390 results about "Nonlinear resistor" patented technology

A floating gate MOS transistor comprises one or more control gates, an active channel, and at least one floating gate disposed between the control gate(s) and the active channel. First and second non-linear resistances couple the floating gate to first and second control voltage sources respectively, the non-linear resistances forming a voltage divider network which sets the operating voltage of the floating gate.

To simplify a manufacturing process of a transverse electric field mode liquid crystal display device by using a non-linear resistance element such as a TFD (Thin Film Diode) as a switching element. In a liquid crystal display device having a pair of substrates with liquid crystal interposed therebetween, one of the substrates consists of an electrode substrate. On the electrode substrate, there are provided a first group of electrodes, a second group of electrodes crossing the first group of electrodes with an insulating layer interposed therebetween, non-linear resistance elements, one end of each of the non-linear resistance elements being connected to the respective one of the second group of electrodes, and pixel electrodes opposing the first group of electrodes, each pixel electrode being connected to the other end of each of the non-linear resistance elements. Since the non-linear resistance elements have a so-called TFD (MIM) structure made of metal-insulating layer-metal, the manufacturing process is simple. Therefore, it is possible to manufacture the transverse electric field mode display device at low cost.

The invention discloses a detection circuit of a resistance sensing array strengthening the voltage feedback. The detection circuit comprises two-dimensional resistance arrays sharing the same row line and the column line, row multiplexers, column multiplexers, a scanning controller and a feedback circuit. Physical sensitive resistors in the two-dimensional resistance arrays are distributed according to an M*N two-dimensional structure. The scanning controller outputs scanning control signals, and single selections of any resistor to be measured in a row multiplexer array and a column multiplexer array are controlled respectively. A feedback circuit is composed of an operation amplifier and a voltage division circuit. Resistors with specific values are selected and used as a resistor R1 and a resistor R2 in the voltage division circuit. R1:R2=Rr:RS, Rr shows a channel inner resistor of the row multiplexers, and RS shows a sampling resistor. Under the action of the feedback circuit and a corresponding connection manner, the voltages cross two ends of the adjacent columns of resistors in the row where the resistor to be measured is located can be limited to be equal, the interference of measuring on the measured resistor by the adjacent columns of resistors of the resistor to be measured and the inner resistors of the column multiplexer is effectively reduced.

Techniques are presented for dealing with possible source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits of a non-volatile memory. The error is caused by a voltage drop across the resistance of the source path to the chip's ground when current flows. For this purpose, the memory device includes a source potential regulation circuit, including an active circuit element having a first input connected to a reference voltage and having a second input connected as a feedback loop that is connectable to the aggregate node from which the memory cells of a structural block have their current run to ground. A variation includes a non-linear resistive element connectable between the aggregate node and ground.

An apparatus for breaking a line bidirectional current and a control method therefor. The apparatus comprises a breaking current branch circuit (9) and an on-state current branch circuit (30), wherein the breaking current branch circuit (9) comprises one nonlinear resistor (13) being connected in parallel to one first power semiconductor device (5), or one nonlinear resistor (13) being connected in parallel to at least two first power semiconductor devices (5) mutually connected in series; and the on-state current branch circuit (30) comprises at least one bidirectional power semiconductor switch (12) being connected in series to at least one high-speed isolation switch (11). The apparatus also comprises a bridge-type branch circuit, wherein the bridge-type branch circuit comprises two bridge arms constituted by four identical current commutation branch circuits. The apparatus can break a bidirectional current.

The invention relates to a breaker of a direct current system, in particular to a semi-controlled passive injection current high voltage direct current breaker and a realization method thereof. The breaker comprises a high speed switch-IGBT1 (Insulated Gate Bipolar Translator1) module series branch, a non-linear resistor branch connected in parallel with the branch, and a bridge circuit consisting of power electronic devices, a capacitor, a reactor and a resistor. The breaker can charge an injection current capacitor directly from the running direct current system without an auxiliary circuit; with the adoption of a high speed mechanical switch, the advantage of low loss during normal breakover is kept; bidirectional current can be broken without an arc quickly; the breaker is novel in circuit topological structure, mature in technology, easy to realize, great in current breaking capability and high in withstand voltage level; and the cost is lowered greatly since the power electronic devices are mainly semi-controlled.

The invention discloses a high-voltage DC breaker and a control method thereof. The high-voltage DC breaker comprises an on-state current branch, a breaking current branch, and a bridge branch. The on-state current branch is formed by a mechanical switch and a current transfer module provided with a fully-controlled device and guarantees low-on-state loss in a normal on state. The breaking current branch is formed by a nonlinear resistor and a fully-controlled device series valve group which are connected in parallel. The bridge branch comprises two bridge arms formed by four same commutation modules. Each commutation module is formed by an uncontrolled device series valve group and an inductor which are connected in series. The bridge branch enables the breaking current branch to be capable of breaking bidirectional bidirectional line current and reduces the number of fully-controlled devices and equipment cost.

The invention discloses a single-phase three-winding autotransformer model taking nonlinear influences of excitation impedance into consideration, which belongs to the technical field of transformers. The single-phase three-winding auto-transformer model comprises a basic electric circuit and magnetic circuit equation of a single-phase three-winding step-down autotransformer, an equivalent circuit of a single-phase three-winding autotransformer, an equivalent circuit of a single-phase three-winding step-up autotransformer, an expression of an excitation impedance zm and an expression of the single-phase three-winding autotransformer model taking account of the nonlinear influences of the excitation impedance. The autotransformer model not only takes account of the magnetic coupling between a high-voltage winding and a medium-voltage winding but also takes account of the electrical relationship, and the result of a harmonic characteristic simulation performed by the single-phase three-winding autotransformer model is more actual than that of the harmonic characteristic simulation performed by a common three-winding transformer instead of the three-winding autotransformer. The excitation impedance not only comprises generally non-ignorable nonlinear inductance reflecting iron core saturation characteristics, but also takes account of the nonlinear resistance reflecting iron losses, and the harmonic characteristic of a transformer can be analyzed more accurately by using the excitation impedance.

A memristor-based emulator including a memristor circuit for use in digital modulation that includes a first current feedback operational amplifier (CFOA) having multiple terminals in communication with a capacitor C_d and in further communication with a resistor R_i. A second CFOA having multiple terminals is in communication with the first CFOA and is adapted to be in further communication with a voltage v_M to provide an input current i_M for integration by a capacitor C_i. A nonlinear resistor is in communication with the second CFOA. A third CFOA having multiple terminals is in communication with the nonlinear resistor and is in further communication with the first CFOA and a resistor R_d. The third CFOA and the resistor R_d act as an inverting amplifier associated with the nonlinear resistor to increase a current gain to increase a difference between ON and OFF values of a resistance of a realized memristor.

The invention relates to the field of manufacturing high voltage metal oxide surge arresters and discloses a formula of a non-linear resistor for a high voltage surge arrester and a manufacturing method thereof, which are applicable to the metal oxide surge arresters for protecting high voltage power devices, in particular to the metal oxide surge arresters of ultra-high voltage AC power transmission and transformation systems of 750kV and 1000kV. The formula comprises additives consisting of the following components by weight percent: 3.1-4.8% of bismuth oxide, 2.5-4.6% of antimony oxide, 1.2-2.6% of cobalt oxide, 0.7-1.5% of silicon oxide, 0.5-0.9% of manganese oxide, 0.7-1.3% of chromium oxide, 0.3-0.9% of nickel oxide, 0.04-0.13% of boron glass powder and 0.01-0.06% of aluminum oxide. The balance is a main component-zinc oxide.

A voltage regulator includes an amplifier, a first buffer and a second buffer. The amplifier is designed to generate an error voltage between a reference voltage and a voltage at an output node of the voltage regulator. The first buffer is coupled to receive the amplified error voltage and, in response, to drive a first pass transistor. The first buffer includes a non-linear resistance element. The resistance of the non-linear resistance element varies non-linearly with a load current drawn from the output node. The second buffer is coupled to receive the amplified error voltage, and in response, to drive a second pass transistor. The second buffer includes a linear resistance element. The resistance of the linear element is a constant. The use of the non-linear resistance element enables reduction in power consumption in the voltage regulator.

The present invention discloses a laminated chip electronic device and a method of manufacturing the same. In the laminated chip electronic device and the method of manufacturing the same according to the present invention, a body is made of a non-linear resistance coefficient material and has a plurality of conductive layers formed therein; an insulating layer is formed on the top, bottom, front and back surfaces of the body; and two electrodes are formed at the two ends of the body and electrically connected to the terminals of the conductive layers, respectively. Furthermore, in the present invention, two soldered interface layers are formed on the two electrodes, respectively.

The method is applicable to conventional sound-frequency measuring meter. Feeding-in an adjustable DC current shifts the voice coil a certain displacement from equilibrium position. Under different displacements of the coil, using conventional sound-frequency measuring meter measures characteristic of electrical impedance of speaker unit. Based on model of nonlinear electrical impedance, using technique of system identification obtains nonlinear parameters of speaker unit. The said measurement of nonlinear parameter is related to measuring non-linear force factor, non-linear equivalent force and non-linear inductance of voice coil. Using conventional sound-frequency measuring meter, the invention can measure curve of electrical impedance of speaker unit, and caries out system identification for measured impedance curve of speaker unit.

Disclosed is a direct current (DC) circuit breaker including a first line in which a first high-speed switch and a power semiconductor switch are connected in series; a second line in which a plurality of second high-speed switches, a plurality of pairs of a first non-linear resistor and a power fuse connected in parallel, and a resistor are connected in series; and a third line including a second non-linear resistor. The first line, the second line, and the third line are connected in parallel.

The present invention teaches an overvoltage protection device that includes at least one non-linear resistance element and a single cut-off device coupled with the at least one non-linear resistance element to disable the at least one non-linear resistance element when the at least one non-linear resistance element reaches a pre-determined temperature. The single cut-off device may include stranded wire, a first solder having a first melting point connecting the stranded wire to the at least one non-linear resistance element, and a second solder having a second melting point, higher than the first melting point, connecting the stranded wire to the at least one non-linear resistance element. The single cut-off device may further include a shifting part that shifts when the at least one non-linear resistance element heats the first solder to the first melting point. In other particular embodiments, the overvoltage protection device may further include a status indicator configured to be moved by the single cut-off device to indicate one of at least two conditions of the at least one non-linear resistance element. The status indicator may include a lever, and the single cut-off device moves the lever to indicate the one of at least two conditions of the at least one non-linear resistance element.

A breaker failure detection device for a direct current (DC) circuit breaker (200) is provided. The circuit breaker comprises a circuit breaking element (204) and a non-linear resistor, e.g., a surge arrester (205), connected in parallel. The breaker failure detection device comprises a current sensor (212, 213, 214, 215), for measuring a current commutating from the circuit breaking element (204), and a breaker failure detection unit (211). The breaker failure detection unit (211) is arranged for comparing the measured current to desired values and deciding that an internal commutation process of the circuit breaker (200) does not proceed as desired if the measured current deviates from the desired values. The present invention makes use of an understanding that an improved detection of breaker failures may be achieved by monitoring the internal commutation process of the circuit breaker. Further, a method of breaker failure detection is provided.