98 results about "Universal memory" patented technology

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells in NOR or NAND memory architectures that allow for direct tunnel programming and erase, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The low voltage direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and enhancing device lifespan. The low voltage direct tunnel program and erase capability also enables size reduction through low voltage design and further device feature scaling. Memory cells of the present invention also allow multiple bit storage. These characteristics allow memory device embodiments of the present invention to operate within the definition of a universal memory, capable of replacing both DRAM and ROM in a system.

Mechanisms and techniques operate in a computerized device to perform a memory management technique such as garbage collection. The mechanisms and techniques operate to detect, within a storage structure associated with a thread, general memory references that reference storage locations in a general memory area such as a heap. The storage structure may be a stack utilized by the thread, which may be, for example, a Java thread, during operation of the thread in the computerized device. The system maintains a reference structure containing an association to the general memory area for each detected general memory reference within the storage structure. The system then operates a memory management technique on the general memory area for locations in the general memory area other than those for which an association to the general memory area is maintained in the reference structure, thus increasing the performance of the memory management technique.

A hand-portable electronic device configured for hardware-initiated automated back-up, comprising: an internal memory for storing data; an interface for connection and disconnection to any one of a plurality of generic memory modules; a user interface that enables a user of the device to specify the generic memory module connected to the interface for automated back-up of data stored in the internal memory; a controller for automatically backing up data, on connection of a generic memory module to the interface, from the internal memory to the connected generic memory module if the connected generic memory module is identified as a generic memory module that has previously been specified for back-up via the user interface.

A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.

The present invention is related to a device and method for processing a cell group in a common memory switch, in which output ports in the common memory switch are divided into an individualized output port group associated with only one output port and a grouped output port group associated with a plurality of output ports, wherein each output port is assigned to a unique group number.

The invention provides a method for measuring thickness or defect depth by a pulse infrared thermal wave technology, comprising the following steps of (1) heating an object to be measured by pulse heating equipment; obtaining a thermographic sequence on the surface of the object to be measured by an infrared thermal imaging device; memorizing the thermographic sequence in a general memory; (2) multiplying a temperature-time curve of each point in the thermaographic sequence with corresponding time, thus obtaining a new curve f; (3) working out first-order differential on the f; and obtaining a peak time tapst; (4) working out L by a formula, wherein Alpha is thermal diffusion coefficient and L is the thickness or the defect depth of the object to be measured. By adopting the technical scheme, the thickness or detect depth of a part to be measured can be measured, a reference curve is not needed, and only one-order differential treatment is needed for the measurement, so that the processing method is simpler.

The present invention relates to key management in a secure microcontroller, and more particularly, to systems, devices and methods of automatically and transparently employing logic or physical address based keys that may also be transferred using dedicated buses. A cryptographic engine translates a logic address to at least one physical address, and processes a corresponding data word based on at least one target key. The target key is selected from a plurality of keys based on the logic or physical address. A universal memory controller stores each processed data word in the corresponding physical address within a memory. Each key is associated with a memory region within the memory, and therefore, the logic or physical address associated with a memory region may be used to automatically identify the corresponding target key. A dedicated secure link may be used to transport key request commands and the plurality of keys.

The invention discloses a universal floating point matrix processor hardware structure based on an FPGA (field programmable gate array). The universal floating point matrix processor hardware structure comprises a plurality of matrix operation accelerators, a plurality of shared matrix buffer memories, a main processor, an instruction dispatcher, a direct access controller, an arbiter, an external memory and a memory management unit, the shared matrix buffer memories provide universal memory spaces and support high-speed communication on chips between the accelerators, the main processor transmits instructions, dispatches operation and calculates addresses, the instruction dispatcher inspects whether the instructions have occupying conflict or not, the direct access controller finishes data transmission, the arbiter distributes data, the external memory provides buffer, and the memory management unit provides an access interface. The hardware structure can realize 'matrix-matrix' operation on a universal platform, software programs can be modified on the main processor according to different applications, a matrix operation accelerator structure can be conveniently inserted to support various matrix operations, the universal floating point matrix processor hardware structure has high design flexibility and has the advantages of lower energy consumption and higher calculated performance as compared with an embedded processor performing the matrix operations in the past.

A memory device such as a solid state memory device have a dual-hardware, secure erase feature. A memory controller operating in a memory controller domain provides general memory management and interface operons. Upon receipt of a trigger signal which may be received from a secure supervisor circuit, a separate processor element that is configured to directly access the raw memory cells in the device bypasses the memory controller domain and executes a separately provided secure erase operating system whereby the raw cell data may be erased and rewritten with a predetermined data pattern and whereby the erase operation at the raw cell level may be verified and reported to the user by the processor.

A universal memory card adapter is disclosed to have a movable door horizontally pivotally mounted in a stepped receiving open side thereof to control insertion of different memory cards, which movable door has a doorplate pivotally mounted in the stepped receiving open side and dividing the stepped receiving open side into an open type insertion slot and a sheltered insertion slot to match the insertion of different memory cards, a spring member for holding the doorplate in a normal close position, and a control spring strip, which normally stops the doorplate in the normal close position and is disconnected from the doorplate upon insertion of a matching memory card.

The invention discloses a remote communication security management architecture of a ubiquitous green community control network and a method for constructing the same. For a remote communication process of a ubiquitous green community control network, information transmission and invoking are carried out by a backbone network based on a TCP/IP protocol. According to the security management architecture, on the basis of a ubiquitous green community control network, a new security management center is deployed; security management modules are added to a gateway and terminal equipment, so that the gateway and the terminal equipment are updated as a secure gateway and a secure terminal; and a memory is divided into a general-purpose memory and a core memory and an application unit is further divided into a service type application unit and a user type application unit. According to the disclosed security management method, distributed security management is realized and level-to-level security management with different security levels is supported. And under the precondition that an original network architecture is changed little, effective security guarantees can be realized for the remote communication process of the ubiquitous green community control network by supports for distributed and level-to-level management.

Embodiments disclosed herein generally relate to switches that utilize micro-electromechanical systems (MEMS). By replacing transistors in many devices with switches such as MEMS switches, the devices may be used for logic applications. MEMS switches may be used in devices such as FPGAs, NAND devices, nvSRAM devices, AMS chips and general memory logic devices. The benefit of utilizing MEMS devices in place of transistors is that the transistors utilize more space on the chip. Additionally, the MEMS devices can be formed in the BEOL without having any negative impacts on the FEOL or necessitating the use of additional layers within the chip.

An information handling system universal memory architecture assigns memory blocks to information handling system functions, such as a persistent storage function and a working storage function, that have different relative rates of writes of information. The blocks are periodically analyzed for remaining memory life to reassign blocks to functions that result in wear leveling across the blocks. For example, blocks having relatively low life remaining that are assigned to functions having a relatively high number of writes have their function switched with blocks that have a relatively high life remaining that are assigned to functions having a relatively low number of writes. In addition, wear leveling performed within a block ensures even wear of the memory cells within the block.

A refresh control circuit of a volatile semiconductor memory device is provided, where the volatile semiconductor memory device includes a plurality of memory cells respectively having a select transistor and a memory element, and the refresh control circuit of the volatile semiconductor memory device includes: a first comparison part, which compares a memory voltage of the memory cell of the volatile semiconductor memory device that is different to a general-memorizing memory cell with a specified threshold voltage, and outputs a comparison result signal, and stops self refresh of the memory cell until the memory voltage is decreased to be smaller than the specified threshold voltage. The memory cell is formed in a region adjacent to an array of the general-memorizing memory cell.

The embodiment of the invention provides a message processing method and a forwarding device. The forwarding device comprises a special processor, a universal processor, a special memorizer and a universal memorizer. When the forwarding device processes a message, the special processor obtains first matching information, looks for a first table in the special memorizer so as to determine search information corresponding to the first matching information, and further sends the message and the search information to the universal processor, and then the universal processor looks for a second table in the universal memorizer with the search information as the index so as to determine a corresponding instruction set and process the message. In this way, when the forwarding device processes the message, the found matching information of the flow tables and the found instruction set are stored in the special memorizer and the universal memorizer respectively, and the flow tables can be stored by reasonably utilizing storage space of the special memorizer of the forwarding device.

In a memory card connector, a pivot shaft member is pivotally provided in a front side of the insertion hole for memory card for controlling the gap of the insertion hole for the insertion of a different memory card. The pivot shaft member has a protruding portion protruded from the periphery, and a guide block extending from the protruding portion for guiding the insertion of a thin type memory card into the insertion hole in horizontal. Insertion of a thick memory card into the insertion hole forces the protruding portion to rotate the pivot shaft and to hold down the front row of terminals in the memory card connector, preventing deformation or damage of the terminals due to improper insertion of the memory card into the insertion hole.

The invention relates to a device and a method used by a single port storage for realizing a multi-port storage function. The device comprises a general storage and also comprises at least two external access ports, a parallel serial interface circuit and an internal storage unit access port, wherein each port at least comprises a data terminal, an address terminal, a chip selection terminal and a control terminal to realize the input and output of the data; the parallel serial interface circuit is connected with an external access port to complete the parallel serial conversion of the external data and arbitrate the control signals of the external ports; the general storage is connected with the parallel serial interface circuit together by the internal storage unit access port; according to the processing of the parallel serial interface circuit, the data is written into the general storage or the data is read from the general storage, thereby realizing the multiport storage via the single port storage, saving the storage area, improving the storage performance and reducing the cost.

Provided is a display switching apparatus that reduces delayed display, and the like, of frame images. An information processing terminal 1 is provided with a first rendering component 61 that, in each first time interval, generates and writes an image to a buffer, a second rendering component 62 that, in each second time interval, generates and writes an image to a buffer, a frame buffer management unit 11 that allocates a high-speed frame buffer 31 on a high-speed memory device 18 and a universal frame buffer 32 on a universal memory device 19, and a display switching apparatus 12 that includes a switching determination unit 81 that repeatedly calculates a rendering load for each rendering component and a switching performance unit 82 that switches the buffers allocated to the rendering components when the high-speed frame buffer 31 is not allocated to the rendering component with the higher rendering load.

A memory card connector having an electrically insulative casing covered with a top cover to house first pins at the front side for the contact of a XD memory card, second pins at the rear side for the contact of a MS memory card, and third pins on the middle for the contact of other memory cards. The casing has an elongated slot in the bottom wall, and a spring arm with a protruding block suspending in the elongated slot to hold the power pin of the first pins, for enabling the power pin to be lowered with the spring arm into the elongated slot to prevent the occurrence of a short circuit accidentally upon insertion of a memory card that is not a XD memory card.

The present invention provides an arithmetic circuit and an arithmetic method, the purpose of which is to solve the bottleneck problem encountered by a Montegomery multiplier in memory access by using a general memory with a double port or a single port. Two memories 7 and 8 are provided so that variables that are stored in the memory and must be read for operation can be recorded in different memories. Thereafter, in the reading stage corresponding to the pipeline processing, a certain variable is read from the memory 7 and loaded into the register 5, and at the same time, other variables are read from the memory 8 and loaded into other registers.