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Power device having interface charge trench high-voltage interconnection structure

A technology of interface charge and interconnection structure, applied in the direction of electrical components, semiconductor devices, circuits, etc., to achieve the effect of stabilizing the breakdown voltage

Active Publication Date: 2018-06-29
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure mainly improves the longitudinal withstand voltage of conventional structures, and is not suitable for high-voltage interconnection structures

Method used

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  • Power device having interface charge trench high-voltage interconnection structure
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  • Power device having interface charge trench high-voltage interconnection structure

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Embodiment 1

[0037] Such as image 3 The shown power device with an interface charge slot high-voltage interconnection structure includes a drift region 300, a buried layer 200, and a substrate 100 arranged in sequence from top to bottom; the drift region 300 is provided with N + Drain region, drain electrode 700, gate electrode, source electrode, N + Contact area, p-well and P + source region; the outer surface of one side of the drift region 300 is provided with a vertical gate; the vertical gate is a vertical groove gate formed by polysilicon 401 and a vertical oxide layer 402; the groove gate extends to the buried layer 200; The trench gate and the p-well form a vertical conductive channel; the drift region 300 is provided with a horizontal P-type buried layer 301 connected to the vertical gate;

[0038] A buried layer 2 500 is disposed above the drift region 300, and a surface structure 600 is disposed above the buried layer 500; a vertical dielectric trench 201 extending into the d...

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Abstract

The present invention discloses a power device having an interface charge trench high-voltage interconnection structure capable of generating interface charges, enhancing a surface transverse electricfield and improving a surface horizontal withstand voltage. The power device comprises a drift region, a buried layer 1 and a substrate which are arranged from top to bottom in order; a buried layer2 is arranged above the drift region, and a surface structure is arranged above the buried layer 2; and the buried layer 2 is provided with medium grooves 2 extending into the drift region, and the medium grooves 2 are uniformly distributed in a transverse direction. The breakdown voltage of the power device provided by the invention can reach 427V, a traditional groove-gate structure breakdown voltage is 258V, and the breakdown voltage is increased by 65.5%. The power device is uniform in equipotential line distribution, a charge shielding effect allows the surface high voltage to reduce theeffect on the drift region, and therefore, the concentration of the drift region is greatly improved, the resistance is reduced, and the breakdown voltage is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a power device with an interface charge slot high-voltage interconnection structure. Background technique [0002] Well-known: Power Integrated Circuit (Power Integrated Circuit), which integrates signal processing, sensing protection, and power transmission technology, has developed rapidly since it was produced in the 1980s. And other high-tech industries have a very wide range of applications. PIC is an important branch of integrated circuits. Compared with discrete devices, PIC not only has great advantages in performance, power consumption and stability, but also has great significance in reducing cost, volume and weight. Therefore, domestic and foreign experts and scholars have invested great attention and in-depth research on it. [0003] Power semiconductor devices mainly include power diodes, thyristors, power MOSFETs, power insulated gate bipolar t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739H01L29/78
CPCH01L29/0611H01L29/7393H01L29/78
Inventor 李琦张昭阳李海鸥陈永和张法碧傅涛袁雷雷
Owner GUILIN UNIV OF ELECTRONIC TECH
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