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72 results about "Voltage controlled resistor" patented technology

A voltage-controlled resistor (VCR) is a three-terminal active device with one input port and two output ports. The input-port voltage controls the value of the resistor between the output ports.

Automatic gain control circuit of multistage high dynamic range used in ultrasonic distance measurement

The invention relates to an automatic gain control circuit of multistage high dynamic range used in an ultrasonic distance measurement, which comprises n stages of sequentially and serially connected amplifying circuits; the input terminal of a first stage is connected with an input signal; the nth output forms an output signal which goes through sequentially a serially connected sampling circuit, a PID circuit and an amplitude limiter circuit, and then is respectively connected with each technotron; and the signal input terminal of the PID circuit is also connected with a given circuit. Each stage of amplifying circuit comprises an operational amplifier, non-inverting input terminals and inverting input terminals of all the operational amplifiers are respectively connected with the drain electrode of one technotron, the source electrode of each technotron is grounded, the grid electrode of the technotron connected with the inverting input terminal of the operational amplifier is connected with the output terminal of the amplitude limiter circuit, and the grid electrode of the technotron connected with the non-inverting input terminal of the operational amplifier is grounded. The control circuit can lead the amplification times to be stabilized in a given value. Simultaneously, the dynamic range is improved by adopting multistage amplification, and the gain is controlled by adopting a voltage controlled resistor so as to lead the gain to be stepless adjustable.
Owner:TIANJIN UNIV

Universal memory device simulator

The invention discloses a universal memory device simulator. The universal memory device simulator is characterized by comprising a voltage-control floating ground impedance conversion module and a current integration module; the voltage-control floating ground impedance conversion module is used for implementing linear voltage-control resistance, voltage-control capacitance and voltage-control inductance, the current integration module is used for implementing current integration operation, the voltage-control floating ground impedance conversion module comprises a first current feedback operational amplifier, a second current feedback operational amplifier, a third current feedback operational amplifier, a fourth current feedback operational amplifier, a field-effect transistor, a first resistor, a second resistor, a first impedance component and a second impedance component, and the current integration module comprises a fifth current feedback operational amplifier, a capacitor and a direct-current voltage source. The universal memory device simulator has the advantages that the impedance components with different properties can access the universal memory device simulator under the conditions that circuit topological structures are unchanged, accordingly, memristor, memcapacitor and meminductor can be respectively implemented, and the integral universal memory device simulator can be implemented by the aid of only few devices and is simple in structure, low in production cost and wide in application range.
Owner:XIANGTAN UNIV

Annular high-speed voltage-controlled oscillator

The invention discloses an annular high-speed voltage-controlled oscillator. The annular high-speed voltage-controlled oscillator is formed by series connection of four levels of delay units, wherein the negative output end (Vout-) of each level of delay unit is connected with the positive input end (Vin+) of a corresponding next level of delay unit, the positive output end (Vout+) of each level of delay unit is connected with the negative input end (Vin-) of a corresponding next level of delay unit, the negative output end (Vout-) of the last level of delay unit is connected with the negative input end (Vin-) of the first level of delay unit, and the positive output end (Vout+) the last level of delay unit is connected with the positive input end (Vin+) of the first level of delay unit. According to the annular high-speed voltage-controlled oscillator, an active electrical inductance structure is additionally arranged based on traditional delay units, a pair of PMOS tubes with grid electrodes connected to the ground are additionally arranged at a load end, therefore, oscillation of a circuit within the whole voltage range is guaranteed, extra electric currents can be provided for the circuit, and the oscillation frequency is improved; a control voltage is connected to the grid electrodes of the pair of PMOS tubes so that the frequency of the delay units can be controlled, and the PMOS tubes serve as voltage-controlled resistors and are used for adjusting the oscillating frequency.
Owner:NANJING UNIV OF POSTS & TELECOMM INST AT NANJING CO LTD

Multifunctional internal combustion arc welding generator

InactiveCN102035300ARealize precise control effectExcellent dynamic indexMagnetic circuit stationary partsMechanical energy handlingCapacitanceSilicon-controlled rectifier
The invention relates to a multifunctional internal combustion arc welding generator. The generator comprises an internal combustion engine, a generator rotor, a trigger circuit, a silicon controlled rectifier switch, a three-phase bridge rectifier, an auxiliary power supply rectifier circuit, an excitation current adjusting circuit, a generator stator, a first switch tube T1, a second diode D2, a first capacitor C1, a first diode D1 and a chopping main loop. The invention provides a structure of a voltage controlled resistor and a control mode aiming at the problem of difficulty in parallel current sharing of a chopping switch tube; the controlled resistor is controlled by an outer ring negative feedback control loop consisting of a photoelectric coupler, an outer ring control circuit, an outer ring given circuit, an outer ring hall current sensor and a voltage sampling circuit; a constant current, constant current and out-pulling and flat hard external characteristic curve is outputby selecting and switching a feedback signal output by the outer ring hall current sensor and the voltage sampling circuit; thus the requirements of argon arc welding, low-hydrogen electrode manual arc welding and cellulose electrode vertical down welding on the external characteristic curve and the welding process performance of a welding machine are met.
Owner:CHONGQING YUNDA TECH

Extremely-simple floating ground charge-controlled memristor circuit simulation model

The invention discloses an extremely-simple floating ground charge-controlled memristor circuit simulation model. The model comprises a port a, a port b, a voltage-controlled resistor UR, a resistor R, a current-controlled voltage source IU and a voltage integrator A; the voltage-controlled resistor UR comprises a voltage control end uc and a controlled resistor Ru; the resistance value of the controlled resistor Ru in the voltage-controlled resistor UR is controlled by the voltage value of the voltage control end uc; the current-controlled voltage source IU comprises a current control end i and a voltage source output end ui; the voltage value of the voltage source output end ui in the current-controlled voltage source IU is controlled by the current value of the current control end i; and the voltage integrator A comprises a voltage input end ui and a voltage output end uc. According to the floating ground charge-controlled memristor circuit simulation model provided by the invention, electrical characteristics of the ports a and b are equivalent to the characteristics of the ports A and B of a memristor M; only four elements existing in simulation software need to be used; and besides, the floating ground charge-controlled memristor circuit simulation model is a two-port model, thus the complexity and the number of components of the existing charge-controlled memristor circuit simulation model are further reduced, and the model has the advantages that the grounding of one end is not required, the change range of the memristance is flexible, and the working voltage rangeis wide.
Owner:CHENGDU NORMAL UNIV

Current fractional order integral control type memristor

The invention discloses a current fractional order integral control type memristor, which includes a pin a, a pin b, a voltage-controlled resistor UR, a resistor R, a current controlled voltage sourceIU and a voltage fractional integrator A, the voltage-controlled resistor UR includes a voltage control terminal uc and a controlled resistor Ru, A resistance value of a controlled resistor Ru in a voltage controlled resistor UR is controlled by a voltage value of a voltage control terminal uc, the current control voltage source IU comprises a current control terminal i and a voltage source output terminal ui. The voltage value of the voltage source output terminal ui in the current control voltage source IU is controlled by the current value of the current control terminal i. The voltage fractional integrator A comprises a voltage input terminal ui and a voltage output terminal uc. The electrical characteristics of the pins a and b of the current fractional-order integral control memristor are equivalent to those of the pins A and B of the memristor M. The current fractional-order integral control memristor is two pins, which further reduces the complexity and the number of components of the existing current fractional-order integral control memristor. The current fractional-order integral control memristor has the advantages of not requiring one end of the pins to be grounded, flexible variation range of the memristor value, and wide working voltage range.
Owner:CHENGDU NORMAL UNIV

Silicon carbide Schottky diode-based Spice model and construction method thereof

The invention discloses a silicon carbide Schottky diode-based Spice model and a construction method thereof. The model comprises a voltage-controlled capacitor, a voltage-controlled resistor, a voltage-controlled body resistor, and a contact resistor, wherein the voltage-controlled capacitor is used for indicating the depletion layer capacitance of the silicon carbide Schottky diode; the voltage-controlled resistor is connected with the voltage-controlled capacitor in parallel and used for indicating the depletion layer current of the silicon carbide Schottky diode; the voltage-controlled body resistor is in series connection with parallel connection nodes of the voltage-controlled capacitor and the voltage-controlled resistor, and used for indicating the body resistance of the silicon carbide Schottky diode; the contact resistor is connected with the voltage-controlled body resistor in series. The silicon carbide Schottky diode-based Spice model disclosed by the invention has the advantage that the obtained diode dynamic curve is well matched with the experimental data. The model can be used for evaluating dynamic performance of the diode accurately and also used for guiding design and application of the silicon carbide Schottky diode.
Owner:TSINGHUA UNIV
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