Detection circuit of resistance sensing array strengthening voltage feedback

Abstract

The invention discloses a detection circuit of a resistance sensing array strengthening the voltage feedback. The detection circuit comprises two-dimensional resistance arrays sharing the same row line and the column line, row multiplexers, column multiplexers, a scanning controller and a feedback circuit. Physical sensitive resistors in the two-dimensional resistance arrays are distributed according to an M*N two-dimensional structure. The scanning controller outputs scanning control signals, and single selections of any resistor to be measured in a row multiplexer array and a column multiplexer array are controlled respectively. A feedback circuit is composed of an operation amplifier and a voltage division circuit. Resistors with specific values are selected and used as a resistor R1 and a resistor R2 in the voltage division circuit. R1:R2=Rr:RS, Rr shows a channel inner resistor of the row multiplexers, and RS shows a sampling resistor. Under the action of the feedback circuit and a corresponding connection manner, the voltages cross two ends of the adjacent columns of resistors in the row where the resistor to be measured is located can be limited to be equal, the interference of measuring on the measured resistor by the adjacent columns of resistors of the resistor to be measured and the inner resistors of the column multiplexer is effectively reduced.

Description

technical field [0001] The invention relates to a voltage feedback isolation circuit based on a resistive sensing array, belonging to the technical field of circuits. The circuit can quickly detect faulty or changed devices, and can effectively isolate the influence of the adjacent column resistance of the device to be tested and the internal resistance of the column multiplexer on the detection result, so that the measurement error is greatly reduced. Background technique [0002] The array sensing device is to combine multiple sensing elements with the same performance according to the structure of a two-dimensional array. It can change or generate corresponding shapes and characteristics by sensing changes in parameters focused on the array. This feature is widely used in biosensing, temperature tactile and thermal imaging based on infrared sensors, etc. [0003] Resistive sensing arrays are widely used in infrared imaging simulation systems, force tactile sensing and te...

AI Technical Summary

Problems solved by technology

Verification using a 16×16 array network bolometer array, using only 32 pins, has confirmed that the model can effectively resolve device damage or small changes in device value, but it is not suitable for other parameters in the row and column of the device under test. The crosstalk of components does not play a good role in isolation

In 2009, Y.J.Yang et al. proposed a 32×32 array of temperature and tactile sensing arrays for the artificial skin of the robotic arm. A multiplexer was added to the array network, and the speed of row selection and column selection was greatly accelerated. The maximum detection The rate is as high as 3,000 pixels per second, but in order to ensure the detection accuracy and shield the interference of non-tested resistors in the array, the circuit introduces an operational amplifier circuit in each column of the array. The circuit is complex, and the small difference in the performance of multiple operational amplifiers Also leads to poor consistency of measurement results across multiple channels

[0006] Based on the relevant patents of resistive array detection, there are no relevant patents in China at present, and most of the patents related to resistive arrays are related to the preparation of arrays. Patent CN201110148963.2 discloses an array-type temperature tactile sensing device. The resistance sensing array realizes temperature tactile sensing, and its feedback drives the isolation circuit to transfer the voltage of the row where the resistance to be measured is located to the terminal voltage V after the row selector. SG Feedback to non-selected row lines and column lines, although it can play a certain role in isolation, but its feedback voltage V SG It is located outside the row selector and column selector. Since the internal resistance in the multiplexer has a voltage dividing effect, the voltages at both ends of the adjacent resistors on the row line and column line where the resistor to be measured are located are not equal, and there is current in the resistor. Passing will interfere with the measurement results, so the feedback-driven isolation circuit in the array is more inclined to how to select the resistance to be measured from the array individually, and does not realize the row line and column line where the resistance to be measured is located in a real sense. The isolation of adjacent resistors

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