49 results about "Double gate" patented technology

A semiconductor device with a dual-gate structure, a method for manufacturing the same, and an electronic device including such a semiconductor device are disclosed. According to an embodiment, the semiconductor device may include: a vertical channel portion on a substrate; source / drain portions located at the upper and lower ends of the channel portion relative to the substrate; a first gate stack on a first side of the channel portion in a first direction laterally relative to the substrate; and a second gate stack on a second side of the channel portion opposite to the first side in the first direction. The distance between at least one edge of the upper and lower edges of the first gate stack near the channel portion in the vertical direction and the corresponding source / drain portion may be less than the distance between at least one edge of the upper and lower edges of the second gate stack near the channel portion in the vertical direction corresponding to the aforementioned at least one edge and the corresponding source / drain portion.

The invention provides a display panel and a display device. The display panel gate drive circuit comprises a signal generation module and an output module which are electrically connected, the signal generation module comprises at least one first-type signal transistor, the output module comprises at least one output transistor, and the first-type signal transistor and the output transistor are both P-type transistors. A shading layer of the display panel comprises a first signal bottom grid electrode of a first type signal transistor and an output bottom grid electrode of an output transistor. According to the invention, the proportion of the number of the output transistors with the output bottom gates in the output module is greater than or equal to the proportion of the number of the first-type signal transistors with the first signal bottom gates in the signal generation module, so that the proportion of double gates of the P-type transistors in the signal generation module is reduced; equivalently, the area of the bottom grid electrode in the grid electrode driving circuit is reduced, so that the water vapor invasion area in the light shielding layer is reduced, and the technical problem that the light shielding metal layer of the display panel is corroded is solved.

The application discloses a boosting ignition circuit and belongs to the technical field of fuzes. The boosting ignition circuit comprises a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boosting circuit and an ignition control circuit. The boosting ignition circuit solves the technical problem of high reliability of fuze ignition. The boosting ignition circuit is stable and reliable, and double gate control guarantees safety. The boosting ignition circuit can be applied in applications with small ignition current demand.

A double-brake tempering ring for automatic weld joint treatment relates to the technical field of weld joint treatment and comprises a clamping part, a tempering ring adjusting part, a conveying part and a drill rod. The clamping part, the tempering ring adjusting part and the conveying part are fixedly installed on the ground, and a controller is fixedly installed on the clamping part. A signal processor in the controller is used for receiving a signal, and a central processing unit in the controller is used for controlling electric elements of the equipment to operate orderly; the drill rod is inserted into the clamping part, the tempering ring adjusting part and the conveying part; the equipment can be used for clamping drill rods with different sizes, so that the cost of purchasing drill rods with different sizes is reduced; meanwhile, a traditional single-brake tempering ring is improved, a double-brake tempering ring is additionally arranged, the power consumption is saved, the welding seam performance and other aspects are obviously improved compared with a single-brake tempering mode, and the double effects of reducing cost and improving quality are achieved.

The invention discloses a thin film transistor with a vertical double-gate structure and a manufacturing method thereof, and relates to the technical field of display screens. Comprising a glass substrate, a first oxide layer arranged on the glass substrate, a grid electrode arranged on the first oxide layer, a grid electrode insulating layer arranged on the first oxide layer and covering the grid electrode, an active layer arranged on the grid electrode insulating layer, a first metal layer arranged on the active layer, and an ohm contact layer arranged on the active layer and covering the first metal layer, the oxide semiconductor structure is arranged on the first metal layer, the second metal layer is arranged on the first metal layer, and the third metal layer is arranged on the packaging layer; according to the thin film transistor with the vertical dual-gate structure and the manufacturing method of the thin film transistor, the problems that high mobility and low leakage current of an existing thin film transistor are difficult to consider at the same time, and the layout area of a traditional structure is large are solved.

The invention discloses a display panel and a display device. A first data line is arranged in the display panel and connected with a first pixel circuit in a first sub-pixel and a second pixel circuit in a second sub-pixel, meanwhile, a first sub-scanning line and a second sub-scanning line are further arranged, the first sub-scanning line is connected with the first pixel circuit in the first sub-pixel, and the second sub-scanning line is connected with the second pixel circuit in the second sub-pixel. The second sub-scanning line is connected with a second pixel circuit in the second sub-pixel, and when one of the first power supply signal line and the initialization signal line is set to extend along the second direction like the first data line, at least one signal line has different line widths in different areas in the second direction. According to the invention, the space in the row direction can be saved by utilizing a double-grid line driving technology, and meanwhile, based on the requirements of actual space layout and the like, the line width of at least part of signal lines extending in the column direction is adaptively increased, the adaptive line width and the line width differentiation design adaptive to space distribution are obtained, line breakage is avoided, and poor display of the panel is prevented.

A method for manufacturing a split double gate transistor includes: forming a first fin on a substrate; removing sacrificial layers from a portion of the first fin; sequentially forming a first gate insulating layer, a channel layer and a protection layer on exposed portions of each gate metal layer; performing a patterning process to form a second fin; patterning the second fin to form a plurality of first recesses and a plurality of second recesses; forming a plurality of inner spacer layers; forming a first gate component, a drain component and a source component; removing the protection layer; and sequentially forming a second gate insulating layer, a plurality of gate connectors, and a second gate component.

The utility model relates to the technical field of electric isolation gate valves, and discloses a large-caliber low-pressure bypass inlet electric isolation gate valve which comprises a valve body, a valve seat is arranged in the middle of the valve body, linings are arranged on the inner side walls of the two ends of the valve body, a valve deck is installed at the upper end of the valve body, and a valve cover is installed at the lower end of the valve deck. An electric head with a hand wheel is arranged at the top of the valve deck, the left end of the valve body is connected with an automatic cleaning filter, a left gate plate is arranged in the valve seat, a valve element is arranged on the right side of the left gate plate, and a right gate plate is arranged on the right side of the valve element. The left gate plate and the right gate plate are arranged, the wedge type double-gate-plate structure is adopted, and the wedge type double-gate-plate structure can solve the problems that in actual working conditions, a wedge type single-gate-plate structure is prone to generating, if the valve body is subjected to accidental pressure or torque, the valve body is likely to be twisted, and the gate plates cannot be normally opened; however, the double-gate structure can still be normally opened because the sealing load of the valve seat is eliminated before the gate tries to be opened.

The invention relates to the technical field of gushing prevention of spiral conveying devices, and discloses a double-gate gushing-prevention spiral conveying device which comprises a shaft cavity formed in a driving shaft of a spiral conveyor body, a plurality of screening holes formed in the driving shaft, and a conveying cavity used for communicating the spiral conveyor body with the shaft cavity. And a filtering piece and a flow guide piece are arranged in the screening holes and used for separating out water media in the muck and then discharging the muck. In the process that water-containing muck passes through the conveying cavity, redundant water media in the muck are filtered out in real time and collected into the shaft cavity to be discharged, filtering and drainage are conducted at the same time, bentonite is not used, and the construction cost is reduced while spewing is prevented; when the conveying cavity is cleaned, the filtering piece can be reversely blown, the filtering performance of the filtering piece is ensured, and screening holes are prevented from being blocked.

The application relates to a double-gate-valve-based drainage anti-backflow and anti-blocking device. The double-gate-valve-based drainage anti-backflow and anti-blocking device comprises the following: a secondary pipeline is installed on a primary pipeline through a flange plate, a primary gate valve is installed on the secondary pipeline, a drain pipe is arranged on the secondary pipeline between the flange plate and the primary gate valve, the drain pipe is vertically downward, and a secondary gate valve is arranged on the drain pipe; the other end of the secondary pipeline is connected with a water pump through a hose, and the water pump is installed in a water collecting pit. The scheme provided by the application can physically isolate a backflow path through the primary gate valve arranged on the secondary pipeline, can reduce the leakage risk compared with a traditional check valve, can effectively reduce the damage of the water pump caused by the backflow of water flow in the pipeline, can drive a backwashing pipeline by using gravitational potential energy through the arrangement of the drain pipe and the secondary gate valve, can prevent the deposition of silt, can realize the anti-backflow and anti-blocking functions through the time sequence action of the double gate valves, and can empty the water flow in the main pipeline, and can reduce the starting load and starting current of the water pump.

The invention belongs to the technical field of ship maintenance auxiliary equipment, and particularly relates to a large-diameter electric wedge-type double-gate-disc gate valve adopting thread transmission. Comprising a valve seat, a valve plate, a base, a transmission mechanism and a driving mechanism, the valve seat is arranged under the water surface, the valve plate and the valve seat are arranged in a matched mode, the base is arranged above the valve seat, a lifting hole penetrating up and down is formed in the base, the transmission mechanism comprises a rotating cavity, a nut and a coupler, the rotating cavity is formed in the top of the base, and the nut is arranged in the rotating cavity. The nut is located in the rotating cavity, the top of the valve plate is connected with a lead screw, the lead screw penetrates through the lifting hole to be in threaded connection with the nut, and the driving mechanism drives the nut to rotate. The coupler rotates to drive the nut to rotate, so that the flashboard is opened and closed, the nut and the lead screw are connected above the water surface, and the lead screw and the nut are not in contact with sundries in a sea area and are prevented from being directly soaked in seawater. The lifting cavity and the rotating cavity play a protection role, and external force impact and collision are avoided. And normal operation of up-down opening and closing is ensured.

An integrated circuit (IC) having an array of active device cells and an array of dummy device cells and a method of manufacturing the same are disclosed. The IC includes a substrate, active device cells, and dummy device cells. The active device cells include an array of source / drain (S / D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures having a first gate fill material disposed on the substrate. The dummy device cells include a first array of S / D regions of the first conductivity type disposed on or within the substrate, a second array of S / D regions of a second conductivity type disposed on or within the substrate, and an array of double gate structures disposed on the substrate. Each double gate structure includes a first gate fill material and a second gate fill material different from the first gate fill material.

A high-temperature wear-resistant double-gate-plate control gate valve with flow guide lining corundum comprises a valve body and a valve cover, a valve rod and a valve seat are arranged in the valve body, the valve rod is connected with gate plates, the gate plates are matched with the valve seat in a sealing mode, a flow channel of the valve body is lined with corundum, flow guide holes are formed in the bottoms of the gate plates, the flow guide holes are lined with corundum, and a middle cavity is further formed in the bottom of the flow channel of the valve body. The flow guide hole comprises an opening position and a closing position, the opening position is aligned with the flow channel of the valve body, lining corundum on the flow channel and the flow guide hole forms a complete corundum straight pipeline, and the closing position is formed when the flow guide hole descends into the middle cavity along with the flashboard and the sealing face of the flashboard is matched with the valve seat in a sealing mode. When the gate plate is in the opening position, the gate plate is completely attached to the sealing face of the valve seat, the flow guide hole is completely aligned with the flow channel hole of the valve body, and when the whole valve is in the opening state, the flow channel forms a straight pipeline completely lined with corundum and is particularly resistant to abrasion and scouring, the situation that the flow channel is damaged by scouring is completely avoided, and the service life of the valve is prolonged. And the sealing surface of the valve body and the sealing surface of the flashboard are protected from being washed when the valve is opened.

The application discloses a kind of expansion double gate flat plate gate valve, comprising: valve body, gate assembly and valve stem.Valve stem on valve body is movably connected with gate assembly.Two interval settings are gate, and V-shaped groove is formed between the inclined surface of gate opposite.Two interval settings are slider, and slider is correspondingly arranged in V-shaped groove with gate.Slider and corresponding gate are slidably matched along inclined surface.Rotary member is arranged between two sliders.Two slider top encloses installation cavity.Valve stem drive end can be movably arranged in installation cavity.Drive end is suitable for acting between two sliders to drive two sliders to rotate around rotary member.Lifting assembly is connected slider and corresponding gate, and gate is lifted by lifting slider.Two interval settings slider can rotate slightly around rotary member under the action of valve stem, further two sliders promote two gates to rotate slightly, so that two gate sealing surface is always in close contact with the sealing surface of fixator, guarantee the sealing effect of valve body.

This invention discloses a blind valve combined sealing structure and single gate valves, double gate valves, and spherical gate valves. The blind valve combined sealing structure includes: a valve body, a valve seat, and a valve plate. The valve plate is placed in the inner cavity of the valve body, and the valve seat is placed in the flow channel of the valve body, with the valve seat and valve plate in sealing contact. A first annular sealing groove is provided on the outer peripheral wall of the valve seat, and the first annular sealing groove is filled with sealing grease for sealing contact with the inner wall of the flow channel of the valve body. A first inlet and outlet pipe is connected to the inner cavity and is used to pressurize the inner cavity to achieve high-pressure gas sealing or for valve sealing performance testing. The first inlet and outlet pipe is provided with a first inlet valve and a first outlet valve. The valve body of this invention adopts multiple seals to improve the sealing reliability of the valve body.

This utility model discloses a double-gate valve for thermal oil extraction, including a valve body with a flow passage. The valve body also has an upper control hole and a lower control hole that radially pass through the flow passage, with the flow passage located inside the upper and lower control holes. An upper gate and an upper gate control mechanism are sealed within the upper control hole; a lower gate and a lower gate control mechanism are sealed within the lower control hole. An anti-interference angle exists between the axes of the upper and lower control holes. The circumferential projections of the upper and lower gate control mechanisms along the flow passage overlap. This utility model can quickly handle leaks occurring at any point during steam injection, allowing for "zero-risk" repair and replacement of components, eliminating potential safety and environmental accidents, and achieving safe production.

A silicon carbide power device cell with double gate trenches is characterized in that a first gate channel region of a silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is formed along at least one side wall of a first type of gate trench and is connected with a first source region, and a second gate channel region of a silicon carbide super barrier rectifier (serving as an MOS (Metal Oxide Semiconductor) channel diode) is formed along the side wall of a second type of gate trench and is connected with a second source region; therefore, the loss of the turn-off switch is reduced. The first P shielding region surrounds the bottom region of the second-type gate trench and is connected to the source electrode metal through the side wall P-type region; and the second P shielding region is adjacent to the lower surface of the first body region, and forms a saturation current pinch-off region with the adjacent second P shielding region for improving the short-circuit capability and reducing the electric field of the gate oxide layer.

A fence post insert for adjusting a gate. The fence post insert allows for increasing or decreasing tension on a tensioning device within the gate post to adjust the tension on the gate post. This tension allows the gate post to move away from or toward the gate causing the gate to pull away from or move toward the opposing post or opposing gate section. The gate post insert allows for the adjustment of a gate by correcting a gate that is either too close or too far from the opposing side of the gate, typically either another post or a second gate, such as in double gate.

The utility model relates to the technical field of entry and exit gate, and disclose a prevent following's entry and exit gate, including right gate body, installation cover, gate and left gate body, the right gate body and left gate body between constitute the human passage. This kind of prevent following's entry and exit gate, through adopting double gate body: right gate body, left gate body constitute closed human passage, through rotating gate and carousel gate pole form double dynamic intercept structure, realize mechanical linkage's prevent following control, the gate of right gate body rotates open and shut along the pivot, cooperate the triangular mobile seat drive three gate poles of left gate body with 135 degree interval synchronous rotation, form the staggered type traffic control, effectively block personnel following or drill through, installation cover through the contraction joint sleeve joint pivot, combine fastening bolt one realizes quick assembly and readjustment, adapt different specifications pivot's while ensuring gate rotation concentricity, spring flexible connection installation cover, can buffer external force impact and reduce long -term wear and tear.

To suppress occurrence of step disconnection of an oxide semiconductor layer and to reduce resistance of a source region and a drain region of the oxide semiconductor layer in a TFT having a double gate structure.SOLUTION: The side TFT5a disposed for each of the sub-pixels constituting the display region includes a semiconductor-layer side 15ab in which a channel region side 15a, a source region side 15a, and a drain region side 10a are defined, a first gate-electrode side 15ac provided on the base substrate side 12a of the semiconductor-layer side so as to overlap the channel region side via a first gate insulating film 14, and a second gate-electrode side provided on the opposite side of the base substrate side of the semiconductor-layer side so as to overlap the channel region side via a second gate insulating film side. 15a 15ac 17a 10a 15ac 16a 15aa, the semi-conductor layer 15a is provided in a plane shape by an organic insulating film 10a disposed so as to overlap at least the source region 15aa and the drain region 15ab on the base substrate 13a side.SELECTED DRAWING: Figure 3

The invention relates to a gallium nitride driving circuit integrated with single and double gate poles and a gallium nitride power device, and belongs to the technical field of driving circuits. The gallium nitride driving circuit comprises a driving module used for generating a driving signal; wherein the driving module comprises a plurality of driving sub-modules; a plurality of gallium nitride modules, wherein each gallium nitride module comprises a plurality of gallium nitride transistors; each driving sub-module is connected with at least two gallium nitride transistors; the switch module comprises a plurality of switch units, and each switch unit is connected with one driving sub-module and one gallium nitride module; and the power supply module is connected with the driving module. The gallium nitride power device comprises the gallium nitride drive circuit. According to the invention, the topology adaptability and the anti-electromagnetic interference capability of the driving circuit are improved, and smooth switching of a single-gate-pole driving mode and a double-gate-pole driving mode is realized at the same time.

This invention relates to the field of valve technology and provides a parallel double-gate valve, comprising: a valve body, and a main gate and an auxiliary gate arranged parallel to each other within the valve body; and a structural connector, wherein the main gate and the auxiliary gate are connected by the structural connector, the structural connector creating a predetermined gap between the surfaces of the main gate and the auxiliary gate, and allowing the main gate and the auxiliary gate to be movably disposed within the valve body along their own axial direction. The parallel double-gate valve provided by this invention, with its structural connector creating a predetermined gap between the surfaces of the main gate and the auxiliary gate, ensures that they do not contact or interfere with each other after assembly; moreover, the main gate and the auxiliary gate can freely compensate for any misalignment of the valve body and valve seat sealing surfaces; simultaneously, the main gate and the auxiliary gate will not jam against the valve seat during temperature changes, thereby better fitting the sealing surfaces, achieving a seal, and ensuring sealing reliability.

The present invention relates to a micro LED driving circuit comprising a double gate transistor, and comprises: a PWM circuit unit for adjusting the light emission time of a micro LED; and a CCG circuit unit for controlling, on the basis of PWM data voltage, that a certain current is supplied during light emission of the micro LED.

The present application relates to Si 1‑x Ge x / Si heterojunction gate oxide layer ladder channel double gate tunnel field effect transistor; the purpose is to further improve the on-state current and on-off current ratio of double gate TFET (DGTFET) and reduce the subthreshold swing on the basis of relieving the bipolar effect problem of double gate TFET (DGTFET); it comprises a drain region, a channel region and a source region, the channel region is a ladder structure, the thin end of the channel region is connected with the source region, and the thick end of the channel region is connected with the drain region; both sides of the channel region are provided with ladder structure low-k gate oxide layers matched with the shape of the channel region, the step surface of the low-k gate oxide layer is located on the left side of the step surface of the channel region, and the thickness of the thin end of the low-k gate oxide layer is smaller than the thickness of the thick end of the low-k gate oxide layer; both sides of the thin end of the low-k gate oxide layer are provided with high-k gate oxide layers with the same length; the low-k gate oxide layer is prepared by using low-k dielectric material, and the high-k gate oxide layer is prepared by using high-k dielectric material; the source region is prepared by using Si 1‑x Ge x , the channel region and the drain region are prepared by using silicon.

The invention relates to a pilot-operated type parallel double-gate-disc gate valve. The valve comprises a valve body. The left valve seat and the right valve seat are oppositely arranged in the seat cavity of the valve body; the flashboard assembly comprises a right flashboard, a right auxiliary flashboard, a left auxiliary flashboard and a left flashboard; the outer side ends of the left gate plate and the right gate plate are matched with the left valve seat and the right valve seat respectively. The left gate plate and the right gate plate are radially provided with pressure relief holes of which the axes are parallel to a runner of the valve body; the left auxiliary flashboard and the right auxiliary flashboard are respectively positioned at the inner side ends of the left flashboard and the right flashboard; the elastic element is arranged between the right auxiliary flashboard and the left auxiliary flashboard so as to provide elastic acting force for the left auxiliary flashboard and the right auxiliary flashboard to be opposite and correspondingly abut against the inner side ends of the left flashboard and the right flashboard; and the valve rod is respectively connected with the right auxiliary gate plate and the left auxiliary gate plate. The risk of action jamming or jamming is reduced, an open type installation structure is adopted, internal parts are convenient and fast to replace, and it is guaranteed that the device operates safely, stably and efficiently.

A ferroelectric field effect transistor (FeFET) having a double-gate structure includes a first gate electrode, a first ferroelectric material layer over the first gate electrode, a semiconductor channel layer over the first ferroelectric material layer, source and drain electrodes contacting the semiconductor channel layer, a second ferroelectric material layer over the semiconductor channel layer, and a second gate electrode over the second ferroelectric material layer.

The utility model relates to a novel parallel double-disc gate valve which can be used in the fields of electric power, petrifaction, new energy and the like. The valve is composed of a valve body, a valve clack assembly, a valve rod, a support, a valve rod nut, a driving device and a valve seat. The valve body is welded with the valve seats, sealing surfaces of the two valve seats are parallel, and the distance is L; the valve clack assembly is composed of an auxiliary valve clack, a spring, a set screw, a gland, an anti-loose gasket and a main valve clack. The main valve clack and the auxiliary valve clack are pushed away by the spring to be tightly attached to the sealing face of the valve seat, and it is guaranteed that the valve is closed and sealed; in a free state, the distance H between the sealing faces of the main valve clack and the auxiliary valve clack is larger than L, the distance h between the adjacent end faces, namely the end face A and the end face E and the distance h between the end face D and the end face G, of the main valve clack and the auxiliary valve clack are larger than H-L, the main valve clack and the auxiliary valve clack move flexibly, and valve sealing is guaranteed. The size of the cavity in the valve body can be reduced, the overall height and weight of the valve are reduced, and the effect of effectively reducing the design and manufacturing cost of the valve is achieved.

A friction-free parallel double-gate-plate control gate valve comprises a valve body, a valve rod and a valve seat are arranged in the valve body, the valve rod is connected with a gate plate, the gate plate is matched with the valve seat in a sealing mode, the gate plate frame is in threaded connection with the valve rod, the gate plate is installed on the gate plate frame, and the gate plate frame comprises a wedge block with a wedge angle A; two round holes are machined in the positions, perpendicular to the inclined planes, of the two center points of the two inclined planes of the wedge block, the two round holes intersect at the centers, an inclined column table and a spherical ejector core are installed in the two round holes respectively, the inclined column table and the spherical ejector core are in clearance fit with the round holes, and the inclined column table and the spherical ejector core can freely swing in the round holes within a certain range. A step is arranged on the gate plate frame, a limiting block is arranged on the step, a first inclined face is milled on the limiting block, a wedge angle B is formed by the first inclined face of the limiting block, and the wedge angle B is equal to two wedge angles A. According to the gate valve, in the opening and closing process, a sealing pair has no friction, and the metal sealing faces of the valve seat and the gate plate are effectively protected; and during closing, the flashboard and the sealing surface of the valve seat can be pushed to be automatically aligned and sealed through the inclined column table and the spherical ejector core, only the respective planeness and smoothness of the sealing plane of the valve seat and the sealing plane of the flashboard need to be guaranteed during machining, all flashboards of the same specification can be freely exchanged and universally used, and other flashboard frames, limiting blocks, ejector cores, inclined column tables and the like are universally used.

The invention relates to the technical field of double-gate-plate flat gate valves, and provides a double-gate-plate flat gate valve capable of preventing overpressure explosion of a middle cavity to solve the problems that when an existing valve is opened and closed, a sealing pair is seriously abraded, the middle cavity is prone to explosion due to overpressure, and an existing pressure relief scheme is poor in applicability. An adjusting device capable of adjusting sealing specific pressure is arranged at the lower end of a valve rod, and a flashboard assembly is provided with an elastic telescopic pull rod; the flashboard assembly adopts a structure that a top block and a push block with inclined plane transmission are matched with a telescopic cylindrical sleeve, when the flashboard assembly is closed, a left flashboard firstly seals an inlet cavity, residual media in a middle cavity are automatically emptied through an outlet cavity, then a right flashboard seals the outlet cavity, and a pressure release valve does not need to be additionally arranged. The abrasion loss of a sealing pair is effectively reduced, the overpressure risk of a middle cavity is thoroughly avoided, the valve is suitable for high-pressure, high-temperature and highly toxic / flammable and explosive medium working conditions, the service life of the valve is greatly prolonged, and the operation safety of the valve is greatly improved.