8 results about "Channel-stopper" patented technology

To provide a semiconductor device with improved HBT withstand capability. [Solution] The semiconductor device comprises a silicon carbide substrate, a field oxide film, an insulating film, and a wiring layer. The silicon carbide substrate has a first main surface and a second main surface which is the opposite surface of the first main surface. In a plan view, the second main surface has a cell region and an outer peripheral region located between the cell region and the outer peripheral edge of the second main surface. Within the silicon carbide substrate, the silicon carbide substrate has a termination structure and a channel stopper formed on the second main surface located in the outer peripheral region. In a plan view, the channel stopper is located outside the termination structure. The conductivity type of the silicon carbide substrate and the conductivity type of the channel stopper is a first conductivity type. The termination structure has a second conductivity type opposite to the first conductivity type. The field oxide film is formed on the second main surface located in the outer peripheral region such that it overlaps the termination structure in a plan view and at least partially overlaps the channel stopper in a plan view.

A semiconductor device (100) comprises a silicon carbide substrate (10), a field oxide film (20), an insulating film (50), and a wiring layer (60). The silicon carbide substrate comprises a first main surface (10a) and a second main surface (10b), which is opposite the first main surface. The second main surface comprises a cell region (10ba) and an outer peripheral region (10bb) located, in plan view, between the cell region and an outer peripheral edge of the second main surface. The silicon carbide substrate includes a termination structure (18) and a channel stopper (19) formed in the second main surface located in the outer peripheral region. The channel stopper is located outside the termination structure in plan view.One conductivity type of the silicon carbide substrate and one conductivity type of the channel stopper each constitute a first conductivity type. The termination structure exhibits a second conductivity type opposite to the first. The field oxide film is formed on the second main surface located in the outer peripheral region such that it overlaps the termination structure in plan view and at least partially overlaps the channel stopper in plan view.

To improve the degree of freedom in controlling the depletion layer. [Solution] The semiconductor device comprises a channel stopper region of a first conductivity type formed on the surface of the drift layer in the termination region, a first termination trench formed in the drift layer in the termination region, a plurality of termination electrodes provided within the first termination trench surrounded by a first termination insulating film, and a channel stopper electrode provided on the upper surface of the drift layer in an electrically connected state to the channel stopper region and the termination electrodes, wherein the plurality of termination electrodes include a first termination electrode and a second termination electrode.

To provide an inexpensive semiconductor device with improved moisture resistance. [Solution] The front surface of the semiconductor substrate 40 has an outer peripheral step 25 on the channel stopper region 32 at the outer periphery of the semiconductor substrate 40, where the fourth surface 40d, which includes the scribe region 3 at the outer periphery of the semiconductor substrate 40, is recessed from the fourth surface 40d toward the chip center. The insulating layer 33 is provided with a constant thickness over the entire surface of the front surface of the semiconductor substrate 40 in the edge termination region 2. The surface protective film 34 covers the outer peripheral step 25 of the front surface of the semiconductor substrate 40 via the insulating layer 33. The upper surface of the surface protective film 34 has a fifth upper surface 34e that slopes more gently and has a smaller inclination angle than the outer peripheral step 25 on the portion of the outer peripheral step 25 of the front surface of the semiconductor substrate 40. The surface protective film 34 terminates toward the chip center toward the edge of the semiconductor substrate 40, exposing the scribe region 3, and has a tapered outer end surface 34f on the fourth surface 40d of the front surface of the semiconductor substrate 40.

The present invention improves the degree of freedom of control of a depletion layer. The semiconductor device includes: a first conductivity-type channel cutoff region formed on a surface layer of a terminal region of a drift layer; a first terminal trench formed at the terminal region of the drift layer; a plurality of terminal electrodes provided within the first terminal trench in a state of being surrounded by a first terminal insulating film; and a channel cutoff electrode provided on the drift layer in a state of being electrically connected to the channel cutoff region and the terminal electrodes, the plurality of terminal electrodes including a first terminal electrode and a second terminal electrode.

A semiconductor device of the present application includes a silicon carbide substrate, a field oxide film, an insulating film, and a wiring layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The second main surface has a cell region and a peripheral region between the cell region and a peripheral edge of the second main surface when viewed in plan. The silicon carbide substrate has a termination structure and a channel stopper ring formed in the second main surface in the peripheral region. The channel stopper ring is located outward of the termination structure when viewed in plan. The silicon carbide substrate and the channel stopper ring have a first conductivity type. The termination structure has a second conductivity type opposite to the first conductivity type. The field oxide film is formed on the second main surface in the peripheral region so as to overlap the termination structure when viewed in plan and at least partially overlap the channel stopper ring when viewed in plan.

A semiconductor device includes: a channel stopper region of a first conductivity type formed on a surface layer of a drift layer in a termination region; a first termination trench formed in the drift layer in the termination region; a plurality of termination electrodes provided in the first termination trench while being surrounded by a first termination insulating film; and a channel stopper electrode provided on an upper surface of the drift layer while being electrically connected to the channel stopper region and the termination electrodes, wherein the plurality of termination electrodes include a first termination electrode and a second termination electrode.

A semiconductor device includes a silicon carbide substrate, a field oxide film, an insulation film, and a wiring layer. The silicon carbide substrate includes a first main surface, and a second main surface being an opposite surface of the first main surface. The second main surface includes a cell region, and an outer peripheral region located between the cell region and an outer peripheral edge of the second main surface in plan view. The silicon carbide substrate includes a termination structure and a channel stopper that are formed in the second main surface located in the outer peripheral region in the silicon carbide substrate. The channel stopper is located outside the termination structure in plan view. A conductivity type of the silicon carbide substrate and a conductivity type of the channel stopper are each a first conductivity type.