52results about How to "Increase the switching frequency" patented technology

The invention relates to the technical field of inverters, in particular to a three-phase resonance pole type inverter with low switching loss and wide voltage output range. The inverter comprises a DC voltage source module, a Y-type inversion module, an MOSFET control module, a resonance pole type soft switching module and a three-phase load module. According to the utility model, a Y-shaped inverter structure is adopted, so that wide-range voltage output is obtained, and more types of motors can be driven. Besides, a resonance pole type soft switching module is added to the inverter bridge switching part, so that the inverter can significantly reduce switching loss, and the inverter can have good operation efficiency under high switching frequency. Compared with a traditional three-phase resonance direct-current link inverter, the three-phase resonance direct-current link inverter has a wider output voltage range and lower switching loss, electromagnetic interference and noise pollution of the inverter under high switching frequency can be effectively reduced, and the three-phase resonance direct-current link inverter is very wide in application prospect.

The invention relates to the field of active equalization of a series lithium ion battery pack, in particular to an equalization topological structure of a DC-DC multi-winding flyback battery equalization topological unit. Comprising an inversion unit, a multi-winding transformer and M battery equalization topology units. The voltage of the battery pack is used for supplementing electric energy to the under-voltage battery after passing through the converter, so that the aim of equalization is fulfilled. Compared with the existing flyback equalization technology, the switching frequency is improved to ultrahigh frequency of 10MHz, the equalization response speed is greatly improved, and meanwhile, the soft switching technology is adopted, so that the full-control switches are switched on in a zero-voltage manner, and the diodes are switched off in a zero-current manner. Along with the improvement of the switching frequency, the passive device can be reduced into a small-capacity patch package, for example, a planar air-core transformer can be adopted as a transformer, so that the power density is effectively improved. The circuit has the advantages of simple and reliable structure, fast response capability, few passive devices, small circuit loss, strong expansibility and stable output of direct current.

The invention provides a semiconductor power device with a wide safe operation area and a preparation method thereof, and the device comprises a first groove and a second groove which are respectively formed in different areas of an epitaxial layer; a source polysilicon layer is formed at the bottom of the trench, a third isolation layer, a second isolation layer and a first isolation layer are sequentially formed on the outer side of the source polysilicon layer, an isolation oxide layer and a gate polysilicon layer are sequentially formed on the source polysilicon layer, and a gate oxide layer is formed on the outer side of the gate polysilicon layer; the thickness of the first isolation oxide layer is greater than that of the second isolation oxide layer, and the thickness of the first gate oxide layer is greater than that of the second gate oxide layer. The method has the beneficial effects that the isolation oxide layers with different thicknesses are formed in the device active region division regions, so that the gate-drain capacitance is reduced, and the device switching frequency is improved; meanwhile, the gate oxide layer adopts a single layer to realize different thicknesses in different areas, so that the threshold voltages of the cells in different areas are different, and the safe working area of the power device is widened; and a good compromise between the forward conduction capability and the reverse recovery capability is realized.

The invention discloses a gallium oxide crystal microdefect and doping regulation and control system and method, and belongs to the technical field of gallium oxide crystal regulation and control, and the method specifically comprises the following steps: growing a gallium oxide crystal under a specific temperature condition by using a chemical vapor deposition or molecular beam epitaxy method to obtain the gallium oxide crystal, the method comprises the following steps: carrying out mathematical modeling on micro defects of the gallium oxide crystal, analyzing and regulating the micro defects in the gallium oxide crystal, analyzing the doping concentration and distribution in the gallium oxide crystal, regulating the doping in the gallium oxide crystal, and verifying the performance optimization of the regulated gallium oxide crystal. The microdefects such as dislocation and vacancy in the gallium oxide crystal are effectively reduced, accurate regulation and control of the microdefects and electrical properties of the gallium oxide crystal are realized, and the quality and performance based on gallium oxide can be remarkably improved.

The invention discloses a ZCT soft switching DC / DC converter, which comprises a four-switch tube series main power bridge arm circuit, a passive auxiliary resonance circuit, a voltage and current commutation circuit and an isolation rectification filter circuit, and is characterized in that the main power bridge arm circuit is used for transmitting input power energy; the passive auxiliary resonance circuit is used for cooperating with the working mode of the main power bridge arm circuit, eliminating the switching loss of two high-frequency power switch tubes which are auxiliary switch tubes for each other in the main power bridge arm circuit, and achieving zero-current soft switching. The commutation circuit is used for voltage and current phase switching; the isolation rectification filter circuit is used for rectifying the voltage of the primary side so as to output smooth DC voltage. The two high-frequency modulated power switch tubes serve as main and auxiliary switch tubes of output current in different quadrants, zero-current soft switching of the two high-frequency power switch tubes is achieved on the basis that power switch devices are not increased, switching loss is reduced, efficiency is improved, the working frequency of a system is improved, and the system reliability is improved. The size of the output filter is reduced.

The invention discloses a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) integrated with a heterojunction diode, which comprises a drain metal layer, a silicon carbide N-type doped substrate, a silicon carbide N-type epitaxial region and a silicon carbide N-type current expansion layer which are sequentially arranged from bottom to top, and is characterized in that a silicon carbide P-type buried layer is embedded in the middle of the silicon carbide N-type current expansion layer; groove gate oxide layers are arranged at the two ends of the silicon carbide N-type current expansion layer respectively, a silicon carbide P-type shielding layer is arranged at the bottom of each groove gate oxide layer, silicon carbide P-type base regions are arranged at the two ends of the upper side of the silicon carbide N-type current expansion layer respectively, and a silicon carbide N-type source region and a silicon carbide P-type source region are arranged above each silicon carbide P-type base region at the same time. And a heterojunction polycrystalline silicon region is arranged in the center of the top of the silicon carbide N-type current expansion layer. The invention further discloses a manufacturing method of the silicon carbide MOSFET integrated with the heterojunction diode, the device has low reverse turn-on voltage, and the static quality factor and the short circuit reliability of the device are improved.

The invention discloses a self-aligned embedded gate metal IGBT (Insulated Gate Bipolar Translator) and a manufacturing method. The self-aligned embedded gate metal IGBT comprises a semiconductor layer arranged on the front surface of a substrate, a body region and a drift region which are arranged in the semiconductor layer, and a source region arranged in the body region, the pair of first side walls are arranged on the surface of the semiconductor layer above the source region; the trench gate is arranged in the semiconductor layer between the pair of first side walls and penetrates through the source region; the gate metal is embedded between the pair of first side walls and is connected with the trench gate; the source region contact groove is formed in the semiconductor layer on one side of the trench gate; the source region contact metal is filled in the source region contact groove and is connected with the source region; the gate metal and the source region contact metal are respectively connected with the metal interconnection layer through conductive contact holes; the collector region layer and the buffer region layer are arranged below the back surface of the substrate, and the collector layer is arranged on the back surface of the substrate. The invention can accelerate the conduction speed, increase the switching frequency, reduce the number of photomasks, eliminate the overlay error, reduce the device area, reduce the short-circuit resistance and improve the device performance.

The invention discloses an SGT transistor and a manufacturing method thereof, and the method comprises the steps: forming a second oxide layer which is flush with the surface of a substrate on the surface of a gate oxide layer in a trench, removing silicon nitride at two sides of the second oxide layer, and filling the two sides of the second oxide layer with second polysilicon which is lower than the surface of the substrate, the second polycrystalline silicon is of a relatively narrow long-strip-shaped structure, and the parasitic capacitance between the gate and the source is obviously reduced, so that the switching frequency of the device is effectively improved, and the switching loss is reduced.

The utility model discloses a silicon carbide MOSFET device comprising at least one cell, and each cell comprises a silicon carbide substrate of a first doping type; an epitaxial layer of a first doping type; the well regions of the second doping type are located in the epitaxial layer, and JFET regions are arranged between the adjacent well regions; the source region of the first doping type is located in the well region; the contact region of the second doping type is located in the well region and is adjacent to the source region; the field oxide layer is located on the surface of the epitaxial layer and located above the JFET region; the gate oxide layer comprises a first gate oxide layer and a second gate oxide layer, and the first gate oxide layer and the second gate oxide layer are located on the two sides of the field oxide layer respectively and are adjacent to the field oxide layer respectively; the gate conductors comprise a first gate conductor and a second gate conductor, the first gate conductor covers the surface of the first gate oxide layer and part of the surface of the field oxide layer, the second gate oxide layer covers the surface of the second gate oxide layer and part of the surface of the field oxide layer, and the first gate conductor and the second gate conductor are separated from each other.

The present invention discloses an isolated high-frequency dual-active bridge converter based on gallium nitride devices, including: a high-voltage three-phase full-bridge circuit module, a low-voltage three-phase full-bridge circuit module, a three-phase energy transfer inductor, a three-phase high-frequency coaxial transformer and a DSP module; the isolated high-frequency dual-active bridge converter proposed by the present invention has a simple and symmetrical structure, wherein the power electronic switch adopts gallium nitride power devices, so that the switching frequency of the dual-active bridge converter can be increased to the range of 100kHz-1MHz, and the three-phase high-frequency coaxial transformer adopts a coaxial structure, which reduces the volume and weight of passive components, reduces electromagnetic interference, improves the power density of the converter, can transmit electric energy bidirectionally and can quickly switch the transmission direction. The embodiment of the present invention can provide high-frequency switching frequency and high power density in applications with strict restrictions on volume and weight, and solve the technical problems of relatively low switching frequency and large volume and weight of traditional dual-active bridge converters in the prior art.

The invention discloses a multi-standard power supply system and method for a locomotive test, and relates to the technical field of test power supplies, and the structural design of the system is as follows: an input power supply is a three-phase alternating current 10kV power supply; the high-voltage switch K realizes access control and isolation of the system and a public power grid, the connection reactor L realizes energy buffering and inhibits switch ripples in output current, and the soft charging circuit pre-charges the three-stage converter. The three-level converter converts three-phase alternating current 10kV into DC1500 / 750V and outputs the DC1500 / 750V to the direct-current bus, one path of the direct-current bus supplies power to a subway vehicle test line, and the other path of the direct-current bus is inverted into single-phase alternating current 25kV through the output inverter and supplies power to a railway locomotive test line. According to the invention, alternating current test conditions of railway electric traction locomotive vehicles and direct current test conditions of subway vehicles can be satisfied, reliability and quality of power supply are ensured, repeated construction is reduced, and resource waste is avoided.

The invention discloses a hybrid control method and system for an interleaved flyback photovoltaic micro inverter. The method comprises the following steps: S1, acquiring a real-time photovoltaic panel voltage, a power grid voltage effective value, a power grid phase and the average output power of the inverter; s2, calculating a gain factor based on the voltage of the photovoltaic panel and the phase of the power grid; s3, according to the gain factor, the network voltage effective value, the transformer excitation inductance, the average output power and the transformer turn ratio, the duty ratio and the switching frequency under the BCM are calculated; s4, comparing the switching frequency with a preset limiting frequency of a BCM mode and a preset fixed working frequency of a DCM mode, and selecting a working mode according to a comparison result; and S5, generating a corresponding control signal according to the working mode, wherein the control signal is used for driving a flyback switching tube and a power frequency flip circuit switching tube. The method has the advantages of reducing the calculation burden of mode switching and the like.

The invention provides a PWM wave optimization method and system based on VIENNA rectifier single-period control. The PWM wave optimization method comprises the steps that three-phase input current is sampled; determining the position of the corresponding PWM wave high level in the switching period according to the current direction of each phase; the method specifically comprises the following steps: for each PWM output channel, according to a phase current symbol associated with the PWM output channel, selecting to place a high level at two ends or in the middle of a switching period; and based on the determined PWM high level position and the calculated duty ratio, generating and outputting a PWM driving signal used for controlling a VIENNA rectifier switch tube. According to the method, PWM generation logic is redesigned, a non-optimal voltage vector combination used in traditional synthesis is abandoned, and three vectors (namely vectors corresponding to three vertexes of a small triangle where a target vector is located) closest to the target voltage vector are adopted for synthesis; according to the optimization, on the premise that the switching frequency is not increased and extra hardware cost is not increased, output current harmonics are remarkably reduced.

The application discloses a gallium nitride soft switch high-voltage Buck voltage converter and belongs to the technical field of switching power supplies. The auxiliary soft switch link is introduced, the problem of large switching loss, high thermal stress, large voltage peak and high-frequency oscillation caused by the switching capacitor link in the traditional high-voltage Buck switching capacitor voltage converter is solved, the efficiency and reliability of the system are improved, further, the double-phase staggered parallel structure is introduced, the current output capacity of the power supply is improved, the application in a higher power scene can be realized, meanwhile, the gallium nitride transistor is adopted, compared with the traditional scheme, the switching frequency is improved, the passive element size is reduced, the PCB integration is improved, the system parasitic parameters are reduced, the dead time and duty cycle loss are reduced, and the system efficiency and power density are further improved.

The invention discloses a peak current control circuit and method without power tube current sampling, and belongs to the field of power converter control, and the peak current control circuit comprises a driving signal generation circuit, an inductive current detection circuit, a sampling hold circuit, a differential voltage detection circuit and a voltage-current conversion circuit. The differential voltage detection circuit realizes difference detection of an input voltage Vin and an output voltage Vout, the voltage-current conversion circuit realizes linear conversion from a voltage value to a current value, the sampling hold circuit realizes periodic sampling of an inductive current average value, and the inductive current detection circuit realizes detection of the inductive current average value. The driving signal generation circuit realizes generation of PWM waves. According to the invention, the difficulty of current sampling can be reduced, the sampling loss can be reduced by flexibly using the low-resistance sampling resistor, the space occupation of the power converter is reduced, and the power density of the converter, the switching frequency and the isolation voltage level of the converter can be improved.

The imaging method based on a large-capacity spatial multiplexing metasurface disclosed in the present invention relates to a single-pixel imaging method based on a large-capacity spatial multiplexing metasurface, and belongs to the field of micro-nano optics and single-pixel imaging application technology. The implementation method of the present invention is: using a metasurface with a randomly distributed nanopore structure as a mask in a single-pixel imaging system, it is possible to achieve fast and high-resolution imaging without polarization selection, and its working range can be from the entire visible light to the near-infrared band; by switching the mask pattern by moving the metasurface, it is possible to achieve spatial multiplexing, obtain more mask patterns in a limited spatial area, and improve the information capacity of the metasurface. The present invention can achieve fast and high-resolution single-pixel imaging from the visible light to the near-infrared band. The single-pixel imaging system based on the metasurface is small in size and simple in optical path, which can make the imaging system more compact and integrated, and broaden the application range of the single-pixel imaging system.

The utility model discloses a continuous low power frequency modulation control circuit and induction cooker, including power supply modulation module, electromagnetic coil, switch drive module, zero crossing detection module, switch tube temperature detection module and control module, switch drive module only includes one switch tube I GBT1, switch tube I GBT1 is connected with the electromagnetic coil, zero crossing detection module is connected with the electromagnetic coil, switch tube temperature detection module is connected with the control module, and the control module is connected with the switch tube I GBT1. The zero-cross detection module is connected with the power supply modulation module to detect a zero-cross signal, the switch tube temperature detection module is used for detecting a first temperature signal of the switch tube I GBT1, and the control module is connected with the zero-cross detection module, the switch tube temperature detection module and a controlled end of the switch tube I GBT1. The control module at least can control the switching tube I GBT1 to operate in a first switching mode or a second switching mode, the first switching frequency is greater than the second switching frequency, and the design realizes high-switching-frequency continuous low-power operation and improves the heating effect under the condition of ensuring stable operation of the switching tubes.

The invention discloses a self-aligned embedded gate metal MOSFET and a manufacturing method, the self-aligned embedded gate metal MOSFET comprises a semiconductor layer arranged on a substrate, a body region and a drift region are sequentially arranged in the semiconductor layer from the surface to the substrate, and a source region located below the surface of the semiconductor layer is arranged in the body region; the pair of first side walls are arranged on the surface of the semiconductor layer above the source region; the trench gate is arranged in the semiconductor layer between the pair of first side walls and penetrates through the source region; the gate metal is embedded between the pair of first side walls and is connected with the trench gate; the source region contact groove is formed in the semiconductor layer on one side of the trench gate; the source region contact metal is filled in the source region contact groove and is connected with the source region; and the gate metal and the source region contact metal are respectively connected with the metal interconnection layer through the conductive contact holes. According to the invention, the conduction speed can be accelerated, the switching frequency can be increased, the area of the device can be reduced, the short-circuit resistance can be reduced and the performance of the device can be improved while the photomasks are reduced and the overlay error is eliminated.

The invention provides a capacitor bootstrap direct-current transformer which comprises a primary side capacitor bootstrap half-bridge circuit, a secondary side capacitor bootstrap half-bridge circuit, an alternating-current inductor La and a high-frequency transformer, the primary side capacitor bootstrap half-bridge circuit comprises a bootstrap capacitor Cp, a switching device Sp1 and a switching device Sp2, and the secondary side capacitor bootstrap half-bridge circuit comprises a bootstrap capacitor Cs, a switching device Ss1 and a switching device Ss2. According to the capacitance bootstrap type direct-current transformer, the square wave inverter circuit and the square wave rectifying circuit which are of a capacitance bootstrap half-bridge structure are adopted, compared with the scheme of adopting a full-bridge circuit, the number of switching devices of the direct-current transformer is reduced by half, the number of needed active elements is reduced, the topology integration degree is effectively improved, and the cost is reduced. The improvement of the power density of the direct-current transformer and the reduction of the cost are promoted, and the power transmission performance is consistent with that of a full-bridge circuit scheme.

The embodiment of the invention discloses an optocoupler isolation circuit. The optocoupler isolation circuit comprises an optocoupler, a first resistor-capacitor module, a first switch module, a diode module, a second resistor-capacitor module and a second switch module. The first input end of the optocoupler is electrically connected with the first end of the first resistance-capacitance module, and the second end of the first resistance-capacitance module is electrically connected with the first power supply; the first end of the first switch module is electrically connected with the first output end of the optocoupler, and the control end of the first switch module serves as the input end of the optocoupler isolation circuit. The first end of the second resistor-capacitor module is electrically connected with the second input end of the optocoupler, the second end of the second resistor-capacitor module is electrically connected with the control end of the second switch module, the first end of the second switch module is electrically connected with the second power supply, and the second end of the second switch module serves as the output end of the optocoupler isolation circuit. According to the optocoupler isolation circuit provided by the embodiment of the invention, the switching frequency of the optocoupler can be improved.

The present invention provides a two-level driving device based on a real-time simulation controller, comprising: a processing board, a conditioning circuit is provided on the processing board, and the conditioning circuit is used to condition the input pulse width modulation signal; and a driving board, the driving board is connected to the processing board, and a driving module and a power module are provided on the driving board, the driving module is used to boost the pulse width modulation signal after the conditioning process, and the power module is used to invert the pulse width modulation signal after the boost process and generate a variable current signal and / or a variable voltage signal; wherein the maximum driving current of the driving module is 2.5A; and the maximum switching frequency of the power module is 20 KHZ. The two-level driving device based on the real-time simulation controller of the present invention has a simple structure, a high switching frequency and a high driving current, and based on the real-time simulation controller, the user can perform secondary development, which can solve the problem that the existing driver does not meet the technical requirements.

The invention discloses a three-phase resonant soft switching PFC power topological structure, which comprises a first MOS tube, a second MOS tube, an input inductor assembly, a three-phase rectifier bridge, a resonant capacitor Cp, an output capacitor Co, a load and a control unit, and is characterized in that the control unit comprises a PI controller, a voltage-controlled oscillator, a driving circuit and an output voltage Vo sampling unit used for collecting the output voltage of a three-phase input power supply, the output voltage Vo passes through the PI controller, the voltage-controlled oscillator and the driving circuit to form a control signal to control the on and off of the first MOS tube and the second MOS tube; according to the invention, soft switching can be realized, the switching frequency of the converter is improved, the switching loss of the converter and the volume and weight of a magnetic element are reduced, a three-phase PFC control technology is adopted, the three-phase input current is input to track the three-phase input voltage, the switching frequency of the converter is improved, and the power factor and the change efficiency of the converter are improved.

The invention relates to a method for preparing a GaN power device based on magnetron sputtering deposition, and belongs to the field of microelectronics, and the method comprises the steps: sequentially growing an AlN nucleating layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer on a substrate; etching the GaN cap layer, growing a source electrode and a drain electrode on an etching area, and annealing the source electrode and the drain electrode; putting the device into direct-current magnetron sputtering equipment, and growing a gate dielectric layer and a gate electrode metal material at the same time; and taking out the device, covering photoresist above a gate electrode region, etching a gate electrode metal material outside the gate electrode region to form a gate electrode, and growing a passivation layer in an etching region to obtain the GaN power device. According to the invention, the deposition of the combination of the gate dielectric layer and the gate electrode metal material is realized in the same chamber, the potential pollution risk in the process steps can be effectively reduced, the interface performance of the device is improved, the preparation efficiency can be improved, and the production cost is reduced.

The present invention relates to a single-cylinder rotor pump with a rotating one-way valve, comprising: a single-cylinder rotor pump, a transmission mechanism, a first one-way valve, a second one-way valve, a third one-way valve, a fourth one-way valve and a first valve core; the first one-way valve, the second one-way valve, the third one-way valve and the fourth one-way valve are connected to a pump body of the single-cylinder rotor pump; the transmission mechanism connects the single-cylinder rotor pump and the first one-way valve, the second one-way valve, the third one-way valve and the fourth one-way valve; when working, the power of the single-cylinder rotor pump is transmitted to the valve core of the one-way valve through the transmission mechanism, so that the synchronization of the rotation of the valve core and the eccentric shaft of the single-cylinder rotor pump is achieved, the closing timeliness of the one-way valve is guaranteed, there is no time lag phenomenon, and the problem of untimely opening and closing of ordinary one-way valves due to excessively high frequency is effectively avoided, and the structure is simple and the volume is compact.

This invention discloses a control method, control device, and switching power supply. The control method employs a variable frequency SVPWM modulation strategy, comprising the following steps: calculating the SVPWM modulation wave for controlling the on / off state of each phase bridge arm switch when the electrical parameters output by the N-phase converter reach the desired value through a dual closed-loop control of the voltage outer loop and current inner loop; calculating the frequency required for each phase bridge arm switch to achieve ZVS by predicting the magnitude of the current ripple of the second filter inductor in each phase, comparing the frequencies of each phase, and selecting the minimum frequency among the N phases as the frequency of the triangular carrier wave; using the calculated frequency to generate a shared triangular carrier wave; and comparing the SVPWM modulation wave of each phase bridge arm switch with the shared triangular carrier wave to obtain a PWM drive signal for controlling the on / off state of each phase bridge arm switch. This invention enables soft switching of each sector through variable frequency, eliminating the need for clamping each phase.

The present invention relates to a millimeter wave switchable MIMO antenna unit, comprising a top layer, a first metal layer, a second metal layer, a third metal layer, a fourth metal layer and a bottom layer arranged in sequence from top to bottom, and also having through holes penetrating the six metal layers and four blind holes; the top layer contains 11 radio frequency switching chip patches, adopts a three-layer multiplexing structure, the first metal layer is a ground layer, the second metal layer is a control signal layer, the third metal layer is a power layer, and the fourth metal layer is a ground layer. A millimeter wave switchable MIMO antenna array comprises antenna units as above arranged in a 1×32 linear array, the polarization mode adopts vertical polarization, and the center frequency is 38.5GHZ. Compared with the prior art, the present invention has the advantages of small coupling, high reliability, clear and compact structure, high switching frequency, low cost, and can fit actual large-scale antenna base stations.

The application discloses a GaN HEMT device integrated with a reverse conduction function and a preparation method thereof, and belongs to the technical field of semiconductor devices. The device comprises a substrate and a buffer layer, a first channel layer, a first barrier layer, an isolation layer, a second channel layer, a second barrier layer and a p-GaN layer which are sequentially stacked; wherein a first recess is formed in the second barrier layer and penetrates to the first channel layer, the bottom of the recess is provided with an anode which forms a Schottky contact with the first channel layer, and a source electrode covers the anode and the first recess; a second recess is formed and penetrates to the first barrier layer, and a cathode which forms an ohmic contact with the first barrier layer is arranged in the recess. The application integrates an independent reverse conduction diode channel in the GaN HEMT device by constructing a double heterojunction structure and a specific recess electrode design, realizes single-chip integration of forward switching and reverse current flow, effectively reduces a reverse conduction voltage drop, eliminates parasitic parameters of an externally-mounted diode, and significantly improves the power density and reliability of a system.

The present invention provides a multi-output mode single-phase photovoltaic inverter and a control method for adaptive lighting conditions, and relates to the technical field of photovoltaic power generation. The photovoltaic inverter includes a DC / DC conversion unit and a DC / AC conversion unit; the DC / DC conversion unit includes an input capacitor, a three-phase LLC topology, a high-frequency transformer, a bridge rectifier topology and an output capacitor, and the DC / DC conversion unit has a strong light operation mode and a weak light operation mode, and high-efficiency electric energy conversion can be achieved under all lighting conditions; the DC / AC conversion unit includes a full-bridge inverter topology and a grid-connected inductor; the control method is divided into a normal output mode and a reactive output mode. In the normal output mode, the photovoltaic inverter realizes the maximum output of active power and the on-demand optimized output of reactive power. In the reactive output mode, the reactive support capacity of the photovoltaic inverter is improved first, and the active power is output according to the real-time residual capacity under the premise of ensuring low voltage ride-through, so as to realize the high utilization rate of the photovoltaic inverter capacity.

This application discloses a motor drive control method, apparatus, device, storage medium, and product, relating to the field of motor control technology. The disclosed motor drive control method includes: acquiring current motor parameters of a target vehicle under current operating conditions, wherein the motor parameters include an electrical frequency; if the electromagnetic force fluctuation frequency generated by the current harmonic frequency corresponding to the electrical frequency is within the resonant frequency range of the target vehicle, determining a target synchronous modulation scheme corresponding to the electrical frequency from a preset set of synchronous modulation schemes; and controlling the drive circuit of the target vehicle based on the target synchronous modulation scheme. This application uses a flexible synchronous modulation scheme instead of an asynchronous modulation method to avoid increasing the switching frequency, thereby reducing the losses in the new energy vehicle motor drive system.

The utility model provides a converter based on a SiC / Si hybrid ANPC circuit. The converter comprises two same traction converter circuits; the traction converter circuit comprises a rectifier module, an inverter module and two support capacitor branches; both the rectifier module and the inverter module adopt an ANPC three-level circuit structure formed by mixing a SiC device and a Si IGBT device; the M nodes of the two traction converter circuits are communicated, and the N nodes of the two traction converter circuits are also communicated. According to the utility model, the three-level circuit is adopted, so that the withstand voltage values of semiconductor switch tubes such as Si IGBT devices and SiC devices can be reduced by half, and therefore, the voltage level of the converter can be further improved to output higher power, and higher power density can be obtained under the condition that the size of the converter is not changed.