The invention belongs to the field of
power electronics, and discloses an active clamping circuit and method for inhibiting
crosstalk of a
silicon carbide MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor), symmetrical dual active clamping driving sub-circuits are adopted, and each sub-circuit responds to a driving
signal through a control tube and dynamically manages the on-off state of a clamping tube. When the first
silicon carbide MOSFET is conducted to cause
crosstalk, the control tube on the turn-off side is
cut off to enable the clamping tube to be conducted, the gate-source
voltage of the second
silicon carbide MOSFET is clamped to
negative voltage, and forward misconduction and negative breakdown are avoided; during the turn-off period of the double tubes,
displacement current is discharged by a low-impedance path of the clamping tube; when the second
silicon carbide MOSFET is conducted, the control tube is turned on to turn off the clamping tube, and the
voltage clamping is relieved. The circuit overcomes the defects that gate pole resistance affects the switching speed, passive clamping lacks dynamic response and external
signal delay exists, and the switching speed, the
system reliability and the control cost are considered while
crosstalk peaks are restrained; not only is the high-frequency switching
advantage of the
silicon carbide MOSFET maintained, but also the safety of the grid
electrode is protected through accurate
voltage clamping.