124results about How to "Suppress surge voltage" patented technology

A PDP driving circuit is comprised of a power recovery unit for recovering an electric power from a capacitive load by resonance operation with PDP which is the capacitive load Cp, and reusing the recovered power. The power recovery unit includes a recovery inductor for resonating with the capacitive load, a recovery switch element for connecting the recovery capacitor to the capacitive load and recovery inductor, and forming a channel for passing resonance current, a counterflow preventive diode for blocking flow of current in the recovery switch element in reverse polarity direction, and a protective diode for forming a closed current channel including the recovery inductor and recovery switch element when the counterflow preventive diode is changed from ON state to OFF state.

Aspects of the invention are directed to a three-level power converter that has, as one phase, a bidirectional switching element connected to the series connection point of a series circuit of a first insulated gate bi-polar transistor (“IGBT”) and second IGBT and an intermediate electrode of a direct current power supply. Also included is a fuse connected between the bidirectional switching element and the intermediate electrode of the direct current power supply, and an overcurrent shutdown unit provided in each gate drive circuit of the first and second IGBTs, are provided as protection from a power supply short circuit phenomenon occurring in the event of a short circuit failure of any of the IGBTs or diodes.

The present invention includes: a main voltage detection unit for detecting a voltage applied between main electrodes of an electrical power switching element; a control current source for injecting a current into a gate electrode of the electrical power switching element in accordance with the voltage detected by the main voltage detection unit; a main current detection unit for detecting a main current flowing between the main electrodes of the electrical power switching element; and an adjustment unit for adjusting a current of the control power source in accordance with the main current detected by the main current detection unit.

A gate drive circuit includes a driver for driving a gate of a switching element, a peak voltage detector, and a drive capacity calculator. The peak voltage detector detects a peak voltage at a main terminal of the switching element when the switching element is OFF. The drive capacity calculator calculates a voltage difference value between the detected peak voltage and an allowable voltage value at the main terminal of the switching element, where the allowable voltage is based on the specifications of the switching element. The drive capacity calculator changes a drive capacity of the driver to gradually decrease the difference between the detected peak voltage and the allowable voltage.

A switchgear control apparatus includes a zero point interval detecting circuit, an interruption time judgment circuit and a reclosing time decision circuit. The zero point interval detecting circuit detects time intervals between successive zero points of a main circuit current. The interruption time judgment circuit judges that interruption time of the main circuit current is time of a zero point immediately preceding a zero point at which a difference between the time interval between two successive zero points and half the period of a commercial AC voltage exceeds a specific value. Upon detecting the gradient of the main circuit current at the interruption time, the reclosing time decision circuit sets reclosing time at a point in phase where the AC voltage has a maximum negative value if the gradient is positive, and at a point in phase where the AC voltage has a maximum positive value if the gradient is negative.

The present invention relates to a drive control apparatus for an electric motor and a control method thereof. In the present invention, the generation of electric brake is suppressed while protecting a semiconductor relay from excessive surge voltage. The drive control apparatus is configured to include: a drive circuit for controlling the drive of the electric motor; a semiconductor relay arranged on a drive line between the drive circuit and the electric motor to cut off current supply from the drive circuit to the electric motor; and an active clamp circuit for turning on the semiconductor relay when a potential difference between the drive circuit side and the electric motor side of the semiconductor relay is greater than or equal to a predetermined value.

A transformer that realizes ZVS operation includes a primary winding and a secondary winding. A control circuit turns switching elements on and off in a complimentary manner in order to repeatedly invert the voltage applied to the primary winding. A conduction path supplies a voltage excited in the secondary winding to a load connected between a high-potential side and a ground side of the secondary winding. A first rectifier diode has a rectification direction extending from the high-potential side toward the ground side of the load and is provided along the conduction path. A second rectifier diode and a capacitor, which are connected in series with each other, are connected in parallel with the secondary winding. An inductor is connected in parallel with the second rectifier diode. A rectification direction of the second rectifier diode matches the direction extending from the high-potential side to the ground side.

A gate driver includes: a gate drive unit configured to drive a gate of a switching element in accordance with an input signal that commands to turn on or to turn off the switching element; a timing determination unit configured to measure an on-time width from when the input signal is switched to an on-command to when the input signal is switched to an off-command, and configured to determine, based on the measured on-time width, an intermediate timing that is before switch-off surge voltage of the switching element reaches a peak; and a driving condition changing unit configured to change a gate driving condition of the switching element at the intermediate timing determined by the timing determination unit.

For enhancing performance of the electrostatic discharge protection for a semiconductor IC (integrated circuit), the electrostatic discharge protection circuit includes: a power source system for supplying a current to a semiconductor IC in the semiconductor device through a power source potential line and a reference potential line; a primary protection circuit for releasing a surge current to the power source system through a first node connected to a signal terminal when the surge current is generated at the signal terminal; a trigger circuit for generating a trigger signal in response to a surge voltage generated at the power source system; and a secondary protection circuit. The secondary protection circuit releases the surge current to the power source system through a second node connected between the first node and the semiconductor IC in response to the trigger signal, so that the surge voltage can be rapidly suppressed near the semiconductor IC.

An F connector coupled to a transmission line applies a radio frequency (RF) signal to an RF input of a filter of a set-top box via an impedance matching network that includes a first inductor and a second inductor that are coupled in series. A capacitor and a third inductor are coupled in parallel between a discharge tube and a junction terminal that is interposed between the series coupled inductors for protecting electronic components such as the filter from a voltage surge developed in the transmission line.

A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.

According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.

A gate driver for driving a gate of a switching element in accordance with an input signal is provided. The gate driver is configured to change a gate driving condition in accordance with a detected value of power supply voltage. Each time when the switching element is turned off, the gate driver stores a time width from a time when the input signal is switched to an off command to a time when switch-off surge occurs in the switching device. If it is determined that the gate driving condition should be changed during turn-off operation of the switching element, the gate driver switches the gate driving condition when a time corresponding to the time width stored at a previous turn-off is elapsed after a current turn-off of the switching element is started.