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270results about How to "Potential difference" patented technology

Nonvolatile semiconductor memory circuit utilizing a mis transistor as a memory cell

A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source / drain node, and a second source / drain node, the first source / drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source / drain node of the MIS transistor in a first operation such that a lingering change is created in transistor characteristics of the MIS transistor in response to the data stored in the latch, wherein the MIS transistor includes a highly-doped substrate layer, a lightly-doped substrate layer disposed on the highly-doped substrate layer, diffusion regions formed in the lightly-doped substrate layer, a gate electrode, sidewalls, and an insulating film.
Owner:NSCORE

Method for amplifying abnormal pattern signal in observed brain activity of a subject for diagnosis or treatment

ActiveUS8538512B1Stop and abate seizureImprove detection accuracyElectroencephalographyElectrotherapySeizure detectionClinical scenario
The present invention relates to a brain dysfunction and seizure detector monitor and system, and a method of detecting brain dysfunction and / or seizure of a subject. The various embodiments of the system of the present invention were developed for the brain activity and preferably EEG monitoring of a single patient or multiple patients. Preferably, the system or monitor of the present invention also includes one or more seizure detection algorithms. The analysis method is specifically optimized to amplify abnormal brain activity and minimize normal background activity. This analysis yields a seizure index whose value is directly related to the current presence of ictal activity in the signal. In addition, a seizure probability index based on historical values of the aforementioned seizure index, is derived for diagnostic purposes. The seizure probability index quantifies the probability that the patient has exhibited abnormal brain activity since the beginning of the recording. The real-time seizure index, and the historical seizure probability index, can be used in the context of an emergency and / or clinical situation to assess the status and well being of a patient's brain, or can be used to automatically administer treatment to stop the seizure before clinical signs appear.
Owner:NEUROWAVE SYST

Inductively-coupled torodial plasma source

Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding. The first AC current and the second AC current induce a combined AC potential inside the plasma chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and that dissociates the gas.
Owner:MKS INSTR INC

Display apparatus

A display apparatus comprises a display, a transparent conductive film having a plurality of stimulation electrodes, an insensitive electrode electrically isolated from the stimulation electrodes and maintained at a constant potential, and a voltage applying device for establishing a potential difference between each stimulant electrode and the insensitive electrode. When the transparent conductive film is given a touch, the voltage applying device causes a state in which the potential of the stimulation electrodes is higher than that of the insensitive electrode, plural times intermittently or once in a predetermined period immediately after the touch, and varies the potential of the stimulation electrodes with time so as to intermittently cause a state in which the potential of the insensitive electrode is higher than that of the stimulation electrodes, in a predetermined pulse width and at a predetermined frequency during a continuing period of the touch thereafter.
Owner:NTT DOCOMO INC

System and method for providing power to an electronic device

An electronic system includes a power delivery support structure having a power delivery surface with first and second conductive regions. An electronic device includes a plurality of contacts arranged so at least one of them engages the first conductive region and at least another of them engages the second conductive region independently of the orientation of the device relative to the power delivery surface.
Owner:FLI CHARGE LLC

Image sensor, camera, surveillance system, and method for driving the image sensor

Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods.
Owner:SEMICON ENERGY LAB CO LTD

Liquid Crystal Display Device and Electronic Device Including the Same

A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.
Owner:SEMICON ENERGY LAB CO LTD

Charging member, process cartridge and electrophotographic apparatus

A charging member is provided which can uniformly charge a photosensitive member without requiring any pre-exposure means in a low-, medium- or high-speed electrophotographic apparatus, and has a sufficient charging performance. An electrophotographic apparatus and a process cartridge are also provided which can keep multi-color ghost images from occurring and can form high-grade electrophotographic images stably. The charging member has a substrate, an elastic layer and a surface layer, which surface layer contains a high-molecular compound having an Si—O—Nb linkage; the high-molecular compound having a constitutional unit represented by the following formula (1) and a constitutional unit represented by the following formula (2).
Owner:CANON KK

Method and apparatus for processing metal bearing gases

A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.
Owner:MKS INSTR INC

Inductively-coupled toroidal plasma source

Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding. The first AC current and the second AC current induce a combined AC potential inside the plasma chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and that dissociates the gas.
Owner:MKS INSTR INC

Protection circuit

In a protection circuit for protecting semiconductor integrated circuit devices from an electrostatic breakdown or a latch-up due to an external surge, etc, a drain terminal of a PMOS transistor MP1, having a source terminal connected to a power supply VDD and a gate terminal receiving a control signal VG1 which a control circuit 2 generates on the basis of a power supply GND, is connected to one end of a resistor R1, having the other end connected to the power supply GND, and to a gate terminal of an NMOS transistor MN1 having a drain terminal and a source terminal connected to the power supply VDD and the power supply GND, respectively, and outputs an internal signal VG2 to the gate terminal of the NMOS transistor. When a predetermined voltage or more is applied to the power supply, the power supply is short-circuited.
Owner:HITACHI LTD

Semiconductor integrated circuit

Data breakdown due to fluctuation of an operation power source is suppressed by suppressing a sub-threshold leakage current. A semiconductor integrated circuit includes a pair of power source wires, a plurality of static memory cells, a voltage control circuit for controlling an operation voltage applied from the power source wires to the static memory cells, a monitor circuit for monitoring a voltage of the power source wires and a mode control circuit for controlling a plurality of operation modes. The monitor circuit can detect a change of decrease of a potential difference between the pair of power source wires. The voltage control circuit can execute control in such a manner as to reduce the potential difference of a pair of power source nodes of the static memory cell in response to indication of the low power consumption mode by the mode control circuit and can execute control in such a manner as to increase the potential difference of the pair of power source nodes of the static memory cell in response to detection of the decrease of the potential difference between the pair of power source wires by the monitor circuit.
Owner:RENESAS ELECTRONICS CORP

Plasma display device and method for driving the same

When a discharge start voltage takes a normal value under the normal temperature, priming discharge starts at a time t1. In this case, at a time t3 that is later than the time t1 by a predetermined time t, a sustain driver control signal Ssud2 is raised to put a sustain electrode into the floating state to stop the priming discharge. When the discharge start voltage takes a higher value than usual under the high temperature, the priming discharge starts at a time t2. In this case, at a time t4 that is later than the time t2 by the predetermined time t, the sustain driver control signal Ssud2 is lowered to put the sustain electrode into the floating state to stop the priming discharge. With such a configuration, provided is a plasma display device capable of implementing excellent and stable display quality while maintaining constant, even if a discharge start voltage varies, the charge state in display cells after a priming period, and a drive method for such a plasma display device.
Owner:PANASONIC CORP

Voltage converting circuit and battery device

A voltage converting circuit and a battery device, aimed at the problem that the breakdown voltage required for the driving input of the selected switch element is increased as the potential of the selected power storage device is increased when a power storage device is selected from a plurality of power storage devices that are connected in series. A certain drive voltage for turning on p-type MOS transistors Q3, Q4 of selection circuit 121 is generated based on a certain drive current Ion flowing from one power storage element to ground level GND. In other words, even if the power storage device selected by selection circuit 121 has a high potential with respect to ground level GND, the drive voltage applied between the gate and source of MOS transistors Q3, Q4 can be held substantially constant.
Owner:TEXAS INSTR INC

Semiconductor device

ActiveUS20050167694A1Suppress deterioration of breakdown voltageHigh degreeTransistorThyristorEngineeringSemiconductor
In a peripheral portion of an IGBT chip, an intermediate potential electrode (20) is provided between a field plate (14) and a field plate (15) on a field oxide film (13), to surround an IGBT cell. The intermediate potential electrode (20) is supplied with a prescribed intermediate potential between the potentials at an emitter electrode (10) and a channel stopper electrode (12) from intermediate potential applying means that is formed locally in a partial region on the chip peripheral portion.
Owner:MITSUBISHI ELECTRIC CORP

Semiconductor integrated circuit device

An inventive semiconductor integrated circuit device includes: an external connection terminal; an electrostatic discharge protection circuit; an output circuit; an output prebuffer circuit; an input prebuffer circuit; an internal circuit; an inter-power supply electrostatic discharge protection circuit; and a substrate potential control circuit. The substrate potential control circuit includes a capacitor and a resistor. The inter-power supply electrostatic discharge protection circuit includes an NMIS transistor. When a positive surge is applied to the external connection terminal, the substrate potential of the NMIS transistor is also increased. Thus, the NMIS transistor is turned ON, and the positive electrical charge supplied to the external connection terminal is discharged toward a ground line.
Owner:PANNOVA SEMIC

Noise supression circuit

A noise suppressing circuit comprises: windings (W11, W12) inserted to conductor lines (3, 4) at respective points (P11a, P11b) and coupled to each other through a magnetic core (11); a winding (W13) coupled to the windings (W11, W12) through the core (11); capacitors (12, 13) having ends connected to the conductor lines (3, 4) at respective points (P12a, P12b) and the other ends connected to an end of the winding (W13); and windings (W14, W15) inserted to conductor lines (3, 4) at respective points (P13a, P13b) and coupled to each other through a magnetic core (14). These components reduce common mode noise. Capacitors (16, 17) reduce normal mode noise in cooperation with leakage inductances produced by the windings (W14, W15).
Owner:TDK CORPARATION

Drive circuit for switching element

A drive circuit for a switching element includes a constant-current control unit and a restriction unit. The constant-current control unit performs a constant-current control for charging an open / close control terminal of a switching element to be driven which is a voltage-controlled switching element with electric charge for turning on the switching element. The restriction unit restricts, to a reference voltage, a voltage between the open / close control terminal and a first end of a pair of ends of a current flow path of the switching element for a predetermined period following a start of the constant-current control within a charging process period during which the open / close control terminal is charged with the electric charge such that the switching element is turned on.
Owner:DENSO CORP

On-board power supply apparatus

A power supply apparatus configures an on-board power supply system that includes a first battery and a second battery. A first module and a first detecting unit are electrically connected to the first battery as a first electrical load. A second module and a second detecting unit are electrically connected to the second battery as a second electrical load. The first module and the second module configure an electric power steering apparatus. A starter is electrically connected to the first battery. The first battery and the second battery are electrically connected by a connection path. A resistor unit is provided on the connection path.
Owner:DENSO CORP

Electric motor and electric device provided therewith

Provided is an electric motor driven by an inverter of PWM method, and devised to retard electrolytic corrosion in a bearing. A rotating body of a rotor comprises an outer iron core configuring an outer peripheral portion of the rotating body, an inner iron core configuring an inner peripheral portion connected to a shaft, a dielectric layer disposed between the outer iron core and the inner iron core, a plurality of insertion holes penetrating the outer iron core in the axial direction, and permanent magnets inserted individually in the plurality of insertion holes. It thus becomes possible to increase impedance of the rotor side (inner ring side of bearing) to approximate it to impedance of the stator side (outer ring side of the bearing) to thereby bring high frequency potentials balanced between the inner ring side and the outer ring side of the bearing, so as to provide the electric motor that retards electrolytic corrosion liable to occur in the bearing, and an electric device equipped with the same.
Owner:PANASONIC CORP

Image display device

A image display device includes a driving unit that includes a first terminal and a second terminal, and controls current flowing through a light emitting unit based on a potential difference applied between the first terminal and the second terminal. The potential difference is higher than a predetermined drive threshold. The image display device also includes a threshold potential detecting unit that detects the potential difference; a luminance potential supplying unit that changes the potential difference to a value lower than the drive threshold by a luminance potential corresponding to a luminance of the light emitting unit; and a sweep potential supplying unit that controls the driving unit by supplying a sweep potential to the first terminal. The sweep potential is swept in a range between a value lower than the luminance potential and a value higher than the luminance potential.
Owner:INNOLUX CORP

Sacrificial anode and treatment of concrete

ActiveUS20100147703A1Useful levelIncrease resistanceElectricityPower flow
A method of protecting steel in concrete is disclosed. A voltage between two connections of a power supply is generated such that current can flow between a negative connection and a positive connection. In a first protection step, one of the connections of the power supply is electrically connected to the steel to be cathodically protected and a sacrificial anode is electrically connected in series with the other connection of the power supply such that the voltage generated by the power supply is added to the voltage generated between the sacrificial anode and the steel to produce a voltage greater than the voltage generated between the sacrificial anode and the steel alone. The power supply may be a cell or battery and may be combined with the sacrificial anode to form a single unit. In a second protection step that may follow the first protection step, the voltage generated by the power supply is no longer present and a current flows between the sacrificial anode and the steel to continue protecting and / or passivating the steel. This may be achieved by connecting the sacrificial anode directly to the steel.
Owner:GLASS GARETH KEVIN +2

Method for reading NAND flash memory device using self-boosting

A method for reading a NAND flash memory device is provided. The NAND flash memory device includes a first bit line that is selected and a second bit line that is not selected. Each bit line is connected to a cell string including a string selection transistor, a plurality of memory cell transistors, and a source selection transistor connected in series. In the method, first, the first bit line is precharged while power supply voltage is applied to the second bit line. The string selection transistors are turned on and a read voltage is applied to a selected memory cell while a pass voltage is applied to unselected memory cells. The state of the selected memory cell transistor is detected according to whether or not charge precharged on the first bit line has been discharged.
Owner:SK HYNIX INC

Organic material with a region including a guest material and organic electronic devices incorporating the same

Organic electronic devices may include an organic electronic component having an organic layer including guest material(s). One or more liquid compositions may be placed over a substantially solid organic layer. Each liquid composition can include guest material(s) and liquid medium (media). The liquid medium (media) may interact with the organic layer to form a solution, dispersion, emulsion, or suspension. The viscosity of the resulting solution, dispersion, emulsion, or suspension can be higher than the liquid composition to keep lateral migration of the guest material to a relatively low level. Still, most, if not all, the guest material(s) can migrate into the organic layer to locally change the electronic or electro-radiative characteristics of a region within the organic layer, with less than one order of magnitude difference in guest material concentration throughout the thickness of the organic layer. The process can be used for organic active layers, filter layers, and combinations thereof.
Owner:EI DU PONT DE NEMOURS & CO

Motor and electrical appliance provided with same

An electric motor includes a stator that has a stator winding wound on a stator iron core; a rotor having a rotating body with a rotating shaft in the center; a bearing for journaling the rotating shaft; and two conductive brackets for fixing the bearing. The rotating body holds a magnet such that the magnet faces the stator, and is fastened to the rotating shaft penetrating through the center of the rotating body. In the rotating body, a dielectric layer is formed between the rotating shaft and the outer circumference of the rotating body. The dielectric layer has a polygonal shape with the rotating shaft in the center. An electric device includes the thus configured electric motor.
Owner:PANASONIC CORP

Semiconductor device, method for manufacturing the same, and multilayer substrate having the same

A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit.
Owner:DENSO CORP

Voltage converting circuit and battery device

A voltage converting circuit and a battery device, aimed at the problem that the breakdown voltage required for the driving input of the selected switch element is increased as the potential of the selected power storage device is increased when a power storage device is selected from a plurality of power storage devices that are connected in series. A certain drive voltage for turning on p-type MOS transistors Q3, Q4 of selection circuit 121 is generated based on a certain drive current Ion flowing from one power storage element to ground level GND. In other words, even if the power storage device selected by selection circuit 121 has a high potential with respect to ground level GND, the drive voltage applied between the gate and source of MOS transistors Q3, Q4 can be held substantially constant.
Owner:TEXAS INSTR INC
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