64 results about "Negative resistance" patented technology

The invention discloses a passive gasket type pressure sensor based on parametric negative resistance self-excitation and a monitoring method, and belongs to the technical field of bolt loosening state monitoring. The sensor is improved based on a standard metal flat washer, a piezoelectric sensing unit, a pilot frequency response passive network and a passive heat-induced drift suppression circuit are embedded, and an embedding area is filled with organic silica gel. The pilot frequency response passive network uses parametric reactance to modulate nuclear strength nonlinearity to generate active negative resistance, weak radio frequency energy self-excitation is achieved, and bolt axial load change is mapped into echo frequency sideband drift; the thermally induced drift suppression circuit eliminates temperature drift. According to monitoring, the environment temperature is determined through temperature echoes, a frequency-load curve is matched, and then the bolt loosening state is determined through bolt loosening state echoes. Passive, wireless, maintenance-free and high-precision monitoring is realized, and the problems of high starting threshold, near communication, poor integration and the like in the prior art are solved.

The invention discloses a voltage-controlled oscillator and a sub-sampling phase-locked loop, and relates to the technical field of phase-locked loops. The voltage-controlled oscillator comprises two negative resistance transistors and a three-layer coil structure; the three layers of coil structures are respectively a drain coil, a grid coil and a source coil from outside to inside; the gate coil and the drain coil are both of an octagonal structure, and the source coil is of a splayed structure; the drain coil, the source coil and the grid coil are all provided with center taps, the center tap of the source coil is connected with a power voltage module, the center tap of the drain coil is grounded, and the connection point of the center tap of the source coil and the power voltage module and the connection point of the center tap of the drain coil and the ground are located on the same side of the drain coil. And the two negative resistance transistors are positioned on the other side of the drain coil. According to the invention, automatic alignment of second harmonics in a wide frequency range is realized. And meanwhile, an extra chip area is not increased.

A frequency multiplier includes an oscillator and a harmonic generator. The oscillator has a resonant cavity and a negative resistance unit. The negative resistance unit includes a feedback capacitor and a parasitic capacitor. The feedback capacitor and the parasitic capacitor collectively provide negative resistance for the resonant cavity. The harmonic generator is configured to generate a harmonic signal based on a fundamental frequency signal taken as input. The oscillator is electrically connected to the harmonic generator, and is configured to receive the harmonic signal, and to output an intrinsic signal with the resonant cavity. A frequency of the intrinsic signal is a multiple of a frequency of the fundamental frequency signal.

The embodiment of the application provides a voltage-controlled oscillator, an oscillator circuit, a chip and an electronic device, relates to the technical field of communication or radar detection, and can improve the linearity of the voltage-controlled oscillator. The voltage-controlled oscillator comprises a voltage-controlled oscillator resonant cavity, an even harmonic generator circuit and a self-mixing tripler circuit. The voltage-controlled oscillator resonant cavity comprises a voltage change diode array and a first mode switching capacitor. The even harmonic generator circuit comprises a group of cross-coupled tubes, one end of the group of cross-coupled tubes is electrically connected to differential two ends of the voltage-controlled oscillator, and the group of cross-coupled tubes simultaneously serves as an even harmonic generator and is electrically connected to the self-mixing tripler circuit. The self-mixing tripler circuit comprises a differential unit and a resonant cavity, and one end of the self-mixing tripler circuit is electrically connected to the even harmonic generator circuit. The low-frequency voltage-controlled oscillator and the self-mixing tripler circuit realize current multiplexing, the even harmonic generator circuit serves as an even harmonic generator of the self-mixing tripler in addition to serving as negative resistance of the oscillator, and the linearity of the millimeter wave frequency source is improved.

The invention relates to the field of integrated circuits, in particular to a K-band voltage-controlled oscillator based on a noise circulation structure, a phase-locked loop and a chip. The voltage-controlled oscillator comprises an oscillation circuit and a tuning circuit. The oscillating circuit comprises an upper resonant cavity formed by a basic oscillating circuit adopting a noise circulation structure and a lower resonant cavity formed by a noise suppression circuit adopting a Colpitts structure. The oscillating circuit adopts two groups of cross-coupled negative resistors, namely NMOS and PMOS, the cross-coupled negative resistors adopt a capacitance-coupled noise circulation structure, the PMOS adopts a Colpitts structure, and the cross-coupled negative resistors are connected through a tail inductor so as to improve phase noise and power consumption of the circuit. The tuning circuit adopts a variable capacitor which is connected to the oscillation circuit and is composed of a numerical control capacitor array and / or a self-adjusting capacitor circuit; and the capacitance value of the variable capacitor is adjusted to realize fine adjustment of the oscillation frequency. According to the invention, the problem that a traditional oscillator with a noise circulation structure is difficult to realize comprehensive optimization of phase noise and power consumption can be solved.

This invention discloses a load current source module, readout system, and imaging device for image sensor readout, relating to the field of image sensor technology. It includes: a current mirror circuit; a negative impedance transformation circuit, which generates negative resistance or capacitance to cancel out the parasitic resistance or capacitance of the VSL itself; and a charge / discharge acceleration circuit. This invention allows the load current source module to internally incorporate a negative impedance transformation circuit and a charge / discharge acceleration circuit. On one hand, the negative impedance transformation circuit generates negative impedance to cancel out the parasitic capacitance and resistance present in the VSL signal establishment, thereby accelerating the small signal establishment speed. On the other hand, the charge / discharge acceleration circuit provides a larger transient current to accelerate the large signal establishment speed. In other words, the load current source module in this application does not change the operating point design of the main current mirror circuit, effectively accelerating the VSL establishment time.

The application discloses a low-power-consumption common-gain adjustable metasurface based on nonlinear negative resistance, which comprises a low-power-consumption metasurface unit and a backscattering amplifier connected in series with the low-power-consumption metasurface unit; the low-power-consumption metasurface unit comprises, from top to bottom, an upper copper sheet, an upper dielectric, a metal ground, a lower dielectric and a bottom RLC switching circuit layer; wherein the upper copper sheet is connected with the bottom RLC switching circuit through a through hole; the bottom RLC switching circuit layer comprises a plurality of radio frequency switches and LC circuits or resistors embedded between the radio frequency switches; the backscattering amplifier comprises a matching circuit, the matching circuit is connected with an amplifying circuit through a direct-current isolation part, and the amplifying circuit is connected with a bias circuit through a cross isolation part. After an electromagnetic signal is input into the amplifying circuit through the bottom RLC switching circuit, the LC circuit or the resistor is selected through the radio frequency switch, the electromagnetic signal is amplified, and then the electromagnetic signal is reflected, the LC circuit or the resistor is selected through the radio frequency switch, the electromagnetic signal is transmitted to the upper copper sheet, and then the electromagnetic signal is radiated to the free space.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

The application discloses a phase sensor system based on a nonlinear PT symmetry principle and a detection method thereof. The sensor system comprises: a gain end resonance circuit composed of a first inductor, a first capacitor and a nonlinear negative resistance in series; a loss end resonance circuit composed of a second inductor, a second capacitor and a positive resistance in series; and a coupling capacitor connected between the gain end resonance circuit and the loss end resonance circuit and achieving energy transmission between the two circuits. The current flowing through the gain end resonance circuit is a gain side current, and the current flowing through the loss end resonance circuit is a loss side current. High-sensitivity detection of external disturbance is realized by monitoring the phase difference between the gain side current and the loss side current. The application can realize high-sensitivity detection of a to-be-detected parameter in a wide dynamic sensitive range, and simultaneously has the characteristics of rapid response and noise suppression, thereby solving the technical problem that the existing PT symmetry sensing system is difficult to simultaneously consider a large dynamic range and high sensitivity.

The invention discloses an orthogonal enhanced ring oscillator based on in-phase injection coupling, which belongs to the technical field of radio frequency integrated circuits and comprises a ring oscillator circuit and an orthogonal coupler circuit. The ring oscillator circuit is used for generating oscillation signals and comprises two cascaded differential ring oscillator basic units, and each stage of differential ring oscillator basic unit comprises an input pair transistor and a negative resistance pair transistor; the quadrature coupler circuit comprises a coupling transistor and four differential output nodes which are respectively connected with the first-stage differential ring oscillator basic unit and the second-stage differential ring oscillator basic unit to form an in-phase injection coupling structure. By introducing an in-phase injection coupling structure into the orthogonal enhanced ring oscillator, collaborative optimization of high-precision phase locking and low phase noise is realized, and the phase difference of multi-phase output signals is stably locked through pure switching operation on the premise of not consuming static power consumption.

The application relates to the field of integrated circuits, in particular to a K-band voltage-controlled oscillator based on a noise circulation structure, a phase-locked loop and a chip. The voltage-controlled oscillator comprises an oscillation circuit and a tuning circuit. The oscillation circuit comprises an upper resonant cavity composed of a basic oscillation circuit adopting a noise circulation structure and a lower resonant cavity composed of a noise suppression circuit adopting a Colpitts structure. The oscillation circuit adopts two groups of cross-coupled negative resistances of NMOS and PMOS, the former adopts a noise circulation structure of capacitive coupling, the latter adopts a Colpitts structure, and the two are connected through a tail inductor to improve the phase noise and power consumption of the circuit. The tuning circuit adopts a variable capacitor connected to the oscillation circuit and composed of a digital-controlled capacitor array and / or a self-tuning capacitor circuit; the capacitance value of the variable capacitor is adjusted to finely adjust the oscillation frequency. The application can solve the problem that the traditional noise circulation structure oscillator is difficult to comprehensively optimize the phase noise and power consumption.

This invention provides a negative resistance oscillator and inductor sensor system with multi-parameter programmable characteristics, relating to the field of electronics and electrical engineering. It includes an amplification unit, a resonant circuit, and a feedback network. The resonant circuit is connected between the non-inverting input terminal and a reference potential. The feedback network consists of first, second, and positive feedback units connected between the inverting input terminal, the output terminal, and the non-inverting input terminal. The equivalent parameter values ​​of the feedback units are configured through programming to collaboratively determine the equivalent negative resistance, matching it with the equivalent loss of the resonant circuit. The beneficial effects are that programmable parameter configuration achieves precise matching of the equivalent negative resistance with resonant circuits of different specifications, solving the problems of poor adaptability and rigid settings in traditional oscillators. Furthermore, active compensation for temperature characteristics is achieved through multi-parameter collaborative adjustment, significantly improving the system's versatility, flexibility, and stability under different hardware environments and temperature scenarios.

Embodiments of methods and semiconductor devices are described that are configured to determine a negative resistance margin (NRM) of an oscillator circuit. The semiconductor device may include an integrated circuit including an amplifier circuit coupled between a first node and a second node and NRM test circuitry including a resistor circuit selectively coupled between a first contact pad and the first node. The integrated circuit may receive an oscillating signal from an oscillator circuit coupled to the first contact pad and a second contact pad of the integrated circuit. In an NRM test mode, a resistance of the resistor circuit is selectively varied from an initial resistance value to one or more second resistance values and the oscillating signal is monitored at the second node to determine the NRM based on the one or more second resistance values when an amplitude of the oscillating signal falls below a threshold amplitude.

The utility model discloses a current compensation circuit and a chip, which are used for compensating the output current of a current type digital-to-analog converter, the current compensation circuit comprises a negative resistance unit connected with the output end of the current type digital-to-analog converter, and the negative resistance unit comprises a detection unit and a compensation unit, the detection unit generates a detection current based on an output voltage of the current-mode digital-to-analog converter. The compensation unit generates, based on the detection current, a compensation current opposite to the detection current in flow direction and for the injection node. According to the current compensation circuit and the chip, the detection unit shunts the output current of the current type digital-to-analog converter, the compensation unit generates the compensation current based on the detection current generated by shunting, the magnitude of the compensation current is adjustable, and the direction of the compensation current is opposite to that of the detection current. The output current of the current type digital-to-analog converter is compensated through the compensation current, so that the precision of the output current of the current type digital-to-analog converter under different loading conditions is improved.

The application relates to the field of integrated circuit technology and discloses an injection-locked frequency multiplier circuit with an oscillator, which comprises the following: a differential mode resonant cavity for generating a fundamental wave signal and a third harmonic signal; a first oscillator unit connected with the differential mode resonant cavity and used for providing negative resistance; an injection unit connected with the differential mode resonant cavity, the injection unit being used for converting the fundamental wave signal and the third harmonic signal into a third harmonic component; a second oscillator unit used for providing negative resistance; and a fourth-order resonant cavity connected with the second oscillator unit and the injection unit and used for coupling the third harmonic component to be output. According to the application, the fundamental wave signal generated by the differential mode resonant cavity is converted into a triple-frequency output through the injection unit, the third harmonic signal is directly enhanced to be output, the third harmonic component output by the injection unit is coupled to be output through the fourth-order resonant cavity, the phase noise of the frequency multiplier is reduced, the energy efficiency is improved, and thus the demand of the local oscillator performance for millimeter wave high-speed wireless communication can be met.

The application discloses a quality factor enhanced active filter and electronic equipment, and relates to the technical field of integrated circuit band pass filters. The quality factor enhanced active filter comprises a subtraction circuit, a first second-order quality factor enhanced active filter circuit and a second second-order quality factor enhanced active filter circuit which are electrically connected with the subtraction circuit. The first second-order quality factor enhanced active filter circuit and the second second-order quality factor enhanced active filter circuit each comprise variable gain sub-circuits, inductance-capacitance parallel resonance sub-circuits and negative resistance feedback sub-circuits which are electrically connected with each other. The subtraction circuit is connected with the variable gain sub-circuit. The application has the technical effects of a large gain adjustment range, unchanged center frequency points during gain and Q value adjustment, tunable center frequency, good rectangular coefficient and high linearity, and can be integrated and used in radio frequency front-end equipment.

The application discloses a multi-dimensional reconfigurable band-pass filter chip, comprising a voltage driving unit, a current driving unit, an LC resonance network and an adjustable negative resistance network; the chip is based on the impedance-adjustable LC resonance network, constructs a novel band-pass filter architecture driven by voltage and current, realizes multi-dimensional adjustment of the center frequency, bandwidth and gain of the band-pass filter and improvement of out-of-band roll-off through voltage-controlled adjustment of the varactor, LC cascade resistance, LC parallel negative resistance and source degeneration resistance, independently feeds the improved negative resistance network, realizes signal coupling as AC coupling, realizes power consumption configuration of the filter for signal amplitude, and meets the efficient filtering requirements of the receiver in various scenes.

The application relates to a CMOS voltage-controlled oscillator applied to an anti-interference unmanned aerial vehicle millimeter wave radar and belonging to the millimeter wave radar design field, which comprises a resonance circuit, a negative resistance active circuit and two switch circuits with the same structure. The resonance circuit comprises a switch capacitor, a direct-current isolation capacitor, a resonance capacitor, a grounding resistor, a tuning resistor and a resonance inductor; the negative resistance active circuit comprises a cross-coupled MOS pair and a current source; and the switch circuits each comprise a switch MOS, a grounding resistor and a switch-coupled inductor. The application utilizes a dual-phase transformer structure to make the resonance inductor and the switch-coupled inductor mutually inductive, thereby changing the inductance value of the resonance inductor and realizing frequency band switching; the combination of switch capacitor conduction and shutdown and switch-coupled inductor conduction and shutdown is used to realize VCO bandwidth tuning; the CMOS process is adopted for design, and the VCO is miniaturized and integrated. While the performance of the voltage-controlled oscillator and the layout area are ensured, a full-frequency-band wide-band tuning range is realized, thereby improving the detection capability and resolution of the millimeter wave radar, realizing frequency hopping communication and spread spectrum communication of the unmanned aerial vehicle, and effectively improving the anti-interference capability and safety of the unmanned aerial vehicle.

The application discloses a kind of based on in-phase injection coupling quadrature enhanced ring oscillator, belong to radio frequency integrated circuit technical field, comprising: ring oscillator circuit and quadrature coupler circuit;Ring oscillator circuit is used to generate oscillation signal, including cascaded two differential ring oscillator basic units, and each stage differential ring oscillator basic unit includes input pair transistor and negative resistance pair transistor;Quadrature coupler circuit includes coupling transistor: Q1, Q2 and Q3, four differential output nodes of first stage differential ring oscillator basic unit and second stage differential ring oscillator basic unit are connected respectively, and in-phase injection coupling structure is formed.Through introducing in-phase injection coupling structure in quadrature enhanced ring oscillator, high-precision phase locking and low phase noise are realized Collaborative optimization, on the premise of not consuming static power consumption, the phase difference of multiple-phase output signal is stably locked in by pure switch operation.

The invention relates to a C-type differential series voltage-controlled oscillator, and belongs to the technical field of radio frequency integrated circuits. The voltage-controlled oscillator comprises a differential structure, a resonant network and a frequency tuning unit. According to the invention, low equivalent impedance and large oscillation current are formed at the resonant frequency by using the series resonance path under the driving of the differential active negative resistance, so that stable oscillation is realized. The series resonance structure has lower equivalent impedance at a resonance point, so that disturbance of thermal noise and noise of an active device to an oscillation phase is remarkably reduced. The multi-position switched capacitor array is realized at the same time, the switched capacitor array and the variable capacitor are adopted for frequency tuning, the effect of improving the precision of the oscillator is achieved while the wide tuning range is realized, the phenomena of multi-mode oscillation and mode competition possibly occurring in a composite resonant structure are avoided, and the oscillation mode has good uniqueness and predictability.

The application relates to an RC-LIGBT device with independently designed FWD, and belongs to the technical field of power semiconductors. The RC-LIGBT device comprises an LIGBT region and a reverse freewheeling region, the reverse freewheeling region comprises a reverse freewheeling part which can be independently installed in the region, and the reverse freewheeling part is configured as a pin diode freewheeling part, an MPS freewheeling part or a MOS Channel Diode freewheeling part. The LIGBT device of the application fundamentally suppresses the generation of negative resistance effect when the LIGBT device is forwardly turned on without the collector region N+ part of the traditional RC-LIGBT, and has no latch-up effect; and when the LIGBT device is reversely turned on, the independently designed freewheeling diode part is turned on when VEC>Vth, thereby providing reverse current during the period; and the reverse conduction part of the IGBT can be independently designed to obtain different reverse performances and characteristics without affecting the forward performance of the device.

The invention discloses a dual-core quadrature LC oscillator circuit and module, and relates to the technical field of quadrature LC oscillators. According to the invention, a master-slave dual-core design is adopted, the output of the quadrature phase is realized through a mutual injection locking mode, the number and power consumption of oscillators are effectively reduced, and the layout area of the circuit is reduced. According to the invention, on one hand, the negative resistance unit of the noise circulation structure is connected with the resonant cavity, so that a part of thermal noise generated by the transistor can circulate in the negative resistance unit under the condition that the negative resistance is not changed to reduce the amount of noise entering the resonant cavity, and on the other hand, phase shift is carried out on an injected signal by adopting a passive phase shift network technology; noise influence generated by an active device is directly avoided physically, so that the total noise amount injected into the resonant cavity is reduced, and the phase noise of the oscillator is effectively optimized.

The invention discloses a rotating equipment PT symmetrical wireless power transmission system and a constant power transmission method thereof, the system comprises a power source, an inversion module, a transmission coil module, a rectification module and a load, the power source and the inversion module are equivalent to a negative resistor externally, and the rectification module and the load are equivalent to an output resistor externally. The transmission coil module is composed of a transmitting coil and a receiving coil, and the system meets the PT symmetry condition. According to the deduced analytical expression of the output current, the fluctuation factor causing the fluctuation of the output power of the rotating equipment PT symmetric wireless power transmission system is analyzed, and the mutual inductance between the transmitting coil and the receiving coil is designed by taking elimination of the fluctuation factor as a target. By regulating and controlling the mutual inductance between the transmitting coil and the receiving coil, the amplitude of the output current can be kept constant, and then the constant power output characteristic of the system can be achieved.

The application discloses a voltage source type energy storage wide frequency band negative resistance characteristic analysis method based on impedance splitting. The method is simplified based on a voltage source type energy storage impedance model, impedance characteristics of a simplified model in a wide frequency band range are analyzed, impedance frequency bands are divided according to characteristics of a voltage source type energy storage controller and the wide frequency band impedance characteristics, a medium frequency band negative resistance source is analyzed by using the impedance splitting method, and the voltage source type energy storage instability risk positioning method is improved, thereby providing a reference for improving small signal stability of the voltage source type energy storage.

The application discloses a high-voltage direct-current power supply for an axial fast-flow CO2 laser, and relates to the technical field of high-voltage direct-current power supplies, comprising a three-phase rectification module, a soft-start filtering module, a phase-shift full-bridge inversion module, a high-frequency voltage-boosting module, a high-voltage rectification output module, a setting signal input module, a laser energy feedback module, a phase shift control module, a primary-side current detection module and a protection module; three-phase alternating current is rectified, filtered, phase-shift inverter, isolated boosted and high-voltage rectified to form a high-voltage direct-current output; the phase shift control module adjusts a phase shift angle according to the deviation of a power setting signal and a laser energy feedback signal; and the primary-side current detection module triggers the protection module to shut off a driving output when the current reaches a preset condition. Through laser energy closed-loop regulation, primary-side current rapid protection, high-frequency voltage-boosting and water-cooling heat dissipation, the output stability and response capability are improved, negative resistance discharge overshoot is inhibited, abnormal discharge risk is reduced, and the power supply efficiency, power density and reliability are improved.

The application discloses a frequency and damping independently adjustable dynamic vibration absorber and a design method thereof, and relates to the technical field of semi-active control of structural vibration. The structure is composed of an inertial actuator and a shunt circuit. The shunt circuit comprises a negative inductance and negative resistance compensation circuit and an inductance-resistance-capacitance parallel circuit. Two wiring ends of a voice coil of the inertial actuator are connected with the shunt circuit to form a complete loop. The independent adjustment of the inherent frequency and the damping of the inertial actuator can be realized by adjusting the parameters of the shunt circuit. Therefore, the dynamic vibration absorber has the characteristics of controlling vibration of any disturbance frequency. The application does not need any mechanical driving device, and the inherent frequency and the damping adjustment of the dynamic vibration absorber are independent of each other.

The present application provides a kind of transverse RC-IGBT device structure of eliminating negative resistance effect.The transverse RC-IGBT device compared with in traditional transverse IGBT device, there is oxide isolation region at the center of the drift region of device, and there is a low-doped silicon region inside the oxide isolation region.Due to the isolation effect of the above oxide, the traditional IGBT region is below the oxide, so the bipolar current of forward conduction mode can be normally turned on, and there is no negative resistance effect.The freewheeling diode region is above the oxide, so the bipolar current of reverse conduction mode can be normally turned on.By adjusting the proportion of the area above and below the oxide, the performance distribution of IGBT and freewheeling diode can be adjusted.

This invention discloses a high-frequency oscillation suppression method in flexible DC transmission systems, solving the mid-to-high frequency oscillation instability problem caused by time delay in existing converter stations. To achieve negative resistance suppression in the mid-to-high frequency range of modular multilevel converters, an impedance matrix of the converter is obtained based on a multi-harmonic linearization impedance modeling method. A simplified impedance method for the mid-to-high frequency range is proposed based on the control loop characteristics, separating the high-frequency delay-added impedance and the mid-frequency current loop-added impedance. Appropriate filters are added to the voltage feedforward branch and the feedback branch of the current loop, and reasonable parameters are designed to improve the negative resistance phenomenon in the mid-to-high frequency range, achieving mid-to-high frequency impedance reshaping of the modular multilevel converter. This provides a foundation for stability analysis of flexible DC transmission systems and control optimization design of converter stations, and is of great significance for the safe and stable operation of wind farm-converter station systems. It has significant engineering application value and is suitable for widespread promotion and use.

The application discloses a control method, a control system and a driving system of a motor driving system, wherein the control method comprises the following steps: S1, after an inverter of the motor driving system receives a torque instruction, generating an inverter reference current given value; S2, obtaining a current change value caused by a DC side capacitor voltage change of each motor controller in the motor driving system, comparing the current change value with the reference current given value to obtain a comparison result; and S3, controlling the motor according to the comparison result. According to the application, the current change value caused by the DC side capacitor voltage change of each motor controller is fed forward to a current reference value link of the motor controller, the negative impedance of the motor controller load is changed into positive impedance through the feedforward control, and thus the problem of the negative impedance of the constant power characteristic of the motor controller load is solved; and the voltage equalization control link is used to solve the voltage equalization problem of the DC side of the series connection of each motor controller.

The invention discloses a negative resistor based on resistor-capacitor alternating current coupling bias, the negative resistor is formed by cross coupling connection of MOS tubes, the bias voltage is isolated from the actual input voltage by using a resistor-capacitor alternating current coupling bias mode, the bias precision and stability are significantly improved, the overall performance of the negative resistor is further enhanced, and the mismatch effect is inhibited. In addition, negative resistor work is directly carried out without source electrode degeneration, so that the power consumption of the negative resistor is greatly improved, high energy efficiency is realized, and the structure is obviously superior to that of a traditional structure.