393 results about "Nonlinear resistor" patented technology

A control system includes a nonlinear delta-sigma modulator, and the nonlinear delta-sigma modulator includes a nonlinear process model that models a nonlinear process in a signal processing system, such as a nonlinear plant. The nonlinear delta-sigma modulator includes a feedback model that models the nonlinear process being controlled and facilitates spectral shaping to shift noise out of a baseband in a spectral domain of a response signal of the nonlinear process. In at least one embodiment, the nonlinear delta-sigma modulator is part of a control system that controls power factor correction and output voltage of a switching power converter. The control system controls the pulse width and period of a control signal to control power factor correction and the output voltage level. In at least one embodiment, the nonlinear delta-sigma modulator generates a signal to control the pulse width of the control signal.

A multilevel reference generator has a plurality of nonlinear standard resistive elements where each resistive element is biased at a constant level to develop a resultant level. The multilevel reference generator has a plurality of mirror sources. Each mirror source is in communication with the one of the plurality of resistive elements such that each mirror source receives the resultant level from the one standard resistive element and provides a mirrored replication of the resultant level. The multilevel reference generator has a plurality of reference level combining circuits. The reference level combining circuit includes a resultant level summing circuit that additively combines the first and second mirrored replication level and a level scaling circuit to create a scaling of the combined first and second mirrored replication levels to create the reference level.

A floating gate MOS transistor comprises one or more control gates, an active channel, and at least one floating gate disposed between the control gate(s) and the active channel. First and second non-linear resistances couple the floating gate to first and second control voltage sources respectively, the non-linear resistances forming a voltage divider network which sets the operating voltage of the floating gate.

To simplify a manufacturing process of a transverse electric field mode liquid crystal display device by using a non-linear resistance element such as a TFD (Thin Film Diode) as a switching element. In a liquid crystal display device having a pair of substrates with liquid crystal interposed therebetween, one of the substrates consists of an electrode substrate. On the electrode substrate, there are provided a first group of electrodes, a second group of electrodes crossing the first group of electrodes with an insulating layer interposed therebetween, non-linear resistance elements, one end of each of the non-linear resistance elements being connected to the respective one of the second group of electrodes, and pixel electrodes opposing the first group of electrodes, each pixel electrode being connected to the other end of each of the non-linear resistance elements. Since the non-linear resistance elements have a so-called TFD (MIM) structure made of metal-insulating layer-metal, the manufacturing process is simple. Therefore, it is possible to manufacture the transverse electric field mode display device at low cost.

In a direct current cutoff switch1, a PTC 5, which is a non-linear resistor, is parallel connected to a contact circuit composed of a fixed contact 4-2 and a movable contact 8-2 via electrodes 5-1. When the switch is closed, no current flows in the PTC 5 with a prescribed resistance value at 25° C., since voltage between both the electrodes 5-1 is almost “0”. When the switch is opened in order to cut off current, the contacts form a closed circuit since the PTC 5 is parallel inserted between the fixed contact 4-2 and the movable contact 8-2. For this reason, it is difficult for surge voltage to occur and an arc hardly occurs between both the contacts. The PTC 5 instantaneously heats due to passing current, reduces the resistance value and passes peak current. Then, the resistance value rises and becomes stable in a high value such that weak current which is negligible at 42V, which is rated voltage. Thus, current is substantially cut off.

The invention discloses a detection circuit of a resistance sensing array strengthening the voltage feedback. The detection circuit comprises two-dimensional resistance arrays sharing the same row line and the column line, row multiplexers, column multiplexers, a scanning controller and a feedback circuit. Physical sensitive resistors in the two-dimensional resistance arrays are distributed according to an M*N two-dimensional structure. The scanning controller outputs scanning control signals, and single selections of any resistor to be measured in a row multiplexer array and a column multiplexer array are controlled respectively. A feedback circuit is composed of an operation amplifier and a voltage division circuit. Resistors with specific values are selected and used as a resistor R1 and a resistor R2 in the voltage division circuit. R1:R2=Rr:RS, Rr shows a channel inner resistor of the row multiplexers, and RS shows a sampling resistor. Under the action of the feedback circuit and a corresponding connection manner, the voltages cross two ends of the adjacent columns of resistors in the row where the resistor to be measured is located can be limited to be equal, the interference of measuring on the measured resistor by the adjacent columns of resistors of the resistor to be measured and the inner resistors of the column multiplexer is effectively reduced.

Techniques are presented for dealing with possible source line bias is an error introduced by a non-zero resistance in the ground loop of the read / write circuits of a non-volatile memory. The error is caused by a voltage drop across the resistance of the source path to the chip's ground when current flows. For this purpose, the memory device includes a source potential regulation circuit, including an active circuit element having a first input connected to a reference voltage and having a second input connected as a feedback loop that is connectable to the aggregate node from which the memory cells of a structural block have their current run to ground. A variation includes a non-linear resistive element connectable between the aggregate node and ground.

A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.

An apparatus for breaking a line bidirectional current and a control method therefor. The apparatus comprises a breaking current branch circuit (9) and an on-state current branch circuit (30), wherein the breaking current branch circuit (9) comprises one nonlinear resistor (13) being connected in parallel to one first power semiconductor device (5), or one nonlinear resistor (13) being connected in parallel to at least two first power semiconductor devices (5) mutually connected in series; and the on-state current branch circuit (30) comprises at least one bidirectional power semiconductor switch (12) being connected in series to at least one high-speed isolation switch (11). The apparatus also comprises a bridge-type branch circuit, wherein the bridge-type branch circuit comprises two bridge arms constituted by four identical current commutation branch circuits. The apparatus can break a bidirectional current.

The invention relates to a breaker of a direct current system, in particular to a semi-controlled passive injection current high voltage direct current breaker and a realization method thereof. The breaker comprises a high speed switch-IGBT1 (Insulated Gate Bipolar Translator1) module series branch, a non-linear resistor branch connected in parallel with the branch, and a bridge circuit consisting of power electronic devices, a capacitor, a reactor and a resistor. The breaker can charge an injection current capacitor directly from the running direct current system without an auxiliary circuit; with the adoption of a high speed mechanical switch, the advantage of low loss during normal breakover is kept; bidirectional current can be broken without an arc quickly; the breaker is novel in circuit topological structure, mature in technology, easy to realize, great in current breaking capability and high in withstand voltage level; and the cost is lowered greatly since the power electronic devices are mainly semi-controlled.

The invention discloses a high-voltage DC breaker and a control method thereof. The high-voltage DC breaker comprises an on-state current branch, a breaking current branch, and a bridge branch. The on-state current branch is formed by a mechanical switch and a current transfer module provided with a fully-controlled device and guarantees low-on-state loss in a normal on state. The breaking current branch is formed by a nonlinear resistor and a fully-controlled device series valve group which are connected in parallel. The bridge branch comprises two bridge arms formed by four same commutation modules. Each commutation module is formed by an uncontrolled device series valve group and an inductor which are connected in series. The bridge branch enables the breaking current branch to be capable of breaking bidirectional bidirectional line current and reduces the number of fully-controlled devices and equipment cost.

The invention discloses a single-phase three-winding autotransformer model taking nonlinear influences of excitation impedance into consideration, which belongs to the technical field of transformers. The single-phase three-winding auto-transformer model comprises a basic electric circuit and magnetic circuit equation of a single-phase three-winding step-down autotransformer, an equivalent circuit of a single-phase three-winding autotransformer, an equivalent circuit of a single-phase three-winding step-up autotransformer, an expression of an excitation impedance zm and an expression of the single-phase three-winding autotransformer model taking account of the nonlinear influences of the excitation impedance. The autotransformer model not only takes account of the magnetic coupling between a high-voltage winding and a medium-voltage winding but also takes account of the electrical relationship, and the result of a harmonic characteristic simulation performed by the single-phase three-winding autotransformer model is more actual than that of the harmonic characteristic simulation performed by a common three-winding transformer instead of the three-winding autotransformer. The excitation impedance not only comprises generally non-ignorable nonlinear inductance reflecting iron core saturation characteristics, but also takes account of the nonlinear resistance reflecting iron losses, and the harmonic characteristic of a transformer can be analyzed more accurately by using the excitation impedance.

The present invention teaches an overvoltage protection device that includes at least one non-linear resistance element and a single cut-off device coupled with the at least one non-linear resistance element to disable the at least one non-linear resistance element when the at least one non-linear resistance element reaches a pre-determined temperature. The single cut-off device may include stranded wire, a first solder having a first melting point connecting the stranded wire to the at least one non-linear resistance element, and a second solder having a second melting point, higher than the first melting point, connecting the stranded wire to the at least one non-linear resistance element. The single cut-off device may further include a shifting part that shifts when the at least one non-linear resistance element heats the first solder to the first melting point. In other particular embodiments, the overvoltage protection device may further include a status indicator configured to be moved by the single cut-off device to indicate one of at least two conditions of the at least one non-linear resistance element. The status indicator may include a lever, and the single cut-off device moves the lever to indicate the one of at least two conditions of the at least one non-linear resistance element.

A memristor-based emulator including a memristor circuit for use in digital modulation that includes a first current feedback operational amplifier (CFOA) having multiple terminals in communication with a capacitor Cd and in further communication with a resistor Ri. A second CFOA having multiple terminals is in communication with the first CFOA and is adapted to be in further communication with a voltage vM to provide an input current iM for integration by a capacitor Ci. A nonlinear resistor is in communication with the second CFOA. A third CFOA having multiple terminals is in communication with the nonlinear resistor and is in further communication with the first CFOA and a resistor Rd. The third CFOA and the resistor Rd act as an inverting amplifier associated with the nonlinear resistor to increase a current gain to increase a difference between ON and OFF values of a resistance of a realized memristor.

The invention relates to the field of manufacturing high voltage metal oxide surge arresters and discloses a formula of a non-linear resistor for a high voltage surge arrester and a manufacturing method thereof, which are applicable to the metal oxide surge arresters for protecting high voltage power devices, in particular to the metal oxide surge arresters of ultra-high voltage AC power transmission and transformation systems of 750kV and 1000kV. The formula comprises additives consisting of the following components by weight percent: 3.1-4.8% of bismuth oxide, 2.5-4.6% of antimony oxide, 1.2-2.6% of cobalt oxide, 0.7-1.5% of silicon oxide, 0.5-0.9% of manganese oxide, 0.7-1.3% of chromium oxide, 0.3-0.9% of nickel oxide, 0.04-0.13% of boron glass powder and 0.01-0.06% of aluminum oxide. The balance is a main component-zinc oxide.

The invention discloses an active voltage arc-extinction method applicable to a single-phase earth fault of a medium voltage distribution network, and relates to the technical field of fault self-recovery of a medium voltage distribution network. The active voltage arc-extinction includes the following steps: a. continuously measuring bus three-phase voltage, zero sequence voltage and each outlet three-phase current, and when a single-phase earth fault is detected, conducting fault phase selection; b. designating a threshold Ires.g of a fault phase current magnitude and a threshold Ures.g of a fault phase voltage magnitude of a fault feeder; c. measuring the voltage and current of the fault phase, comparing the fault phase current magnitude of the fault feeder with Ires.g. According to the invention, the method can effectively increase the arc extinction of a low-resistance earth fault, and compensate current at a fault point as much as possible while excess voltage is effectively controlled, and ensures that arc at the fault point can be reliably extinct. According to the invention, for non-linear resistance earth, the method is also effective simply by changing program codes in current active compensating apparatuses, and has higher values when applied to engineering.

A voltage regulator includes an amplifier, a first buffer and a second buffer. The amplifier is designed to generate an error voltage between a reference voltage and a voltage at an output node of the voltage regulator. The first buffer is coupled to receive the amplified error voltage and, in response, to drive a first pass transistor. The first buffer includes a non-linear resistance element. The resistance of the non-linear resistance element varies non-linearly with a load current drawn from the output node. The second buffer is coupled to receive the amplified error voltage, and in response, to drive a second pass transistor. The second buffer includes a linear resistance element. The resistance of the linear element is a constant. The use of the non-linear resistance element enables reduction in power consumption in the voltage regulator.

Techniques are presented for dealing with possible source line bias is an error introduced by a non-zero resistance in the ground loop of the read / write circuits of a non-volatile memory. The error is caused by a voltage drop across the resistance of the source path to the chip's ground when current flows. For this purpose, the memory device includes a source potential regulation circuit, including an active circuit element having a first input connected to a reference voltage and having a second input connected as a feedback loop that is connectable to the aggregate node from which the memory cells of a structural block have their current run to ground. A variation includes a non-linear resistive element connectable between the aggregate node and ground.

The invention discloses a high-voltage direct-current gas breaker based on a self-excited oscillation circuit. By the gas breaker, fault current can be cut off under high nominal voltage classes. The gas breaker comprises a superconducting current limiter and a cut-off module which are in serial connection. The cut-off module comprises gas breaker bodies in parallel connection, a current conversion circuit formed by serial connection of a capacitor and an inductance, and a non-linear resistor oxidation energy absorbing device. The fault current passes the superconducting current limiter first, is limited by the same, and is cut off by the gas breaker bodies. The gas breakers extinguish arc by using self exciting to generate artificial zero crossing points. The high-voltage direct-current gas breaker is fast in response, low in current overload coefficient, simple in structure, low in size, low in overvoltage, safe and reliable, short-circuit current does not exceed current quench of the superconducting current limiter, and other devices can be protected.

In a direct current cutoff switch1, a PTC 5, which is a non-linear resistor, is parallel connected to a contact circuit composed of a fixed contact 4-2 and a movable contact 8-2 via electrodes 5-1. When the switch is closed, no current flows in the PTC 5 with a prescribed resistance value at 25° C., since voltage between both the electrodes 5-1 is almost “0”. When the switch is opened in order to cut off current, the contacts form a closed circuit since the PTC 5 is parallel inserted between the fixed contact 4-2 and the movable contact 8-2. For this reason, it is difficult for surge voltage to occur and an arc hardly occurs between both the contacts. The PTC 5 instantaneously heats due to passing current, reduces the resistance value and passes peak current. Then, the resistance value rises and becomes stable in a high value such that weak current which is negligible at 42V, which is rated voltage. Thus, current is substantially cut off.

The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non-linear resistance interfaces to relatively reduce the total number of non-linear resistance interfaces between two electrodes and, as a result, decrease the breakdown voltage of the components.

A voltage control system that provides an output voltage of constant value to a load. The control system includes voltage supply means for providing the output voltage to the load. A feedback circuit supplies a feedback current. A summing circuit algebraically sums the feedback current and a reference current to provide an error signal that changes as the feedback current changes. These changes affect the amplitude of the output voltage delivered to the load. The error signal is processed by a voltage adjustment means including an error amplifier that amplifies the error signal for use in making an adjustment to the output voltage so as to maintain its constant value. A gain increasing means responds to transient changes in output voltage to momentarily increase the error amplifier gain to shorten system recovery time to constant output voltage.

The systems and methods described herein provide for composite transistor circuit having a bipolar transistor and a compensation unit. The compensation unit can be configured to stabilize the DC biasing point of the bipolar transistor. The compensation unit can compensate for the self-heating effect in the bipolar transistor and / or improve the linear performance of the bipolar transistor. The compensation unit can include a nonlinear resistor in series with a switch and can be configured to increase the base current into the bipolar transistor as the output voltage of the circuit increases.

The present invention discloses a laminated chip electronic device and a method of manufacturing the same. In the laminated chip electronic device and the method of manufacturing the same according to the present invention, a body is made of a non-linear resistance coefficient material and has a plurality of conductive layers formed therein; an insulating layer is formed on the top, bottom, front and back surfaces of the body; and two electrodes are formed at the two ends of the body and electrically connected to the terminals of the conductive layers, respectively. Furthermore, in the present invention, two soldered interface layers are formed on the two electrodes, respectively.

The method is applicable to conventional sound-frequency measuring meter. Feeding-in an adjustable DC current shifts the voice coil a certain displacement from equilibrium position. Under different displacements of the coil, using conventional sound-frequency measuring meter measures characteristic of electrical impedance of speaker unit. Based on model of nonlinear electrical impedance, using technique of system identification obtains nonlinear parameters of speaker unit. The said measurement of nonlinear parameter is related to measuring non-linear force factor, non-linear equivalent force and non-linear inductance of voice coil. Using conventional sound-frequency measuring meter, the invention can measure curve of electrical impedance of speaker unit, and caries out system identification for measured impedance curve of speaker unit.

Disclosed is a direct current (DC) circuit breaker including a first line in which a first high-speed switch and a power semiconductor switch are connected in series; a second line in which a plurality of second high-speed switches, a plurality of pairs of a first non-linear resistor and a power fuse connected in parallel, and a resistor are connected in series; and a third line including a second non-linear resistor. The first line, the second line, and the third line are connected in parallel.

The invention relates to a memristor-based Duffing-van der Pol oscillating circuit which comprises an excitation power supply e(t), a resistor R, a first capacitor C1, a second capacitor C2 and a memristor M, wherein one end of the excitation power supply e(t) is connected with one end of the resistor R, the other end of the resistor R is respectively connected with one end of the first capacitor C1 and one end of the second capacitor C2, the other end of the second capacitor C2 is connected with one end of the memristor M, and the other ends of the memristor M and the first capacitor C1 are both connected with the other end of the excitation power supply e(t). The oscillating circuit is a second-order oscillating circuit, adopts continuous nonlinear resistors and has the advantages that the circuit structure is simple, parameters are convenient to adjust, and dynamic characteristics of a Duffing-van der Pol oscillator can be completely reserved.

The present invention teaches an overvoltage protection device that includes at least one non-linear resistance element and a single cut-off device coupled with the at least one non-linear resistance element to disable the at least one non-linear resistance element when the at least one non-linear resistance element reaches a pre-determined temperature. The single cut-off device may include stranded wire, a first solder having a first melting point connecting the stranded wire to the at least one non-linear resistance element, and a second solder having a second melting point, higher than the first melting point, connecting the stranded wire to the at least one non-linear resistance element. The single cut-off device may further include a shifting part that shifts when the at least one non-linear resistance element heats the first solder to the first melting point. In other particular embodiments, the overvoltage protection device may further include a status indicator configured to be moved by the single cut-off device to indicate one of at least two conditions of the at least one non-linear resistance element. The status indicator may include a lever, and the single cut-off device moves the lever to indicate the one of at least two conditions of the at least one non-linear resistance element.

A direct current switch-off device comprises an on-state current branch circuit and a current commutating and breaking unit which are connected in parallel. The on-state current branch circuit has a mechanical switch (S) and a current transfer module which are connected in series. The current commutating and breaking unit comprises a bridge-type branch circuit and a current-breaking branch circuit. The current-breaking branch circuit and two bridge arms of the bridge-type branch circuit are connected in parallel. The current-breaking branch circuit comprises a nonlinear resistor (RI) and a valve group consisting of fully-controlled devices connected in series. The nonlinear resistor (RI) and the valve group are connected in parallel. Two ends of each fully-controlled device in the valve group are connected in parallel with a buffering and reclosing circuit.