Very simple floating magnetic control memristor circuit simulation model

Abstract

The invention discloses a very simple floating magnetic control memristor circuit simulation model which comprises a port a, a port b, a voltage controlled resistor UR, a resistor R and a voltage integrator A. The voltage controlled resistor UR comprises a voltage control end uc and a controlled resistor Ru; a resistance value of the controllable resistor Ru in the voltage controlled resistor UR is controlled by a voltage value of the voltage control end uc; and the voltage integrator A comprises a voltage input end u and a voltage output end uc. Electrical characteristics of the ports a and bof the floating magnetic control memristor circuit simulation model are equivalent to characteristics of A and B ports of a magnetic control memristor W, only needs to use existing three elements insimulation software, and is a two-port model; complexity and the element number of an existing magnetic control memristor circuit simulation model are further reduced; and the very simple floating magnetic control memristor circuit simulation model has the advantages of flexible memristive value changing range, no grounding limitation, wide working voltage range and easiness for understanding.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a minimalist floating magnetron memristor circuit simulation model. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, starting from the completeness of circuit theory, predicted that in addition to resistance, capacitance and inductance, there was a fourth passive basic circuit element that represented the relationship between charge and magnetic flux, and named it For the memristor (memristor). In 2008, HP Labs published research results in the journal Nature, announcing the physical realization of a two-terminal device with memristor characteristics. The breakthrough of Hewlett-Packard Labs has aroused widespread concern in academia and industry, setting off an upsurge of people's research on memristors. [0003] A memristor is a nonlinear resistor whose resistance value can chan...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an extremely simple floating magnetron memristor circuit simulation model, which solves the problem that the existing magnetron memristor circuit simulation model requires one end to be grounded, is not a two-port model, and the voltage of the two ports cannot exceed the model. The supply voltage of internal active devices and the complex structure of the required components

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