554 results about "Memory architecture" patented technology

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells in NOR or NAND memory architectures that allow for direct tunnel programming and erase, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The low voltage direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and enhancing device lifespan. The low voltage direct tunnel program and erase capability also enables size reduction through low voltage design and further device feature scaling. Memory cells of the present invention also allow multiple bit storage. These characteristics allow memory device embodiments of the present invention to operate within the definition of a universal memory, capable of replacing both DRAM and ROM in a system.

A full service cable television system and method are provided. The system comprises a cable headend, at least one fiber transport, at least one distribution hub, at least one hybrid fiber coax plant, and a plurality of set-top terminals. The system delivers television programs, advanced cable services, and online services. Programs and services are transmitted to the set-top terminals in both digital and analog formats to maintain downward compatibility with existing systems. The set-top terminal includes a central processing unit, a unified memory architecture, a memory management unit, communications circuitry, I/O control circuitry, and audio and video output circuitry. Through these components, the set-top terminal provides advanced cable services such as a comprehensive channel navigator, an interactive program guide, impulse Pay-Per-View, Near-Video-On-Demand and Video-On-Demand programming, and advanced configuration controls. The set-top terminal also provides online services such as World Wide Web browsing, Internet e-mail, and home shopping.

A portion of a nonvolatile memory is partitioned from a main multi-level memory array to operate as a cache. The cache memory is configured to store at less capacity per memory cell and finer granularity of write units compared to the main memory. In a block-oriented memory architecture, the cache has multiple functions, not merely to improve access speed, but is an integral part of a sequential update block system. Decisions to write data to the cache memory or directly to the main memory depend on the attributes and characteristics of the data to be written, the state of the blocks in the main memory portion and the state of the blocks in the cache portion.

A 3D memory device includes a plurality of ridge-shaped stacks of memory cells. Word lines are arranged over the stacks of memory cells. Bit lines structures are coupled to multiple locations along the stacks of memory cells. Source line structures are coupled to multiple locations along each of the semiconductor material strips of the stacks. The bit line structures and the source line structures are between adjacent ones of the word lines.

A portion of a nonvolatile memory is partitioned from a main multi-level memory array to operate as a cache. The cache memory is configured to store at less capacity per memory cell and finer granularity of write units compared to the main memory. In a block-oriented memory architecture, the cache has multiple functions, not merely to improve access speed, but is an integral part of a sequential update block system. The cache memory has a capacity dynamically increased by allocation of blocks from the main memory in response to a demand to increase the capacity. Preferably, a block with an endurance count higher than average is allocated. The logical addresses of data are partitioned into zones to limit the size of the indices for the cache.

A memory architecture includes a first substrate containing multiple memory devices and a first channel portion extending across the first substrate. The architecture further includes a second substrate containing multiple memory devices and a second channel portion extending across the second substrate. A connector couples the first channel portion to the second channel portion to form a single channel. The connector includes a first slot that receives an edge of the first substrate and a second slot that receives an edge of the second substrate. Another connector has a pair of slots that receive opposite edges of the first and second substrates. The channel portions extend across the substrates in a substantially linear path. Each channel portion includes multiple conductors having lengths that are approximately equal.

A 3D memory device includes a plurality of ridge-shaped stacks, in the form of multiple strips of conductive material separated by insulating material, arranged as bit lines which can be coupled through decoding circuits to sense amplifiers. Diodes are connected to the bit lines at either the string select of common source select ends of the strings. The strips of conductive material have side surfaces on the sides of the ridge-shaped stacks. A plurality of word lines, which can be coupled to row decoders, extends orthogonally over the plurality of ridge-shaped stacks. Memory elements lie in a multi-layer array of interface regions at cross-points between side surfaces of the semiconductor strips on the stacks and the word lines.

In a computer system with a non-segmented, region-based memory architecture, such as Intel IA-64 systems, two or more sub-systems share a resource, such as a virtual-to-physical address mapping and need to have overlapping regions of the virtual address space for accessing different physical addresses. Virtual addresses include a portion that is used to identify which region the issuing sub-system wants to access. For example, the region-identifying portion of virtual addresses may select a region register whose contents point to a virtual-to-physical address mapping for the corresponding region. To protect a second sub-system S2 from a first S1, whenever the S1 issues an address in a region occupied by S2, the region for the S2 is changed. This allows S1 to issue its addresses without change. In a preferred embodiment of the invention, S2 is a virtual machine monitor (VMM) and S1 is a virtual machine running on the VMM.

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in floating gate memory cells in NOR or NAND memory architectures that allow for direct tunneling programming and erase with electrons and holes, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and leakage issues and enhancing device lifespan. Memory cells of the present invention also allow multiple bit storage in a single memory cell, and allow for programming and erase with reduced voltages. A positive voltage erase process via hole tunneling is also provided.

A portion of a nonvolatile memory is partitioned from a main multi-level memory array to operate as a cache. The cache memory is configured to store at less capacity per memory cell and finer granularity of write units compared to the main memory. In a block-oriented memory architecture, the cache has multiple functions, not merely to improve access speed, but is an integral part of a sequential update block system. Decisions to archive data from the cache memory to the main memory depend on the attributes of the data to be archived, the state of the blocks in the main memory portion and the state of the blocks in the cache portion.

The present invention provides an improved cache memory architecture with way prediction. The improved architecture entails placing the address tag array of a cache memory on the central processing unit core (i.e. the microprocessor chip), while the cache data array remains off the microprocessor chip. In addition, a way predictor is provided in conjunction with the improved memory cache architecture to increase the overall performance of the cache memory system.

A process and a memory architecture for operating a charge trapping memory cell is provided. The method for operating the memory cell includes establishing a high threshold state in the memory cell by injecting negative charge into the charge trapping structure to set a high state threshold. The method includes using a self-converging biasing procedure to establish a low threshold state for the memory cell by reducing the negative charge in the charge trapping structure to set the threshold voltage for the cell to a low threshold state. The negative charge is reduced in the memory cell by applying a bias procedure including at least one bias pulse. The bias pulse balances charge flow into and out of the charge trapping layer to achieve self-convergence on a desired threshold level. Thereby, an over-erase condition is avoided.

Non-volatile memory devices and arrays are described that utilize back-side trapped floating node memory cells with band-gap engineered gate stacks with asymmetric tunnel barriers. Embodiments of the present invention allow for direct tunneling programming and efficient erase with electrons and holes, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention and reduces the possibility of damage to the channel/insulator interface. The direct tunneling program and efficient erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and leakage issues and enhancing device lifespan. Memory device embodiments of the present invention are presented that are arranged in NOR or NAND memory architecture arrays. Memory cell embodiments of the present invention also allow multiple levels of bit storage in a single memory cell, and allow for programming and erase with reduced voltages.

Memory architecture provides capabilities for high performance content search. The architecture creates an innovative memory that can be programmed with content search rules which are used by the memory to evaluate presented content for matching with the programmed rules. When the content being searched matches any of the rules programmed in the Programmable intelligent Search Memory (PRISM) action(s) associated with the matched rule(s) are taken The PRISM content search memory is embedded in a single core or multi-core processors or in multi-processor systems to perform content search. PRISM accelerates content search by offloading the content search tasks from the processors. Content search rules comprise of regular expressions which are converted to finite state automata and then programmed in PRISM for evaluating content with the search rules.