50 results about "Datapath circuits" patented technology

A power management circuit is provided for controlling power dissipation in at least one combinational logic circuit. The power management circuit includes a detector operative to receive at least a first input signal to the combinational logic circuit and to detect a transition of the first input signal between a first logic state and a second logic state. The detector generates a control signal indicative of whether or not a transition of the first input signal has occurred. The power management circuit further includes a controller operative to receive the first control signal generated by the detector and to selectively disconnect the first combinational logic circuit from a power supply to the first combinational logic circuit when no logic transition of the first input signal is detected between a preceding computational cycle and a present computational cycle of the first combinational logic circuit, and to connect the first combinational logic circuit to the power supply when a logic transition of the first input signal is detected.

A datapath circuit may include a digital multiply and accumulate circuit (MAC) and a digital hardware calculator for parallel computation. The digital hardware calculator and the MAC may be coupled to an input memory element for receipt of input operands. The MAC may include a digital multiplier structure with partial product generators coupled to an adder to multiply a first and second input operands and generate a multiplication result. The digital hardware calculator may include a first look-up table coupled between a calculator input and a calculator output register. The first look-up table may include table entry values mapped to corresponding math function results in accordance with a first predetermined mathematical function. The digital hardware calculator may be configured to calculate, based on the first look-up table, a computationally hard mathematical function such as a logarithm function, an exponential function, a division function and a square root function.

A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks.

An architecture for a wide data path in a memory device formed in a semiconductor substrate includes an array of memory cells is formed in an array region of the substrate, the array including a plurality of memory cells arranged in rows and columns. A plurality of complementary pairs of digit lines are formed in the array region from a first conductive layer, each complementary pair being coupled to a plurality of memory cells in an associated column. A plurality of word lines are formed in the array region from a second conductive layer, each word line being coupled to each memory cell in an associated row. A plurality of sense amplifiers are formed in a sense amplifier region of the substrate adjacent the array region, each sense amplifier being coupled to an associated pair of complementary digit lines. A plurality of input / output lines are disposed in a third conductive layer formed above the array region, each input / output line coupled to at least one of the sense amplifiers. At least one column select line is disposed in a portion of the third conductive layer formed above the sense-amplifier region, each column select line being coupled to at least some of the sense amplifiers. The memory device also includes a row address decoder, column address decoder, data path circuit, and control circuit that operate in response to signals applied on respective busses to transfer data to and from the memory device. The architecture may be used, for example, in packetized DRAMs, such as SLDRAMs, and in Embedded DRAMs.

An element selection unit (200) and a method therein for vector element selection. The element selection unit comprises a selector control circuit (404) and a selector data path circuit (406), which data path circuit comprises a plurality of layers of multiplexers. The element selection unit further comprises a receiving circuit (401) configured to receive an instruction to perform a selection of elements from an input vector. The selector control circuit (404) is configured to generate a multiplexer control signal for each multiplexer based on a bit map and on a plurality of relative offset values. The data path circuit is configured to propagate the elements comprised in the input vector through the plurality of layers of multiplexers towards an output vector based on the generated multiplexer control signals. The data path circuit is further configured to write the propagated elements to enabled elements of the output vector.

A write burst stop command function is provided for a semiconductor memory device, and in particular for a memory device having a write latency, such as is common in a low power double data rate (DDR) dynamic random access memory (DRAM) device. In the memory device, when a write stop command is received, pulses that are generated for a column address strobe signal are terminated so that no further data already in the memory device is transferred into a memory array. When the write stop command is received at the beginning of a write operation prior to generation of the pulses in the column address strobe signal, a first-in first-out (FIFO) circuit is reset. The FIFO circuit is used to introduce a predetermined write latency to the write operation. The column address strobe signal is supplied to a column decoder associated with the memory array and to a data path circuit that transfers data to the memory array based on pulses in the column address strobe signal. In one embodiment, the pulses for the column address strobe signal are produced by a latch circuit based on a signal derived from the output of the write latency FIFO circuit and so an input to the latch is disabled in response to the write stop command to stop producing pulses for the column address strobe signal.