The invention provides a three-phase low-
voltage MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor) packaging integrated
power module. A driving
assembly, a direct-current
bus capacitor and other modules are integrated in an aluminum shell
package. The three
DBC substrates respectively bear U-phase bridge arms, V-phase bridge arms and W-phase bridge arms, an upper bridge arm and a lower bridge arm of each phase are formed by a plurality of parallel
MOSFET chips, drain electrodes of the chips are directly welded to a
DBC upper
copper layer, grid electrodes of the chips are connected with an upper-layer
driving circuit board through
copper columns, source electrodes of the chips are led out to a direct-current input terminal or an alternating-current output terminal through bonding wires, and a double-layer conductive structure is formed. A plurality of direct-current
bus capacitors which are arranged above the aluminum shell in parallel are adjacently coupled with the
DBC substrate, so that low-impedance energy buffering is realized; the
alternating current output terminal is sleeved on the
current sensor, detects the phase current and outputs the phase current through the
signal terminal; and a
thermistor is mounted on a
copper layer on each DBC to monitor the
junction temperature of the
chip and provide over-temperature protection. The direct-current input terminal, the alternating-current output terminal, the power terminal and the
signal terminal are integrally embedded in the aluminum shell and are directly butted with an external
busbar and a controller, and additional sampling and driving boards are not needed.