The invention belongs to the technical field of
power electronics, and relates to a SiC device five-level split
inverter pulse rejection modulation method and
system, and the method comprises the steps: generating two groups of reverse laminated carriers according to a set reference
signal, generating two different carrier signals according to the sizes of the two groups of reverse laminated carriers and a set modulation wave, and outputting the two different carrier signals. Two auxiliary modulation
waves are generated according to the actual
voltage of the floating
capacitor, the expected
lower limit threshold value and the expected upper limit threshold value, a low-frequency driving
signal is generated according to the size of the set modulation
waves, and a high-frequency driving
signal of each phase is generated according to the size of the output current of each phase, the auxiliary modulation
waves and the
carrier signal. A high-frequency driving signal is generated only in a half fundamental
wave period, and a low-frequency driving signal is generated in the other half period, so that the loss of the
driving circuit is effectively reduced, dead-zone time does not need to be added between the high-frequency driving signals, the dead-zone effect is avoided from the source, the current output
harmonic wave is reduced, the current
distortion is reduced, and the output current quality is improved; and the
voltage balance of the suspension
capacitor is kept through the adjusting effect of the auxiliary modulating wave.