Inverter of grid integrated driving circuit, grid integrated driver and driving method

Abstract

The invention discloses an inverter of a grid integrated driving circuit. The inverter comprises transistors T1v-T5v and a coupling capacitor C1v, a second electrode of the T1v and a second electrode of the T3v are connected with positive level VDD, a grid and a first electrode of the T1v are connected with a second electrode of the T2v, a grid of the T3v, a first electrode of the T5v and one end of the C1v, a grid of the T2v and a grid of the T4v are connected with a control signal, the grid and a second electrode of the T5v are connected with a feedback signal RSTv, a first electrode of the T2v and a first electrode of the T4v are connected with first negative level, a second electrode of the T3v and a second electrode of the T4v are connected with the other end of the C1v, and an output node QBv of the inverter is formed. The invention further discloses the grid integrated driving circuit with the inverter and a driving method of the grid integrated driving circuit. The inverter is low in power consumption and noise and excellent in anti-jamming capability, and the output pull-up transistors and the inverter are rapid in action and can work under high frequency.

Description

technical field [0001] The invention relates to gate drive technology of flat panel displays, in particular to an inverter of a gate integrated drive circuit, a gate integrated driver and a driving method. Background technique [0002] In recent years, oxide thin film transistors have received great attention, which have the characteristics of high mobility, good consistency and stable electrical properties, and the preparation cost is low. Integrating the gate driving circuit on the display is beneficial to reduce the cost of the display device and realize the thin and light design of the display device with a narrow frame. However, only N-type oxide thin film transistors can be used in circuit design, and when the gate-source voltage is zero and the source-drain voltage is greater than zero, it cannot be completely turned off, and leakage current still flows. [0003] In the gate drive circuit, the module circuit that provides the control signal of the pull-down transisto...

AI Technical Summary

Problems solved by technology

The traditional inverter is composed of a diode-connected transistor and a large-sized pull-down transistor. When the traditional inverter outputs a low level, there is a large DC loop, and due to the voltage drop on the pull-down transistor, the output of the inverter cannot minimum level reached

The clock-controlled inverter, which consists of a pull-down transistor and a clock-controlled pull-up transistor, will bring large dynamic power consumption due to the use of a clock signal, and when the clock signal goes low, the pull-up transistor will be completely turned off. At this time, for the circuit using oxide TFTs, the pull-down transistor still has a leakage current flowing. In order to keep the output of the inverter at a high level, a larger capacitor is required to maintain the voltage, which increases the circuit size. the area of

[0004] In the gate drive circuit, the more clock lines, the greater the load capacitance on the clock line, the higher the frequency, the greater the dynamic power consumption, and if the clock load differs greatly, it is easy to cause clock drift

Since the circuit maintains a low-level output time much longer than a high-level output time, multiple clocks will increase circuit noise and cause large fluctuations in the output voltage

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