Semiconductor device having edge cell of internal pressure stabilization structure

Abstract

According to an embodiment of the present invention, in a power semiconductor device comprising an active battery and an edge cell formed adjacent to the active battery for stabilizing the electric field,the active battery comprising: an N + substrate formed on an upper side of the second electrode; an N-drift layer formed on the upper side of the N + substrate; a P-base region formed on an upper portion of the N-drift layer; and a first electrode formed on an upper side of the P-base region for receiving a signal; the edge battery comprising: a field plate extending from the first electrode as a conductor; a buffer ring formed underneath the field plate by injecting the first impurity ions above the N-Drift layer extending from the active battery; a plurality of field loops having a predetermined horizontal gap and width from the buffer ring formed by injecting the first impurity ions over the N-drift layer; and a field effect oxide film formed between the field plate and the buffer ring and covering a plurality of field loops.

Description

technical field [0001] The present invention relates to a power semiconductor device, and more particularly, to an edge cell technology having a stable voltage-resistant structure in a semiconductor device that withstands a high voltage of 1,700V. Background technique [0002] Power semiconductor devices are used to convert or control power. [0003] Most power semiconductor devices withstand higher voltages and have higher currents and higher frequencies than typical semiconductor devices. Generally, power semiconductor devices included in power devices and used for power semiconductors are rectifier diodes, power MOSFETs, insulated gate bipolar transistors (IGBTs), thyristors (thyristors), gate turn-off (GTO) thyristors, and bidirectional SCR (triac). [0004] Among the many characteristics of power semiconductor devices, it is important to maintain a high breakdown voltage. [0005] When the concentration of the drift (drift) region in the power semiconductor device de...

AI Technical Summary

Problems solved by technology

[0011] As the operating voltage of power semiconductor devices becomes progressively higher, the physical size of the electric field mitigation structures used to extend the longitudinal boundary of the active cell also increases at higher operating voltages, which may lead to an increase in the size of the semiconductor chip

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