115 results about "Negative resistance" patented technology

The invention discloses an impedance characteristic remodeling method, device and equipment and a medium, and is applied to the field of wind turbine generators. Wherein the corresponding rotor reference current is determined according to the electromagnetic reactive power, the active power and the corresponding power reference value; correcting the rotor current according to the rotor reference current by adopting a virtual admittance control mode, and generating a corresponding rotor voltage given value; sequentially performing differentiation, filtering and signal extraction processing on the rotor reference current and the rotor current to obtain an impedance remodeling signal; and correcting the rotor voltage given value based on the impedance remodeling signal so as to enable the corrected rotor voltage given value to serve as the control voltage of a rotor side converter in the medium-voltage doubly-fed wind turbine generator after impedance characteristic remodeling. The virtual admittance control mode and the impedance remolding signal mode are adopted to suppress the negative resistance effect of the rotor side converter in the medium-voltage doubly-fed wind turbine generator under voltage disturbance, and therefore the damping effect on external excitation in the sub-super-synchronous frequency band and the high frequency band is higher.

The invention provides a damping boosting method for a high-inertia energy storage type synchronous phase modifier based on stator voltage feed-forward compensation, which is used for respectively calculating d-axis compensation modulation voltage and q-axis compensation modulation voltage of a grid-side converter and a rotor-side converter, and is used for enhancing small-disturbance stability in an HIESSC wide-slip operation range. Under a weak power grid connection condition, the method feeds HIESSC stator voltage disturbance forward to a rotor side converter and a grid side converter controller output voltage through a transfer function, so that reduction of a negative resistance region of HIESSC impedance characteristics can be realized, and adverse effects of grid-connected point voltage disturbance are inhibited, thereby improving the HIESSC impedance characteristics and enhancing small disturbance stability of an HIESSC grid-connected system.

The embodiment of the invention provides a voltage-controlled oscillator, an oscillator circuit, a chip and electronic equipment, relates to the technical field of communication or radar detection, and can improve the linearity of the voltage-controlled oscillator. The voltage-controlled oscillator comprises a voltage-controlled oscillator resonant cavity, an even harmonic generator circuit and a self-mixing frequency tripler circuit. The voltage-controlled oscillator resonant cavity comprises a voltage transformation diode array and a first-stage mode switching capacitor. The even harmonic generator circuit comprises a group of cross coupling tubes, one end of each cross coupling tube is electrically connected to the two differential ends of the voltage-controlled oscillator, and the even harmonic generator circuit serves as an even harmonic generator and is electrically connected to the self-mixing frequency tripler circuit. The self-mixing frequency tripler circuit comprises a differential unit and a resonant cavity, and one end of the self-mixing frequency tripler circuit is electrically connected to the even harmonic generator circuit. The low-frequency voltage-controlled oscillator and the self-mixing frequency tripler circuit achieve current multiplexing, the even harmonic generator circuit serves as a negative resistor of the oscillator and also serves as an even harmonic generator of the self-mixing frequency tripler, and the linearity of the millimeter wave frequency source is improved.

The invention discloses a low-power-consumption voltage-controlled oscillator based on an SOI (Silicon On Insulator) process, relates to the technical field of integrated circuit design, and is used for solving the technical problem that an existing Colpitts oscillator is too high in power consumption and cannot be applied to a low-power-consumption integrated circuit. The invention discloses a low-power-consumption voltage-controlled oscillator based on an SOI (Silicon On Insulator) process. The low-power-consumption voltage-controlled oscillator comprises a Colpitts resonance circuit, a negative resistance unit and an LC filter network, the negative resistance unit is at least provided with a pair of RC network bias NMOS transistors and a pair of cross-coupled NMOS transistors, and the drain electrodes of the RC network bias NMOS transistors are connected with the Colpitts resonance circuit; the input end of the LC filter network is connected with the source electrodes of the cross-coupled NMOS transistors; the negative resistance unit biases the NMOS transistor through the RC network to introduce a feedback path to form a C-class oscillator structure, the Colpitts resonance circuit generates a first signal, and the first signal passes through the negative resistance unit and is output after common-mode noise is filtered by the LC filter network.

The invention discloses a voltage-controlled oscillator with small-area and wide-band modulation capability, and particularly relates to the technical field of radio frequency integrated circuits. The voltage-controlled oscillator comprises two symmetrical voltage-controlled oscillation units; wherein each voltage-controlled oscillation unit comprises a resonance circuit; the resonance circuit comprises an LC resonance circuit and a negative resistance active circuit; the LC resonant circuit comprises a switched capacitor array; two ports of the LC resonance circuit are respectively connected to the output ends of the cross coupling MOS pair; the switched capacitor array is used for providing at least two gears of variable capacitance; the negative resistance active circuit comprises a cross coupling pair transistor and a bias current source; the mode change-over switch circuit comprises two groups of symmetrical switch MOS (Metal Oxide Semiconductor) tubes and mutual inductance transformer taps; and in each voltage-controlled oscillation unit, a tap of the resonant inductor is connected with a corresponding port of the mode switching switch MOS tube. According to the scheme, the mismatch effect caused by a small process and the stray capacitance caused by layout and wiring can be reduced as much as possible, and the chip area can be reduced while the performance is ensured, so that the tape-out cost is reduced.

The invention discloses a passive gasket type pressure sensor based on parametric negative resistance self-excitation and a monitoring method, and belongs to the technical field of bolt loosening state monitoring. The sensor is improved based on a standard metal flat washer, a piezoelectric sensing unit, a pilot frequency response passive network and a passive heat-induced drift suppression circuit are embedded, and an embedding area is filled with organic silica gel. The pilot frequency response passive network uses parametric reactance to modulate nuclear strength nonlinearity to generate active negative resistance, weak radio frequency energy self-excitation is achieved, and bolt axial load change is mapped into echo frequency sideband drift; the thermally induced drift suppression circuit eliminates temperature drift. According to monitoring, the environment temperature is determined through temperature echoes, a frequency-load curve is matched, and then the bolt loosening state is determined through bolt loosening state echoes. Passive, wireless, maintenance-free and high-precision monitoring is realized, and the problems of high starting threshold, near communication, poor integration and the like in the prior art are solved.

The invention discloses a four-core F23 type millimeter wave voltage-controlled oscillator based on an intra-core common mode technology. The voltage-controlled oscillator comprises a three-coil coupling four-core class-F inductor and four voltage-controlled oscillator cores. The three-coil coupling quad-core class-F inductor comprises eight differential ports, four ports are connected with a grid electrode of a core negative resistance tube of the voltage-controlled oscillator, and the other four ports are connected with a drain electrode of the core negative resistance tube of the voltage-controlled oscillator. The negative resistance tubes of the four voltage-controlled oscillator cores are formed by NMOS tubes and PMOS tubes in an alternating mode. The voltage-controlled oscillator is in an F-type working state for differential mode current so as to improve phase noise; noise filtering is performed on the common-mode current through an intra-core natural common-mode path. According to the invention, millimeter wave frequency output with low phase noise can be realized in a compact layout.

The invention discloses an on-chip active reconfigurable filter passband flatness optimization method and circuit, and belongs to the field of integrated circuits and wireless communication. The filter comprises a coupling element, negative resistance compensation units are connected to the two ends of the coupling element and connected with the coupling element in parallel, and the coupling element comprises a coupling inductor or a coupling capacitor. The invention provides a passband flatness method based on active coupling compensation by deeply analyzing the passband flatness distortion reason of the on-chip coupling filter, and designs a detailed controllable negative resistance unit to compensate the coupling (inductive coupling) loss of the base transformer, thereby greatly reducing the in-band insertion loss variation of the filter, and improving the filter performance. And the amplitude consistency of the signal after passing through the filter is improved.

The invention discloses a voltage-controlled oscillator and a sub-sampling phase-locked loop, and relates to the technical field of phase-locked loops. The voltage-controlled oscillator comprises two negative resistance transistors and a three-layer coil structure; the three layers of coil structures are respectively a drain coil, a grid coil and a source coil from outside to inside; the gate coil and the drain coil are both of an octagonal structure, and the source coil is of a splayed structure; the drain coil, the source coil and the grid coil are all provided with center taps, the center tap of the source coil is connected with a power voltage module, the center tap of the drain coil is grounded, and the connection point of the center tap of the source coil and the power voltage module and the connection point of the center tap of the drain coil and the ground are located on the same side of the drain coil. And the two negative resistance transistors are positioned on the other side of the drain coil. According to the invention, automatic alignment of second harmonics in a wide frequency range is realized. And meanwhile, an extra chip area is not increased.

A frequency multiplier includes an oscillator and a harmonic generator. The oscillator has a resonant cavity and a negative resistance unit. The negative resistance unit includes a feedback capacitor and a parasitic capacitor. The feedback capacitor and the parasitic capacitor collectively provide negative resistance for the resonant cavity. The harmonic generator is configured to generate a harmonic signal based on a fundamental frequency signal taken as input. The oscillator is electrically connected to the harmonic generator, and is configured to receive the harmonic signal, and to output an intrinsic signal with the resonant cavity. A frequency of the intrinsic signal is a multiple of a frequency of the fundamental frequency signal.

The invention discloses an anti-radiation low-phase noise voltage-controlled oscillator based on an SOI (Silicon On Insulator) process, relates to the technical field of oscillators, and is used for solving the technical problem that the existing voltage-controlled oscillator based on the SOI process cannot realize low phase noise and high anti-radiation capability at the same time. The anti-radiation low-phase noise voltage-controlled oscillator based on the SOI technology comprises an energy storage unit and a negative transconductance unit. The energy storage unit forms a resonant cavity through an inductor and a capacitor; the negative transconductance unit is connected with the energy storage unit; the negative transconductance unit at least comprises a first cross-coupled pair and a second cross-coupled pair which are formed by a plurality of transistors; the first cross coupling pair is used for generating negative resistance to compensate the loss of the energy storage unit, and the second cross coupling pair serves as a current switching network; the first cross coupling pair and the second cross coupling pair form a negative resistance characteristic, direct-current energy is converted into alternating-current oscillation energy, loss of the resonant cavity is compensated, and a generated oscillation signal is output from the output node.

The embodiment of the application provides a voltage-controlled oscillator, an oscillator circuit, a chip and an electronic device, relates to the technical field of communication or radar detection, and can improve the linearity of the voltage-controlled oscillator. The voltage-controlled oscillator comprises a voltage-controlled oscillator resonant cavity, an even harmonic generator circuit and a self-mixing tripler circuit. The voltage-controlled oscillator resonant cavity comprises a voltage change diode array and a first mode switching capacitor. The even harmonic generator circuit comprises a group of cross-coupled tubes, one end of the group of cross-coupled tubes is electrically connected to differential two ends of the voltage-controlled oscillator, and the group of cross-coupled tubes simultaneously serves as an even harmonic generator and is electrically connected to the self-mixing tripler circuit. The self-mixing tripler circuit comprises a differential unit and a resonant cavity, and one end of the self-mixing tripler circuit is electrically connected to the even harmonic generator circuit. The low-frequency voltage-controlled oscillator and the self-mixing tripler circuit realize current multiplexing, the even harmonic generator circuit serves as an even harmonic generator of the self-mixing tripler in addition to serving as negative resistance of the oscillator, and the linearity of the millimeter wave frequency source is improved.

Embodiments of methods and semiconductor devices are described that are configured to determine a negative resistance margin (NRM) of an oscillator circuit. The semiconductor device may include an integrated circuit including an amplifier circuit coupled between a first node and a second node and NRM test circuitry including a resistor circuit selectively coupled between a first contact pad and the first node. The integrated circuit may receive an oscillating signal from an oscillator circuit coupled to the first contact pad and a second contact pad of the integrated circuit. In an NRM test mode, a resistance of the resistor circuit is selectively varied from an initial resistance value to one or more second resistance values and the oscillating signal is monitored at the second node to determine the NRM based on the one or more second resistance values when an amplitude of the oscillating signal falls below a threshold amplitude.

The invention relates to the field of integrated circuits, in particular to a K-band voltage-controlled oscillator based on a noise circulation structure, a phase-locked loop and a chip. The voltage-controlled oscillator comprises an oscillation circuit and a tuning circuit. The oscillating circuit comprises an upper resonant cavity formed by a basic oscillating circuit adopting a noise circulation structure and a lower resonant cavity formed by a noise suppression circuit adopting a Colpitts structure. The oscillating circuit adopts two groups of cross-coupled negative resistors, namely NMOS and PMOS, the cross-coupled negative resistors adopt a capacitance-coupled noise circulation structure, the PMOS adopts a Colpitts structure, and the cross-coupled negative resistors are connected through a tail inductor so as to improve phase noise and power consumption of the circuit. The tuning circuit adopts a variable capacitor which is connected to the oscillation circuit and is composed of a numerical control capacitor array and / or a self-adjusting capacitor circuit; and the capacitance value of the variable capacitor is adjusted to realize fine adjustment of the oscillation frequency. According to the invention, the problem that a traditional oscillator with a noise circulation structure is difficult to realize comprehensive optimization of phase noise and power consumption can be solved.

This invention discloses a load current source module, readout system, and imaging device for image sensor readout, relating to the field of image sensor technology. It includes: a current mirror circuit; a negative impedance transformation circuit, which generates negative resistance or capacitance to cancel out the parasitic resistance or capacitance of the VSL itself; and a charge / discharge acceleration circuit. This invention allows the load current source module to internally incorporate a negative impedance transformation circuit and a charge / discharge acceleration circuit. On one hand, the negative impedance transformation circuit generates negative impedance to cancel out the parasitic capacitance and resistance present in the VSL signal establishment, thereby accelerating the small signal establishment speed. On the other hand, the charge / discharge acceleration circuit provides a larger transient current to accelerate the large signal establishment speed. In other words, the load current source module in this application does not change the operating point design of the main current mirror circuit, effectively accelerating the VSL establishment time.

The application discloses a low-power-consumption common-gain adjustable metasurface based on nonlinear negative resistance, which comprises a low-power-consumption metasurface unit and a backscattering amplifier connected in series with the low-power-consumption metasurface unit; the low-power-consumption metasurface unit comprises, from top to bottom, an upper copper sheet, an upper dielectric, a metal ground, a lower dielectric and a bottom RLC switching circuit layer; wherein the upper copper sheet is connected with the bottom RLC switching circuit through a through hole; the bottom RLC switching circuit layer comprises a plurality of radio frequency switches and LC circuits or resistors embedded between the radio frequency switches; the backscattering amplifier comprises a matching circuit, the matching circuit is connected with an amplifying circuit through a direct-current isolation part, and the amplifying circuit is connected with a bias circuit through a cross isolation part. After an electromagnetic signal is input into the amplifying circuit through the bottom RLC switching circuit, the LC circuit or the resistor is selected through the radio frequency switch, the electromagnetic signal is amplified, and then the electromagnetic signal is reflected, the LC circuit or the resistor is selected through the radio frequency switch, the electromagnetic signal is transmitted to the upper copper sheet, and then the electromagnetic signal is radiated to the free space.

The application relates to the technical field of semiconductor chips, in particular to an asymmetric trigger switch surge absorption chip and a preparation method thereof. The profile structure along the width direction is left-right symmetrical structure, meanwhile, the A surface structure and the B surface structure are upper-lower asymmetrical, the trigger switch has the trigger tube characteristics and the solid discharge tube characteristics, and the trigger switch is a two-end negative resistance bidirectional trigger switch based on the thyristor principle structure. The structure chip has a wide trigger voltage range, a large voltage difference span in different directions and can be adjusted according to requirements. The voltage of the structure chip is very low in the conduction state, a large current can be passed instantaneously, and once the conduction is realized, the self-locking state is formed. The chip is turned off only when the current flowing through the chip is interrupted or less than the turn-off current.

The present invention discloses a gallium nitride-based resonant tunneling diode with multi-region differential negative resistance characteristics and a manufacturing method thereof, which mainly solves the problems of the existing gallium nitride resonant tunneling diode in achieving multi-region differential negative resistance characteristics, low series integration and poor consistency of differential negative resistance characteristics. The diode comprises, from bottom to top, a substrate, a GaN epitaxial layer, an emitter ohmic contact layer, a multi-layer composite active region, a collector ohmic contact layer and a collector electrode; the multi-layer composite active region is composed of an N-layer active region and an N-1 layer n- + This composite structure consists of alternating GaN layers arranged in series. Each active region layer comprises, from bottom to top, an isolation layer, a barrier layer, a quantum well layer, a barrier layer, and an isolation layer. The barrier layers are all made of wide-bandgap semiconductor materials. This device exhibits a differential negative resistance effect with multiple peak currents, resulting in stable device performance, consistent differential negative resistance, high reliability, and high integration. It eliminates the metal interconnects of a planar series process and can be used in multi-valued logic digital circuits and memories.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

The application discloses a phase sensor system based on a nonlinear PT symmetry principle and a detection method thereof. The sensor system comprises: a gain end resonance circuit composed of a first inductor, a first capacitor and a nonlinear negative resistance in series; a loss end resonance circuit composed of a second inductor, a second capacitor and a positive resistance in series; and a coupling capacitor connected between the gain end resonance circuit and the loss end resonance circuit and achieving energy transmission between the two circuits. The current flowing through the gain end resonance circuit is a gain side current, and the current flowing through the loss end resonance circuit is a loss side current. High-sensitivity detection of external disturbance is realized by monitoring the phase difference between the gain side current and the loss side current. The application can realize high-sensitivity detection of a to-be-detected parameter in a wide dynamic sensitive range, and simultaneously has the characteristics of rapid response and noise suppression, thereby solving the technical problem that the existing PT symmetry sensing system is difficult to simultaneously consider a large dynamic range and high sensitivity.

The present invention discloses a high-gain operational amplifier circuit based on negative resistance technology, comprising an auxiliary operational amplifier A, multiple P-type MOS transistors, multiple N-type MOS transistors, a current source IB1, and a current source IB2. The multiple P-type MOS transistors are respectively designated as PMOS transistor P1, PMOS transistor P2, and PMOS transistor P3; and the multiple N-type MOS transistors are respectively designated as NMOS transistor N1, NMOS transistor N2, NMOS transistor N3, and NMOS transistor N4. The input end of the current source IB1 and the input end of the current source IB2 are both connected to a power supply voltage. The source of the PMOS transistor P1 and the source of the PMOS transistor P2 are connected and then connected together to the output end of the current source IB1. The drain of the PMOS transistor P1 is connected to the drain of the NMOS transistor N3.

The invention discloses a grid-connected VSG low-frequency oscillation suppression strategy for reactive loop forward channel phase correction, which is characterized in that a P / Q-omega / U low-frequency small signal model of a grid-connected VSG and a power grid is constructed, and analysis is carried out by adopting an argument principle, so that the system stability depends on a determinant Z sigma (s) of the sum of equivalent P / Q-omega / U power impedance of the grid-connected VSG and the power grid. Through research, under interactive coupling of an active loop and a reactive loop, low-frequency phase lag of a grid-connected VSG reactive loop forward channel enables Zsigma (s) to have a negative resistive component, and low-frequency oscillation may be caused. In combination with an impedance passivity design theory, a feedforward additional branch is introduced into a reactive loop forward channel to carry out lead correction on phase lag of an integration element, so that suppression of low-frequency oscillation is realized. According to the invention, the active loop transient inertia damping support control and the reactive loop steady-state voltage support control of the grid-connected VSG are not changed, the structure is simple, and the method is easy to realize.

The invention discloses an orthogonal enhanced ring oscillator based on in-phase injection coupling, which belongs to the technical field of radio frequency integrated circuits and comprises a ring oscillator circuit and an orthogonal coupler circuit. The ring oscillator circuit is used for generating oscillation signals and comprises two cascaded differential ring oscillator basic units, and each stage of differential ring oscillator basic unit comprises an input pair transistor and a negative resistance pair transistor; the quadrature coupler circuit comprises a coupling transistor and four differential output nodes which are respectively connected with the first-stage differential ring oscillator basic unit and the second-stage differential ring oscillator basic unit to form an in-phase injection coupling structure. By introducing an in-phase injection coupling structure into the orthogonal enhanced ring oscillator, collaborative optimization of high-precision phase locking and low phase noise is realized, and the phase difference of multi-phase output signals is stably locked through pure switching operation on the premise of not consuming static power consumption.

The application relates to the field of integrated circuits, in particular to a K-band voltage-controlled oscillator based on a noise circulation structure, a phase-locked loop and a chip. The voltage-controlled oscillator comprises an oscillation circuit and a tuning circuit. The oscillation circuit comprises an upper resonant cavity composed of a basic oscillation circuit adopting a noise circulation structure and a lower resonant cavity composed of a noise suppression circuit adopting a Colpitts structure. The oscillation circuit adopts two groups of cross-coupled negative resistances of NMOS and PMOS, the former adopts a noise circulation structure of capacitive coupling, the latter adopts a Colpitts structure, and the two are connected through a tail inductor to improve the phase noise and power consumption of the circuit. The tuning circuit adopts a variable capacitor connected to the oscillation circuit and composed of a digital-controlled capacitor array and / or a self-tuning capacitor circuit; the capacitance value of the variable capacitor is adjusted to finely adjust the oscillation frequency. The application can solve the problem that the traditional noise circulation structure oscillator is difficult to comprehensively optimize the phase noise and power consumption.

[Problem] To provide a semiconductor device that makes it possible to improve output characteristics. [Solution] A semiconductor device according to an embodiment of the present disclosure comprises: a substrate; a conductive layer provided on the substrate; a first conductor facing the conductive layer; a first dielectric provided between the conductive layer and the first conductor; a diode electrically connected to the conductive layer and the first conductor and having a negative resistor; and at least one or more second dielectrics provided between the conductive layer and the first conductor.

This invention provides a negative resistance oscillator and inductor sensor system with multi-parameter programmable characteristics, relating to the field of electronics and electrical engineering. It includes an amplification unit, a resonant circuit, and a feedback network. The resonant circuit is connected between the non-inverting input terminal and a reference potential. The feedback network consists of first, second, and positive feedback units connected between the inverting input terminal, the output terminal, and the non-inverting input terminal. The equivalent parameter values ​​of the feedback units are configured through programming to collaboratively determine the equivalent negative resistance, matching it with the equivalent loss of the resonant circuit. The beneficial effects are that programmable parameter configuration achieves precise matching of the equivalent negative resistance with resonant circuits of different specifications, solving the problems of poor adaptability and rigid settings in traditional oscillators. Furthermore, active compensation for temperature characteristics is achieved through multi-parameter collaborative adjustment, significantly improving the system's versatility, flexibility, and stability under different hardware environments and temperature scenarios.

Embodiments of methods and semiconductor devices are described that are configured to determine a negative resistance margin (NRM) of an oscillator circuit. The semiconductor device may include an integrated circuit including an amplifier circuit coupled between a first node and a second node and NRM test circuitry including a resistor circuit selectively coupled between a first contact pad and the first node. The integrated circuit may receive an oscillating signal from an oscillator circuit coupled to the first contact pad and a second contact pad of the integrated circuit. In an NRM test mode, a resistance of the resistor circuit is selectively varied from an initial resistance value to one or more second resistance values and the oscillating signal is monitored at the second node to determine the NRM based on the one or more second resistance values when an amplitude of the oscillating signal falls below a threshold amplitude.

The utility model discloses a current compensation circuit and a chip, which are used for compensating the output current of a current type digital-to-analog converter, the current compensation circuit comprises a negative resistance unit connected with the output end of the current type digital-to-analog converter, and the negative resistance unit comprises a detection unit and a compensation unit, the detection unit generates a detection current based on an output voltage of the current-mode digital-to-analog converter. The compensation unit generates, based on the detection current, a compensation current opposite to the detection current in flow direction and for the injection node. According to the current compensation circuit and the chip, the detection unit shunts the output current of the current type digital-to-analog converter, the compensation unit generates the compensation current based on the detection current generated by shunting, the magnitude of the compensation current is adjustable, and the direction of the compensation current is opposite to that of the detection current. The output current of the current type digital-to-analog converter is compensated through the compensation current, so that the precision of the output current of the current type digital-to-analog converter under different loading conditions is improved.

The application relates to the field of integrated circuit technology and discloses an injection-locked frequency multiplier circuit with an oscillator, which comprises the following: a differential mode resonant cavity for generating a fundamental wave signal and a third harmonic signal; a first oscillator unit connected with the differential mode resonant cavity and used for providing negative resistance; an injection unit connected with the differential mode resonant cavity, the injection unit being used for converting the fundamental wave signal and the third harmonic signal into a third harmonic component; a second oscillator unit used for providing negative resistance; and a fourth-order resonant cavity connected with the second oscillator unit and the injection unit and used for coupling the third harmonic component to be output. According to the application, the fundamental wave signal generated by the differential mode resonant cavity is converted into a triple-frequency output through the injection unit, the third harmonic signal is directly enhanced to be output, the third harmonic component output by the injection unit is coupled to be output through the fourth-order resonant cavity, the phase noise of the frequency multiplier is reduced, the energy efficiency is improved, and thus the demand of the local oscillator performance for millimeter wave high-speed wireless communication can be met.