2results about How to "Stable breakdown voltage" patented technology

The invention relates to a semiconductor device. A field plate electrode FP and a gate electrode GE are formed in the plurality of trenches TR1. The peripheral trench TR2 surrounds the plurality of trenches TR1 in a plan view. A field plate electrode FP (lead-out portion FPa) is formed in the peripheral trench TR2. The peripheral trench TR2 has an extension portion TR2a extending in the Y direction, an extension portion TR2b extending in the X direction, and a corner portion TR2c extending in a direction different from the X and Y directions in a plan view and connecting the extension portion TR2a and the extension portion TR2b. In the Y direction, the distance L2 between the extension TR2b and the end 10 of the trench TR1 closest to the extension TR2a is longer than the distance L3 between the extension TR2b and the end 10 of the other trench TR1.

The utility model provides a kind of power adapter overvoltage protection structure, by drive slot drive insulated screw rod rotation, the process of rotation of insulated screw rod is driven by rotating plate, insulated connecting rod mobile electrode downward movement, and close to fixed electrode movement. The process of mobile electrode downward movement, the sliding rod set on the electricity receiving support plate on mobile electrode is inserted in sliding groove and moves along sliding groove. The distance between mobile electrode and fixed electrode is adjusted to control the breakdown voltage of adaptation. Nut is sleeved on wedge washer group insulated screw rod, so that nut is abutted with the bottom of accommodating groove by wedge washer group. So as to lock and fix insulated screw rod, so as to lock the distance between mobile electrode and fixed electrode, to lock the breakdown voltage of adaptation. When the voltage of power adapter is greater than breakdown voltage, mobile electrode and fixed electrode are electrified, so as to transmit the signal that the voltage of power adapter is greater than breakdown voltage.