Universal memory device simulator

Abstract

The invention discloses a universal memory device simulator. The universal memory device simulator is characterized by comprising a voltage-control floating ground impedance conversion module and a current integration module; the voltage-control floating ground impedance conversion module is used for implementing linear voltage-control resistance, voltage-control capacitance and voltage-control inductance, the current integration module is used for implementing current integration operation, the voltage-control floating ground impedance conversion module comprises a first current feedback operational amplifier, a second current feedback operational amplifier, a third current feedback operational amplifier, a fourth current feedback operational amplifier, a field-effect transistor, a first resistor, a second resistor, a first impedance component and a second impedance component, and the current integration module comprises a fifth current feedback operational amplifier, a capacitor and a direct-current voltage source. The universal memory device simulator has the advantages that the impedance components with different properties can access the universal memory device simulator under the conditions that circuit topological structures are unchanged, accordingly, memristor, memcapacitor and meminductor can be respectively implemented, and the integral universal memory device simulator can be implemented by the aid of only few devices and is simple in structure, low in production cost and wide in application range.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a general memory device simulator. Background technique [0002] In 2008, the HP laboratory used nanotechnology to physically realize nonlinear resistors with "memory" characteristics, thus confirming the concept of memristor and related theories proposed by Professor Cai Shaotang in 1971. The memristor builds up the magnetic flux The relationship between the charge q and the resistance value is related to the history of the current flowing. Since memory effect is a common phenomenon in nanomaterials, in November 2008, Professor Cai Shaotang proposed the related concepts of memcapacitor and meminductor. Memristors, memristors and memensors are collectively referred to as memory devices in the academic world. Unlike memristors, memristors and memristors do not consume energy during operation, and are energy storage devices, so they can be used in low power consumption. It h...

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Problems solved by technology

Also, this circuit has a single function and can only simulate the electrical behavior of the memcapacitor, and can only realize the ground connection

[0006] Li Zhijun et al. used two differential differential current conveyors (DVCC) to construct a general memory device simulator (Li Zhijun. A floating memristor-based memristor and memristor simulator; China, 201310524634.2 [P] .2014-01-22), the simulator can convert memristors into memcapacitors and memristors respectively, but the simulator must include the analog equivalent circuit of memristors, making the circuit very complicated

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