Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

101results about How to "Reduce capacitive load" patented technology

Regulated capacitive loading and gain control of a crystal oscillator during startup and steady state operation

An oscillator circuit and system are provided having a peak detector that can determine a peak voltage value from the oscillator. The peak voltage value can then be compared against a predetermined voltage value by a controller coupled to the peak detector. The comparison value is then used to change a bias signal if the peak voltage value is dissimilar from the predetermined voltage value. A variable capacitor or varactor can be formed from a transistor and is coupled to the oscillator for receiving the bias signal upon a varactor bias node. The bias signal is used to regulate the capacitance within the varactor as applied to the oscillator nodes. Another controller can also be coupled to the peak detector to produce a second bias signal if the peak voltage is dissimilar from a second predetermined voltage value. The second bias signal can then be forwarded into an amplifier having a variable gain to regulate the gain applied to the oscillator. The combination of a varactor and variable gain amplifier regulate the negative resistance applied to the resonating circuit during startup and steady state operations to ensure a relatively fast startup, and to maintain optimal loading and accurate steady state amplitude after startup has completed.
Owner:MONTEREY RES LLC

Thin film transistor array substrate, manufacturing method and liquid crystal display panel

Provided are a thin film transistor array substrate, a manufacturing method and a liquid crystal display panel. The thin film transistor array substrate comprises a substrate, a first metal layer, a first insulation layer, an active layer, a second metal layer, a second insulation layer, a third metal layer, a third insulation layer and a pixel electrode. The first metal layer is formed on the substrate and comprises a scanning line and a grid. The first metal layer is covered with the first insulation layer, and the active layer is formed on the first insulation layer. The second metal layer is formed on the first insulation layer and comprises a source electrode and a drain electrode. The second metal layer is covered with the second insulation layer, and a first contact hole and a second contact hole are formed in the second insulation layer. The third metal layer is formed on the second insulation layer and comprises a data line and a conductive block, the data line is connected with the source electrode through the first contact hole, and the conductive block is connected with the drain electrode through the second contact hole. The third metal layer is covered with the third insulation layer, and a third contact hole is formed in the third insulation layer. The pixel electrode is formed on the third insulation layer, and the pixel electrode is connected with the conductive block through the third contact hole.
Owner:KUSN INFOVISION OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products