2 results about "High voltage igbt" patented technology

This invention discloses a trench-type radiation-hardened high-voltage IGBT and its fabrication method, relating to the field of power semiconductor device technology. The trench-type radiation-hardened high-voltage IGBT includes a collector, a semiconductor layer disposed on the collector, and a trench embedded in the semiconductor layer. A gate-controlled N-type polysilicon is disposed in the trench. A P-shielding layer and a P+shielding layer are disposed directly below the trench. The P-shielding layer is in contact with the trench, and the P+shielding layer is located below the P-shielding layer. An N+ recombination center region is integrated in the central region of the P-shielding layer and is electrically connected to the emitter. This invention can improve the hole extraction efficiency during radiation transients, thereby improving the radiation resistance of the IGBT device. Furthermore, the IGBT provided by this invention only adds an ion implantation process after trench etching, making it highly compatible with existing IGBT manufacturing processes and requiring no adjustment to the main production line flow.

The invention provides a preparation method of an ultrahigh-voltage IGBT (Insulated Gate Bipolar Translator) chip, which belongs to the technical field of IGBT chip preparation, and comprises the following steps of: growing a drift region epitaxial layer on a silicon substrate, dynamically adjusting the uniformity of a temperature field by adopting a temperature abutting difference matrix, carrying out concentration return deviation vector detection on doping concentration distribution, and growing a gate oxide layer after sacrifice oxidation treatment; performing dual-energy gradient ion implantation on the back surface of the silicon wafer to form an N-type buffer layer, constructing a double-layer game optimization model to solve an optimization parameter combination of deuterium gas annealing temperature and deuterium gas annealing time, performing deuterium gas passivation annealing treatment according to optimization parameters, and performing iterative adjustment until the interface state density meets a threshold value requirement, the technical problem that the reliability of the ultrahigh-voltage IGBT chip is reduced due to the fact that the interface state density of the gate oxide layer is difficult to accurately control is solved.