the control end of the pull-down transistor according to the second control signal; the logic control circuit is used for generating a first control signal and a second control signal according to an input signal and an enable control signal; and the current source circuit is used for respectively providing pull-down or pull-up current related to the power supply voltage to the control end of the pull-up transistor or the pull-down transistor when the output signal at the output node is in a rising edge or falling edge process, so as to counteract the influence of the power supply voltage on the transmission time of the output signal. Therefore, stable transmission time can be maintained in a wide power supply voltage range.

In an example, a level shifter includes a low side having first and second inputs. The level shifter also includes a high side, where the high side has a latch having first and second terminals. The high side also includes a current comparator including first and second current mirrors. The high side includes isolation circuitry including first and second transistors, in which the first transistor has a first control terminal, the second transistor has a second control terminal, the first transistor is coupled between the first terminal and the first current mirror, the second transistor is coupled between the second terminal and the second current mirror, the first control terminal is coupled to the second current mirror, and the second control terminal is coupled to the first current mirror.

A charge pump circuit includes first and second capacitors, first, second, third and fourth switches, and a transistor. The first switch is coupled between a top plate of the first capacitor and a first voltage input terminal. The second switch is coupled between a bottom plate of the first capacitor and a reference voltage terminal. The third switch is coupled between the top plate of the first capacitor and a top plate of the second capacitor. The transistor and the fourth switch are coupled in series between the bottom plate of the first capacitor and a second voltage input terminal.

The embodiment of the present application discloses a level shift circuit and a high-voltage half-bridge driver chip. The level shift circuit includes a first and a second high-voltage switch tube, a cross-coupling module and a conversion module; a controlled end of the first high-voltage switch tube; a controlled end of the second high-voltage switch tube; the cross-coupling module includes a first current mirror and a second current mirror; the first and second nodes of the conversion module are respectively connected to the first and second current mirrors through the first and second nodes, to output an output signal.

A structure includes a level shifter, first and second variable voltage generators, and a programmable voltage generator. The level shifter includes low and high supply voltage nodes and two parallel branches, including multiple transistors, connected between the nodes. The programmable voltage generator generates and applies a high supply voltage (VH) to the high supply voltage node. VH is programmable to one of multiple possible VH levels. Based on the voltage level of VH, the first variable voltage generator generates and applies a low supply voltage (VL) to the low supply voltage node and the second variable voltage generator generates and applies a gate bias voltage (VGB) to gates of some transistors. By tracking VH and adjusting VL and VGB based on thereon, the voltage level shifter operates within the SOA at high VHs, remains operable at low VHs, and maintains operating speed at mid-level VHs.

The invention discloses an IO pin multiplexing circuit, a control method, a chip and electronic equipment, and the circuit comprises a gating module which is connected with a chip core and is used for transmitting a first enabling signal and / or a second enabling signal according to an on-chip control signal; the control word coding module is respectively connected with the gating module and the off-chip, and is used for enabling an IO pin to work in a control word coding mode according to the first enable signal; the digital signal input module is respectively connected with the gating module and is used for enabling an IO pin to work in a digital signal input mode according to a second enable signal; and the ESD module is connected with the digital signal input module and the control word coding module and is used for providing electrostatic protection. According to the invention, a pin function multiplexing technology is adopted, a control word writing function can be realized when the chip is just started through an enable signal switching function, a digital signal transmission function can be realized when the chip normally runs, the hardware cost is reduced, and the consumption of pin resources is reduced.

The invention discloses a high-speed level conversion circuit, and belongs to the technical field of integrated circuit design, the circuit mainly comprises an input signal processing module, a voltage boosting module, a differential signal generation module, a signal amplification module and an output module, the input signal processing module converts a low-voltage input signal into a complementary logic signal pair; the voltage boosting module raises the voltage amplitude of the complementary logic signal by using a charge pump principle; the lifted signal drives a thick gate transistor in the differential signal generation module to generate a differential signal; the signal amplification module adopts a cross coupling structure to quickly amplify the differential signal; and finally, the output module outputs a high-voltage domain signal in an inverted manner. By introducing voltage bootstrap before gate driving, the overdrive voltage of a core switch tube is remarkably increased, so that the problem of low conversion speed of a traditional level conversion circuit is effectively solved on the premise of not increasing the device size and static power consumption, and high-speed and high-efficiency level conversion is realized.

A level shifter includes: a low voltage domain configured to output non-overlapping first and second current pulses based on opposite edges of a logic input signal; and a high voltage domain comprising a latch and a current mirror circuit configured to mirror the non-overlapping first and second current pulses such that the latch is set when the first current pulse is active and reset when the second current pulse is active. The current mirror circuit includes a first mirroring path for the first current pulse and a second mirroring path for the second current pulse. The level shifter has a common mode slew current that is added to the non-overlapping first and second current pulses. The first mirroring path and the second mirroring path are cross-coupled such that the common mode slew current is reduced or cancelled before the non-overlapping first and second current pulses are input to the latch.

A disclosed charge pump includes first and second stages and, optionally, additional stage(s). The first stage receives a voltage input (Vin) at a first voltage (V1), CLK1 (GND, V1), and CLK1B (V1, GND), and outputs a first stage voltage output (Vout1) at a second voltage (V2) double V1. A second stage receives Vout1, CLK2 (V1, V2), and CLK2B (V2, V1, and outputs a second stage voltage output (Vout2) at a third voltage (V3) essentially triple V1, and so on. A clock driver supplies CLK1-CLK1B to the first stage and to a clock generator. The clock generator includes: a voltage level shifter, which receives CLK1 and CLK1B and outputs multiple level-shifted voltage output pulses; and a driving circuit, which receives specific ones of the output voltage pulses and outputs CLK2 and CLK2B to the second stage and, if needed, additional voltage level-shifted clock signal-inverted clock signal pairs to any additional stages.

A voltage level shifter is provided. The voltage level shifter includes a main level shifter, a first bias level shifter and a second bias level shifter. The main level shifter includes a first N-type transistor and a second N-type transistor cross-coupled to each other, a third N-type transistor and a fourth N-type transistor controlled by a first bias voltage, a fifth N-type transistor and a sixth N-type transistor respectively controlled by a second bias voltage and a third bias voltage, and a first P-type transistor and a second P-type transistor configured to respectively receive an input signal and an inverted input signal which have opposite voltage values. The first bias level shifter generates the first bias voltage according to an enable signal. The second bias level shifter generates the second bias voltage and the third bias voltage according to the first bias voltage and the input signal.

The invention provides a bidirectional level converter and electronic equipment, and relates to the technical field of analog integrated circuits, the bidirectional level converter comprises a first port, a second port and a conversion circuit arranged between the first port and the second port; the first port comprises a first input / output port and a first reference level port; the second port comprises a second input / output port and a second reference level port; the conversion circuit comprises a first Schmidt comparator, a clamping circuit, a pull-up module, a pull-down module and a second Schmidt compartment.The bidirectional level converter and the electronic equipment have the advantages that under the condition that an input signal is converted from a high signal to a low signal, driving of an input stage does not need extremely high driving capacity, input and output are in an isolated state, and the conversion efficiency is improved; and the load size of the output stage has no influence on the driving capability of the input stage, so that the integrity of signals can be maintained, the system design is more flexible, and meanwhile, the circuit can adapt to more application scenes.

The present disclosure provides a semiconductor device, which includes a process monitor circuit, a controller, and an output buffer. The process monitor circuit is configured to measure process information of the semiconductor device. The controller is electrically connected to the process monitor circuit, and configured to generate a trimming code based on the measured process information. The output buffer is electrically connected to the controller, and configured to adjust a first bias current and a second bias current based on the trimming code.

A reconfigurable driver in an I / O circuit has a first transistor provided in a first pullup structure, a second transistor provided in a second pullup structure, and a control circuit that generates a control signal provided to a gate of the second transistor. A gate of the first transistor receives a data signal. The control signal is an inverted, delayed version of the data signal in a first mode. The control signal turns off the second transistor in a second mode. The control circuit generates the control signal using a version of the data signal when operated in a third mode. The second pullup structure may be used to provide one-shot equalization to an output of the reconfigurable driver when the second pullup structure is operated in the first mode. The second transistor may be a thin-oxide PMOS transistor. The first transistor may be a thin-oxide NMOS transistor.

A semiconductor device (300A) includes a first layer (20) and a second layer (30) over the first layer. The first layer includes a logic circuit portion (23). The second layer includes a level shifter portion (24) and a pixel circuit (51). The logic circuit portion has a function of supplying a first signal for operating the level shifter portion to the level shifter portion. The level shifter portion has a function of supplying a second signal with a larger amplitude than the first signal to the pixel circuit. The logic circuit portion includes a transistor including silicon in a semiconductor layer where a channel is formed. Each of the level shifter portion and the pixel circuit includes a transistor including a metal oxide in a semiconductor layer where a channel is formed.

The invention discloses an automatic direction induction level conversion circuit, which comprises a first voltage domain circuit and a second voltage domain circuit which have the same structure, and can automatically input an input signal A of the first voltage domain circuit to a second level conversion module through a first voltage domain circuit driving input module. A driving signal is output to a second voltage domain circuit to drive an output module to control weak driving and control a monostable circuit to generate corresponding strong driving at the same time, and a second signal B in the same phase is output; or similarly, the input signal B of the second voltage domain circuit is automatically converted into a first signal A with the same phase. According to the level conversion circuit, the transmission direction of the switching signal can be automatically sensed without an additional signal, bidirectional level conversion is realized, and the system structure is simplified; meanwhile, strong driving output is started in a short time through the monostable circuit, the output driving capacity and transmission speed are improved, strong driving output on the other side is closed through a feedback signal, and mistaken starting of the bidirectional level conversion circuit is avoided.

The invention provides an IO port hot plug application circuit and device, and the circuit comprises a pull-down driving module which comprises an MOS tube Mn0, a capacitor C1 and a current source, and the capacitor C1 is connected in parallel between a grid electrode and a source electrode of the MOS tube Mn0; the current source is connected to the grid electrode of the MOS tube Mn0 and provides charging and discharging current for the capacitor C1; the drain electrode of the MOS tube Mn0 is connected with an SCL or SDA signal line, and the source electrode of the MOS tube Mn0 is grounded; the positive input end of the comparator CMP is connected with a reference level, and the negative input end of the comparator CMP is connected with an SDA or SCL signal line; the digital control system comprises a feedback loop of a main switch signal Hjen of a hot plug process and a real-time driving signal Hjctrl of an MOS (Metal Oxide Semiconductor) tube of an analog circuit; the output end of the pull-down driving module is connected with the IO interface, the output end of the comparator CMP is connected to the signal detection end of the digital control system, and the Hjctrl signal end of the digital control system is connected to the control end of the pull-down driving module.

The invention relates to a high-voltage level shift circuit and a layout structure thereof, and the high-voltage level shift circuit comprises a pulse generation module which is used for receiving an input signal and generating a double-path low-voltage domain narrow pulse signal; the level shift module is used for receiving the low-voltage domain narrow pulse signal and converting the low-voltage domain narrow pulse signal into a corresponding double-path high-voltage domain narrow pulse signal; the voltage transient noise detection module is used for detecting voltage transient noise and generating a transient noise intensity signal; the voltage transient noise filtering module is used for filtering voltage transient noise based on the received transient noise intensity signal to generate a double-path high-voltage domain filtering signal; and the RS trigger is used for converting the received high-voltage domain filtering signal into a high-side power device driving signal. The common-mode noise filtering capability and the VS negative bias resisting capability of the voltage transient noise filtering module can be enhanced, the transmission delay of a chip is effectively reduced, and the width of a narrow pulse signal is free of loss in the transmission process, so that the dynamic power consumption is reduced.

A device includes a signal path including a plurality of inverters connected in series, which comprises a first inverter having a first input and a having first output, a second inverter having a second input coupled to the first output of the first inverter and having a second output, and a third inverter having a third input coupled to the second output of the second inverter and having a third output. The device also includes a first feedback path connecting the second output of the second inverter to the first input of the first inverter, the first feedback path including a fourth inverter and a second feedback path connecting the third output of the third inverter to the second input of the second inverter, the second feedback path including a fifth inverter.

The invention relates to a class-C voltage-controlled oscillator with negative-pressure substrate bias and a use method thereof. Aiming at the problem that a traditional C-type voltage-controlled oscillator is difficult to start, the C-type voltage-controlled oscillator provided by the scheme adopts different circuits to simultaneously control the grid voltage and the substrate voltage of the cross-coupled pair transistors, so that the transistors are effectively prevented from entering a linear region, and the C-type voltage-controlled oscillator is quickly started and stably works in a C-type oscillation mode. The circuit structure of the scheme comprises an NMOS (N-channel Metal Oxide Semiconductor) cross coupling circuit, a PMOS (P-channel Metal Oxide Semiconductor) cross coupling circuit, an LC resonant cavity circuit, an amplitude detection circuit, a Schmidt signal processing circuit and a negative voltage charge pump circuit. Wherein the Schmidt signal processing circuit and the negative voltage charge pump circuit rapidly process an initial oscillation signal and provide negative voltage required by the system, and a substrate of the NMOS cross coupling tube is biased. According to the scheme, the design structure is simple, the tuning range is wide, and a new thought is provided for research and design of quick start of the C-type voltage-controlled oscillator.

A circuit includes a power management circuit configured to receive at least a first or a second control signal, and to supply at least a first, second or a third supply voltage. The first control signal has a first voltage swing. The second control signal has a second voltage swing. The power management circuit includes a first level shifter circuit configured to generate a first level shifted signal in response to the first control signal, and a first header circuit coupled to at least the first level shifter circuit, a first voltage supply and a second voltage supply. The first header circuit is configured to supply the first supply voltage of the first voltage supply to the first node in response to the first control signal, and to supply the second supply voltage of the second voltage supply to the second node in response to the first level shifted signal.

The invention discloses a high-speed serial signal linear equalization circuit which comprises an input terminal, a continuous time linear equalizer (CTLE), a super source follower, a variable gain amplifier (VGA) and an adaptive feedback. The input end is connected with a 100-ohm internal resistance differential signal source of the transmitting end through a channel; the equalization circuit CTLE is connected to the output end of the input end connection module, two groups of resistance switches (RsMF and RsHF) of the CTLE module are respectively controlled by 4-bit binary codes to enable source degeneration resistors Rs of two stages of CTLEs to be variable, two groups of capacitance switches (CsMF and CsHF) are respectively controlled by 2-bit binary codes to enable source degeneration capacitors Cs of the two stages of CTLEs to be variable, and the two groups of capacitance switches (CsMF and CsHF) are respectively controlled by 2-bit binary codes to enable source degeneration capacitors Cs of the two stages of CTLEs to be variable. The change of a zero pole of the circuit is realized through the change of the source degeneration resistor Rs and the source degeneration capacitor Cs, and the adjustability of the difference between the high-frequency gain and the low-frequency gain of the circuit is realized, so that the multi-gear adjustability of the equalization capability is realized.

Aspects of gate voltage level shifting circuits are described. An example power amplifier includes a depletion mode power transistor and a level shift circuit. The level shift circuit is configured to generate a level-shifted gate bias control signal for the depletion mode power transistor based on a gate bias control signal. Among other benefits, the level shift circuit facilitates the replacement of the power transistor in a power amplifier system, particularly in cases where the gate bias control levels generated by the amplifier system are insufficient to completely pinch-off the depletion mode power transistor.

The utility model provides a bidirectional anti-backflow circuit, a protection chip and an adapter plate. The bidirectional anti-backflow circuit comprises at least one anti-backflow module, each anti-backflow module comprises two anti-backflow branches with the same circuit structure, and each anti-backflow branch comprises a first control circuit, an isolation circuit, an IO circuit and a second control circuit. Wherein the first end of the first control circuit of one anti-backflow branch is coupled with the first end of the second control circuit of the other anti-backflow branch to form a first IO node, and the first end of the second control circuit of the anti-backflow branch is coupled with the first end of the first control circuit of the other anti-backflow branch to form a second IO node; wherein the control end of the first control circuit and the control end of the second control circuit of one anti-backflow branch are both coupled with a first driving signal, and the control end of the first control circuit and the control end of the second control circuit of the other anti-backflow branch are both coupled with a second driving signal. According to the utility model, bidirectional transmission and isolation protection between chips can be realized with low cost.

A clock distribution network includes an input control circuit and a clock tree. The input control circuit is configured to generate a control input clock signal based on an input clock signal and a low power mode signal. The clock tree is configured to generate an output clock signal by buffering the control input clock signal. When the low power mode signal is enabled, the input control circuit is configured to change a DC level of the control input clock signal.

A dual-rail buffer circuit is utilized to construct a modular global clock distribution network. The dual-rail buffer circuit includes first and second input ports, and first and second output ports coupled via respective first and second channels to the first and second input ports. The dual-rail buffer circuit includes two inverters on the first channel and two inverters on the second channel. The dual-rail buffer circuit also includes two fractional feed-forward equalizers that cross-connect between the two channels. A global clock distribution network includes a plurality of standardized units and T connections configured in a tree structure, where each standardized unit includes the dual-rail buffer circuit coupled to a transmission line. The modular global clock distribution network provides synchronized timing information to a plurality of circuit modules. The length of the standardized units is determined from a pitch length of the circuit modules.