121 results about "Double gate" patented technology

The disclosure relates to a π type trench gate silicon carbide MOSFET device and a fabrication method thereof. To protect a trench gate oxide layer without increasing a channel resistance and process complexity, a second conductivity type of heavily doped deep well inserted with double gate trenches along the sidewalls of deep well is designed. The deep well is connected to the source metal directly. The electric potential is clamped to the source during the voltage blocking and turn-off state, which reduces the electric field in the gate oxide and reduces the miller capacitance. An interlayer dielectric layer is deposited above the conductive dielectric polysilicon layers and extends outward separately to cover a part of the source region. A smaller cell pitch can be achieved by controlling the spacing between the first and the second trench gate, thereby increasing the channel density and reducing the channel resistance.

The present invention relates to a micro LED driving circuit including a double gate transistor, and includes a PWM circuitry for controlling the emission time of the micro LED; and a CCG circuitry that controls a constant current to be supplied while the micro LED emits light based on the PWM data voltage.

The invention relates to the field of gate valves, and particularly discloses a high-pressure parallel type friction-free double-gate-plate gate valve which comprises a valve body and two valve seats arranged in the valve body, and further comprises a gate plate frame and two gate plate assemblies arranged on the gate plate frame in a sliding mode. The two flashboard assemblies are located on the two sides of the flashboard frame in the opening and closing direction respectively and used for abutting against different valve seats respectively, a pushing structure is arranged between the flashboard frame and the flashboard assemblies, the flashboard frame drives the flashboard assemblies to move through the pushing structure, and the pushing structure comprises a pushing face and a pushing piece arranged corresponding to the pushing face. The pushing faces are arranged on the gate frame and / or the gate assembly, the distance between the pushing faces of the two pushing structures is decreased progressively in the closing direction, the pushing faces abut against the pushing piece, the pushing piece abuts against the gate frame and the gate assembly, and when the gate assembly abuts against the valve seat, a gap exists between the gate frame and the inner wall of the valve body in the closing direction. The double-gate-plate gate valve has the effect of reducing friction force needing to be overcome when the double-gate-plate gate valve is opened and closed.

A method for forming a semiconductor structure includes the following operations. A substrate is provided. The substrate includes double heterostructures arrayed along a first direction and a second direction. Each of the double heterostructures includes a first semiconductor layer, a second semiconductor layer and another first semiconductor layer sequentially arranged along the first direction. A forbidden band gap of the first semiconductor layer is different from a forbidden band gap of the second semiconductor layer. The first direction is perpendicular to the second direction, and both the first direction and the second direction are parallel to a direction of a plane where the substrate is located. A double gate structure is formed on sidewalls of each of the double heterostructures along the first direction.

Fluid channels are formed in a valve body, and valve seats are arranged on the side walls of the valve body between a first channel and a second channel of the fluid channels. The double-flashboard assembly comprises a first flashboard and a second flashboard which are movably connected together, and an elastic piece is arranged between the first flashboard and the second flashboard. The valve rod is connected with the double-gate-plate assembly and can drive the double-gate-plate assembly to move. When the double-gate plate assembly moves to be in complete sealing contact with the valve seat, a cavity is formed between the first gate plate and the second gate plate. The bypass assembly comprises a third connecting pipe and further comprises a first connecting pipe and / or a second connecting pipe; a pipeline connected with the third connecting pipe and the first connecting pipe can enable a medium in the first channel to flow into the cavity in a one-way manner; and / or a pipeline connected with the third connecting pipe and the second connecting pipe can enable the medium in the second channel to flow into the cavity in a one-way manner. Opening and closing torque of the gate valve can be effectively reduced, abrasion of a sealing face is reduced, and the service life of the gate valve is prolonged.

A display device including a light-emitting element, and a first transistor connected between a driving voltage line and the light-emitting element, the first transistor including a first gate electrode and a second gate electrode that face each other, and an active layer between the first gate electrode and the second gate electrode. The display device further includes a first data line connected to the first gate electrode of the first transistor, a second data line connected to the second gate electrode of the first transistor, and a data driver connected to the first data line and the second data line. The data driver applies a first data voltage to the first data line and applies a second data voltage having a different magnitude from the first data voltage to the second data line. The magnitude of the second data voltage varies depending on the magnitude of the first data voltage.

A semiconductor device with a dual-gate structure, a method for manufacturing the same, and an electronic device including such a semiconductor device are disclosed. According to an embodiment, the semiconductor device may include: a vertical channel portion on a substrate; source / drain portions located at the upper and lower ends of the channel portion relative to the substrate; a first gate stack on a first side of the channel portion in a first direction laterally relative to the substrate; and a second gate stack on a second side of the channel portion opposite to the first side in the first direction. The distance between at least one edge of the upper and lower edges of the first gate stack near the channel portion in the vertical direction and the corresponding source / drain portion may be less than the distance between at least one edge of the upper and lower edges of the second gate stack near the channel portion in the vertical direction corresponding to the aforementioned at least one edge and the corresponding source / drain portion.

The disclosure relates to a π type trench gate silicon carbide MOSFET device and a fabrication method thereof. To protect a trench gate oxide layer without increasing a channel resistance and process complexity, a second conductivity type of heavily doped deep well inserted with double gate trenches along the sidewalls of deep well is designed. The deep well is connected to the source metal directly. The electric potential is clamped to the source during the voltage blocking and turn-off state, which reduces the electric field in the gate oxide and reduces the miller capacitance. An interlayer dielectric layer is deposited above the conductive dielectric polysilicon layers and extends outward separately to cover a part of the source region. A smaller cell pitch can be achieved by controlling the spacing between the first and the second trench gate, thereby increasing the channel density and reducing the channel resistance.

The invention provides a display panel and a display device. The display panel gate drive circuit comprises a signal generation module and an output module which are electrically connected, the signal generation module comprises at least one first-type signal transistor, the output module comprises at least one output transistor, and the first-type signal transistor and the output transistor are both P-type transistors. A shading layer of the display panel comprises a first signal bottom grid electrode of a first type signal transistor and an output bottom grid electrode of an output transistor. According to the invention, the proportion of the number of the output transistors with the output bottom gates in the output module is greater than or equal to the proportion of the number of the first-type signal transistors with the first signal bottom gates in the signal generation module, so that the proportion of double gates of the P-type transistors in the signal generation module is reduced; equivalently, the area of the bottom grid electrode in the grid electrode driving circuit is reduced, so that the water vapor invasion area in the light shielding layer is reduced, and the technical problem that the light shielding metal layer of the display panel is corroded is solved.

The utility model discloses a rotary type double-gate valve which comprises a valve body, a valve body channel is formed in the center of the valve body in the vertical direction, and an adjusting cavity which extends towards the outer portion of the front end of the valve body and facilitates rotary opening and closing of valve body gates is formed in the center of the inner side of the valve body channel. Through the combined use of the air cylinder, the connecting rod, the flashboard rotating shaft, the swing arm, the spring, the connecting sleeve, the connector, the spring seat, the connecting sleeve ring piece and the valve body, the flashboard rotating shaft can be driven to rotate under the swing of the connecting amplitude driven by the air cylinder; the other end of the flashboard rotating shaft drives the swing arm to drive the two flashboards to rotate and move in the adjusting cavity through the spring to open or close the double-flashboard valve, so that rotary opening and closing of the double-flashboard valve can be realized, and telescopic transmission of the flashboards is changed into rotary opening and closing; when the gate rotating shaft rotates, adhered ash cannot be brought out of the valve body to reduce the sealing performance of the double-gate valve, so that the service life of the double-gate valve can be prolonged.

The invention relates to a reverse-blowing duplex gate valve, and belongs to the technical field of gate valves. Comprising a pipeline body and two gate valve assemblies connected to the pipeline body in series, each gate valve assembly comprises a valve body, a valve rod and a gate plate, guide ribs are arranged on the inner walls, located on the two sides of the gate plate, of the valve bodies respectively, and guide grooves are formed in the two sides of the gate plate respectively; the valve rod is fixedly connected with a piston plate, the piston plate is located above the gate plate, and the piston plate divides the interior of the valve body into a gate plate cavity located below the piston plate and a piston cavity located above the piston plate. Guide ribs are arranged on the two sides of the valve body, guide channels connected to the gate plate cavity and the piston cavity are formed in the guide ribs on the two sides, when the piston plate moves in the valve body, pressure difference is formed between the gate plate cavity and the piston cavity, and when fluid moves downwards along the guide channels, channels between the valve seats are flushed. According to the invention, the problem that impurities are easy to accumulate in the channel in the valve body in the prior art is solved.

The application discloses a boosting ignition circuit and belongs to the technical field of fuzes. The boosting ignition circuit comprises a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boosting circuit and an ignition control circuit. The boosting ignition circuit solves the technical problem of high reliability of fuze ignition. The boosting ignition circuit is stable and reliable, and double gate control guarantees safety. The boosting ignition circuit can be applied in applications with small ignition current demand.

A double-brake tempering ring for automatic weld joint treatment relates to the technical field of weld joint treatment and comprises a clamping part, a tempering ring adjusting part, a conveying part and a drill rod. The clamping part, the tempering ring adjusting part and the conveying part are fixedly installed on the ground, and a controller is fixedly installed on the clamping part. A signal processor in the controller is used for receiving a signal, and a central processing unit in the controller is used for controlling electric elements of the equipment to operate orderly; the drill rod is inserted into the clamping part, the tempering ring adjusting part and the conveying part; the equipment can be used for clamping drill rods with different sizes, so that the cost of purchasing drill rods with different sizes is reduced; meanwhile, a traditional single-brake tempering ring is improved, a double-brake tempering ring is additionally arranged, the power consumption is saved, the welding seam performance and other aspects are obviously improved compared with a single-brake tempering mode, and the double effects of reducing cost and improving quality are achieved.

The utility model discloses a storage battery module and electric equipment, and relates to the technical field of power supplies. The storage battery module comprises a mounting main body, a double-gate switch and a plurality of storage batteries, a positive terminal and a negative terminal are arranged on the mounting main body, the double-gate switch is arranged on the mounting main body and is provided with a first terminal, a second terminal, a third terminal and a fourth terminal, the first terminal is connected with the positive terminal, and the second terminal is connected with the negative terminal. The second terminal is connected with the negative terminal; the plurality of storage batteries are detachably arranged on the mounting main body, and the third terminal, the plurality of storage batteries and the fourth terminal are sequentially connected in series; and when the double-gate switch is closed, the third wiring terminal is conducted with the first wiring terminal, and the fourth wiring terminal is conducted with the second wiring terminal. The storage battery module provided by the utility model has the characteristic of higher use safety.

The invention discloses a thin film transistor with a vertical double-gate structure and a manufacturing method thereof, and relates to the technical field of display screens. Comprising a glass substrate, a first oxide layer arranged on the glass substrate, a grid electrode arranged on the first oxide layer, a grid electrode insulating layer arranged on the first oxide layer and covering the grid electrode, an active layer arranged on the grid electrode insulating layer, a first metal layer arranged on the active layer, and an ohm contact layer arranged on the active layer and covering the first metal layer, the oxide semiconductor structure is arranged on the first metal layer, the second metal layer is arranged on the first metal layer, and the third metal layer is arranged on the packaging layer; according to the thin film transistor with the vertical dual-gate structure and the manufacturing method of the thin film transistor, the problems that high mobility and low leakage current of an existing thin film transistor are difficult to consider at the same time, and the layout area of a traditional structure is large are solved.

The invention discloses a display panel and a display device. A first data line is arranged in the display panel and connected with a first pixel circuit in a first sub-pixel and a second pixel circuit in a second sub-pixel, meanwhile, a first sub-scanning line and a second sub-scanning line are further arranged, the first sub-scanning line is connected with the first pixel circuit in the first sub-pixel, and the second sub-scanning line is connected with the second pixel circuit in the second sub-pixel. The second sub-scanning line is connected with a second pixel circuit in the second sub-pixel, and when one of the first power supply signal line and the initialization signal line is set to extend along the second direction like the first data line, at least one signal line has different line widths in different areas in the second direction. According to the invention, the space in the row direction can be saved by utilizing a double-grid line driving technology, and meanwhile, based on the requirements of actual space layout and the like, the line width of at least part of signal lines extending in the column direction is adaptively increased, the adaptive line width and the line width differentiation design adaptive to space distribution are obtained, line breakage is avoided, and poor display of the panel is prevented.

A method for manufacturing a split double gate transistor includes: forming a first fin on a substrate; removing sacrificial layers from a portion of the first fin; sequentially forming a first gate insulating layer, a channel layer and a protection layer on exposed portions of each gate metal layer; performing a patterning process to form a second fin; patterning the second fin to form a plurality of first recesses and a plurality of second recesses; forming a plurality of inner spacer layers; forming a first gate component, a drain component and a source component; removing the protection layer; and sequentially forming a second gate insulating layer, a plurality of gate connectors, and a second gate component.

A transistor may include an active layer including a first end area, a middle area adjacent to the first end area, and a second end area spaced from the first end area by the middle area, a first electrode on the active layer, overlapping the first end area, and connected to the first end area through a first contact hole, an upper gate electrode on the active layer, overlapping the middle area, at a same layer as the first electrode, and to receive a gate signal and a lower gate electrode under the active layer, overlapping the first contact hole and the middle area, and to receive the gate signal.

The utility model relates to the technical field of electric isolation gate valves, and discloses a large-caliber low-pressure bypass inlet electric isolation gate valve which comprises a valve body, a valve seat is arranged in the middle of the valve body, linings are arranged on the inner side walls of the two ends of the valve body, a valve deck is installed at the upper end of the valve body, and a valve cover is installed at the lower end of the valve deck. An electric head with a hand wheel is arranged at the top of the valve deck, the left end of the valve body is connected with an automatic cleaning filter, a left gate plate is arranged in the valve seat, a valve element is arranged on the right side of the left gate plate, and a right gate plate is arranged on the right side of the valve element. The left gate plate and the right gate plate are arranged, the wedge type double-gate-plate structure is adopted, and the wedge type double-gate-plate structure can solve the problems that in actual working conditions, a wedge type single-gate-plate structure is prone to generating, if the valve body is subjected to accidental pressure or torque, the valve body is likely to be twisted, and the gate plates cannot be normally opened; however, the double-gate structure can still be normally opened because the sealing load of the valve seat is eliminated before the gate tries to be opened.

The invention relates to the technical field of gushing prevention of spiral conveying devices, and discloses a double-gate gushing-prevention spiral conveying device which comprises a shaft cavity formed in a driving shaft of a spiral conveyor body, a plurality of screening holes formed in the driving shaft, and a conveying cavity used for communicating the spiral conveyor body with the shaft cavity. And a filtering piece and a flow guide piece are arranged in the screening holes and used for separating out water media in the muck and then discharging the muck. In the process that water-containing muck passes through the conveying cavity, redundant water media in the muck are filtered out in real time and collected into the shaft cavity to be discharged, filtering and drainage are conducted at the same time, bentonite is not used, and the construction cost is reduced while spewing is prevented; when the conveying cavity is cleaned, the filtering piece can be reversely blown, the filtering performance of the filtering piece is ensured, and screening holes are prevented from being blocked.

The application relates to a double-gate-valve-based drainage anti-backflow and anti-blocking device. The double-gate-valve-based drainage anti-backflow and anti-blocking device comprises the following: a secondary pipeline is installed on a primary pipeline through a flange plate, a primary gate valve is installed on the secondary pipeline, a drain pipe is arranged on the secondary pipeline between the flange plate and the primary gate valve, the drain pipe is vertically downward, and a secondary gate valve is arranged on the drain pipe; the other end of the secondary pipeline is connected with a water pump through a hose, and the water pump is installed in a water collecting pit. The scheme provided by the application can physically isolate a backflow path through the primary gate valve arranged on the secondary pipeline, can reduce the leakage risk compared with a traditional check valve, can effectively reduce the damage of the water pump caused by the backflow of water flow in the pipeline, can drive a backwashing pipeline by using gravitational potential energy through the arrangement of the drain pipe and the secondary gate valve, can prevent the deposition of silt, can realize the anti-backflow and anti-blocking functions through the time sequence action of the double gate valves, and can empty the water flow in the main pipeline, and can reduce the starting load and starting current of the water pump.

The invention belongs to the technical field of ship maintenance auxiliary equipment, and particularly relates to a large-diameter electric wedge-type double-gate-disc gate valve adopting thread transmission. Comprising a valve seat, a valve plate, a base, a transmission mechanism and a driving mechanism, the valve seat is arranged under the water surface, the valve plate and the valve seat are arranged in a matched mode, the base is arranged above the valve seat, a lifting hole penetrating up and down is formed in the base, the transmission mechanism comprises a rotating cavity, a nut and a coupler, the rotating cavity is formed in the top of the base, and the nut is arranged in the rotating cavity. The nut is located in the rotating cavity, the top of the valve plate is connected with a lead screw, the lead screw penetrates through the lifting hole to be in threaded connection with the nut, and the driving mechanism drives the nut to rotate. The coupler rotates to drive the nut to rotate, so that the flashboard is opened and closed, the nut and the lead screw are connected above the water surface, and the lead screw and the nut are not in contact with sundries in a sea area and are prevented from being directly soaked in seawater. The lifting cavity and the rotating cavity play a protection role, and external force impact and collision are avoided. And normal operation of up-down opening and closing is ensured.

An integrated circuit (IC) having an array of active device cells and an array of dummy device cells and a method of manufacturing the same are disclosed. The IC includes a substrate, active device cells, and dummy device cells. The active device cells include an array of source / drain (S / D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures having a first gate fill material disposed on the substrate. The dummy device cells include a first array of S / D regions of the first conductivity type disposed on or within the substrate, a second array of S / D regions of a second conductivity type disposed on or within the substrate, and an array of double gate structures disposed on the substrate. Each double gate structure includes a first gate fill material and a second gate fill material different from the first gate fill material.

A high-temperature wear-resistant double-gate-plate control gate valve with flow guide lining corundum comprises a valve body and a valve cover, a valve rod and a valve seat are arranged in the valve body, the valve rod is connected with gate plates, the gate plates are matched with the valve seat in a sealing mode, a flow channel of the valve body is lined with corundum, flow guide holes are formed in the bottoms of the gate plates, the flow guide holes are lined with corundum, and a middle cavity is further formed in the bottom of the flow channel of the valve body. The flow guide hole comprises an opening position and a closing position, the opening position is aligned with the flow channel of the valve body, lining corundum on the flow channel and the flow guide hole forms a complete corundum straight pipeline, and the closing position is formed when the flow guide hole descends into the middle cavity along with the flashboard and the sealing face of the flashboard is matched with the valve seat in a sealing mode. When the gate plate is in the opening position, the gate plate is completely attached to the sealing face of the valve seat, the flow guide hole is completely aligned with the flow channel hole of the valve body, and when the whole valve is in the opening state, the flow channel forms a straight pipeline completely lined with corundum and is particularly resistant to abrasion and scouring, the situation that the flow channel is damaged by scouring is completely avoided, and the service life of the valve is prolonged. And the sealing surface of the valve body and the sealing surface of the flashboard are protected from being washed when the valve is opened.

The present disclosure relates to a double gate neuromorphic memory device and a manufacturing method thereof. The double gate neuromorphic memory device is an electrochemical device, and includes a bottom gate provided on an upper portion of a semiconductor substrate, a channel area surrounding the upper portion and side surfaces of the bottom gate, a source electrode and a drain electrode provided in contact with both sides of the channel area, and a top gate provided on an upper portion of a channel area between the source electrode and the drain electrode.

The application discloses a kind of expansion double gate flat plate gate valve, comprising: valve body, gate assembly and valve stem.Valve stem on valve body is movably connected with gate assembly.Two interval settings are gate, and V-shaped groove is formed between the inclined surface of gate opposite.Two interval settings are slider, and slider is correspondingly arranged in V-shaped groove with gate.Slider and corresponding gate are slidably matched along inclined surface.Rotary member is arranged between two sliders.Two slider top encloses installation cavity.Valve stem drive end can be movably arranged in installation cavity.Drive end is suitable for acting between two sliders to drive two sliders to rotate around rotary member.Lifting assembly is connected slider and corresponding gate, and gate is lifted by lifting slider.Two interval settings slider can rotate slightly around rotary member under the action of valve stem, further two sliders promote two gates to rotate slightly, so that two gate sealing surface is always in close contact with the sealing surface of fixator, guarantee the sealing effect of valve body.

This invention discloses a blind valve combined sealing structure and single gate valves, double gate valves, and spherical gate valves. The blind valve combined sealing structure includes: a valve body, a valve seat, and a valve plate. The valve plate is placed in the inner cavity of the valve body, and the valve seat is placed in the flow channel of the valve body, with the valve seat and valve plate in sealing contact. A first annular sealing groove is provided on the outer peripheral wall of the valve seat, and the first annular sealing groove is filled with sealing grease for sealing contact with the inner wall of the flow channel of the valve body. A first inlet and outlet pipe is connected to the inner cavity and is used to pressurize the inner cavity to achieve high-pressure gas sealing or for valve sealing performance testing. The first inlet and outlet pipe is provided with a first inlet valve and a first outlet valve. The valve body of this invention adopts multiple seals to improve the sealing reliability of the valve body.

The invention discloses a sinusoidal staggered double-grid slow-wave structure, which relates to the field of vacuum electronic technology and solves the problems of large transmission loss and narrow bandwidth of the existing slow-wave structure. The key points of the technical solution are: comprising an upper grid portion and a lower grid portion respectively arranged on the upper and lower sides, the upper grid portion and the lower grid portion both form sinusoidal protrusions at equal intervals along the axial direction to form a periodic waveguide curve, and the periodic waveguide curve of the upper grid portion and the periodic waveguide curve of the lower grid portion have a phase difference; the mutation point in the field of the traditional rectangular protrusion is reduced by the smooth sinusoidal protrusion, thereby reducing the loss of electromagnetic waves in the transmission process, and the sinusoidal protrusions of the upper and lower grid portions are staggered, which has a higher bandwidth than the traditional staggered double-grid slow-wave structure, and provides a traveling wave tube slow-wave structure with improved output power for submillimeter wave bands and terahertz wave bands.