3 results about "Voltage controlled resistor" patented technology

The present invention provides a non-volatile semiconductor memory device and a current-assisted voltage-controlled resistor that can supply an optimal voltage to each memory cell according to the state of the memory cell. [Solution] The non-volatile semiconductor memory device has a resistor element 10 and a current assist element arranged in parallel between the first voltage control line VCL1 and the second voltage control line VCL2, so that the optimal voltage can be supplied to each antifuse memory M arranged in the row direction via either the resistor element 10 or the current assist element depending on the state of the antifuse memory M.

This application provides a voltage-controlled resistor (VCR) adjustable termination resistor circuit and system based on mirror control, relating to the field of high-speed serial transmitter design technology. It includes: a working path, a mirror path, and a control loop; the mirror path and the working path operate in the same environment; the control loop applies control voltages to the VCR in the working path and the mirror VCR in the mirror path respectively to control their resistance values; the control loop compares the critical node voltage at the output of the mirror VCR with the reference voltage of a reference voltage source, and outputs a control voltage based on the real-time voltage deviation. The voltage-controlled resistor (VCR) adjustable termination resistor circuit and system provided in this application uses a mirror backup termination resistor to detect the impedance of the termination resistor in real time, and adjusts the termination resistor value in real time when the chip voltage and temperature change, to meet the termination resistor requirements of the high-speed serial interface.

The application discloses a kind of LDO composite zero point tracking compensation circuits, including error amplifier (AMP1), buffer (BUF), compensation MOS tube (Mc), compensation capacitor (Cc), first resistance (R1), second resistance (R2), first MOS tube (M11), second MOS tube (M12), third MOS tube (M13), fourth MOS tube (M14), fifth MOS tube (M15), sixth MOS tube (M16), seventh MOS tube (M17) and eighth MOS tube (M18).The application can improve the technical problem that the movement rate of single voltage-controlled resistance generated zero point and output pole does not match, make the movement rate of zero point also proportional to load current, ensure that the movement rate of zero point and the movement rate of output pole are same, so as to realize the global effective compensation of LDO completely.