3results about How to "Suppression voltage" patented technology

The invention relates to the technical field of power electronic direct-current converters, in particular to an input and output common-ground high-gain boost converter which comprises a direct-current voltage source Vin, diode components D0-D4, capacitor components C0-C4, a first coupling inductor L1, a second coupling inductor L2, a first mosfet tube S1, a second mosfet tube S2 and a resistor R. The two main loops operate in a staggered mode, so that input current is continuous, input current ripples are small, relatively stable energy is continuously provided for the circuit, the voltage multiplication unit is adopted, the amplification factor of the circuit is increased, the duty ratio of the mosfet tubes S1 and S2 is adjusted, and small current ripples can be kept even under the condition that the boost factor is large. The device has the advantages of high step-up ratio, low device stress, high efficiency, easiness in control and implementation, lower cost and the like, and is suitable for a new energy power generation scene needing high direct current bus voltage grid-connected output under a low input voltage condition.

The application relates to the technical field of semiconductor bridge electrostatic discharge protection and current protection, and discloses an electrostatic discharge and current protection circuit of a semiconductor bridge, which comprises an ESD protection circuit, a current protection circuit and an NMOS connected in parallel, the ESD protection circuit comprises a bidirectional transient suppression diode and a capacitor connected in parallel, the bidirectional transient suppression diode clamps a transient high voltage by breakdown conduction, the voltage is limited in a safe range, the capacitor reduces a voltage rising rate and suppresses overshoot by shunting and absorbing a transient current, the NMOS provides a low-resistance discharge path, and the voltage and current impact applied to the semiconductor bridge are reduced; the current protection circuit comprises a bidirectional rectifier circuit and a detection circuit; and the NMOS is connected between the detection circuits. The application can realize ESD protection and current protection of the semiconductor bridge, prevents current from damaging the structure, and guarantees the safety of the semiconductor bridge working in an electromagnetic and ESD environment.

A nitride-based semiconductor device and its manufacturing method are disclosed. The nitride-based semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a transistor, a first diode, and a second diode. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer, and the band gap of the second nitride semiconductor layer is larger than that of the first nitride semiconductor layer. The transistor is disposed on the second nitride semiconductor layer. The first diode is disposed on the second nitride semiconductor layer, and the cathode of the first diode is connected to the gate of the transistor. The second diode is disposed on the second nitride semiconductor layer, and the cathode of the second diode is connected to the drain of the transistor, and the anode of the first diode is connected to the anode of the second diode, wherein the breakdown voltage of the second diode is less than the breakdown voltage of the transistor.