783results about How to "Improve current carrying capacity" patented technology

A system and method capable of performing multiple types of non-invasive tomographic techniques. The system is capable, via electronic control, of detecting and imaging materials within a volume using electrical capacitance, displacement phase current, magnetic inductance, and magnetic pressure sensing. The system is also able to control the amplitude, phase, and frequency of individual electrode excitation to increase imaging resolution and phase detection. This allows many dimensions of non-invasive data to be captured without the need for multiple instruments or moving parts, at a high data capture rate.

A new class of high-density, vertical Fin-FET devices that exhibit low contact resistance is described. These vertical Fin-FET devices have vertical silicon “fins” (12A) that act as the transistor body. Doped source and drain regions (26A, 28A) are formed at the bottoms and tops, respectively, of the fins (12A). Gates (24A, 24B) are formed along sidewalls of the fins. Current flows vertically through the fins (12A) between the source and drain regions (26A, 28A) when an appropriate bias is applied to the gates (24A, 24B). An integrated process for forming pFET, nFET, multi-fin, single-fin, multi-gate and double-gate vertical Fin-FETs simultaneously is described.

A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.

A new class of high-density, vertical Fin-FET devices that exhibit low contact resistance is described. These vertical Fin-FET devices have vertical silicon “fins” (12A) that act as the transistor body. Doped source and drain regions (26A, 28A) are formed at the bottoms and tops, respectively, of the fins (12A). Gates (24A, 24B) are formed along sidewalls of the fins. Current flows vertically through the fins (12A) between the source and drain regions (26A, 28A) when an appropriate bias is applied to the gates (24A, 24B). An integrated process for forming pFET, nFET, multi-fin, single-fin, multi-gate and double-gate vertical Fin-FETs simultaneously is described.

An implantable lead for transmitting electrical signals between a proximal end and a distal end comprises an elongated lead body defining a longitudinally-extending lumen, and a plurality of individual electrical conductors contained in the lumen of the lead body and extending between the proximal and distal ends, the plurality of individual conductors sharing a common insulating coating. Each of the plurality of individual electrical conductors preferably comprises a braided, multifilar cable conductor. In one embodiment, the common insulating coating electrically isolates the plurality of conductors from each other, and may include a bridging portion extending between individual conductors.The plurality of electrical conductors and the common insulating coating comprise a conductor assembly that may have a helical configuration defining a longitudinally-extending passageway for receiving a stylet, guide wire, or the like, for placement of the distal end of the lead. Alternatively, the conductor assembly may have a tubular configuration, the plurality of individual conductors being embedded therein in spaced-apart, parallel relationship or along a generally helical path along the length of the lead body for greater lead flexibility.

A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.

A compliant printed circuit semiconductor package including a compliant printed circuit with at least a first dielectric layer selectively printed on a substrate with first recesses. A conductive material is printed in the first recesses to form contact members accessible along a first surface of the compliant printed circuit. At least one semiconductor device is located proximate the first surface of the compliant printed circuit. Wirebonds electrically couple terminals on the semiconductor device to the contact members. Overmolding material seals the semiconductor device and the wirebonds to the first surface of the compliant printed circuit. Contact pads on a second surface of the compliant printed circuit are electrically coupled to the contact members.

A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.

A multilayer circuit board, in which a plurality of insulating layers and a plurality of conductive layers, each of which includes a conductive pattern, have been laminated, includes an insulating layer, a conductive compound, and a conductive pattern. The insulating layer has a trench. The conductive compound is located in the trench. The conductive pattern adjoins the trench and is electrically connected to the conductive compound. The conductive pattern and the conductive compound make up a conductive wire that has a higher current-carrying capacity than the conductive pattern.

High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.

Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment of the present invention, a shielding mesh of at least two reference voltages (e.g., power and ground) is used to reduce both the capacitive coupling and the inductive coupling in routed signal wires in IC chips. In some embodiments, a type of shielding mesh (e.g., a shielding mesh with a window surrounded by a power ring, or a window with a parser set of shielding wires) is selected to make more routing area available in locally congested areas. In other embodiments, the shielding mesh is used to create or add bypass capacitance. Other embodiments are also disclosed.

The invention discloses arc extinguish chambers of a high voltage alternating current SF6 pot-type breaker. The invention is characterized in that an arc extinguish chamber system comprises a shell with the arc extinguish chambers, plum blossom contact systems, fixed contact systems, capacitor assembling units, air cylinder systems, a mechanical drive system, ion capturing systems, compressed airpiston assembling units, intermediate contact assembling units, insulation supporting bars, moving end large shields and fixed end large shields; the arc extinguish chambers are of double-break structure and are symmetrically distributed, with the mechanical drive system as the center; the middle mechanical drive system moves along the vertical direction; and vertical movement of the mechanical drive system is transformed to horizontal movement through crankarms and connecting rods in the mechanical drive system to drive the two air cylinder systems of the arc extinguish chambers to move horizontally to switch off and switch on the switchgear. Through promoting the technology of the integral arc extinguish chamber of the breaker, the arc extinguish chambers have more uniform electrical field, high insulation level, stronger breaking capability and high current-carrying capability and is safer to operate.

A semiconductor device including: a plurality of semiconductor units each constituting a three-level inverter circuit; and a connection unit electrically connecting the plurality of semiconductor units in parallel, wherein each of the semiconductor units includes: a multi-layer substrate including an insulating plate and circuit plates disposed on a primary surface of the insulating plate; a plurality of semiconductor elements each having a back surface thereof fixed to one of the circuit plates and a front surface thereof having primary electrodes; and wiring members electrically connected to the primary electrodes of the semiconductor elements, and wherein in each of the semiconductor units, the multi-layer substrate, the plurality of semiconductor elements, and the wiring members are configured in such a way as to constitute the three-level inverter circuit.

The invention discloses an electric locomotive pantograph carbon slide plate, which is made of the following raw materials in parts by weight: 4.3-6.3 parts of semi-reinforcing hydrocarbon black, 1.5-3.5 parts of 398 crystalline flake graphite, 0.8-2.8 parts of 599 crystalline flake graphite, 0.5-1.5 parts of charcoal powder, and 4.6-6.6 parts of melting coal pitch. The preparation method comprises technical steps of: hot mixing, rolling, grinding, pressing, roasting, impregnating, graphitizing, rough machining, impregnating, solidifying, finish machining, impregnating, bonding by adhesive, solidifying and product inspecting. The electric locomotive pantograph carbon slide plate has the advantages of unique wear resisting and self-lubricating performance; low resistivity, small bonding resistance, strong ability for inhibiting spark, and good current carrying capacity, thus being suitable for working condition of high power and high current; uniform and compact structure, relatively high mechanical strength and impact resistance; and good corrosion resistance, thus being suitable for working in various environmental and climate conditions.

The invention discloses a bronze process Nb3Sn superconductor multi-core wire connector and a preparation method thereof. From an inner layer to an outer layer, the connector structure comprises a stabilizing core, a super-conduction connection unit, an Nb tube and a Cu tube which are adhered to one another tightly. The super-conduction unit comprises an Nb wire, an Nb3Sn compound layer and a Cu-Sn alloy coating from the inner layer to the outer layer, wherein the Nb wires of different superconductor multi-core wires to be connected in the same super-conduction connection unit are overlapped mutually; the Cu-Sn alloy coating is deposited on the surface of the Nb wire; the Nb3Sn compound layer is generated by solid dispersion between the Nb wire and the Cu-Sn alloy coating in a thermal-treatment reaction process; the Nb3Sn compound layers on the surfaces of the different superconductor multi-core Nb wires are bridged and communicated mutually to conduct a super-conduction function; and thus, the bronze process Nb3Sn superconductor multi-core wire connector keeps low impedance and low loss at a super-conduction temperature.

A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.

The invention provides a nerve conduit material having a topological structure and modified by a CNT (Carbon Nano Tube) / conducting polymer composite coating and a preparation method of the nerve conduit material. With electro-spun polymer fibers as templates, CNTs are deposited on the surface of a substrate by use of an electrophoresis method so as to form a three-dimensional porous network CNT coating, next, solvent cleaning and ultrasonic stripping are carried out to form the CNT coating with a directional groove structure, then a conducting polymer is deposited by use of electro-chemical impulse polymerization, and the conducting polymer is coaxially wound around the surface of the CNT bundle to form the nerve conduit material modified by the CNT / conducting polymer composite coating having the directional groove structure. The surface of the nerve conduit material has two layers in the topological structure: at micrometer scale, the coating is provided with a patterned micrometer-scale groove for guiding the rearrangement of a neural cytoskeleton; at nanometer scale, the coating is provided with a nanometer-scale porous network structure for guaranteeing the physical conditions for the attachment and growth of nerve cells and excellent electrochemical properties of the nerve conduit.

A power semiconductor module having a substrate (102), at least one power semiconductor device (104) and at least one lead frame element (106), and a method for producing such a power semiconductor module (100). The connection between the at least one first lead frame element and the power semiconductor device as well as the connection between the first lead frame element and the substrate comprise a sintered metal connection (110), preferably a sintered silver connection.

The present invention relates to ferrite material of NiZn and method for manufacturing, and belongs to manufacturing technology field of ferrite material. The main constituent is calculated by oxide with molar percentage: 48.5-52.5mol% Fe2O3,25-33mol%ZnO,0.5-8.0mol%CuO, allowance being NiO; doping agent is calculated by oxide with molar percentage 0.001-0.15wt%CaO, 0.01-0.12wt% MoO3, 0.01-0.08wt%Bi2O3, 0.01-0.20wt%Nb2O5, 0.01-0.20wt% SnO2, 0.01-0.16wt%V2O5. The beneficial effect of the present invention is, first, improving power density, implementing miniaturization; second, improving reliability of electric system.

A method, and structures for implementing enhanced interconnects for high conductivity applications. An interconnect structure includes an electrically conductive interconnect member having a predefined shape with spaced apart end portions extending between a first plane and a second plane. A winded graphene ribbon is carried around the electrically conductive interconnect member, providing increased electrical current carrying capability and increased thermal conductivity.

The invention provides a rigid contact net expansion joint, which belongs to the field of rail transit equipment and solves the problems that the existing expansion joint has low compensation amount to cause high total manufacturing cost and the like. The rigid contact net expansion joint is arranged between two bus bars. The rigid contact net expansion joint is characterized by comprising a fixed joint and a movable joint which can conduct electricity; the fixed joint and the movable joint are used for fixing with the connecting end of one of the bus bars respectively; a guide piece with electric conductivity for connecting the fixed joint and the movable joint is arranged between the fixed joint and the movable joint; the fixed joint is fixed with the guide piece; the movable joint can move along with the guide piece; and a contact line 1 for transmitting current to an electric system of a train is fixedly arranged on the guide piece. The rigid contact net expansion joint is a plug-in expansion joint, and the adjacent two bus bars and the expansion joint are arranged on the same straight line, so the expansion joint is favorable for improving the utilization rate of the bus bars, equivalently improving the length of an anchorage section, and has large compensation amount.

An on-the-go twist-on wire connector for enhancing the current carrying capacity of the electrical wires contained therein with the housing having a closed end and an open end with a wire engaging coil located in the closed end of the housing for bringing a plurality of wires into surface-to-surface contact to provide a direct surface-to-surface electrical path for flow of electrical energy therebetween. Located in the twist-on wire connector is a wire adhereable electrically conducting medium the adhereable electrical conducting medium is conformable around the plurality of wires as the plurality of wires are brought into surface-to-surface engagement with the conformable electrical conducting medium thereby forming an indirect current path between the ends of the plurality of wires while retaining the on-the-go ability of the twist-on wire connector to form the electrical connection solely through twisting action.

The invention relates to a thyristor-based passive hybrid direct current circuit breaker and an application method therefor. The passive hybrid direct current circuit breaker comprises a main through-flow branch, a first transfer current branch, a second transfer branch and an energy absorption branch which are connected in parallel, wherein the main through-flow branch consists of a rapid mechanical switch K and a small amount of fully-controlled power electronic units which are connected in series; the first transfer current branch consists of two groups of thyristor valves T1 which are connected in an anti-parallel manner; the second transfer current branch consists of a capacitor C, an inductor L and a group of thyristor valves T2 which are connected in an anti-parallel manner; the inductor and a thyristor valve connecting line are connected with one end of a resistor while the other end of the resistor R is grounded; and the energy absorption branch consists of series-wound arrester groups. By adoption of the technical scheme provided by the invention, the problem that the current breaking capability of the existing hybrid type direct current circuit breaker is limited by the turn-off capability of a single fully-controlled device and the problem of relatively low current breaking capability are solved.

The invention discloses a preparation method for a multi-core MgB2 / Fe / Cu superconducting wire. The preparation method comprises the following steps of: 1, preparing precursor powder; 2, filling the precursor powder into a pure iron tube, and placing the pure iron tube into a first oxygen-free copper tube to obtain a tubulated composite; 3, performing rotary forging and drawing treatment on the tubulated composite to obtain single-core wires; 4, placing a copper-niobium composite rod and six single-core wires into a second oxygen-free copper tube, performing secondary assembly to obtain a second composite rod, and performing rotary forging and drawing and grooving rolling treatment on the second composite rod to obtain a multi-core MgB2 / Fe / Cu wire; and 5, sealing the two ends of the wire, placing the sealed wire into a vacuum furnace, and performing vacuum sintering to obtain the multi-core MgB2 / Fe / Cu superconducting wire. The multi-core MgB2 / Fe / Cu superconducting wire has critical current density Jc reaching 1.8*10<4>A / cm<2> under 20 K and 1T, and a requirement for the practicability of the multi-core MgB2 / Fe / Cu superconducting wire is met.

The embodiment of the invention discloses a quasi-isotropic high-current-carrying superconducting cable power-on conductor, which comprises a skeleton, superconductors, metal covering layers, an insulating layer, a shielding layer and a protective shell arranged from inside to outside. The skeleton is a hollow metal skeleton, and an inner cooling channel and an outer cooling channel are formed along the axis of the hollow part of the skeleton. Multiple channel grooves which are longitudinally spiral on the whole are arranged uniformly and at intervals along the circumference of the outer surface of the skeleton. Superconductors are stacked in the channel grooves. The superconductor in each channel groove is covered with a metal covering layer. The insulating layer is wound on the outer surface of the skeleton covered with the metal covering layers. The shielding layer is arranged on the outer surface of the insulating layer. The shielding layer is grounded at a single end or at both ends. The protective shell is arranged outside the shielding layer. According to the embodiment of the invention, the superconductor has good isotropy, large carrying capacity, good fixing effect and good cooling effect.

The invention discloses a method for preparing a yttrium barium copper oxide superconducting film with high critical current density, which comprises the following concrete steps: a, preparing a precursor solution, which is to dissolve yttrium acetate, barium acetate, copper acetate and acetate of an impurity element into propionic acid according to the proportion that the stoichiometric ratio of yttrium: barium: copper: impurity element is 1: 2: 3-X: X (the X is more than or equal to 0.0002 and less than or equal to 0.008) to obtain the precursor solution, and the impurity element is one of Co, Fe, Zn, Ni, and Li; b, adding a polymer material polyvinyl butyral (PVB) into the precursor solution obtained in a step to obtain a coating colloid; c, coating and drying the coating colloid on a substrate to form a film; and d, performing thermal decomposition treatment on the substrate with the film prepared in c step and then imaging thermal treatment to obtain the YBCO superconducting film. The yttrium barium copper oxide superconducting film prepared by the method has high biaxial texture, smooth and compact surface, high critical current density under a magnetic field, low cost, and simple process, and is suitable for mass industrial production.

The vacuum switching chamber has two contact pieces and is provided with at least one heat pipe for dissipating heat. The heat pipe contains a working medium for dissipating the heat by evaporating the working medium in a section, referred to as the evaporator, of the heat pipe and condensing the working medium in a section, referred to as the condenser, of the heat pipe. Advantageously, the evaporator is in close thermal contact with at least one contact piece, and, in particular, at least part of the evaporator is integrated in the first contact piece or the second contact piece. Advantageously, the condenser has a cooling rib arrangement.

The invention discloses a casting manufacturing method of a superconducting NbTi alloy. The casting manufacturing method comprises the following steps of carrying out purification and ingot casting of high-melting point metal Nb to obtain an Nb rod, pressing low-melting point sponge active metal Ti into a semi-cylindrical tile, carrying out assembly welding of the Nb rod and the semi-cylindrical tile in an inert gas protective atmosphere to obtain a consutrode, and carrying out electric arc melting more than twice. The superconducting NbTi alloy obtained by the casting manufacturing method has no impurities, high uniformity, less interstitial elements and good plasticity, and is conducive to manufacture of thin core rods suitable for large-scale application and alloy materials having a high current-carrying capability and a low cost.

The invention relates to an electric connection mechanism which comprises at least one fixed terminal, at least two contact pieces and at least one slotting tool, wherein the fixed terminal is provided with a platy raised part extending forwards, the upper surface and lower surface of the free end of the fixed terminal are contact surfaces, and the free end thereof is provided with a hole or a groove at the left side and the right side respectively; a first contact surface is arranged at the rear end of each contact piece and provided with a hole or a groove, the shape of the first contact surface of each contact piece is matched with that of the contact surface of the fixed terminal, the other end of each contact piece is provided with a second contact surface vertical to the first contact surface, the first contact surfaces of the two contact pieces are pressed on the contact surface of the raised part respectively through elastic components, and the second contact surfaces of the two contact pieces are opposite to each other so as to form a plug-in clamping head; and the slotting tool is plugged in the plug-in clamping head, and the free end of the slotting tool is provided with a contact surface matched with the second contact surfaces of the contact pieces in shape. As for the electric connection mechanism, the contact pieces and the fixed terminal are well contacted all the time, the contact pieces and the slotting tool are maintained to be well contacted, and the error correction capacity is extremely good.